Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Supply Current | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Type | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Operating Temperature (Max) | Operating Temperature (Min) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Supplier Device Package | Output Characteristics | Access Time | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Memory IC Type | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| S29GL064S80TFIV10 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Tray | 2015 | GL-S | Active | 3 (168 Hours) | 56 | 3V | 18.4mm | ROHS3 Compliant | 56-TFSOP (0.724, 18.40mm Width) | 64 Mb | 14mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | ASYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | DUAL | 3V | YES | 0.5mm | R-PDSO-G56 | 2.7V | 3.6V | 80ns | 64Mb 8M x 8 4M x 16 | Non-Volatile | 1.65V~3.6V | 8MX8 | 8 | 3V | FLASH | Parallel | 60ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71V256SA20PZG | Renesas Electronics America Inc. | 25.9389 |
Min: 1 Mult: 1 |
0.00000000 | download | 15 Weeks | Tube | Active | 3 (168 Hours) | ROHS3 Compliant | 28-TSSOP (0.465, 11.80mm Width) | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT71V256 | 28-TSOP | 20ns | 256Kb 32K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 20ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDT71V35761S200BQG8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | 165-TBGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | IDT71V35761 | 165-CABGA (13x15) | 3.1ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | 200MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AS8C803600-QC150N | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | 2007 | yes | Active | 3 (168 Hours) | 100 | 3.3V | 2 | ROHS3 Compliant | Lead Free | No | 100 | PIPELINED ARCHITECTURE | 100-LQFP | 9 Mb | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | 1.6mm | 1 | QUAD | 3.3V | 100 | YES | 0.65mm | 3.135V | 3.465V | 3.8ns | 9Mb 256K x 36 | Volatile | 18b | 3.135V~3.465V | 36 | 150MHz | SRAM | Parallel | 6.7ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TH58BVG2S3HTA00 | Kioxia America, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Benand™ | Active | 3 (168 Hours) | RoHS Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | 0°C~70°C TA | FLASH - NAND (SLC) | 48-TSOP I | 25ns | 4Gb 512M x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS42SM16320E-75BLI | ISSI, Integrated Silicon Solution Inc | 16.3645 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | Active | 3 (168 Hours) | 54 | 1 | 8mm | ROHS3 Compliant | AUTO/SELF REFRESH | 54-TFBGA | 8mm | Surface Mount | -40°C~85°C TA | SDRAM - Mobile | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | 3.3V | YES | 0.8mm | S-PBGA-B54 | 2.7V | 3.6V | 6ns | 512Mb 32M x 16 | Volatile | 3V~3.6V | 32MX16 | 16 | 536870912 bit | 133MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT71V3558S200PF | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V3558 | 3.2ns | 4.5Mb 256K x 18 | Volatile | 3.135V~3.465V | 200MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT25640A-10PI-2.7 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 8-DIP (0.300, 7.62mm) | Through Hole | -40°C~85°C TA | AT25640 | 64Kb 8K x 8 | Non-Volatile | 2.7V~5.5V | 20MHz | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT71V416L10YI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Rail/Tube | 2007 | 85°C | -40°C | 3.3V | 1 | Non-RoHS Compliant | 44 | Parallel | 3.6V | 3V | 4 Mb | 10 ns | RAM, SRAM - Asynchronous | 18b | Asynchronous | 16b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS62WV5128BLL-55TLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tape & Reel (TR) | Active | 2 (1 Year) | 85°C | -40°C | 3.3V | 1 | ROHS3 Compliant | No | 32 | 32-TFSOP (0.724, 18.40mm Width) | Parallel | 3.6V | 2.5V | 4 Mb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 45mA | 32-TSOP I | 55ns | 4Mb 512K x 8 | Volatile | 19b | 2.5V~3.6V | Asynchronous | 8b | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT53B256M32D1NP-062 AAT:C | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Tray | Not For New Designs | 200-WFBGA | Surface Mount | -40°C~105°C TA | SDRAM - Mobile LPDDR4 | 8Gb 256M x 32 | Volatile | 1.1V | 1600MHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS42SM32160E-75BLI | ISSI, Integrated Silicon Solution Inc | 16.2805 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Surface Mount | Tray | Active | 3 (168 Hours) | 90 | 3.3V | 1 | 13mm | ROHS3 Compliant | 90 | AUTO/SELF REFRESH | 90-TFBGA | 512 Mb | Surface Mount | -40°C~85°C TA | SDRAM - Mobile | SYNCHRONOUS | 120mA | 1.2mm | 1 | 120mA | BOTTOM | 3.3V | 0.8mm | 2.7V | 3.6V | 6ns | 512Mb 16M x 32 | Volatile | 15b | 2.7V~3.6V | 16MX32 | 32 | 32b | 133MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61LF51236A-7.5TQLI | ISSI, Integrated Silicon Solution Inc | 19.7536 |
Min: 1 Mult: 1 |
0.00000000 | Tray | yes | Obsolete | 2 (1 Year) | 100 | 3A991.B.2.A | 3.3V | 4 | 20mm | RoHS Compliant | No | 100 | PIPELINED ARCHITECTURE, FLOW-THROUGH | 100-LQFP | 18 Mb | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 1.6mm | 1 | 250mA | e3 | Matte Tin (Sn) - annealed | QUAD | 260 | 3.3V | 40 | 100 | YES | 0.65mm | 3.135V | 3-STATE | 7.5ns | 18Mb 512K x 36 | Volatile | 19b | 3.135V~3.6V | 512KX36 | 36 | Synchronous | 117MHz | 0.075A | 36b | COMMON | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT46H16M32LFB5-6 AIT:C TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tape & Reel (TR) | 2014 | Active | 3 (168 Hours) | ROHS3 Compliant | 90-VFBGA | Surface Mount | -40°C~85°C TA | SDRAM - Mobile LPDDR | MT46H16M32 | 5ns | 512Mb 16M x 32 | Volatile | 1.7V~1.95V | 166MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT53B128M32D1DS-062 IT:A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 200-WFBGA | Surface Mount | -40°C~85°C TA | SDRAM - Mobile LPDDR4 | 4Gb 128M x 32 | Volatile | 1.1V | 1.6GHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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M29W800DB70N6E | Micron Technology Inc. | 0.9669 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2008 | yes | Obsolete | 3 (168 Hours) | 48 | EAR99 | 18.4mm | ROHS3 Compliant | Tin | No | 48 | BOTTOM BOOT BLOCK | 48-TFSOP (0.724, 18.40mm Width) | No SVHC | 8 Mb | 12mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.2mm | 8542.32.00.51 | 1 | 10mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 3V | 30 | M29W800 | 48 | YES | 0.5mm | 3/3.3V | 2.7V | 8Mb 1M x 8 512K x 16 | Non-Volatile | 2.7V~3.6V | 512KX16 | 16 | Asynchronous | 0.0001A | 70 ns | 8 | YES | YES | YES | 12115 | YES | YES | FLASH | Parallel | 70ns | 16K8K32K64K | BOTTOM | ||||||||||||||||||||||||||||||||||||||||||||||||||
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70121L25JG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | 2008 | yes | Active | 1 (Unlimited) | 52 | EAR99 | 70°C | 0°C | 5V | 2 | 19mm | RoHS Compliant | Lead Free | 52 | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP | PLCC | Parallel | 5.5V | 4.5V | 18 kb | 19mm | 3.63mm | CMOS | ASYNCHRONOUS | 4.57mm | 1 | e3 | Matte Tin (Sn) - annealed | QUAD | J BEND | 260 | 5V | NOT SPECIFIED | 52 | COMMERCIAL | YES | SRAMs | Not Qualified | 5V | 3-STATE | 25 ns | 2.3kB | RAM, SDR, SRAM | 22b | 0.005A | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F128G08CFAAAWP-ITZ:A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 4 Weeks | Tube | yes | Obsolete | 3 (168 Hours) | 48 | 3A991.B.1.A | 3.3V | 18.4mm | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | 12mm | Surface Mount | -40°C~85°C TA | FLASH - NAND | ASYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | e3 | MATTE TIN | DUAL | 260 | 3.3V | 30 | 48 | YES | 0.5mm | R-PDSO-G48 | 2.7V | 3.6V | 128Gb 16G x 8 | Non-Volatile | 2.7V~3.6V | 16GX8 | 8 | 137438953472 bit | 2.7V | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT46H128M32L2MC-5 WT:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2013 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 240-WFBGA | Surface Mount | -25°C~85°C TA | SDRAM - Mobile LPDDR | MT46H128M32 | 5ns | 4Gb 128M x 32 | Volatile | 1.7V~1.95V | 200MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CY7C09269V-12AC | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | no | Obsolete | 3 (168 Hours) | 100 | 14mm | Non-RoHS Compliant | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 100-LQFP | 14mm | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Synchronous | 1.6mm | 1 | e0 | TIN LEAD | QUAD | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 100 | YES | 0.5mm | S-PQFP-G100 | 3V | COMMERCIAL | 3.6V | 12ns | 256Kb 16K x 16 | Volatile | 3V~3.6V | 16KX16 | 16 | 262144 bit | 50MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY62138FV30LL-45SXIT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | MoBL® | yes | Obsolete | 3 (168 Hours) | 32 | 3V | 1 | 20.4465mm | ROHS3 Compliant | Lead Free | No | 32 | 32-SOIC (0.445, 11.30mm Width) | 2 Mb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 2.997mm | 1 | 18mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 3V | 30 | CY62138 | 2.2V | 3.6V | 3-STATE | 2Mb 256K x 8 | Volatile | 18b | 2.2V~3.6V | 256KX8 | 8 | Asynchronous | 0.000004A | 45 ns | 8b | COMMON | SRAM | Parallel | 45ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT93C46A-10SU-2.7 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C TA | AT93C46A | 1Kb 128 x 8 64 x 16 | Non-Volatile | 2.7V~5.5V | 2MHz | EEPROM | SPI | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MX25L12873FM2I-10G | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2017 | MXSMIO™ | Not For New Designs | 8 | 5.28mm | RoHS Compliant | CAN BE ORGNISED AS 128 MBIT X 1 | 8-SOIC (0.209, 5.30mm Width) | 5.23mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 2.16mm | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | 8 | YES | 1.27mm | R-PDSO-G8 | 2.7V | Not Qualified | 3/3.3V | 3.6V | 128Mb 16M x 8 | Non-Volatile | 0.025mA | 2.7V~3.6V | 32MX4 | 4 | 134217728 bit | SERIAL | 104MHz | 0.00002A | 2 | 20 | 100000 Write/Erase Cycles | SOFTWARE | 2.7V | SPI | FLASH | SPI | 30μs, 1.5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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M27C1001-10F1 | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | yes | Obsolete | 1 (Unlimited) | 32 | EAR99 | 5V | 42.04mm | ROHS3 Compliant | Lead Free | No | 32 | 00.1.142 | 32-CDIP (0.600, 15.24mm) Window | 1 Mb | 100GHz | 4.5mm | 13.36mm | Through Hole | 0°C~70°C TA | EPROM - UV | 50mA | 1 | 30mA | e3 | Matte Tin (Sn) | DUAL | 245 | 5V | M27C1001 | 32 | 2.54mm | 5V | 3-STATE | 100ns | 1Mb 128K x 8 | Non-Volatile | 4.5V~5.5V | 128KX8 | 0.0001A | COMMON | EPROM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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W972GG6KB-18 | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tray | Active | 3 (168 Hours) | 84 | EAR99 | 1 | 12.5mm | ROHS3 Compliant | AUTO/SELF REFRESH | 84-TFBGA | 8mm | Surface Mount | 0°C~85°C TC | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B84 | 1.7V | 1.9V | 350ps | 2Gb 128M x 16 | Volatile | 1.7V~1.9V | 128MX16 | 16 | 2147483648 bit | 533MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BR25G512FJ-3GE2 | ROHM Semiconductor | 8.2296 |
Min: 1 Mult: 1 |
0.00000000 | download | 9 Weeks | Cut Tape (CT) | Active | 1 (Unlimited) | 8 | 4.9mm | ROHS3 Compliant | SEATED HT-CALCULATED | 8-SOIC (0.154, 3.90mm Width) | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.65mm | 1 | DUAL | NOT SPECIFIED | NOT SPECIFIED | YES | 1.27mm | R-PDSO-G8 | 1.8V | 5.5V | 512Kb 64K x 8 | Non-Volatile | 1.8V~5.5V | 64KX8 | 8 | 524288 bit | SERIAL | 10MHz | 5ms | SPI | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MX66U51235FZ4I-10G | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Tray | Not For New Designs | 3 (168 Hours) | 8 | 8mm | Non-RoHS Compliant | Lead Free | ALSO IT CAN BE CONFIGURED AS 512M X 1 BIT | 6mm | CMOS | SYNCHRONOUS | 0.8mm | 1 | NOR TYPE | e3 | Tin (Sn) | DUAL | NO LEAD | 260 | 1.8V | 40 | INDUSTRIAL | YES | 1.27mm | R-PDSO-N8 | 1.65V | 85°C | -40°C | Flash Memories | Not Qualified | 1.8V | 2V | 0.04mA | 128MX4 | 4 | 536870912 bit | FLASH | SERIAL | 108MHz | 0.00004A | 2 | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 1.8V | SPI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F8G08ABABAWP-AITX:B | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 4 Weeks | Tray | Last Time Buy | RoHS Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NAND | 8Gb 1G x 8 | Non-Volatile | 2.7V~3.6V | 3.3V | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1426JV18-300BZXC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2003 | Obsolete | 3 (168 Hours) | 165 | 3A991.B.2.A | 17mm | ROHS3 Compliant | 165 | PIPELINED ARCHITECTURE | 165-LBGA | unknown | 15mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QDR II | 1.4mm | 8542.32.00.41 | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 1.8V | CY7C1426 | 165 | YES | 1mm | 1.7V | Not Qualified | 1.5/1.81.8V | 1.9V | 3-STATE | 450 ps | 36Mb 4M x 9 | Volatile | 0.97mA | 1.7V~1.9V | 4MX9 | 9 | 37748736 bit | 300MHz | 0.35A | SEPARATE | 1.7V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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24LC64X-I/ST | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tube | 2002 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.5mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 8-TSSOP (0.173, 4.40mm Width) | I2C, Serial | No SVHC | 64 kb | 1.05mm | 3.1mm | Surface Mount | -40°C~85°C TA | CMOS | 1 | 3mA | e3 | DUAL | 260 | 5V | 40 | 24LC64 | 8 | 0.65mm | 2.5V | 2/5V | 5.5V | 900ns | 64Kb 8K x 8 | Non-Volatile | 2.5V~5.5V | 400kHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms |
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S29GL064S80TFIV10 Cypress Semiconductor Corp
GL-S Memory IC GL-S Series 64 Mb kb 18.4mm mm
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IDT71V416L10YI Integrated Device Technology (IDT)
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IS42SM32160E-75BLI ISSI, Integrated Silicon Solution Inc
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M29W800DB70N6E Micron Technology Inc.
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CY7C1426JV18-300BZXC Cypress Semiconductor Corp
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24LC64X-I/ST Microchip Technology
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