Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Supply Current | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Load Capacitance | Supplier Device Package | Output Characteristics | Access Time | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Serial Bus Type | I2C Control Byte | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
M29W256GL70ZS6F TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Cut Tape (CT) | 2013 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 64-LBGA | Surface Mount | -40°C~85°C TA | FLASH - NOR | M29W256 | 256Mb 32M x 8 16M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7134LA55P | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Bulk | 2013 | no | Discontinued | 1 (Unlimited) | 48 | EAR99 | 70°C | 0°C | 5V | 2 | 61.7mm | RoHS Compliant | Contains Lead | No | 48 | AUTOMATIC POWER-DOWN; BATTERY BACKUP | PDIP | Parallel | 5.5V | 4.5V | 32 kb | 15.24mm | 3.8mm | CMOS | 5.08mm | 1 | 200mA | e0 | Tin/Lead (Sn85Pb15) | DUAL | 245 | 5V | 48 | COMMERCIAL | SRAMs | 5V | 3-STATE | 55 ns | 4kB | RAM, SDR, SRAM | 24b | 4KX8 | Asynchronous | 0.0015A | 8b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V9369L7PFI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tape & Reel | 2009 | no | Active | 3 (168 Hours) | 100 | 85°C | -40°C | 3.3V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | LQFP | Parallel | 288 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | INDUSTRIAL | YES | 0.65mm | 3V | SRAMs | 3.6V | 3-STATE | RAM, SRAM | 28b | 0.335mA | 16KX18 | 83MHz | 0.015A | 7.5 ns | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "S99AL016J0210") |
S99AL016J0210 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 50 Weeks | Bulk | Obsolete | Vendor Undefined | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
93LC46BT/ST | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2001 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5.5V | ROHS3 Compliant | Lead Free | Tin | No | 8 | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 8-TSSOP (0.173, 4.40mm Width) | 2-Wire, Serial | 1 kb | Surface Mount | 0°C~70°C TA | CMOS | 1 | 2mA | e3 | DUAL | 260 | 2.7V | 40 | 93LC46B | 8 | 0.635mm | 2.5V | 3/5V | 6V | 6 ms | 1Kb 64 x 16 | Non-Volatile | 2.5V~5.5V | 64X16 | 16 | 2MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | SOFTWARE | MICROWIRE | EEPROM | SPI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43TR16640AL-125JBL-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tape & Reel (TR) | Discontinued | 3 (168 Hours) | 1.35V | ROHS3 Compliant | Copper, Silver, Tin | 96 | 96-TFBGA | 1 Gb | Surface Mount | 0°C~95°C TC | SDRAM - DDR3L | 310mA | 20ns | 1Gb 64M x 16 | Volatile | 13b | 1.283V~1.45V | 16b | 800MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT45DB021E-MHN-Y | Adesto Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tray | 1997 | Active | 1 (Unlimited) | 8 | 6mm | ROHS3 Compliant | Gold | 8 | 8-UDFN Exposed Pad | SPI, Serial | 2 Mb | Surface Mount | -40°C~85°C TC | CMOS | 0.6mm | 1 | 16mA | e4 | DUAL | 260 | 1.8V | NOT SPECIFIED | 8 | 1.27mm | 1.65V | Not Qualified | 3.6V | 8 ns | 2Mb 264Bytes x 1024 pages | Non-Volatile | 22b | 1.65V~3.6V | 2MX1 | 1 | Synchronous | 8b | 70MHz | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 2.7V | 256B | SPI | FLASH | SPI | 8μs, 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70T3319S133BF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2010 | no | Active | 3 (168 Hours) | 208 | 70°C | 0°C | 2.5V | 2 | 15mm | RoHS Compliant | Contains Lead | No | 208 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | Parallel | 2.6V | 2.4V | 4 Mb | 133MHz | 15mm | 1.4mm | CMOS | 1 | 370mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 2.5V | 208 | COMMERCIAL | 0.8mm | SRAMs | 3-STATE | 15 ns | RAM, SRAM | 18b | Synchronous | 0.015A | 18b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42SM16800H-75BLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 54-TFBGA | Surface Mount | -40°C~85°C TA | SDRAM - Mobile | 6ns | 128Mb 8M x 16 | Volatile | 2.7V~3.6V | 133MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
93LC46CX-I/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tube | 2004 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Serial | 1 kb | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1.75mm | 1 | 2mA | e3 | DUAL | 260 | 3V | 40 | 93LC46C | 8 | 1.27mm | 2.5V | 3/5V | 5.5V | 200 ns | 1Kb 128 x 8 64 x 16 | Non-Volatile | 2.5V~5.5V | 64X16 | 16 | 3MHz | 0.000001A | 8 | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 6ms | MICROWIRE | EEPROM | SPI | 6ms | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W947D2HBJX5I | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Surface Mount | Tray | 2011 | Active | 3 (168 Hours) | 90 | EAR99 | 1.8V | 1 | 13mm | ROHS3 Compliant | 90 | AUTO/SELF REFRESH | 90-TFBGA | 128 Mb | Surface Mount | -40°C~85°C TA | SDRAM - Mobile LPDDR | SYNCHRONOUS | 1.025mm | 8542.32.00.02 | 1 | 55mA | BOTTOM | 1.8V | 90 | 0.8mm | 1.7V | Not Qualified | 1.95V | 3-STATE | 5ns | 128Mb 4M x 32 | Volatile | 14b | 1.7V~1.95V | 4MX32 | 32 | 200MHz | 0.00001A | COMMON | 4096 | DRAM | Parallel | 15ns | 24816 | 24816 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT45DB081B-RC-2.5 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 2 (1 Year) | Non-RoHS Compliant | 28-SOIC (0.342, 8.69mm Width) | Surface Mount | 0°C~70°C TC | FLASH | AT45DB081 | 28-SOIC | 8Mb 264Bytes x 4096 pages | Non-Volatile | 2.5V~3.6V | 15MHz | FLASH | SPI | 14ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V65802S150BG | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 119-BGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V65802 | 119-PBGA (14x22) | 3.8ns | 9Mb 512K x 18 | Volatile | 3.135V~3.465V | 150MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S99FL164KMM11 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 50 Weeks | Tube | Obsolete | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V632S7PFG | Renesas Electronics America Inc. | 20.3531 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | IDT71V632 | 100-TQFP (14x14) | 7ns | 2Mb 64K x 32 | Volatile | 3.135V~3.63V | 66MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
25LC160B-I/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | Tube | 2007 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 9.27mm | Non-RoHS Compliant | No | 8 | 8-DIP (0.300, 7.62mm) | SPI, Serial | No SVHC | 16 kb | 3.3mm | 6.35mm | Through Hole | -40°C~85°C TA | CMOS | 1 | 6mA | e3 | Matte Tin (Sn) | DUAL | 5V | 25LC160B | 8 | 2.54mm | 2.5V | 3/5V | 5.5V | 100 ns | 16Kb 2K x 8 | Non-Volatile | 2.5V~5.5V | 10MHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | SPI | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7035S15PF8/E | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | 144Kb 8K x 18 | Volatile | 4.5V~5.5V | SRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS1230AB-120IND+ | Maxim Integrated | 24.4303 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tube | 2002 | yes | Active | 1 (Unlimited) | 28 | EAR99 | ROHS3 Compliant | 28-DIP Module (0.600, 15.24mm) | Through Hole | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 8473.30.11.40 | 1 | e3 | MATTE TIN | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | DS1230AB | 28 | NO | 2.54mm | R-XDMA-P28 | 4.75V | SRAMs | Not Qualified | 5V | 5.25V | 256Kb 32K x 8 | Non-Volatile | 0.085mA | 4.75V~5.25V | 32KX8 | 8 | 262144 bit | 0.0006A | 120 ns | NVSRAM | Parallel | 120ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
SST49LF008A-33-4C-EIE-T | Microchip Technology | 5.1532 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel (TR) | 2001 | SST49 | Active | 3 (168 Hours) | 40 | 3.3V | 18.4mm | ROHS3 Compliant | Lead Free | No | 40 | 40-TFSOP (0.724, 18.40mm Width) | Parallel, SPI, Serial | 8 Mb | Surface Mount | 0°C~85°C TA | CMOS | 1.2mm | 1 | 12mA | e3 | Matte Tin (Sn) - annealed | DUAL | 3.3V | SST49LF008A | 0.5mm | 3V | 3.6V | 120ns | 8Mb 1M x 8 | Non-Volatile | 11b | 3V~3.6V | 1MX8 | 8 | Asynchronous | 8b | 33MHz | 0.0001A | 8b | 3V | YES | YES | 256 | FLASH | Parallel | 20μs | 4K | TOP | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W25Q80BWSSIG | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2016 | SpiFlash® | Obsolete | 3 (168 Hours) | 8 | EAR99 | 5.23mm | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | SPI, Serial | 5.23mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 2.16mm | 8542.32.00.51 | 1 | DUAL | 1.8V | 8 | YES | 1.27mm | S-PDSO-G8 | 1.65V | Not Qualified | 1.8V | 1.95V | 8Mb 1M x 8 | Non-Volatile | 0.025mA | 1.65V~1.95V | 8MX1 | 1 | 8388608 bit | 80MHz | 0.000005A | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 1.8V | SPI | FLASH | SPI | 800μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7025S55PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | Active | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | TQFP | Parallel | 5.5V | 4.5V | 128 kb | 14mm | 1.4mm | 250mA | 55 ns | 16kB | RAM, SDR, SRAM | 13b | Asynchronous | 16b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT24C32N-10SI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1997 | Obsolete | 1 (Unlimited) | 8 | EAR99 | 4.9mm | Non-RoHS Compliant | DATA RETENTION: 100 YEARS | 8-SOIC (0.154, 3.90mm Width) | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.75mm | 8542.32.00.51 | 1 | e0 | TIN LEAD | DUAL | 240 | 3V | 30 | AT24C32 | YES | 1.27mm | R-PDSO-G8 | 2.7V | Not Qualified | 3/5V | 5.5V | OPEN-DRAIN | 900ns | 32Kb 4K x 8 | Non-Volatile | 0.003mA | 4.5V~5.5V | 4KX8 | 8 | 32768 bit | SERIAL | 400kHz | 5e-7A | 100 | 1000000 Write/Erase Cycles | HARDWARE | 10ms | I2C | 1010DDDR | EEPROM | I2C | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||||||
|
DS1225AD-85+ | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Through Hole | Tube | 2004 | yes | Active | 1 (Unlimited) | 28 | EAR99 | 5V | 39.37mm | ROHS3 Compliant | Lead Free | No | 28 | 10 YEAR DATA RETENTION | 28-DIP Module (0.600, 15.24mm) | Unknown | 64 kb | 85GHz | 10.67mm | 18.29mm | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | 75mA | 8473.30.11.40 | 1 | e3 | TIN | DUAL | 260 | 5V | DS1225A | 28 | 2.54mm | SRAMs | 5V | 5pF | 64Kb 8K x 8 | Non-Volatile | 8b | 4.5V~5.5V | 8KX8 | 8b | 0.01A | 85 ns | NVSRAM | Parallel | 85ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT46H32M16LFBF-5 IT:B | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2009 | yes | Obsolete | 3 (168 Hours) | 60 | EAR99 | 1 | 9mm | ROHS3 Compliant | AUTO/SELF REFRESH | 60-VFBGA | 8mm | Surface Mount | -40°C~85°C TA | SDRAM - Mobile LPDDR | SYNCHRONOUS | 1mm | 8542.32.00.28 | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 1.8V | 30 | MT46H32M16 | 60 | YES | 0.8mm | R-PBGA-B60 | 1.7V | Not Qualified | 1.8V | 1.95V | 3-STATE | 5ns | 512Mb 32M x 16 | Volatile | 0.13mA | 1.7V~1.95V | 32MX16 | 16 | 536870912 bit | 200MHz | 0.00001A | COMMON | 8192 | DRAM | Parallel | 15ns | 248 | 248 | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FL064LABBHV023 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Tape & Reel (TR) | FL-L | Active | 3 (168 Hours) | 24 | 8mm | ROHS3 Compliant | IT ALSO HAVE X1 MEMORY WIDTH | 24-TBGA | 6mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1mm | R-PBGA-B24 | 2.7V | 3.6V | 64Mb 8M x 8 | Non-Volatile | 2.7V~3.6V | 16MX4 | 4 | 67108864 bit | SERIAL | 108MHz | 2 | 3V | FLASH | SPI - Quad I/O, QPI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT29F256G08EECBBJ4-6:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 132-VBGA | Surface Mount | 0°C~70°C TA | FLASH - NAND | 132-VBGA (12x18) | 256Gb 32G x 8 | Non-Volatile | 2.7V~3.6V | 167MHz | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT49BV002-90JC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1997 | Obsolete | 2 (1 Year) | Non-RoHS Compliant | 32-LCC (J-Lead) | Surface Mount | 0°C~70°C TC | FLASH | AT49BV002 | 32-PLCC (13.97x11.43) | 90ns | 2Mb 256K x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 50μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
DS1225AD-85 | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | no | Obsolete | 3 (168 Hours) | 28 | 38.865mm | Non-RoHS Compliant | 10 YEAR DATA RETENTION | 28-DIP Module (0.600, 15.24mm) | 15.24mm | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 10.54mm | 1 | e0 | TIN LEAD | DUAL | 245 | 5V | NOT SPECIFIED | 28 | NO | 2.54mm | R-PDMA-P28 | 4.5V | COMMERCIAL | 5.5V | 64Kb 8K x 8 | Non-Volatile | 4.5V~5.5V | 8KX8 | 8 | 65536 bit | 85 ns | NVSRAM | Parallel | 85ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
11AA161-I/TO | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | Bulk | 2009 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Tin | 3 | TO-226-3, TO-92-3 (TO-226AA) | Serial | 16 kb | Through Hole | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1 | 5mA | e3 | BOTTOM | NOT SPECIFIED | 5V | NOT SPECIFIED | 11AA161 | 3 | 1.27mm | 1.8V | Not Qualified | 2/5V | 5.5V | 16Kb 2K x 8 | Non-Volatile | 1.8V~5.5V | 2KX8 | 8 | 100kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 10ms | 1-WIRE | EEPROM | Single Wire | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MX29F200CTTI-90G | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Tray | 2009 | MX29F | Active | 3 (168 Hours) | 48 | EAR99 | 18.4mm | ROHS3 Compliant | 48 | TOP BOOT BLOCK | 48-TFSOP (0.724, 18.40mm Width) | 12mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | ASYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | 48 | YES | 0.5mm | 4.5V | Not Qualified | 5V | 5.5V | 2Mb 256K x 8 | Non-Volatile | 0.05mA | 4.5V~5.5V | 128KX16 | 16 | 2097152 bit | 0.000005A | 90 ns | 8 | 100000 Write/Erase Cycles | 5V | YES | YES | YES | 1213 | YES | FLASH | Parallel | 90ns | 16K8K32K64K | TOP |
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