Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Weight | Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Output Enable | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Serial Bus Type | I2C Control Byte | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sequential Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
70T3519S133BFI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 208 | 85°C | -40°C | 2.5V | 2 | 15mm | RoHS Compliant | Contains Lead | No | 208 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | Parallel | 2.6V | 2.4V | 9 Mb | 133MHz | 15mm | 1.4mm | CMOS | 1 | 450mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 2.5V | 208 | INDUSTRIAL | 0.8mm | SRAMs | 3-STATE | 4.2 ns | 133MHz | 1.1MB | RAM, SDR, SRAM | 36b | Synchronous | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS62WV6416DBLL-45BLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | yes | Active | 3 (168 Hours) | 48 | EAR99 | 1 | 8mm | ROHS3 Compliant | No | 48 | 48-TFBGA | 1 Mb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1 | 8mA | e1 | TIN SILVER COPPER | BOTTOM | 260 | 3.3V | 40 | 48 | YES | 0.75mm | 2.3V | 2.5/3.3V | 3.6V | 3-STATE | 1Mb 64K x 16 | Volatile | 16b | 2.3V~3.6V | 16 | Asynchronous | 0.000004A | 45 ns | 16b | COMMON | SRAM | Parallel | 45ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71T75802S100BGI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Tray | Active | 3 (168 Hours) | Non-RoHS Compliant | 119-BGA | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71T75 | 119-PBGA (14x22) | 5ns | 18Mb 1M x 18 | Volatile | 2.375V~2.625V | 100MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V67803S150BQ8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 165 | 70°C | 0°C | 3.3V | 1 | 15mm | RoHS Compliant | Contains Lead | No | 165 | PIPELINED ARCHITECTURE | Parallel | 3.465V | 3.135V | 9 Mb | 150MHz | 13mm | 1.2mm | CMOS | 1 | 305mA | e0 | TIN LEAD | BOTTOM | BALL | 225 | 3.3V | 20 | 165 | COMMERCIAL | SRAMs | 3-STATE | 3.8 ns | 150MHz | 1.1MB | RAM, SDR, SRAM | 19b | Synchronous | 0.05A | 18b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71T75602S133BGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | 2012 | no | Active | 3 (168 Hours) | 119 | 85°C | -40°C | 2.5V | 1 | 14mm | RoHS Compliant | Contains Lead | No | 119 | PIPELINED ARCHITECTURE | BGA | Parallel | 2.625V | 2.375V | 18 Mb | 133MHz | 22mm | 2.15mm | CMOS | 2.36mm | 1 | 215mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 2.5V | 119 | INDUSTRIAL | SRAMs | 3-STATE | 4.2 ns | 133MHz | 2.3MB | RAM, SDR, SRAM | 19b | Synchronous | 0.06A | 36b | COMMON | 2.38V | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V416YL12PHI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2008 | no | 3 (168 Hours) | 44 | 3A991.B.2.A | 85°C | -40°C | 18.41mm | Non-RoHS Compliant | TSOP | Parallel | not_compliant | 10.16mm | CMOS | 1.2mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | DUAL | GULL WING | 225 | 3.3V | 20 | 44 | INDUSTRIAL | YES | 0.8mm | R-PDSO-G44 | 3V | SRAMs | Not Qualified | 3.3V | 3.6V | 3-STATE | RAM, SRAM - Asynchronous | 0.17mA | 256KX16 | 16 | 4194304 bit | 0.01A | 12 ns | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V3556SA150BQ8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | Non-RoHS Compliant | 165-TBGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V3556 | 3.8ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | 150MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "MT53D512M32D2NP-053 WT ES:D TR") |
MT53D512M32D2NP-053 WT ES:D TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 200-WFBGA | Surface Mount | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 200-WFBGA (10x14.5) | 16Gb 512M x 32 | Volatile | 1.1V | 1866MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S99-50352 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V65803S150PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2015 | 3 (168 Hours) | 100 | 3A991.B.2.A | 70°C | 0°C | 20mm | Non-RoHS Compliant | PIPELINED ARCHITECTURE | LQFP | Parallel | not_compliant | 150MHz | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | YES | 0.65mm | R-PQFP-G100 | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.325mA | 512KX18 | 18 | 9437184 bit | 0.04A | 3.8 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS49NLC36800-33BL | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | 144 | EAR99 | 1 | 18.5mm | ROHS3 Compliant | 144 | AUTO REFRESH | 144-TFBGA | Surface Mount | 0°C~70°C TA | CMOS | SYNCHRONOUS | 1.2mm | 8542.32.00.28 | 1 | 300MHz | BOTTOM | 1.8V | 144 | YES | 1mm | 1.7V | Not Qualified | 1.5/1.81.82.5V | 1.9V | 3-STATE | 20ns | 288Mb 8M x 36 | Volatile | 0.914mA | 1.7V~1.9V | 8MX36 | 36 | 301989888 bit | 36b | COMMON | DRAM | Parallel | 248 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
FM22LD16-55-BGTR | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 9 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | F-RAM™ | Active | 3 (168 Hours) | 48 | EAR99 | 3.3V | 8mm | ROHS3 Compliant | 48 | 48-TFBGA | 4 Mb | Surface Mount | -40°C~85°C TA | FRAM (Ferroelectric RAM) | ASYNCHRONOUS | 1.2mm | 8542.32.00.71 | 1 | 12mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3.3V | NOT SPECIFIED | FM22LD16 | 48 | 0.75mm | 2.7V | SRAMs | Not Qualified | 3.6V | 4Mb 256K x 16 | Non-Volatile | 2.7V~3.6V | 256KX16 | 16 | 16b | 0.00015A | 55 ns | 16b | FRAM | Parallel | 110ns | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71T75702S80BG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2005 | 3 (168 Hours) | 119 | 3A991.B.2.A | 70°C | 0°C | 22mm | Non-RoHS Compliant | FLOW-THROUGH ARCHITECTURE | BGA | Parallel | not_compliant | 14mm | CMOS | SYNCHRONOUS | 2.36mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | NOT SPECIFIED | 2.5V | NOT SPECIFIED | 119 | COMMERCIAL | YES | 1.27mm | 2.375V | SRAMs | Not Qualified | 2.5V | 2.625V | 3-STATE | RAM, SRAM | 0.25mA | 512KX36 | 36 | 18874368 bit | 95MHz | 0.04A | 8 ns | COMMON | 2.38V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71P73604S250BQ8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2005 | 3 (168 Hours) | 165 | 70°C | 0°C | Non-RoHS Compliant | 165 | Parallel | not_compliant | 250MHz | CMOS | SYNCHRONOUS | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | YES | 1mm | SRAMs | Not Qualified | 1.5/1.81.8V | 3-STATE | DDR2, RAM, SRAM | 0.8mA | 512KX36 | 36 | 18874368 bit | 0.325A | 0.45 ns | COMMON | 1.7V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
R1EX25004ATA00I#S0 | Renesas Electronics America | 1.1500 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Tape & Reel (TR) | 2017 | yes | Active | 1 (Unlimited) | 8 | 4.4mm | ROHS3 Compliant | 8 | 8-TSSOP (0.173, 4.40mm Width) | SPI, Serial | 3mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.1mm | 1 | DUAL | 3.6V | R1EX25004 | 8 | YES | 0.65mm | 2.5V | 5.5V | 4Kb 512 x 8 | Non-Volatile | 1.8V~5.5V | 8 | 4096 bit | 5MHz | 5ms | SPI | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MB85R1001ANC-GE1 | Fujitsu Electronics America, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tray | 2012 | Active | 1 (Unlimited) | 85°C | -40°C | RoHS Compliant | Lead Free | 48 | 48-TFSOP (0.488, 12.40mm Width) | Parallel | 3.6V | Unknown | 3V | Surface Mount | -40°C~85°C TA | FRAM (Ferroelectric RAM) | 48-TSOP | 150ns | 1Mb 128K x 8 | Non-Volatile | 3V~3.6V | FRAM | Parallel | 150ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CAT28LV64LI20 | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 28-DIP (0.600, 15.24mm) | Through Hole | -40°C~85°C TA | EEPROM | 28-PDIP | 200ns | 64Kb 8K x 8 | Non-Volatile | 3V~3.6V | EEPROM | Parallel | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT7164L20Y8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2009 | 3 (168 Hours) | 28 | EAR99 | 70°C | 0°C | 1 | 17.9324mm | Non-RoHS Compliant | 28 | Parallel | not_compliant | 7.5184mm | CMOS | 3.556mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | DUAL | J BEND | 225 | 5V | 30 | 28 | COMMERCIAL | YES | 1.27mm | 4.5V | SRAMs | Not Qualified | 5V | 5.5V | 3-STATE | RAM, SRAM - Asynchronous | 0.15mA | 8KX8 | 8 | 65536 bit | 0.00006A | 19 ns | YES | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IS43DR16320E-25DBLI-TR | ISSI, Integrated Silicon Solution Inc | 4.5473 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 84 | 1 | 12.5mm | ROHS3 Compliant | AUTO/SELF REFRESH | 84-TFBGA | 8mm | Surface Mount | -40°C~85°C TA | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B84 | 1.7V | 1.9V | 400ns | 512Mb 32M x 16 | Volatile | 1.7V~1.9V | 32MX16 | 16 | 536870912 bit | 400MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS1230AB-200IND | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2002 | Obsolete | 1 (Unlimited) | 28 | EAR99 | 5V | Non-RoHS Compliant | Contains Lead | No | 28 | 28-DIP Module (0.600, 15.24mm) | 256 kb | 200GHz | Through Hole | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn/Pb) | DUAL | 5V | DS1230AB | 28 | NO | 2.54mm | SRAMs | 5V | 256Kb 32K x 8 | Non-Volatile | 0.085mA | 4.75V~5.25V | 32KX8 | 8 | 8b | 0.005A | 200 ns | NVSRAM | Parallel | 200ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS2505+ | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Through Hole | Bulk | 2003 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 3 | MICROLAN COMPATIBLE | TO-226-3, TO-92-3 (TO-226AA) | Serial | 6V | No SVHC | 2.8V | 16 kb | 4.95mm | Through Hole | 453.59237mg | -40°C~85°C TA | EPROM - OTP | 5μA | 1 | e3 | BOTTOM | 260 | 5V | 30 | DS2505 | 3 | 2.54mm | Other Memory ICs | 15μs | 16Kb 16K x 1 | Non-Volatile | 16KX1 | 1 | COMMON | EPROM | 1-Wire® | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61VPS102418B-250TQL-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | 2.6ns | 18Mb 1M x 18 | Volatile | 2.375V~2.625V | 250MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V659S10BF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 208 | 70°C | 0°C | 3.3V | 2 | 15mm | RoHS Compliant | Contains Lead | No | 208 | Parallel | 3.45V | 3.15V | 4.5 Mb | 15mm | 1.4mm | CMOS | 1 | 500mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 208 | COMMERCIAL | 0.8mm | SRAMs | 3-STATE | 10 ns | 512kB | RAM, SDR, SRAM | 34b | Asynchronous | 0.015A | 36b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IS25LP128F-JBLA3 | ISSI, Integrated Silicon Solution Inc | 2.4614 |
Min: 1 Mult: 1 |
0.00000000 | 2 Weeks | Tray | Automotive, AEC-Q100 | Active | 3 (168 Hours) | 8 | 5.28mm | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | 5.28mm | Surface Mount | -40°C~125°C TA | FLASH - NOR | SYNCHRONOUS | 2.16mm | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1.27mm | S-PDSO-G8 | 2.3V | 3.6V | 128Mb 16M x 8 | Non-Volatile | 2.3V~3.6V | 16MX8 | 8 | 134217728 bit | SERIAL | 166MHz | 1 | 3V | FLASH | SPI - Quad I/O, QPI, DTR | 800μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71321LA35PF8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 64-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT71321 | 64-TQFP (14x14) | 35ns | 16Kb 2K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 35ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR24L64F-WE2 | ROHM Semiconductor | 0.0914 |
Min: 1 Mult: 1 |
0.00000000 | 11 Weeks | Tape & Reel (TR) | 2009 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | 8-SOIC (0.173, 4.40mm Width) | 4.4mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.78mm | 8542.32.00.51 | 1 | e2 | Tin/Copper (Sn/Cu) | DUAL | 260 | 2.5V | 10 | BR24L64 | 8 | YES | 1.27mm | R-PDSO-G8 | 1.8V | Not Qualified | 2/5V | 5.5V | 64Kb 8K x 8 | Non-Volatile | 0.003mA | 1.8V~5.5V | 8KX8 | 8 | 65536 bit | SERIAL | 400kHz | 0.000002A | 40 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||
 |
MR0A16AYS35R | NXP USA Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | 2015 | Discontinued | 1 (Unlimited) | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | Surface Mount | 0°C~70°C TA | MRAM (Magnetoresistive RAM) | MR0A16A | 44-TSOP II | 35ns | 1Mb 64K x 16 | Non-Volatile | 3V~3.6V | RAM | Parallel | 35ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IS62WV51216EFBLL-45TLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 45ns | 8Mb 512K x 16 | Volatile | 2.2V~3.6V | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1313KV18-250BZI | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 165-LBGA | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, QDR II | 165-FBGA (13x15) | 18Mb 1M x 18 | Volatile | 1.7V~1.9V | 250MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
FT24C02A-KSR-T | Fremont Micro Devices Ltd | 0.0290 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Cut Tape (CT) | Active | 1 (Unlimited) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C | 550ns | 2Kb 256 x 8 | Non-Volatile | 1.8V~5.5V | 1MHz | EEPROM | I2C | 5ms |
-
70T3519S133BFI Integrated Device Technology (IDT)
Surface Mount 208 Pin Memory IC 9 Mb kb 15mm mm 450mA mA 36b b
Price: 0.0000
RFQ -
IS62WV6416DBLL-45BLI ISSI, Integrated Silicon Solution Inc
2.5/3.3V V 48 Pin Memory IC 1 Mb kb 8mm mm 8mA mA 16b b
Price: 0.0000
RFQ -
-
71V67803S150BQ8 Integrated Device Technology (IDT)
Surface Mount 165 Pin Memory IC 9 Mb kb 15mm mm 305mA mA 18b b
Price: 0.0000
RFQ -
71T75602S133BGI Integrated Device Technology (IDT)
Surface Mount 119 Pin Memory IC 18 Mb kb 14mm mm 215mA mA 36b b
Price: 0.0000
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