Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Common Flash Interface | Serial Bus Type | I2C Control Byte | Reverse Pinout | Access Mode | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
M25PX80-VMP6TGT0 TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 8-VDFN Exposed Pad | Surface Mount | -40°C~85°C TA | FLASH - NOR | 8-VFQFPN (6x5) | 8Mb 1M x 8 | Non-Volatile | 2.3V~3.6V | 75MHz | FLASH | SPI | 15ms, 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W632GG6MB09I | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | 96 | EAR99 | 1 | 13mm | ROHS3 Compliant | AUTO/SELF REFRESH | 96-VFBGA | 7.5mm | Surface Mount | -40°C~95°C TC | SDRAM - DDR3 | SYNCHRONOUS | 1mm | 1 | BOTTOM | 1.5V | YES | 0.8mm | R-PBGA-B96 | 1.425V | 1.575V | 20ns | 2Gb 128M x 16 | Volatile | 1.425V~1.575V | 128MX16 | 16 | 2147483648 bit | 1.067GHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
93LC66B-E/ST | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tube | 2011 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.4mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-TSSOP (0.173, 4.40mm Width) | Serial | 4 kb | 3mm | Surface Mount | -40°C~125°C TA | CMOS | 1.2mm | 1 | 2mA | e3 | DUAL | 260 | 3V | 40 | 93LC66B | 8 | 0.65mm | 2.5V | 3/5V | 5.5V | 250 ns | 4Kb 256 x 16 | Non-Volatile | 2.5V~5.5V | 256X16 | 16 | 2MHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 6ms | MICROWIRE | EEPROM | SPI | 6ms | |||||||||||||||||||||||||||||||||||||||||||||||
 |
71342LA45J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 52 | EAR99 | 70°C | 0°C | 5V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | PLCC | Parallel | 5.5V | 4.5V | 32 kb | 19mm | 3.63mm | CMOS | 4.57mm | 1 | 200mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 3-STATE | 45 ns | 4kB | RAM, SDR, SRAM | 24b | 4KX8 | Asynchronous | 0.0015A | 8b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24LC16BH-E/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2007 | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 9.271mm | ROHS3 Compliant | Tin | 8 | 8-DIP (0.300, 7.62mm) | I2C, Serial | 16 kb | 7.62mm | Through Hole | -40°C~125°C TA | CMOS | SYNCHRONOUS | 5.334mm | 1 | 3mA | e3 | DUAL | NOT APPLICABLE | 2.5V | NOT APPLICABLE | 24LC16BH | 8 | 2.54mm | 1.7V | Not Qualified | 900ns | 16Kb 2K x 8 | Non-Volatile | 2.5V~5.5V | 8 | 400kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010MMMR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
7008L35J8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 84-LCC (J-Lead) | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7008 | 84-PLCC (29.21x29.21) | 35ns | 512Kb 64K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 35ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS6C1008-55SINLTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | 2006 | yes | Active | 3 (168 Hours) | ROHS3 Compliant | 32 | 32-SOIC (0.445, 11.30mm Width) | unknown | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | NOT SPECIFIED | NOT SPECIFIED | 1Mb 128K x 8 | Volatile | 2.7V~5.5V | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
6116SA25SOG | Integrated Device Technology (IDT) | 4.6324 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Bulk | 2013 | yes | Active | 1 (Unlimited) | 24 | EAR99 | 70°C | 0°C | 5V | 1 | 15.4mm | RoHS Compliant | Lead Free | No | 24 | SOIC | Parallel | 5.5V | 4.5V | 16 kb | 7.6mm | 2.34mm | CMOS | 1 | 100mA | e3 | Matte Tin (Sn) - annealed | DUAL | GULL WING | 260 | 5V | 30 | 24 | COMMERCIAL | SRAMs | 5V | 3-STATE | 25 ns | 2kB | RAM, SDR, SRAM - Asynchronous | 11b | 2KX8 | Asynchronous | 0.002A | 8b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RD48F3000P0ZTQ0A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2009 | StrataFlash™ | Obsolete | 3 (168 Hours) | 88 | Non-RoHS Compliant | 88-TFBGA, CSPBGA | unknown | Surface Mount | -40°C~85°C TC | FLASH - NOR | BOTTOM | 48F3000P0 | YES | 0.8mm | R-PBGA-B88 | Not Qualified | 1.81.8/3.3V | 128Mb 8M x 16 | Non-Volatile | 0.028mA | 1.7V~2V | 8MX16 | 16 | 134217728 bit | 52MHz | 0.000075A | 85 ns | NO | NO | YES | 4127 | 4words | YES | FLASH | Parallel | 85ns | 16K64K | TOP | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71T75602S166BGG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | 2012 | yes | Active | 3 (168 Hours) | 119 | 70°C | 0°C | 2.5V | 1 | 14mm | RoHS Compliant | Lead Free | No | 119 | PIPELINED ARCHITECTURE | BGA | Parallel | 2.625V | 2.375V | 18 Mb | 166MHz | 22mm | 2.15mm | CMOS | 2.36mm | 1 | 245mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 2.5V | 30 | 119 | COMMERCIAL | SRAMs | 3-STATE | 3.5 ns | 166MHz | 2.3MB | RAM, SDR, SRAM | 19b | Synchronous | 0.04A | 36b | COMMON | 2.38V | |||||||||||||||||||||||||||||||||||||||||||||||||
.png "7133LA55J8") |
7133LA55J8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 68-LCC (J-Lead) | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7133 | 32Kb 2K x 16 | Volatile | 4.5V~5.5V | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
CMSMISC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | Last Time Buy | 3 (168 Hours) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61NLF12836A-7.5TQLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tape & Reel (TR) | Active | 2 (1 Year) | 85°C | -40°C | 3.3V | 4 | ROHS3 Compliant | No | 100 | 100-LQFP | Parallel | 3.465V | 3.135V | 4 Mb | 117MHz | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 160mA | 117MHz | 100-TQFP (14x20) | 7.5ns | 4.5Mb 128K x 36 | Volatile | 17b | 3.135V~3.465V | Synchronous | 117MHz | 36b | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M25PX80-VMN6TP TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2014 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | M25PX80 | 8-SO | 8Mb 1M x 8 | Non-Volatile | 2.3V~3.6V | 75MHz | FLASH | SPI | 15ms, 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IS61NLP51218A-200TQLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tape & Reel (TR) | Active | 2 (1 Year) | 100 | 3.3V | 2 | ROHS3 Compliant | 100 | 100-LQFP | 9 Mb | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 280mA | QUAD | YES | 0.635mm | Not Qualified | 3-STATE | 3.1ns | 9Mb 512K x 18 | Volatile | 19b | 3.135V~3.465V | 18 | Synchronous | 200MHz | 0.05A | 18b | COMMON | 3.14V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
24LC16B-E/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | Tube | 2005 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 400μm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 1 MILLION ERASE/WRITE CYCLES | 8-DIP (0.300, 7.62mm) | I2C, Serial | 16 kb | 195μm | 280μm | Through Hole | -40°C~125°C TA | CMOS | 1 | 3mA | e3 | DUAL | 5V | 24LC16B | 8 | 2.54mm | 2.5V | 3/5V | 5.5V | 900ns | 16Kb 2K x 8 | Non-Volatile | 2.5V~5.5V | 400kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010MMMR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||
|
24FC01-E/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Active | Not Applicable | 8 | 9.27mm | 8-DIP (0.300, 7.62mm) | 7.62mm | Through Hole | -40°C~125°C TA | CMOS | SYNCHRONOUS | 4.32mm | 1 | DUAL | NO | 2.54mm | R-PDIP-T8 | 1.7V | 5.5V | 450ns | 1Kb 128 x 8 | Non-Volatile | 0.003mA | 1.7V~5.5V | 128X8 | 8 | 1024 bit | SERIAL | 1MHz | 0.000003A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010XXXR | NO | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS46LD32320A-25BLA2-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Discontinued | 3 (168 Hours) | ROHS3 Compliant | 134-TFBGA | Surface Mount | -40°C~105°C TC | SDRAM - Mobile LPDDR2-S4 | 1Gb 32M x 32 | Volatile | 1.14V~1.95V | 400MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7006L35G | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | 2009 | no | Active | 1 (Unlimited) | 68 | EAR99 | 70°C | 0°C | 5V | 2 | 29.46mm | RoHS Compliant | Contains Lead | No | 68 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | Parallel | 5.5V | 4.5V | 128 kb | 29.46mm | 3.68mm | CMOS | 1 | 210mA | e0 | Tin/Lead (Sn/Pb) | PERPENDICULAR | PIN/PEG | 240 | 5V | 68 | COMMERCIAL | SRAMs | 5V | 3-STATE | 35 ns | 16kB | RAM, SDR, SRAM | 28b | 16KX8 | Asynchronous | 0.0015A | 8b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43DR16320E-3DBLI | ISSI, Integrated Silicon Solution Inc | 4.1793 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tray | Active | 3 (168 Hours) | 84 | EAR99 | 1 | 10.5mm | ROHS3 Compliant | AUTO/SELF REFRESH | 84-TFBGA | 8mm | Surface Mount | -40°C~85°C TA | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B84 | 1.7V | 1.9V | 450ns | 512Mb 32M x 16 | Volatile | 1.7V~1.9V | 32MX16 | 16 | 536870912 bit | 333MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43LQ32128A-062BLI | ISSI, Integrated Silicon Solution Inc | 15.1996 |
Min: 1 Mult: 1 |
0.00000000 | 2 Weeks | Tray | Active | 3 (168 Hours) | 200 | 1 | 14.5mm | ROHS3 Compliant | TERM PITCH-MAX | 200-WFBGA | 10mm | Surface Mount | -40°C~95°C TC | SDRAM - Mobile LPDDR4 | SYNCHRONOUS | 0.8mm | 1 | BOTTOM | YES | 0.8mm | R-PBGA-B200 | 1.7V | 1.95V | 4Gb 128M x 32 | Volatile | 1.06V~1.17V 1.7V~1.95V | 128MX32 | 32 | 4294967296 bit | 1.6GHz | MULTI BANK PAGE BURST | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V416L12YG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2012 | yes | Active | 3 (168 Hours) | 44 | 70°C | 0°C | 3.3V | 1 | 28.6mm | RoHS Compliant | Lead Free | 44 | Parallel | 3.6V | 3V | 4 Mb | 10.2mm | 2.9mm | CMOS | 1 | 170mA | e3 | Matte Tin (Sn) - annealed | DUAL | J BEND | 260 | 3.3V | NOT SPECIFIED | 44 | INDUSTRIAL | SRAMs | Not Qualified | 3-STATE | 12 ns | 512kB | RAM, SDR, SRAM - Asynchronous | 18b | Asynchronous | 16b | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V25761SA200BGI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 119-BGA | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | IDT71V25761 | 119-PBGA (14x22) | 5ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | 200MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1370DV25-250AXC | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | NoBL™ | yes | Obsolete | 3 (168 Hours) | 100 | 20mm | ROHS3 Compliant | PIPELINED ARCHITECTURE | 100-LQFP | unknown | 14mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | 1.6mm | 1 | e3 | MATTE TIN | QUAD | 260 | 2.5V | 40 | 100 | YES | 0.65mm | R-PQFP-G100 | 2.375V | COMMERCIAL | 2.625V | 2.6ns | 18Mb 512K x 36 | Volatile | 2.375V~2.625V | 512KX36 | 36 | 18874368 bit | 250MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
DS1245BL-70IND | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2000 | no | Obsolete | 1 (Unlimited) | 34 | EAR99 | Non-RoHS Compliant | Contains Lead | 34 | 34-LPM | not_compliant | 70GHz | Surface Mount | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 8542.32.00.41 | 1 | e0 | TIN LEAD | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | DS1245BL | YES | 4.75V | SRAMs | Not Qualified | 5V | 5.25V | 1Mb 128K x 8 | Non-Volatile | 0.085mA | 4.75V~5.25V | 128KX8 | 8 | 1048576 bit | 0.005A | 70 ns | NVSRAM | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7016S20J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 1 (Unlimited) | 68 | EAR99 | 70°C | 0°C | 5V | 2 | 24mm | RoHS Compliant | Contains Lead | No | 68 | SEMAPHORE; INTERRUPT FLAG; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | PLCC | Parallel | 5.5V | 4.5V | 144 kb | 24mm | 3.63mm | CMOS | 4.57mm | 1 | 290mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 68 | COMMERCIAL | SRAMs | 5V | 3-STATE | 20 ns | 18kB | RAM, SDR, SRAM | 28b | 16KX9 | Asynchronous | 0.015A | 9b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F2G08ABAGAH4-AAT:G TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tape & Reel (TR) | Active | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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24VL025/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | Tube | 2009 | yes | Active | Not Applicable | 8 | EAR99 | 3.3V | 9.27mm | ROHS3 Compliant | Tin | 8 | 8-DIP (0.300, 7.62mm) | 2-Wire, Serial | 2 kb | 7.62mm | Through Hole | -20°C~85°C TA | CMOS | SYNCHRONOUS | 5.334mm | 1 | 3mA | e3 | DUAL | 1.8V | 24VL025 | 8 | 2.54mm | 1.5V | Not Qualified | 3.6V | 900ns | 2Kb 256 x 8 | Non-Volatile | 1.5V~3.6V | 8 | 400kHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS62WV10248DBLL-55MLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 48 | 48-TFBGA | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 8Mb 1M x 8 | Volatile | 2.4V~3.6V | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29VZZZAC8FQKSL-053 W.G8F TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 26 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant |
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93LC66B-E/ST Microchip Technology
3/5V V Surface Mount 8 Pin Memory IC 93LC66B 4 kb kb 4.4mm mm 2mA mA
Price: 0.0000
RFQ -
71342LA45J Integrated Device Technology (IDT)
5V V Surface Mount 52 Pin Memory IC 32 kb kb 19mm mm 200mA mA 8b b
Price: 0.0000
RFQ -
24LC16BH-E/P Microchip Technology
Through Hole 8 Pin Memory IC 24LC16BH 16 kb kb 9.271mm mm 3mA mA
Price: 0.0000
RFQ -
-
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6116SA25SOG Integrated Device Technology (IDT)
5V V Surface Mount 24 Pin Memory IC 16 kb kb 15.4mm mm 100mA mA 8b b
Price: 4.6324
RFQ -
RD48F3000P0ZTQ0A Micron Technology Inc.
1.81.8/3.3V V StrataFlash™ Memory IC StrataFlash™ Series 48F3000P0
Price: 0.0000
RFQ -
71T75602S166BGG Integrated Device Technology (IDT)
Surface Mount 119 Pin Memory IC 18 Mb kb 14mm mm 245mA mA 36b b
Price: 0.0000
RFQ -
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IS61NLF12836A-7.5TQLI-TR ISSI, Integrated Silicon Solution Inc
Memory IC 4 Mb kb 160mA mA 36b b
Price: 0.0000
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IS61NLP51218A-200TQLI-TR ISSI, Integrated Silicon Solution Inc
Memory IC 9 Mb kb 280mA mA 18b b
Price: 0.0000
RFQ -
24LC16B-E/P Microchip Technology
3/5V V Through Hole 8 Pin Memory IC 24LC16B 16 kb kb 400μm mm 3mA mA
Price: 0.0000
RFQ -
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7006L35G Integrated Device Technology (IDT)
5V V Through Hole 68 Pin Memory IC 128 kb kb 29.46mm mm 210mA mA 8b b
Price: 0.0000
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71V416L12YG Integrated Device Technology (IDT)
Surface Mount 44 Pin Memory IC 4 Mb kb 28.6mm mm 170mA mA 16b b
Price: 0.0000
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CY7C1370DV25-250AXC Rochester Electronics, LLC
NoBL™ 100 Pin Memory IC NoBL™ Series 20mm mm
Price: 0.0000
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7016S20J Integrated Device Technology (IDT)
5V V Surface Mount 68 Pin Memory IC 144 kb kb 24mm mm 290mA mA 9b b
Price: 0.0000
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24VL025/P Microchip Technology
Through Hole 8 Pin Memory IC 24VL025 2 kb kb 9.27mm mm 3mA mA
Price: 0.0000
RFQ -
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