Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | REACH SVHC | Reach Compliance Code | Density | Frequency | Height | Width | Mounting Type | Operating Temperature | Technology | Operating Supply Current | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Data Bus Width | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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24VL025/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | Tube | 2009 | yes | Active | Not Applicable | 8 | EAR99 | 3.3V | 9.27mm | ROHS3 Compliant | Tin | 8 | 8-DIP (0.300, 7.62mm) | 2-Wire, Serial | 2 kb | 7.62mm | Through Hole | -20°C~85°C TA | CMOS | SYNCHRONOUS | 5.334mm | 1 | 3mA | e3 | DUAL | 1.8V | 24VL025 | 8 | 2.54mm | 1.5V | Not Qualified | 3.6V | 900ns | 2Kb 256 x 8 | Non-Volatile | 1.5V~3.6V | 8 | 400kHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "M29W128GL60ZA6E") |
M29W128GL60ZA6E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2013 | yes | Obsolete | 3 (168 Hours) | 64 | 3A991.B.1.A | 13mm | ROHS3 Compliant | No | 64 | 64-TBGA | 128 Mb | 10mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.2mm | 8542.32.00.51 | 1 | e1 | TIN SILVER COPPER | BOTTOM | 260 | 3V | 30 | M29W128 | 64 | YES | 1mm | 3/3.3V | 2.7V | 128Mb 16M x 8 8M x 16 | Non-Volatile | 0.02mA | 2.7V~3.6V | 8KX16 | 16 | 0.0001A | 60 ns | 8 | YES | YES | YES | 128 | 8/16words | YES | YES | FLASH | Parallel | 60ns | 128K | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V35761YSA166BQI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2009 | 3 (168 Hours) | 165 | 3A991.B.2.A | 85°C | -40°C | 15mm | Non-RoHS Compliant | 165 | PIPELINED ARCHITECTURE | Parallel | not_compliant | 166MHz | 13mm | CMOS | SYNCHRONOUS | 1.2mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 165 | INDUSTRIAL | YES | 1mm | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.33mA | 128KX36 | 36 | 4718592 bit | 0.035A | 3.5 ns | COMMON | 3.14V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT28BV64B-20JC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1997 | Obsolete | 2 (1 Year) | Non-RoHS Compliant | 32-LCC (J-Lead) | Surface Mount | 0°C~70°C TC | EEPROM | AT28BV64 | 32-PLCC (13.97x11.43) | 200ns | 64Kb 8K x 8 | Non-Volatile | 2.7V~3.6V | EEPROM | Parallel | 10ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT29F32G08CBCDBJ4-10:D TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | 2016 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 132-VBGA | Surface Mount | 0°C~70°C TA | FLASH - NAND | 32Gb 4G x 8 | Non-Volatile | 2.7V~3.6V | 100MHz | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24LC02BT/ST | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.4mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-TSSOP (0.173, 4.40mm Width) | I2C, Serial | 2 kb | 3mm | Surface Mount | 0°C~70°C TA | CMOS | 1.2mm | 1 | 3mA | e3 | DUAL | 260 | 3V | 40 | 24LC02B | 8 | 0.65mm | 2.5V | 5.5V | 900ns | 2Kb 256 x 8 | Non-Volatile | 2.5V~5.5V | 8 | 400kHz | 5ms | I2C | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MX66L51259FMI-10G | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Tube | Active | Non-RoHS Compliant | Lead Free | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
N25Q032A11EF640F TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2016 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 8-VDFN Exposed Pad | Surface Mount | -40°C~85°C TA | FLASH - NOR | N25Q032 | 32Mb 8M x 4 | Non-Volatile | 1.7V~2V | 108MHz | FLASH | SPI | 8ms, 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29GL128S10DHV020 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | 2017 | GL-S | Active | 3 (168 Hours) | 64 | 9mm | ROHS3 Compliant | 64 | 64-LBGA | 9mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | ASYNCHRONOUS | 1.4mm | 8542.32.00.51 | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3V | NOT SPECIFIED | YES | 1mm | 2.7V | Not Qualified | 3/3.3V | 3.6V | 100ns | 128Mb 8M x 16 | Non-Volatile | 0.06mA | 2.7V~3.6V | 8MX16 | 16 | 134217728 bit | 0.0002A | 3V | YES | YES | YES | 128 | 16words | YES | YES | FLASH | Parallel | 60ns | 64K | BOTTOM/TOP | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42S16100F-7BL-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | RoHS Compliant | 60 | 60-TFBGA | Surface Mount | 0°C~70°C TA | SDRAM | 5.5ns | 16Mb 1M x 16 | Volatile | 3V~3.6V | 16b | 143MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT51K256M32HF-50 N:A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 5 Weeks | Tray | Obsolete | 1 (Unlimited) | 0°C~95°C TC | SGRAM - GDDR5 | 8Gb 256M x 32 | Volatile | 1.3V~1.545V | 1.25GHz | RAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42VS16100C1-10TLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 2 (1 Year) | 50 | EAR99 | 1 | 20.95mm | RoHS Compliant | 50 | AUTO/SELF REFRESH | 50-TSOP (0.400, 10.16mm Width) | Surface Mount | -40°C~85°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 8542.32.00.02 | 1 | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 1.8V | 40 | 50 | YES | 0.8mm | 1.7V | Not Qualified | 1.8V | 1.9V | 3-STATE | 7ns | 16Mb 1M x 16 | Volatile | 0.05mA | 1.7V~1.9V | 1MX16 | 16 | 16b | 100MHz | 0.0003A | COMMON | 2048 | DRAM | Parallel | 1248FP | 1248 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY14B101LA-SP45XIT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | yes | Active | 3 (168 Hours) | 48 | EAR99 | 3V | 15.875mm | ROHS3 Compliant | Lead Free | Gold, Tin | 48 | 48-BSSOP (0.295, 7.50mm Width) | 1 Mb | Surface Mount | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 2.794mm | 8542.32.00.41 | 1 | 52mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 3V | 30 | CY14B101 | 48 | 0.635mm | 2.7V | SRAMs | Not Qualified | 3.6V | 1Mb 128K x 8 | Non-Volatile | 2.7V~3.6V | 128KX8 | 8 | 8b | 0.005A | 45 ns | 8b | NVSRAM | Parallel | 45ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61WV25616EDALL-20BLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 48 | 8mm | ROHS3 Compliant | 48-TFBGA | 6mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 0.75mm | R-PBGA-B48 | 1.65V | 2.2V | 4Mb 256K x 16 | Volatile | 1.65V~2.2V | 256KX16 | 16 | 4194304 bit | 20 ns | SRAM | Parallel | 20ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MX25U12835FZNI-08G | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 3 (168 Hours) | 8 | 85°C | -40°C | 6mm | RoHS Compliant | ALSO CONFIGURABLE AS 128M X 1 | SPI, Serial | unknown | 133MHz | 5mm | CMOS | SYNCHRONOUS | 0.8mm | 1 | e3 | Matte Tin (Sn) | DUAL | NO LEAD | 260 | 1.8V | 40 | INDUSTRIAL | YES | 1.27mm | R-PDSO-N8 | 1.65V | Flash Memories | Not Qualified | 1.8V | 2V | FLASH, NOR | 0.027mA | 32MX4 | 4 | 134217728 bit | 0.00002A | 2 | 10 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 1.8V | SPI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MX25U12832FM2I02 | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tube | MXSMIO™ | Active | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 128Mb 16M x 8 | Non-Volatile | 1.65V~2V | 133MHz | FLASH | SPI - Quad I/O, QPI | 40μs, 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT25320T1-10TC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2001 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 14-TSSOP (0.173, 4.40mm Width) | Surface Mount | 0°C~70°C TA | EEPROM | AT25320 | 14-TSSOP | 32Kb 4K x 8 | Non-Volatile | 4.5V~5.5V | 3MHz | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
GD25LQ40COIGR | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 8-TSSOP (0.173, 4.40mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 4Mb 512K x 8 | Non-Volatile | 1.65V~2.1V | 104MHz | FLASH | SPI - Quad I/O | 50μs, 2.4ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
GD25VQ40CEIGR | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 8-XFDFN Exposed Pad | Surface Mount | -40°C~85°C TA | FLASH - NOR | 4Mb 512K x 8 | Non-Volatile | 2.3V~3.6V | 104MHz | FLASH | SPI - Quad I/O | 50μs, 3ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
24FC64FT-I/ST | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | Active | 1 (Unlimited) | 8 | 4.4mm | ROHS3 Compliant | Tin | 8 | 8-TSSOP (0.173, 4.40mm Width) | I2C, Serial | 64 kb | 3mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.2mm | 1 | e3 | DUAL | 260 | 40 | 24FC64F | 0.65mm | 1.7V | Not Qualified | 2/5V | 5.5V | 400ns | 64Kb 8K x 8 | Non-Volatile | 0.003mA | 1.7V~5.5V | 8 | 1MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT25TL512HBA8E12-0AAT TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 5 Weeks | Tape & Reel (TR) | Automotive, AEC-Q100 | Active | 3 (168 Hours) | ROHS3 Compliant | 24-TBGA | Surface Mount | -40°C~105°C TA | FLASH - NOR | 512Mb 64M x 8 | Non-Volatile | 2.7V~3.6V | 133MHz | FLASH | SPI | 8ms, 2.8ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
GD25Q16CWIGR | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 8-WDFN Exposed Pad | Surface Mount | -40°C~85°C TA | FLASH - NOR | 16Mb 2M x 8 | Non-Volatile | 2.7V~3.6V | 120MHz | FLASH | SPI - Quad I/O | 50μs, 2.4ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43R32800D-6BL-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 144 | ROHS3 Compliant | 144 | 144-LFBGA | Surface Mount | 0°C~70°C TA | SDRAM - DDR | 430mA | BOTTOM | 2.5V | YES | 0.8mm | Not Qualified | 2.5V | 3-STATE | 700ps | 256Mb 8M x 32 | Volatile | 2.3V~2.7V | 8MX32 | 32 | 268435456 bit | 32b | 166MHz | 0.005A | COMMON | 4096 | DRAM | Parallel | 15ns | 248 | 248 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42S32160F-75ETLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tube | Active | 3 (168 Hours) | 86 | 1 | 22.22mm | ROHS3 Compliant | 86 | AUTO/SELF REFRESH | 86-TFSOP (0.400, 10.16mm Width) | 10.16mm | Surface Mount | -40°C~85°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 1 | DUAL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | YES | 0.5mm | 3V | 3.6V | 6ns | 512Mb 16M x 32 | Volatile | 3V~3.6V | 16MX32 | 32 | 536870912 bit | 133MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
GD25LQ256DYIGR | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 8-WDFN Exposed Pad | Surface Mount | -40°C~85°C TA | FLASH - NOR | 256Mb 32M x 8 | Non-Volatile | 1.65V~2V | 120MHz | FLASH | SPI - Quad I/O | 2.4ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IS64LV25616AL-12BLA3 | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tray | yes | Active | 2 (1 Year) | 48 | 3A991.B.2.A | 10mm | Non-RoHS Compliant | 48-TFBGA | 8mm | Surface Mount | -40°C~125°C TA | SRAM - Asynchronous | 1.2mm | 8542.32.00.41 | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3.3V | 40 | 48 | YES | 0.75mm | R-PBGA-B48 | 3.135V | Not Qualified | 3.3V | 3.63V | 3-STATE | AEC-Q100 | 4Mb 256K x 16 | Volatile | 0.12mA | 3.135V~3.6V | 256KX16 | 16 | 4194304 bit | 0.02A | 12 ns | COMMON | 2V | SRAM | Parallel | 12ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
GD25VQ20CTIG | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tube | Active | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 2Mb 256K x 8 | Non-Volatile | 2.3V~3.6V | 104MHz | FLASH | SPI - Quad I/O | 50μs, 3ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT28C64X-25SC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1999 | Obsolete | 2 (1 Year) | Non-RoHS Compliant | 28-SOIC (0.295, 7.50mm Width) | Surface Mount | 0°C~70°C TC | EEPROM | AT28C64 | 28-SOIC | 250ns | 64Kb 8K x 8 | Non-Volatile | 4.5V~5.5V | EEPROM | Parallel | 1ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT27C020-70PC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2000 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 32-DIP (0.600, 15.24mm) | Through Hole | 0°C~70°C TC | EPROM - OTP | AT27C020 | 32-PDIP | 70ns | 2Mb 256K x 8 | Non-Volatile | 4.5V~5.5V | EPROM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS1345YP-100+ | Maxim Integrated | 23.5108 |
Min: 1 Mult: 1 |
0.00000000 | download | 15 Weeks | Surface Mount | Tray | 2010 | yes | Active | 3 (168 Hours) | 34 | 3A991.B.2.A | 5V | 23.5mm | ROHS3 Compliant | Lead Free | Tin | No | 34 | 10 YEAR DATA RETENTION | 34-PowerCap™ Module | Unknown | 1 Mb | 100GHz | 2.03mm | 25.02mm | Surface Mount | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | 85mA | 8473.30.11.40 | 1 | e3 | DUAL | 245 | 5V | 40 | DS1345Y | 34 | SRAMs | 5V | 1Mb 128K x 8 | Non-Volatile | 8b | 4.5V~5.5V | 128KX8 | 8b | 0.00015A | 100 ns | NVSRAM | Parallel | 100ns |
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24VL025/P Microchip Technology
Through Hole 8 Pin Memory IC 24VL025 2 kb kb 9.27mm mm 3mA mA
Price: 0.0000
RFQ -
M29W128GL60ZA6E Micron Technology Inc.
3/3.3V V 64 Pin Memory IC M29W128 128 Mb kb 13mm mm
Price: 0.0000
RFQ -
IDT71V35761YSA166BQI Integrated Device Technology (IDT)
3.3V V 165 Pin Memory IC 15mm mm
Price: 0.0000
RFQ -
-
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24LC02BT/ST Microchip Technology
Surface Mount 8 Pin Memory IC 24LC02B 2 kb kb 4.4mm mm 3mA mA
Price: 0.0000
RFQ -
-
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S29GL128S10DHV020 Cypress Semiconductor Corp
3/3.3V V GL-S Memory IC GL-S Series 9mm mm
Price: 0.0000
RFQ -
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IS42VS16100C1-10TLI ISSI, Integrated Silicon Solution Inc
1.8V V 50 Pin Memory IC 20.95mm mm
Price: 0.0000
RFQ -
CY14B101LA-SP45XIT Cypress Semiconductor Corp
Surface Mount 48 Pin Memory IC CY14B101 1 Mb kb 15.875mm mm 52mA mA 8b b
Price: 0.0000
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24FC64FT-I/ST Microchip Technology
2/5V V Surface Mount Memory IC 24FC64F 64 kb kb 4.4mm mm
Price: 0.0000
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MT25TL512HBA8E12-0AAT TR Micron Technology Inc.
Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
Price: 0.0000
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IS64LV25616AL-12BLA3 ISSI, Integrated Silicon Solution Inc
3.3V V 48 Pin Memory IC 10mm mm
Price: 0.0000
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DS1345YP-100+ Maxim Integrated
5V V Surface Mount 34 Pin Memory IC DS1345Y 1 Mb kb 23.5mm mm
Price: 23.5108
RFQ
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