Items : %s%s
Single IGBTs
Additional Feature
- AVALANCHE RATED
- HIGH RELIABILITY, LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS, AVALANCHE RATED
- LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
- LOW SATURATION VOLTAGE
- UL RECOGNIZED, HIGH RELIABILITY
- ULTRA FAST
- ULTRA FAST SOFT RECOVERY
- ULTRA FAST SWITCHING
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 10 Weeks
- 11 Weeks
- 12 Weeks
- 13 Weeks
- 14 Weeks
- 15 Weeks
- 16 Weeks
- 18 Weeks
- 20 Weeks
- 21 Weeks
- 22 Weeks
- 23 Weeks
- 24 Weeks
- 25 Weeks
- 26 Weeks
- 30 Weeks
- 33 Weeks
- 36 Weeks
- 38 Weeks
- 4 Weeks
- 44 Weeks
- 5 Weeks
- 50 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
- 9 Weeks
- 99 Weeks
JESD-609 Code
- e1
- e3
Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- ACTIVE (Last Updated: 1 week ago)
- ACTIVE (Last Updated: 11 hours ago)
- ACTIVE (Last Updated: 12 hours ago)
- ACTIVE (Last Updated: 13 hours ago)
- ACTIVE (Last Updated: 15 hours ago)
- ACTIVE (Last Updated: 2 days ago)
- ACTIVE (Last Updated: 3 days ago)
- ACTIVE (Last Updated: 4 days ago)
- ACTIVE (Last Updated: 5 days ago)
- ACTIVE (Last Updated: 6 days ago)
- ACTIVE (Last Updated: 7 months ago)
- ACTIVE (Last Updated: 8 hours ago)
- ACTIVE, NOT REC (Last Updated: 1 day ago)
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- ACTIVE, NOT REC (Last Updated: 10 hours ago)
- ACTIVE, NOT REC (Last Updated: 12 hours ago)
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- ACTIVE, NOT REC (Last Updated: 2 weeks ago)
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- ACTIVE, NOT REC (Last Updated: 5 days ago)
- ACTIVE, NOT REC (Last Updated: 6 days ago)
- LAST SHIPMENTS (Last Updated: 2 days ago)
- LAST SHIPMENTS (Last Updated: 4 days ago)
Manufacturer Package Identifier
- D2PAK-3 CASE 418AJ ISSUE B
Max Operating Temperature
- 150°C
- 175°C
Min Operating Temperature
- -55°C
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Surface Mount
- Surface Mount, Through Hole
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 2
- 247
- 3
- 4
- 6
Number of Terminations
- 2
- 3
- 6
Operating Temperature
- -40°C~150°C TJ
- -40°C~175°C TJ
- -55°C~150°C TJ
- -55°C~175°C TJ
Package / Case
- i4-Pac™-5 (3 Leads)
- TO-220-3
- TO-220-3 Full Pack
- TO-247-3
- TO-247-3 Variant
- TO-247-4
- TO-252-3, DPak (2 Leads + Tab), SC-63
- TO-262-3 Long Leads, I2Pak, TO-262AA
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- TO-264-3, TO-264AA
- TO-274AA
- TO-3P-3 Full Pack
- TO-3P-3, SC-65-3
Packaging
- Bulk
- Cut Tape (CT)
- Tape & Reel (TR)
- Tube
Part Status
- Active
- Last Time Buy
- Not For New Designs
- Obsolete
Pbfree Code
- no
- yes
Published
- 1997
- 1998
- 1999
- 2000
- 2001
- 2002
- 2003
- 2004
- 2005
- 2006
- 2007
- 2008
- 2009
- 2010
- 2011
- 2012
- 2013
- 2014
- 2015
- 2016
- 2017
Series
- Automotive, AEC-Q101
- Automotive, AEC-Q101, EcoSPARK®
- BIMOSFET™
- EcoSPARK®
- GenX3™
- PowerMESH™
- TrenchStop®
- TrenchStop™
Supplier Device Package
- TO-220AB
- TO-247AC
Surface Mount
- NO
Terminal Finish
- MATTE TIN
- Matte Tin (Sn)
- Matte Tin (Sn) - with Nickel (Ni) barrier
- MATTE TIN OVER NICKEL
- TIN
- Tin (Sn)
- TIN SILVER COPPER
- Tin/Silver/Copper (Sn/Ag/Cu)
Termination
- SMD/SMT
- Through Hole
Transistor Element Material
- SILICON
Weight
- 1.31247g
- 1.312g
- 1.8g
- 2.084g
- 2.240009g
- 2.27g
- 2.299997g
- 260.37mg
- 260.39037mg
- 2g
- 350.003213mg
- 38.000013g
- 6.000006g
- 6.289g
- 6.39g
- 6.401g
- 6.500007g
- 6.756g
- 6.962g
- 7.629g
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | JEDEC-95 Code | Polarity | Case Connection | Halogen Free | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Clamping Voltage | Max Breakdown Voltage | Supplier Device Package | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Rise Time-Max | Continuous Drain Current (ID) | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Rise Time | Drain to Source Voltage (Vdss) | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Continuous Collector Current | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IRG8P75N65UD1PBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Obsolete | Not Applicable | RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RGTH40TS65GC11 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 17 Weeks | Through Hole | Tube | 2014 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | TO-247-3 | Unknown | Through Hole | 38.000013g | -40°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 144W | 144W | 1 | N-CHANNEL | Single | 40A | 650V | 650V | POWER CONTROL | SILICON | 1.6V | 47 ns | 2.1V @ 15V, 20A | 141 ns | Trench Field Stop | 20A | 400V, 20A, 10 Ω, 15V | 40nC | 80A | 22ns/73ns | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
FGB3245G2-F085 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 39 Weeks | ACTIVE (Last Updated: 1 day ago) | Surface Mount | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, EcoSPARK® | yes | Active | 1 (Unlimited) | ROHS3 Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | 1.31247g | -40°C~175°C TJ | Logic | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | Insulated Gate BIP Transistors | 150W | 150W | N-CHANNEL | Single | 450V | 450V | 23A | 450V | 1.2V | 7000ns | 1.64V | 1.25V @ 4V, 6A | 12V | 2.2V | 15000ns | 23nC | 900ns/5.4μs | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
STGW40NC60KD | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | ACTIVE (Last Updated: 8 months ago) | Through Hole | Tube | PowerMESH™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e3 | Tin (Sn) | STGW40 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 250W | 1 | N-CHANNEL | Single | 250W | 46 ns | 45 ns | 70A | 600V | 600V | POWER CONTROL | 164 ns | SILICON | 64 ns | 2.7V @ 15V, 30A | 338 ns | 20V | 6.5V | 480V, 30A, 10 Ω, 15V | 135nC | 220A | 46ns/164ns | 595μJ (on), 716μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
 |
IGP40N65F5XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2008 | TrenchStop® | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Unknown | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | Insulated Gate BIP Transistors | 255W | Halogen Free | N-CHANNEL | Single | 255W | 74A | 650V | 1.6V | 1.6V | 2.1V @ 15V, 40A | 20V | 4.8V | 400V, 20A, 15 Ω, 15V | 95nC | 120A | 19ns/160ns | 360μJ (on), 100μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
RJP60D0DPM-00#T1 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2010 | yes | Active | 1 (Unlimited) | ROHS3 Compliant | TO-3PFM, SC-93-3 | Through Hole | 150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | RJP60D | 3 | 40W | 40W | 45A | 600V | 2.2V | 2.2V @ 15V, 22A | 300V, 22A, 5 Ω, 15V | 45nC | 35ns/90ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IRGP4650D-EPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 26 Weeks | Through Hole | Tube | 2004 | Active | 1 (Unlimited) | EAR99 | 15.87mm | ROHS3 Compliant | No | 3 | TO-247-3 | 20.7mm | 5.31mm | Through Hole | -55°C~175°C TJ | Standard | Insulated Gate BIP Transistors | 268W | 268W | N-CHANNEL | Single | 134W | 120 ns | 76A | 600V | 1.9V | 42ns | 1.9V | 1.9V @ 15V, 35A | 20V | 6.5V | 54ns | 400V, 35A, 10 Ω, 15V | 104nC | 105A | 46ns/105ns | 390μJ (on), 632μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
APT65GP60L2DQ2G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 1999 | POWER MOS 7® | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 198A | No | 3 | LOW CONDUCTION LOSS | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Insulated Gate BIP Transistors | 833W | 1 | COLLECTOR | N-CHANNEL | Single | 198A | 600V | 600V | POWER CONTROL | SILICON | 85 ns | 2.7V @ 15V, 65A | 220 ns | PT | 6V | 400V, 65A, 5 Ω, 15V | 210nC | 250A | 30ns/90ns | 605μJ (on), 895μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
 |
SIGC14T60SNCX1SA2 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Last Time Buy | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | -55°C~150°C TJ | Standard | Die | 2.5V @ 15V, 15A | NPT | 600V | 15A | 400V, 15A, 21Ohm, 15V | 45A | 31ns/261ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SIGC81T60SNCX7SA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Last Time Buy | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | -55°C~150°C TJ | Standard | Die | 2.5V @ 15V, 100A | NPT | 600V | 100A | 400V, 100A, 3.3Ohm, 15V | 300A | 65ns/450ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
RGTH00TS65GC11 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 17 Weeks | Through Hole | Tube | 2014 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | TO-247-3 | Unknown | Through Hole | 38.000013g | -40°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 277W | 277W | 1 | N-CHANNEL | Single | 85A | 650V | 650V | POWER CONTROL | SILICON | 1.6V | 102 ns | 2.1V @ 15V, 50A | 221 ns | Trench Field Stop | 50A | 400V, 50A, 10 Ω, 15V | 94nC | 200A | 39ns/143ns | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
HGTG20N60B3D | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | ACTIVE, NOT REC (Last Updated: 2 days ago) | Through Hole | Tube | 2011 | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 20A | No | 3 | LOW CONDUCTION LOSS | TO-247-3 | No SVHC | Through Hole | 6.39g | -40°C~150°C TJ | 600V | Standard | 8541.29.00.95 | e3 | Tin (Sn) | HGTG20N60 | 165W | 1 | NPN | COLLECTOR | Single | 165W | 25 ns | 600V | 55ns | 40A | 600V | 600V | MOTOR CONTROL | 220 ns | SILICON | 20ns | 1.8V | 45 ns | 2V @ 15V, 20A | 360 ns | 80nC | 160A | 475μJ (on), 1.05mJ (off) | ||||||||||||||||||||||||||||||||||||||
|
RGT80TS65DGC11 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 17 Weeks | Through Hole | Tube | 2014 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | TO-247-3 | Unknown | Through Hole | 38.000013g | -40°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 234W | 234W | 1 | N-CHANNEL | Single | 58 ns | 70A | 650V | 650V | POWER CONTROL | SILICON | 1.65V | 90 ns | 2.1V @ 15V, 40A | 206 ns | Trench Field Stop | 40A | 400V, 40A, 10 Ω, 15V | 79nC | 120A | 34ns/119ns | |||||||||||||||||||||||||||||||||||||||||||||||
|
IRGP4690DPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2007 | Obsolete | 1 (Unlimited) | EAR99 | 15.87mm | RoHS Compliant | 3 | TO-247-3 | No SVHC | 20.7mm | 5.31mm | Through Hole | -55°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 454W | 454W | Single | 155 ns | 140A | 600V | 2.1V | 1.7V | 2.1V @ 15V, 75A | 400V, 75A, 10 Ω, 15V | 150nC | 225A | 50ns/200ns | 2.47mJ (on), 2.16mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXST40N60B2D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Bulk | 2005 | Obsolete | 1 (Unlimited) | RoHS Compliant | Lead Free | 48A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Surface Mount | 600V | Standard | IXS*40N60 | 48A | 600V | PT | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IKP03N120H2XKSA1 | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | ROHS3 Compliant | TO-220-3 | Through Hole | -40°C~150°C TJ | Standard | 62.5W | PG-TO220-3 | 42ns | 2.8V @ 15V, 3A | 1.2V | 9.6A | 800V, 3A, 82Ohm, 15V | 22nC | 9.9A | 9.2ns/281ns | 290μJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
STGPL6NC60D | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | ACTIVE (Last Updated: 7 months ago) | Through Hole | Tube | PowerMESH™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | TO-220-3 | Through Hole | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | STGPL6 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 56W | 1 | TO-220AB | N-CHANNEL | Single | 600V | 50ns | 42A | 600V | 600V | POWER CONTROL | SILICON | 10.5 ns | 2.9V @ 15V, 3A | 122 ns | 20V | 14A | 5.75V | 390V, 3A, 10 Ω, 15V | 12nC | 18A | 6.7ns/46ns | 46.5μJ (on), 23.5μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
 |
IKY40N120CS6XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Tube | TrenchStop™ | Active | Not Applicable | ROHS3 Compliant | TO-247-4 | Through Hole | -40°C~175°C TJ | Standard | 500W | 255ns | 2.15V @ 15V, 40A | Trench Field Stop | 1200V | 80A | 600V, 40A, 9 Ω, 15V | 285nC | 160A | 27ns/315ns | 1.45mJ (on), 1.55mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXBK75N170 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Through Hole | Tube | 2003 | BIMOSFET™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXB*75N170 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 1.04kW | 1040W | 1 | COLLECTOR | N-CHANNEL | Single | 1.5 μs | 200A | 1.7kV | 3.1V | POWER CONTROL | SILICON | 277 ns | 3.1V @ 15V, 75A | 840 ns | 20V | 1700V | 5.5V | 350nC | 580A | ||||||||||||||||||||||||||||||||||||||||||||
|
IRGP4069PBF | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | 268W | TO-247AC | 1.85V @ 15V, 35A | Trench | 600V | 76A | 400V, 35A, 10Ohm, 15V | 104nC | 105A | 46ns/105ns | 390μJ (on), 632μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IRGS4620DTRRPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 260.39037mg | -40°C~175°C TJ | Standard | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | Insulated Gate BIP Transistors | 140W | N-CHANNEL | Single | 68 ns | 20A | 600V | 1.85V | 1.97V | 1.85V @ 15V, 12A | 20V | 32A | 6.5V | 400V, 12A, 22 Ω, 15V | 25nC | 36A | 31ns/83ns | 75μJ (on), 225μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
NGB8202NT4G | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | Logic | 150W | D2PAK | 1.9V @ 4.5V, 20A | 440V | 20A | 300V, 9A, 1kOhm, 5V | 50A | -/5μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXGA16N60B2D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | 2010 | HiPerFAST™ | yes | Obsolete | 1 (Unlimited) | 2 | RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 1.59999g | -55°C~150°C TJ | Standard | Pure Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | IXG*16N60 | 4 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 150W | 150W | 1 | COLLECTOR | N-CHANNEL | Single | 30ns | 40A | 600V | 600V | POWER CONTROL | SILICON | 2.3V | 43 ns | 1.95V @ 15V, 12A | 280 ns | PT | 20V | 5.5V | 400V, 12A, 22 Ω, 15V | 24nC | 100A | 18ns/73ns | 160μJ (on), 120μJ (off) | ||||||||||||||||||||||||||||||||||||||||
|
SKP04N60XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2013 | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | LOW CONDUCTION LOSS | TO-220-3 | compliant | Through Hole | -55°C~150°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 50W | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | COLLECTOR | N-CHANNEL | 180ns | POWER CONTROL | SILICON | 38 ns | 2.4V @ 15V, 4A | 368 ns | NPT | 600V | 9.4A | 400V, 4A, 67 Ω, 15V | 24nC | 19A | 22ns/237ns | 131μJ | ||||||||||||||||||||||||||||||||||||||||||||||
 |
STGB3NB60KDT4 | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tape & Reel (TR) | PowerMESH™ | Obsolete | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | 6A | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | 150°C TJ | 600V | Standard | e3 | Matte Tin (Sn) | GULL WING | 245 | 30 | STGB3 | 3 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 50W | 1 | N-CHANNEL | Single | 50W | 45ns | 10A | 600V | 2.8V | 6A | POWER CONTROL | SILICON | 600V | 2.8V | 19 ns | 2.8V @ 15V, 3A | 220 ns | 20V | 7V | 480V, 3A, 10 Ω, 15V | 14nC | 24A | 14ns/33ns | 30μJ (on), 58μJ (off) | ||||||||||||||||||||||||||||||||||||
|
FGB40N6S2 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | Obsolete | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | Lead Free | 75A | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | 600V | Standard | FGB40N6 | 290W | 290W | Single | 290W | TO-263AB | 75A | 600V | 600V | 10ns | 1.9V | 2.7V @ 15V, 20A | 600V | 75A | 390V, 20A, 3Ohm, 15V | 35nC | 180A | 8ns/35ns | 115μJ (on), 195μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
|
LGB8206ATI | Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Active | 1 (Unlimited) | RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NGB8206ANSL3G | Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Tube | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | unknown | Surface Mount | -55°C~175°C TJ | Logic | NOT SPECIFIED | NOT SPECIFIED | NGB8206 | 150W | 1.9V @ 4.5V, 20A | 390V | 20A | 300V, 9A, 1k Ω, 5V | 50A | -/5μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
FGA60N65SMD | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | 2008 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 15.8mm | ROHS3 Compliant | Lead Free | No | 3 | LOW CONDUCTION LOSS | TO-3P-3, SC-65-3 | 20.1mm | 5mm | Through Hole | 6.401g | -55°C~175°C TJ | Standard | 8541.29.00.95 | e3 | Tin (Sn) | Insulated Gate BIP Transistors | 600W | 600W | 1 | N-CHANNEL | Single | 18 ns | 47 ns | 120A | 650V | 650V | 70ns | POWER CONTROL | 104 ns | SILICON | 1.9V | 2.5V @ 15V, 60A | Field Stop | 20V | 6V | 68ns | 400V, 60A, 3 Ω, 15V | 189nC | 180A | 18ns/104ns | 1.54mJ (on), 450μJ (off) | |||||||||||||||||||||||||||||||||||
 |
STGDL6NC60DIT4 | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tape & Reel (TR) | PowerMESH™ | Obsolete | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | Standard | GULL WING | STGDL6 | 3 | R-PSSO-G2 | Insulated Gate BIP Transistors | 50W | 50W | 1 | N-CHANNEL | Single | 6.7 ns | 600V | 23 ns | 13A | 600V | 600V | POWER CONTROL | 67 ns | SILICON | 10.5 ns | 2.9V @ 15V, 3A | 122 ns | 20V | 5.75V | 390V, 3A, 10 Ω, 15V | 12nC | 18A | 6.7ns/46ns | 32μJ (on), 24μJ (off) |
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