Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Page Size | Serial Bus Type | I2C Control Byte | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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S25FS128SAGMFI103 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 16 Weeks | Tape & Reel (TR) | 2016 | FS-S | Active | 3 (168 Hours) | 8 | 1.8V | 5.283mm | ROHS3 Compliant | No | 8-SOIC (0.209, 5.30mm Width) | SPI, Serial | 128 Mb | 5.283mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | 2.159mm | 8542.32.00.51 | 1 | DUAL | 1.8V | YES | 1.27mm | S-PDSO-G8 | 1.7V | 2V | 128Mb 16M x 8 | Non-Volatile | 1.7V~2V | 32MX4 | 4 | 133MHz | 2 | FLASH | SPI - Quad I/O, QPI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61LF12836EC-6.5TQLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | Active | 3 (168 Hours) | 100 | 3A991.B.2.A | 3.3V | 4 | 20mm | ROHS3 Compliant | 100 | 100-LQFP | 4 Mb | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 1.6mm | 1 | 190mA | e3 | Matte Tin (Sn) | QUAD | 260 | 3.3V | 10 | 100 | YES | 0.65mm | 3.135V | Not Qualified | 3-STATE | 6.5ns | 4.5Mb 128K x 36 | Volatile | 17b | 3.135V~3.465V | 128KX36 | 36 | Synchronous | 133MHz | 0.085A | 36b | COMMON | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
24LC00/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | Tube | yes | Active | 1 (Unlimited) | 8 | EAR99 | 2.5V | 9.46mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 8-DIP (0.300, 7.62mm) | 2-Wire, I2C, Serial | No SVHC | 128 b | 7.62mm | Through Hole | 0°C~70°C TA | CMOS | 4.32mm | 1 | 3mA | e3 | DUAL | 4.5V | 24LC00 | 8 | 2.54mm | 3/5V | 5.5V | 3500ns | 128b 16 x 8 | Non-Volatile | 2.5V~5.5V | 8 | 400kHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | 4ms | I2C | 1010XXXR | EEPROM | I2C | 4ms | ||||||||||||||||||||||||||||||||||||||||||
.png "EDFA112A2PD-JD-F-D") |
EDFA112A2PD-JD-F-D | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | ROHS3 Compliant | -30°C~85°C TC | SDRAM - Mobile LPDDR3 | 16Gb 128M x 128 | Volatile | 1.14V~1.95V | 933MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BQ2022DBZRG4 | Texas Instruments | 0.3108 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | no | Obsolete | 1 (Unlimited) | 3 | EAR99 | 2.92mm | ROHS3 Compliant | Contains Lead | No | 3 | TO-236-3, SC-59, SOT-23-3 | Serial | 1 kb | Surface Mount | -40°C~85°C TA | EPROM - OTP | 1.12mm | 1 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 2.7V | BQ2022 | 3 | YES | 0.95mm | 2.65V | OTP ROMs | 5.5V | OPEN-DRAIN | 1Kb 256b x 4 pages | Non-Volatile | 0.00002mA | 2.65V~5.5V | 1KX1 | 1 | 0.01667MHz | COMMON | EPROM | Single Wire | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT28C16E-20PI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2000 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 24-DIP (0.600, 15.24mm) | Through Hole | -40°C~85°C TC | EEPROM | AT28C16 | 24-PDIP | 200ns | 16Kb 2K x 8 | Non-Volatile | 4.5V~5.5V | EEPROM | Parallel | 200μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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M50FLW080BN5G | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | 2006 | Obsolete | 3 (168 Hours) | 85°C | -20°C | ROHS3 Compliant | 40-TFSOP (0.724, 18.40mm Width) | Parallel | 33MHz | Surface Mount | -20°C~85°C TA | FLASH - NOR | M50FLW080 | 40-TSOP (10x20) | 250ns | 8Mb 1M x 8 | Non-Volatile | 3V~3.6V | 33MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT49BV001-12JC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1997 | Obsolete | 2 (1 Year) | Non-RoHS Compliant | 32-LCC (J-Lead) | Surface Mount | 0°C~70°C TC | AT49BV001 | 120ns | 1Mb 128K x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 50μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS7C31024B-15TJCNTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | 2002 | yes | Active | 3 (168 Hours) | 32 | 20.955mm | ROHS3 Compliant | 32 | 32-BSOJ (0.300, 7.62mm Width) | 7.62mm | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | 3.683mm | 1 | e3/e6 | PURE MATTE TIN/TIN BISMUTH | DUAL | 245 | 3.3V | 40 | 32 | YES | 1.27mm | 3V | 3.6V | 1Mb 128K x 8 | Volatile | 3V~3.6V | 128KX8 | 8 | 1048576 bit | 15 ns | SRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
EDFP112A3PB-GD-F-R TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | -30°C~85°C TA | SDRAM - Mobile LPDDR3 | 24Gb 192M x 128 | Volatile | 1.14V~1.95V | 800MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS29GL01GS-11DHB01 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | GL-S | Active | 3 (168 Hours) | ROHS3 Compliant | 64-LBGA | Surface Mount | -40°C~85°C TA | FLASH - NOR | 110ns | 1Gb 128M x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 60ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7133LA25JI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 68-LCC (J-Lead) | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | IDT7133 | 32Kb 2K x 16 | Volatile | 4.5V~5.5V | SRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT53D384M32D2DS-053 AAT:C | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 200-WFBGA | Surface Mount | -40°C~105°C TA | SDRAM - Mobile LPDDR4 | 12Gb 384M x 32 | Volatile | 1.1V | 1866MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MTFC8GAMALNA-AAT ES TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | e•MMC™ | Obsolete | 1 (Unlimited) | 100-TBGA | Surface Mount | -40°C~105°C TA | FLASH - NAND | 64Gb 8G x 8 | Non-Volatile | FLASH | MMC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT25DF641-MWH-T | Adesto Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tape & Reel (TR) | 2010 | Obsolete | 3 (168 Hours) | 8 | 3A991.B.1.A | 3.3V | RoHS Compliant | No | 8 | 8-VDFN Exposed Pad | SPI, Serial | 64 Mb | Surface Mount | -40°C~85°C TC | CMOS | 1mm | 1 | 19mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 3V | 8 | 1.27mm | 2.7V | 3.6V | 5 ns | 64Mb 256Bytes x 32K pages | Non-Volatile | 1b | 2.7V~3.6V | 8 | Synchronous | 8b | 100MHz | 5ms | 2.7V | 256B | FLASH | SPI | 7μs, 3ms | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1243KV18-450BZC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Surface Mount | Tray | 2003 | Active | 3 (168 Hours) | 165 | 1.8V | 2 | 15mm | Non-RoHS Compliant | 165 | PIPELINED ARCHITECTURE | 165-LBGA | not_compliant | 36 Mb | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QDR II+ | 1.4mm | 1 | 720mA | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 220 | 1.8V | 30 | CY7C1243 | 165 | 1mm | 1.7V | Not Qualified | 1.9V | 3-STATE | 450 ps | 36Mb 2M x 18 | Volatile | 19b | 1.7V~1.9V | 18 | Synchronous | 450MHz | 0.33A | 18b | SEPARATE | 1.7V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||
|
7006L20JGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | 2009 | yes | Active | 3 (168 Hours) | 68 | EAR99 | 85°C | -40°C | 5V | 2 | 24mm | RoHS Compliant | Lead Free | No | 68 | PLCC | Parallel | 5.5V | 4.5V | 128 kb | 24mm | 3.63mm | CMOS | 1 | e3 | Matte Tin (Sn) | QUAD | J BEND | 260 | 5V | 68 | INDUSTRIAL | YES | 20 ns | 16kB | RAM, SDR, SRAM | 28b | 16KX8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V25761S166PFGI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tube | Active | 3 (168 Hours) | ROHS3 Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | IDT71V25761 | 3.5ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | 166MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CAT28C256L12 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2007 | Obsolete | 1 (Unlimited) | 28 | EAR99 | 5V | 36.695mm | RoHS Compliant | Lead Free | 28 | 28-DIP (0.600, 15.24mm) | 256 kb | 15.24mm | Through Hole | 0°C~70°C TA | CMOS | ASYNCHRONOUS | 5.08mm | 8542.32.00.51 | 1 | 30mA | e3 | Tin (Sn) | DUAL | 260 | 5V | 40 | CAT28C256 | 28 | 2.54mm | Not Qualified | 5V | 120ns | 256Kb 32K x 8 | Non-Volatile | 4.5V~5.5V | 32KX8 | 8 | 0.00015A | 100000 Write/Erase Cycles | 5ms | 5V | YES | YES | NO | 64words | EEPROM | Parallel | 5ms | |||||||||||||||||||||||||||||||||||||||||
 |
AT93C56AW-10SI-1.8 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C TA | EEPROM | AT93C56A | 8-SOIC | 2Kb 256 x 8 128 x 16 | Non-Volatile | 1.8V~5.5V | 2MHz | EEPROM | SPI | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS66WV51216DBLL-70TLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Discontinued | 3 (168 Hours) | 44 | 3.3V | 1 | ROHS3 Compliant | Lead Free | No | 44 | 44-TSOP (0.400, 10.16mm Width) | 8 Mb | Surface Mount | -40°C~85°C TA | PSRAM (Pseudo SRAM) | 1 | DUAL | 3V | 44 | YES | 0.8mm | 2.5V | Other Memory ICs | 3.6V | 3-STATE | 8Mb 512K x 16 | Volatile | 19b | 0.028mA | 2.5V~3.6V | 16 | 70 ns | COMMON | PSRAM | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7134SA55JG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2013 | yes | Active | 1 (Unlimited) | 52 | EAR99 | 70°C | 0°C | 5V | 2 | 19mm | RoHS Compliant | Lead Free | No | 52 | AUTOMATIC POWER-DOWN | PLCC | Parallel | 5.5V | 4.5V | 32 kb | 19mm | 3.63mm | CMOS | 4.57mm | 1 | 240mA | e3 | Matte Tin (Sn) - annealed | QUAD | J BEND | 260 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 3-STATE | 55 ns | 4kB | RAM, SDR, SRAM | 24b | 4KX8 | Asynchronous | 0.015A | 8b | COMMON | |||||||||||||||||||||||||||||||||||||||||||
 |
R1LP0408CSP-5SI#B0 | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 32-SOIC (0.450, 11.40mm Width) | Surface Mount | -40°C~85°C TA | SRAM | 32-SOP | 55ns | 4Mb 512K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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751205-0010 01 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SM668PX4-AC | Silicon Motion, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AS7C31024B-10TJCNTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | 2002 | yes | Active | 3 (168 Hours) | 32 | 20.955mm | ROHS3 Compliant | 32 | 32-BSOJ (0.300, 7.62mm Width) | 7.62mm | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | 3.683mm | 1 | e3/e6 | PURE MATTE TIN/TIN BISMUTH | DUAL | 245 | 3.3V | 40 | 32 | YES | 1.27mm | 3V | 3.6V | 1Mb 128K x 8 | Volatile | 3V~3.6V | 128KX8 | 8 | 1048576 bit | 10 ns | SRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT27C1024-12JC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1998 | Obsolete | 2 (1 Year) | Non-RoHS Compliant | 44-LCC (J-Lead) | Surface Mount | 0°C~70°C TC | EPROM - OTP | AT27C1024 | 120ns | 1Mb 64K x 16 | Non-Volatile | 4.5V~5.5V | EPROM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT49F1024-90VC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2016 | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 40-TFSOP (0.488, 12.40mm Width) | Surface Mount | 0°C~70°C TC | FLASH | AT49F1024 | 40-VSOP | 90ns | 1Mb 64K x 16 | Non-Volatile | 4.5V~5.5V | FLASH | Parallel | 50μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V35761SA200BQ | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2009 | 3 (168 Hours) | 165 | 3A991.B.2.A | 70°C | 0°C | 15mm | Non-RoHS Compliant | 165 | PIPELINED ARCHITECTURE | Parallel | not_compliant | 200MHz | 13mm | CMOS | SYNCHRONOUS | 1.2mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 165 | COMMERCIAL | YES | 1mm | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.36mA | 128KX36 | 36 | 4718592 bit | 0.03A | 3.1 ns | COMMON | 3.14V | |||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1371KV33-133AXC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tray | 2004 | NoBL™ | Active | 3 (168 Hours) | 100 | 3A991.B.2.B | 20mm | ROHS3 Compliant | 100-LQFP | 14mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | 1.6mm | 8542.32.00.41 | 1 | e3 | MATTE TIN | QUAD | 260 | 3.3V | 30 | YES | 0.65mm | R-PQFP-G100 | 3.135V | 3.6V | 6.5ns | 18Mb 512K x 36 | Volatile | 3.135V~3.6V | 512KX36 | 36 | 18874368 bit | 133MHz | SRAM | Parallel |
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S25FS128SAGMFI103 Cypress Semiconductor Corp
FS-S Memory IC FS-S Series 128 Mb kb 5.283mm mm
Price: 0.0000
RFQ -
IS61LF12836EC-6.5TQLI ISSI, Integrated Silicon Solution Inc
100 Pin Memory IC 4 Mb kb 20mm mm 190mA mA 36b b
Price: 0.0000
RFQ -
24LC00/P Microchip Technology
3/5V V Through Hole 8 Pin Memory IC 24LC00 128 b kb 9.46mm mm 3mA mA
Price: 0.0000
RFQ -
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AT25DF641-MWH-T Adesto Technologies
Surface Mount 8 Pin Memory IC 64 Mb kb 19mA mA
Price: 0.0000
RFQ -
CY7C1243KV18-450BZC Cypress Semiconductor Corp
Surface Mount 165 Pin Memory IC CY7C1243 36 Mb kb 15mm mm 720mA mA 18b b
Price: 0.0000
RFQ -
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CAT28C256L12 ON Semiconductor
5V V Through Hole 28 Pin Memory IC CAT28C256 256 kb kb 36.695mm mm 30mA mA
Price: 0.0000
RFQ -
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IS66WV51216DBLL-70TLI ISSI, Integrated Silicon Solution Inc
44 Pin Memory IC 8 Mb kb
Price: 0.0000
RFQ -
7134SA55JG8 Integrated Device Technology (IDT)
5V V Surface Mount 52 Pin Memory IC 32 kb kb 19mm mm 240mA mA 8b b
Price: 0.0000
RFQ -
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IDT71V35761SA200BQ Integrated Device Technology (IDT)
3.3V V 165 Pin Memory IC 15mm mm
Price: 0.0000
RFQ -
CY7C1371KV33-133AXC Cypress Semiconductor Corp
NoBL™ Memory IC NoBL™ Series 20mm mm
Price: 0.0000
RFQ
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