Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Density | Width | Mounting Type | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Operating Temperature (Max) | Operating Temperature (Min) | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Supplier Device Package | Output Characteristics | Access Time | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Memory IC Type | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NAND128W3A0BN6E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tray | 2004 | yes | Obsolete | 3 (168 Hours) | 48 | 3A991.B.1.A | 18.4mm | ROHS3 Compliant | No | 48 | 48-TFSOP (0.724, 18.40mm Width) | 128 Mb | Surface Mount | -40°C~85°C TA | 3V | FLASH - NAND | 1.2mm | 8542.32.00.51 | 1 | 20mA | e3 | MATTE TIN | DUAL | 260 | 3V | 30 | NAND128-A | 48 | 0.5mm | 3V | 128Mb 16M x 8 | Non-Volatile | 24b | 2.7V~3.6V | 16MX8 | 8 | Asynchronous | 0.00005A | 35 ns | 8b | NO | NO | YES | 1K | 512words | YES | FLASH | Parallel | 50ns | 16K | ||||||||||||||||||||||||||||||||||||||||||||||||
.png "MT53B512M64D4NH-062 WT ES:C") |
MT53B512M64D4NH-062 WT ES:C | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 1 (Unlimited) | 272-WFBGA | Surface Mount | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 32Gb 512M x 64 | Volatile | 1.1V | 1600MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43R83200F-6TL-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | yes | Active | 3 (168 Hours) | 66 | 2.5V | 1 | 22.22mm | ROHS3 Compliant | AUTO/SELF REFRESH | 66-TSSOP (0.400, 10.16mm Width) | 256 Mb | Surface Mount | 0°C~70°C TA | SDRAM - DDR | SYNCHRONOUS | 1.2mm | 1 | DUAL | NOT SPECIFIED | 2.5V | NOT SPECIFIED | YES | 0.65mm | R-PDSO-G66 | 2.3V | 2.7V | 700ps | 256Mb 32M x 8 | Volatile | 13b | 2.3V~2.7V | 32MX8 | 8 | 166MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M29W256GL70ZA6E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2013 | yes | Obsolete | 3 (168 Hours) | 64 | 3A991.B.1.A | 13mm | ROHS3 Compliant | No | 64 | 64-TBGA | 256 Mb | 10mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.2mm | 8542.32.00.51 | 1 | 10mA | e1 | TIN SILVER COPPER | BOTTOM | 260 | 3V | 30 | M29W256 | 64 | YES | 1mm | 3/3.3V | 2.7V | 256Mb 32M x 8 16M x 16 | Non-Volatile | 2.7V~3.6V | 16MX16 | 16 | Asynchronous | 0.0001A | 70 ns | 8 | 0.00007ms | YES | YES | YES | 256 | 8/16words | YES | YES | FLASH | Parallel | 70ns | 128K | |||||||||||||||||||||||||||||||||||||||||||||
 |
47L04-E/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 26 Weeks | Tube | Active | 1 (Unlimited) | 8 | 4.9mm | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 3.9mm | Surface Mount | -40°C~125°C TA | EEPROM, SRAM | SYNCHRONOUS | 1.75mm | 1 | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 3V | 40 | 47L04 | YES | 1.27mm | R-PDSO-G8 | 2.7V | 3.6V | 400ns | 4Kb 512 x 8 | Non-Volatile | 2.7V~3.6V | 512X8 | 8 | 4096 bit | 1MHz | EERAM | I2C | 1ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61WV25616BLL-10BI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | no | Last Time Buy | 3 (168 Hours) | 48 | 1 | 8mm | ROHS3 Compliant | No | 48 | 48-TFBGA | 4 Mb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 3.3V | 48 | YES | 0.75mm | 2.4V | 2.5/3.3V | 3.6V | 3-STATE | 4Mb 256K x 16 | Volatile | 18b | 0.045mA | 2.4V~3.6V | 16 | 0.009A | COMMON | 2V | SRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MTFC4GMDEA-R1 IT TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | e•MMC™ | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 153-WFBGA | Surface Mount | -40°C~85°C TA | FLASH - NAND | 153-WFBGA (11.5x13) | 32Gb 4G x 8 | Non-Volatile | 2.7V~3.6V | FLASH | MMC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
PF48F4400P0VBQ2F TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2013 | StrataFlash™ | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 88-TFBGA, CSPBGA | Surface Mount | -40°C~85°C TC | FLASH - NOR | PF48F4400P0 | 512Mb 32M x 16 | Non-Volatile | 1.7V~2V | 52MHz | FLASH | Parallel | 85ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT27C4096-12PC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1998 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 40-DIP (0.600, 15.24mm) | Through Hole | 0°C~70°C TC | EPROM - OTP | AT27C4096 | 40-PDIP | 120ns | 4Mb 256K x 16 | Non-Volatile | 4.5V~5.5V | EPROM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61LF51218A-7.5TQLI | ISSI, Integrated Silicon Solution Inc | 26.3573 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | yes | Active | 3 (168 Hours) | 100 | 3.3V | 2 | ROHS3 Compliant | No | 100 | FLOW-THROUGH ARCHITECTURE | 100-LQFP | 9 Mb | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 1.6mm | 1 | 185mA | e3 | Matte Tin (Sn) - annealed | QUAD | 260 | 3.3V | 40 | 100 | YES | 0.65mm | 3.135V | 3.465V | 3-STATE | 7.5ns | 9Mb 512K x 18 | Volatile | 19b | 3.135V~3.6V | 18 | Synchronous | 117MHz | 0.085A | 18b | COMMON | 3.14V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V016SA15PHI | Renesas Electronics America Inc. | 3.7181 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 44-TSOP (0.400, 10.16mm Width) | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | IDT71V016 | 44-TSOP II | 15ns | 1Mb 64K x 16 | Volatile | 3V~3.6V | SRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT49F001AN-45JI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1997 | Obsolete | 2 (1 Year) | Non-RoHS Compliant | 32-LCC (J-Lead) | Surface Mount | -40°C~85°C TC | FLASH | AT49F001 | 32-PLCC (13.97x11.43) | 45ns | 1Mb 128K x 8 | Non-Volatile | 4.5V~5.5V | FLASH | Parallel | 50μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
M58LT256KST8ZA6F TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2010 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 64-TBGA | Surface Mount | -40°C~85°C TA | FLASH - NOR | M58LT256 | 256Mb 16M x 16 | Non-Volatile | 1.7V~2V | 52MHz | FLASH | Parallel | 85ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT53D512M16D1DS-046 AIT:D TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Automotive, AEC-Q100 | Active | 3 (168 Hours) | ROHS3 Compliant | 200-WFBGA | Surface Mount | -40°C~95°C TC | SDRAM - Mobile LPDDR4 | 8Gb 512M x 16 | Volatile | 2.133GHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43LR32160C-6BLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 14 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 1.8V | ROHS3 Compliant | 90 | 90-TFBGA | Surface Mount | -40°C~85°C TA | SDRAM - Mobile LPDDR | 60mA | 5.5ns | 512Mb 16M x 32 | Volatile | 1.7V~1.95V | 32b | 166MHz | DRAM | Parallel | 12ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70261S55PFI8/2703 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | 256Kb 16K x 16 | Volatile | 4.5V~5.5V | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IS61NLP51218A-200TQLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | yes | Active | 2 (1 Year) | 100 | 3.3V | 2 | ROHS3 Compliant | No | 100 | PIPELINED ARCHITECTURE | 100-LQFP | 9 Mb | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 1.6mm | 1 | 280mA | e3 | Matte Tin (Sn) - annealed | QUAD | 260 | 3.3V | 40 | 100 | YES | 0.65mm | 3.135V | 3.465V | 3-STATE | 3.1ns | 9Mb 512K x 18 | Volatile | 19b | 3.135V~3.465V | 18 | Synchronous | 200MHz | 0.05A | 18b | COMMON | 3.14V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43R86400D-6BL-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | yes | Active | 3 (168 Hours) | 60 | 1 | 13mm | ROHS3 Compliant | 60 | AUTO/SELF REFRESH | 60-TFBGA | Surface Mount | 0°C~70°C TA | SDRAM - DDR | SYNCHRONOUS | 370mA | 1.2mm | 1 | e3 | MATTE TIN | BOTTOM | 225 | 2.5V | NOT SPECIFIED | YES | 1mm | 2.3V | Not Qualified | 2.5V | 2.7V | 3-STATE | 700ps | 512Mb 64M x 8 | Volatile | 2.3V~2.7V | 64MX8 | 8 | 536870912 bit | 8b | 166MHz | 0.025A | COMMON | 8192 | DRAM | Parallel | 15ns | 248 | 248 | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
93C76B-I/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Through Hole | Tube | 2012 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 9.46mm | ROHS3 Compliant | No | 8 | 8-DIP (0.300, 7.62mm) | Serial | 8 kb | 7.62mm | Through Hole | -40°C~85°C TA | CMOS | 4.32mm | 1 | 3mA | e3 | Matte Tin (Sn) | DUAL | 2.5V | 93C76B | 8 | 2.54mm | 5V | 8Kb 512 x 16 | Non-Volatile | 4.5V~5.5V | 8 | 3MHz | 0.000001A | 8 | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 6ms | MICROWIRE | EEPROM | SPI | 2ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70914S20PF/8029 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 80-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Synchronous | 20ns | 36Kb 4K x 9 | Volatile | 4.5V~5.5V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT29TZZZ8D5JKEPD-125 W.95T TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V9079S6PF | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Synchronous | IDT70V9079 | 6.5ns | 256Kb 32K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61WV5128BLL-10BI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | Non-RoHS Compliant | 36 | 36-TFBGA | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 4Mb 512K x 8 | Volatile | 2.4V~3.6V | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F512G08CUCDBJ6-6R:D | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tray | Obsolete | 3 (168 Hours) | 70°C | 0°C | 3.3V | ROHS3 Compliant | 132 | 132-LBGA | Parallel | Surface Mount | 0°C~70°C TA | FLASH - NAND | 132-LBGA (12x18) | 512Gb 64G x 8 | Non-Volatile | 2.7V~3.6V | 166MHz | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CAT93C86VI-GT3 | ON Semiconductor | 0.4696 |
Min: 1 Mult: 1 |
0.00000000 | download | 5 Weeks | ACTIVE (Last Updated: 2 days ago) | Tape & Reel (TR) | 2008 | yes | Active | 1 (Unlimited) | 8 | 4.9mm | ROHS3 Compliant | 8 | 8-SOIC (0.154, 3.90mm Width) | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.75mm | 1 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 5V | 40 | CAT93C86 | 8 | YES | 1.27mm | Not Qualified | 3/5V | 5.5V | 16Kb 2K x 8 1K x 16 | Non-Volatile | 0.003mA | 1.8V~5.5V | 16KX1 | 1 | SERIAL | 3MHz | 0.00001A | 8 | 100 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | MICROWIRE | EEPROM | SPI | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
PF48F3000P0ZTQ0A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2009 | StrataFlash™ | Obsolete | 3 (168 Hours) | 88 | 1.8V | ROHS3 Compliant | 88 | 88-TFBGA, CSPBGA | Parallel, Serial | 128 Mb | Surface Mount | -40°C~85°C TC | FLASH - NOR | 28mA | BOTTOM | 48F3000P0 | YES | 0.8mm | Not Qualified | 1.81.8/3.3V | 1.7V | 128Mb 8M x 16 | Non-Volatile | 23b | 1.7V~2V | 8MX16 | 16 | Asynchronous | 52MHz | 0.000075A | 85 ns | 16b | NO | NO | 4127 | 4words | FLASH | Parallel | 85ns | 16K64K | TOP | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MTFC4GMVEA-IT TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | e•MMC™ | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 153-WFBGA | Surface Mount | -40°C~85°C TA | FLASH - NAND | 32Gb 4G x 8 | Non-Volatile | 2.7V~3.6V | FLASH | MMC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29GL512T12DHVV23 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 64 | 9mm | ROHS3 Compliant | 64-LBGA | 9mm | Surface Mount | CMOS | ASYNCHRONOUS | 1.4mm | 8542.32.00.51 | 1 | BOTTOM | BALL | 3V | INDUSTRIAL | YES | 1mm | S-PBGA-B64 | 2.7V | 105°C | -40°C | 3.6V | 32MX16 | 16 | 536870912 bit | FLASH | PARALLEL | 120 ns | 8 | 2.7V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V65703S80BQI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | Non-RoHS Compliant | 165-TBGA | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V65703 | 165-CABGA (13x15) | 8ns | 9Mb 256K x 36 | Volatile | 3.135V~3.465V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M95320-WDW6TG | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tape & Reel (TR) | yes | Obsolete | 3 (168 Hours) | 8 | EAR99 | 4.4mm | ROHS3 Compliant | 8 | 1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION | 8-TSSOP (0.173, 4.40mm Width) | SPI, Serial | 32 kb | 3mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.2mm | 1 | 5mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 5V | 30 | M95320 | 8 | 0.65mm | 2.5V | Not Qualified | 3/5V | 5.5V | 10 ms | 32Kb 4K x 8 | Non-Volatile | 2.5V~5.5V | 8 | 20MHz | 0.000002A | 40 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | 2.7V | SPI | EEPROM | SPI | 5ms |
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NAND128W3A0BN6E Micron Technology Inc.
Surface Mount 48 Pin Memory IC NAND128-A 128 Mb kb 18.4mm mm 20mA mA 8b b
Price: 0.0000
RFQ -
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IS43R83200F-6TL-TR ISSI, Integrated Silicon Solution Inc
Memory IC 256 Mb kb 22.22mm mm
Price: 0.0000
RFQ -
M29W256GL70ZA6E Micron Technology Inc.
3/3.3V V 64 Pin Memory IC M29W256 256 Mb kb 13mm mm 10mA mA
Price: 0.0000
RFQ -
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IS61WV25616BLL-10BI ISSI, Integrated Silicon Solution Inc
2.5/3.3V V 48 Pin Memory IC 4 Mb kb 8mm mm
Price: 0.0000
RFQ -
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PF48F4400P0VBQ2F TR Micron Technology Inc.
StrataFlash™ Memory IC StrataFlash™ Series PF48F4400P0
Price: 0.0000
RFQ -
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IS61LF51218A-7.5TQLI ISSI, Integrated Silicon Solution Inc
100 Pin Memory IC 9 Mb kb 185mA mA 18b b
Price: 26.3573
RFQ -
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MT53D512M16D1DS-046 AIT:D TR Micron Technology Inc.
Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
Price: 0.0000
RFQ -
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IS61NLP51218A-200TQLI ISSI, Integrated Silicon Solution Inc
100 Pin Memory IC 9 Mb kb 280mA mA 18b b
Price: 0.0000
RFQ -
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93C76B-I/P Microchip Technology
5V V Through Hole 8 Pin Memory IC 93C76B 8 kb kb 9.46mm mm 3mA mA
Price: 0.0000
RFQ -
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PF48F3000P0ZTQ0A Micron Technology Inc.
1.81.8/3.3V V StrataFlash™ Memory IC StrataFlash™ Series 48F3000P0 128 Mb kb 28mA mA 16b b
Price: 0.0000
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M95320-WDW6TG STMicroelectronics
3/5V V Surface Mount 8 Pin Memory IC M95320 32 kb kb 4.4mm mm 5mA mA
Price: 0.0000
RFQ
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