Items : %s%s
Single IGBTs
Additional Feature
- AVALANCHE RATED
- HIGH RELIABILITY, LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS, AVALANCHE RATED
- LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
- LOW SATURATION VOLTAGE
- UL RECOGNIZED, HIGH RELIABILITY
- ULTRA FAST
- ULTRA FAST SOFT RECOVERY
- ULTRA FAST SWITCHING
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 10 Weeks
- 11 Weeks
- 12 Weeks
- 13 Weeks
- 14 Weeks
- 15 Weeks
- 16 Weeks
- 18 Weeks
- 20 Weeks
- 21 Weeks
- 22 Weeks
- 23 Weeks
- 24 Weeks
- 25 Weeks
- 26 Weeks
- 30 Weeks
- 33 Weeks
- 36 Weeks
- 38 Weeks
- 4 Weeks
- 44 Weeks
- 5 Weeks
- 50 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
- 9 Weeks
- 99 Weeks
JESD-609 Code
- e1
- e3
Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- ACTIVE (Last Updated: 1 week ago)
- ACTIVE (Last Updated: 11 hours ago)
- ACTIVE (Last Updated: 12 hours ago)
- ACTIVE (Last Updated: 13 hours ago)
- ACTIVE (Last Updated: 15 hours ago)
- ACTIVE (Last Updated: 2 days ago)
- ACTIVE (Last Updated: 3 days ago)
- ACTIVE (Last Updated: 4 days ago)
- ACTIVE (Last Updated: 5 days ago)
- ACTIVE (Last Updated: 6 days ago)
- ACTIVE (Last Updated: 7 months ago)
- ACTIVE (Last Updated: 8 hours ago)
- ACTIVE, NOT REC (Last Updated: 1 day ago)
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- ACTIVE, NOT REC (Last Updated: 10 hours ago)
- ACTIVE, NOT REC (Last Updated: 12 hours ago)
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- ACTIVE, NOT REC (Last Updated: 2 weeks ago)
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- ACTIVE, NOT REC (Last Updated: 5 days ago)
- ACTIVE, NOT REC (Last Updated: 6 days ago)
- LAST SHIPMENTS (Last Updated: 2 days ago)
- LAST SHIPMENTS (Last Updated: 4 days ago)
Manufacturer Package Identifier
- D2PAK-3 CASE 418AJ ISSUE B
Max Operating Temperature
- 150°C
- 175°C
Min Operating Temperature
- -55°C
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Surface Mount
- Surface Mount, Through Hole
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 2
- 247
- 3
- 4
- 6
Number of Terminations
- 2
- 3
- 6
Operating Temperature
- -40°C~150°C TJ
- -40°C~175°C TJ
- -55°C~150°C TJ
- -55°C~175°C TJ
Package / Case
- i4-Pac™-5 (3 Leads)
- TO-220-3
- TO-220-3 Full Pack
- TO-247-3
- TO-247-3 Variant
- TO-247-4
- TO-252-3, DPak (2 Leads + Tab), SC-63
- TO-262-3 Long Leads, I2Pak, TO-262AA
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- TO-264-3, TO-264AA
- TO-274AA
- TO-3P-3 Full Pack
- TO-3P-3, SC-65-3
Packaging
- Bulk
- Cut Tape (CT)
- Tape & Reel (TR)
- Tube
Part Status
- Active
- Last Time Buy
- Not For New Designs
- Obsolete
Pbfree Code
- no
- yes
Published
- 1997
- 1998
- 1999
- 2000
- 2001
- 2002
- 2003
- 2004
- 2005
- 2006
- 2007
- 2008
- 2009
- 2010
- 2011
- 2012
- 2013
- 2014
- 2015
- 2016
- 2017
Series
- Automotive, AEC-Q101
- Automotive, AEC-Q101, EcoSPARK®
- BIMOSFET™
- EcoSPARK®
- GenX3™
- PowerMESH™
- TrenchStop®
- TrenchStop™
Supplier Device Package
- TO-220AB
- TO-247AC
Surface Mount
- NO
Terminal Finish
- MATTE TIN
- Matte Tin (Sn)
- Matte Tin (Sn) - with Nickel (Ni) barrier
- MATTE TIN OVER NICKEL
- TIN
- Tin (Sn)
- TIN SILVER COPPER
- Tin/Silver/Copper (Sn/Ag/Cu)
Termination
- SMD/SMT
- Through Hole
Transistor Element Material
- SILICON
Weight
- 1.31247g
- 1.312g
- 1.8g
- 2.084g
- 2.240009g
- 2.27g
- 2.299997g
- 260.37mg
- 260.39037mg
- 2g
- 350.003213mg
- 38.000013g
- 6.000006g
- 6.289g
- 6.39g
- 6.401g
- 6.500007g
- 6.756g
- 6.962g
- 7.629g
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | JEDEC-95 Code | Polarity | Case Connection | Halogen Free | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Max Dual Supply Voltage | Max Breakdown Voltage | Supplier Device Package | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Rise Time-Max | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Rise Time | Drain to Source Voltage (Vdss) | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Continuous Collector Current | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STGB20NB41LZT4 | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | ACTIVE (Last Updated: 7 months ago) | Surface Mount | Tape & Reel (TR) | PowerMESH™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | 20A | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | Surface Mount | -55°C~175°C TJ | 20V | Standard | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | 30 | STGB20 | 3 | R-PSSO-G2 | Insulated Gate BIP Transistors | 200W | 1 | COLLECTOR | N-CHANNEL | Single | 200W | 1 μs | 442V | 40A | 442V | 382V | AUTOMOTIVE IGNITION | 12.1 μs | SILICON | 220ns | 2V | 1220 ns | 2V @ 4.5V, 20A | 16100 ns | 2.4V | 320V, 20A, 1k Ω, 5V | 46nC | 80A | 1μs/12.1μs | 5mJ (on), 12.9mJ (off) | |||||||||||||||||||||||||||||
 |
FGB40N6S2 | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | yes | Obsolete | 1 (Unlimited) | 2 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | unknown | Surface Mount | -55°C~150°C TJ | Standard | NOT SPECIFIED | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | YES | R-PSSO-G2 | COMMERCIAL | 290W | 1 | SINGLE | COLLECTOR | N-CHANNEL | POWER CONTROL | SILICON | 32 ns | 2.7V @ 15V, 20A | 153 ns | 600V | 75A | 390V, 20A, 3 Ω, 15V | 35nC | 180A | 8ns/35ns | 115μJ (on), 195μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
 |
IXYH40N90C3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Through Hole | Tube | 2013 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | Insulated Gate BIP Transistors | 600W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 600W | 105A | 900V | 900V | POWER CONTROL | SILICON | 2.2V | 81 ns | 2.5V @ 15V, 40A | 237 ns | 20V | 5.5V | 450V, 40A, 5 Ω, 15V | 74nC | 200A | 27ns/78ns | 1.9mJ (on), 1mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
 |
STGW80V60F | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | ACTIVE (Last Updated: 8 months ago) | Through Hole | Tube | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 3 | TO-247-3 | Through Hole | 38.000013g | -55°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | STGW80 | 469W | 469W | Single | 120A | 600V | 600V | 1.85V | 2.3V @ 15V, 80A | Trench Field Stop | 400V, 80A, 10 Ω, 15V | 448nC | 240A | 60ns/220ns | 1.8mJ (on), 1mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IGC36T120T8LX1SA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Bulk | 2015 | TrenchStop™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | Die | Surface Mount | -40°C~175°C TJ | Standard | UPPER | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | YES | R-XUUC-N3 | 1 | SINGLE | Halogen Free | N-CHANNEL | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 1.2kV | 2.07V @ 15V, 35A | Trench Field Stop | 1200V | 105A | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
APT30GN60BG | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 24 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 63A | No | TO-247-3 | Through Hole | -55°C~175°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | 203W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 63A | 600V | 600V | POWER CONTROL | SILICON | 26 ns | 1.9V @ 15V, 30A | 255 ns | Trench Field Stop | 400V, 30A, 4.3 Ω, 15V | 165nC | 90A | 12ns/155ns | 525μJ (on), 700μJ (off) | |||||||||||||||||||||||||||||||||||||||||
|
RJP65T54DPM-E0#T2 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Obsolete | 1 (Unlimited) | TO-3PFM, SC-93-3 | compliant | Through Hole | 175°C TJ | Standard | 63.5W | 1.68V @ 15V, 30A | Trench | 650V | 60A | 400V, 30A, 10 Ω, 15V | 72nC | 225A | 35ns/120ns | 330μJ (on), 760μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RJH1CV5DPK-00#T0 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2013 | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-3P-3, SC-65-3 | Through Hole | 150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 4 | Insulated Gate BIP Transistors | 245W | 245W | N-CHANNEL | Single | 170 ns | 50A | 1.2kV | 2.6V | 2.6V @ 15V, 25A | Trench | 1200V | 600V, 25A, 5 Ω, 15V | 72nC | 42ns/105ns | 1.9mJ (on), 1.5mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
IRG4RC10SDTRRP | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 17 Weeks | Surface Mount | Tape & Reel (TR) | 1999 | Obsolete | 1 (Unlimited) | 2 | EAR99 | RoHS Compliant | No | 3 | LOW CONDUCTION LOSS | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | IRG4RC10SDPBF | R-PSSO-G2 | Insulated Gate BIP Transistors | 38W | 1 | TO-252AA | COLLECTOR | N-CHANNEL | Single | 38W | 28 ns | 14A | 600V | 1.8V | POWER CONTROL | SILICON | 1.7V | 106 ns | 1.8V @ 15V, 8A | 1780 ns | 20V | 6V | 1080ns | 480V, 8A, 100 Ω, 15V | 15nC | 18A | 76ns/815ns | 310μJ (on), 3.28mJ (off) | ||||||||||||||||||||||||||||||||||
 |
IRGP6650D-EPBF | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | 306W | TO-247AD | 50ns | 1.95V @ 15V, 35A | 600V | 80A | 400V, 35A, 10Ohm, 15V | 75nC | 105A | 40ns/105ns | 300μJ (on), 630μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RGT8NS65DGTL | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 17 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | not_compliant | Surface Mount | 1.946308g | -40°C~175°C TJ | Standard | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 65W | 65W | 1 | COLLECTOR | N-CHANNEL | Single | 650V | 40 ns | 8A | 650V | 650V | POWER CONTROL | SILICON | 1.65V | 54 ns | 2.1V @ 15V, 4A | 158 ns | Trench Field Stop | 4A | 400V, 4A, 50 Ω, 15V | 13.5nC | 12A | 17ns/69ns | ||||||||||||||||||||||||||||||||||||||||
 |
IXGX400N30A3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 24 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | IXG*400N30 | 3 | Insulated Gate BIP Transistors | Not Qualified | 1kW | 1000W | 1 | SINGLE | COLLECTOR | N-CHANNEL | 400A | 300V | 1.15V | POWER CONTROL | SILICON | 100 ns | 1.15V @ 15V, 100A | 555 ns | PT | 20V | 5V | 560nC | 1200A | |||||||||||||||||||||||||||||||||||||||
 |
NGTB40N120LWG | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | LAST SHIPMENTS (Last Updated: 5 days ago) | Tube | 2006 | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | 16.26mm | RoHS Compliant | Lead Free | 3 | TO-247-3 | No SVHC | 21.08mm | 5.3mm | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | Insulated Gate BIP Transistors | 260W | 260W | 1 | COLLECTOR | Halogen Free | N-CHANNEL | Single | 80A | 1.2kV | 1.2kV | MOTOR CONTROL | SILICON | 1.9V | 178 ns | 2.35V @ 15V, 40A | 565 ns | Trench Field Stop | 20V | 1200V | 6.5V | 600V, 40A, 10 Ω, 15V | 420nC | 320A | 140ns/360ns | 5.5mJ (on), 1.4mJ (off) | |||||||||||||||||||||||||||||||
|
FGH30T65UPDT-F155 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | ACTIVE, NOT REC (Last Updated: 4 days ago) | Through Hole | Tube | 2016 | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-247-3 | not_compliant | Through Hole | 6.39g | -55°C~175°C TJ | Standard | e3 | TIN | 260 | NOT SPECIFIED | Insulated Gate BIP Transistors | 250W | 250W | 1 | TO-247AB | COLLECTOR | N-CHANNEL | Single | 43 ns | 60A | 650V | 650V | POWER CONTROL | SILICON | 2.1V | 52 ns | 2.3V @ 15V, 30A | 170 ns | Trench Field Stop | 20V | 7.5V | 400V, 30A, 8 Ω, 15V | 155nC | 90A | 22ns/139ns | 760μJ (on), 400μJ (off) | ||||||||||||||||||||||||||||||||||||
 |
RJH60F4DPQ-A0#T0 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2007 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | 3 | TO-247-3 | Through Hole | 150°C TJ | Standard | RJH60F | 3 | Insulated Gate BIP Transistors | 235.8W | 235.8W | 1 | COLLECTOR | N-CHANNEL | Single | 90 ns | 60A | 600V | 600V | POWER CONTROL | SILICON | 1.7V | 195 ns | 1.82V @ 15V, 30A | 165 ns | Trench | 8V | 400V, 30A, 5 Ω, 15V | 45ns/85ns | |||||||||||||||||||||||||||||||||||||||||||||
|
RJH60F0DPQ-A0#T0 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2007 | yes | Active | 1 (Unlimited) | ROHS3 Compliant | 3 | TO-247-3 | No SVHC | Through Hole | 150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | RJH60F | 3 | 201.6W | 201.6W | 90 ns | 50A | 600V | 1.82V | 1.7V | 1.82V @ 15V, 25A | Trench | 400V, 30A, 5 Ω, 15V | 46ns/70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
RJH60F0DPK-00#T0 | Renesas Electronics America | 24.1403 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-3P-3, SC-65-3 | Through Hole | 150°C TJ | Standard | SINGLE | RJH60F | 2 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 201.6W | 201.6W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 140 ns | 50A | 600V | 1.82V | POWER CONTROL | SILICON | 1.82V @ 15V, 25A | Trench | 30V | 8V | 400V, 30A, 5 Ω, 15V | 46ns/70ns | ||||||||||||||||||||||||||||||||||||||||||||||
|
NGTB15N120IHWG | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 29 Weeks | LAST SHIPMENTS (Last Updated: 3 days ago) | Through Hole | Tube | 2004 | yes | Obsolete | 1 (Unlimited) | 3 | 16.25mm | RoHS Compliant | Lead Free | 3 | TO-247-3 | No SVHC | 21.4mm | 5.3mm | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 278W | 278W | 1 | N-CHANNEL | Single | 30A | 1.2kV | 2.45V | POWER CONTROL | SILICON | 2.1V | 2.45V @ 15V, 15A | 385 ns | Trench Field Stop | 1200V | 600V, 15A, 10 Ω, 15V | 120nC | 60A | -/130ns | 360μJ (off) | |||||||||||||||||||||||||||||||||||||||
|
RJH1CV6DPK-00#T0 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2013 | yes | Last Time Buy | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 3 | TO-3P-3, SC-65-3 | Through Hole | 150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 4 | Insulated Gate BIP Transistors | 290W | 290W | N-CHANNEL | Single | 180 ns | 60A | 1.2kV | 2.6V | 2.6V @ 15V, 30A | Trench | 1200V | 600V, 30A, 5 Ω, 15V | 105nC | 46ns/125ns | 2.3mJ (on), 1.7mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RJH60F7DPQ-A0#T0 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2011 | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | 150°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | RJH60F | 3 | 328.9W | 328.9W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 90 ns | 90A | 600V | 1.75V | POWER CONTROL | SILICON | 1.6V | 144 ns | 1.75V @ 15V, 50A | 216 ns | Trench | 400V, 30A, 5 Ω, 15V | 63ns/142ns | ||||||||||||||||||||||||||||||||||||||||||||
|
FGB20N60SFD-F085 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101 | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | 1.31247g | -55°C~150°C TJ | Standard | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | FGB20N60 | R-PSSO-G2 | Insulated Gate BIP Transistors | 208W | 208W | 1 | COLLECTOR | N-CHANNEL | Single | 600V | 111 ns | 40A | 600V | 600V | 21ns | POWER CONTROL | SILICON | 2.4V | 28 ns | 2.85V @ 15V, 20A | 123 ns | Field Stop | 20V | 6.5V | 400V, 20A, 10 Ω, 15V | 63nC | 60A | 10ns/90ns | 310μJ (on), 130μJ (off) | ||||||||||||||||||||||||||||||||
|
APT75GN60BG | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 24 Weeks | Through Hole | Tube | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 155A | No | HIGH RELIABILITY | TO-247-3 | Through Hole | -55°C~175°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 536W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 47 ns | 155A | 600V | 600V | POWER CONTROL | 385 ns | SILICON | 95 ns | 1.85V @ 15V, 75A | 485 ns | Trench Field Stop | 30V | 6.5V | 400V, 75A, 1 Ω, 15V | 485nC | 225A | 47ns/385ns | 2500μJ (on), 2140μJ (off) | ||||||||||||||||||||||||||||||||||||
 |
APT25GR120S | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 19 Weeks | Surface Mount | Bulk | 2001 | Active | 1 (Unlimited) | EAR99 | RoHS Compliant | Lead Free | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Surface Mount | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 521W | 521W | N-CHANNEL | 75A | 1.2kV | 3.2V | 3.2V @ 15V, 25A | NPT | 30V | 1200V | 6.5V | 600V, 25A, 4.3 Ω, 15V | 203nC | 100A | 16ns/122ns | 742μJ (on), 427μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IXYP30N65C3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 24 Weeks | GenX3™, XPT™ | Active | TO-220-3 | compliant | Through Hole | -55°C~175°C TJ | Standard | 270W | 42ns | 2.7V @ 15V, 30A | PT | 650V | 60A | 400V, 30A, 10 Ω, 15V | 44nC | 118A | 21ns/75ns | 1mJ (on), 270μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IXGH24N170A | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 30 Weeks | Through Hole | Tube | 2004 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXG*24N170 | 3 | Insulated Gate BIP Transistors | Not Qualified | 250W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 250W | 24A | 1.7kV | 1.7kV | POWER CONTROL | SILICON | 4.5V | 98 ns | 6V @ 15V, 16A | 275 ns | NPT | 20V | 1700V | 5V | 80ns | 850V, 24A, 10 Ω, 15V | 140nC | 75A | 21ns/336ns | 2.97mJ (on), 790μJ (off) | ||||||||||||||||||||||||||||||||||
 |
STGP10H60DF | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | ACTIVE (Last Updated: 7 months ago) | Through Hole | Tube | Active | 1 (Unlimited) | EAR99 | 10.4mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | 15.75mm | 4.6mm | Through Hole | 6.000006g | -55°C~175°C TJ | Standard | STGP10 | 115W | 115W | Single | 107 ns | 20A | 600V | 600V | 1.5V | 1.95V @ 15V, 10A | Trench Field Stop | 400V, 10A, 10 Ω, 15V | 57nC | 40A | 19.5ns/103ns | 83μJ (on), 140μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
|
STGWT40V60DF | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 32 Weeks | Through Hole | Tube | Active | 1 (Unlimited) | EAR99 | 15.7mm | ROHS3 Compliant | Lead Free | No | 3 | TO-3P-3, SC-65-3 | 26.7mm | 5.7mm | Through Hole | -55°C~175°C TJ | Standard | STGWT40 | 283W | Single | 283W | 41 ns | 80A | 600V | 600V | 2.35V | 2.3V @ 15V, 40A | Trench Field Stop | 400V, 40A, 10 Ω, 15V | 226nC | 160A | 52ns/208ns | 456μJ (on), 411μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
|
IRG4CC80SB | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Last Time Buy | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | -55°C~150°C | Standard | Die | 600V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXGR120N60C2 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2005 | HiPerFAST™, Lightspeed 2™ | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | No | 247 | ISOPLUS247™ | No SVHC | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | IXG*120N60 | 3 | R-PSFM-T3 | 300W | 1 | NPN | ISOLATED | Single | 300W | 75A | 600V | 600V | POWER CONTROL | SILICON | 45ns | 2.7V | 100 ns | 2.7V @ 15V, 100A | 257 ns | PT | 400V, 80A, 1 Ω, 15V | 370nC | 500A | 40ns/120ns | 1.7mJ (on), 1mJ (off) | |||||||||||||||||||||||||||||||||||||||
 |
IRGP4063D1PBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2013 | Obsolete | 1 (Unlimited) | EAR99 | 15.87mm | RoHS Compliant | Lead Free | No | 3 | TO-247-3 | 20.7mm | 5.31mm | Through Hole | 38.000013g | -40°C~175°C TJ | Standard | IRGP4063D | Insulated Gate BIP Transistors | 330W | 330W | N-CHANNEL | Single | 80 ns | 100A | 600V | 2.14V | 2.05V | 2.14V @ 15V, 48A | 20V | 6.5V | 400V, 48A, 10 Ω, 15V | 150nC | 192A | 60ns/160ns | 1.4mJ (on), 1.1mJ (off) |
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