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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Source Url Status Check Date Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
TK6A45DA(STA4,Q,M) TK6A45DA(STA4,Q,M) Toshiba Semiconductor and Storage 5.9311
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0.00000000 16 Weeks Through Hole Tube 2011 π-MOSVII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) 35W TO-220SIS 5.5A N-Channel 1.35Ohm @ 2.8A, 10V 4.4V @ 1mA 490pF @ 25V 11nC @ 10V 18ns 8 ns 30V 5.5A Ta 450V 490pF 10V ±30V 1.35 Ω
SSM3J14TTE85LF SSM3J14TTE85LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 Cut Tape (CT) 2014 U-MOSII Obsolete 1 (Unlimited) RoHS Compliant TO-236-3, SC-59, SOT-23-3 unknown Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE YES Other Transistors Single 700mW Ta P-Channel 85m Ω @ 1.35A, 10V 413pF @ 15V 2.7A 2.7A Ta 30V 4V 10V ±20V
TK13E25D,S1X(S TK13E25D,S1X(S Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 2009 Active 1 (Unlimited) RoHS Compliant No 3 TO-220-3 Through Hole 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power Single 102W Tc 13A N-Channel 250m Ω @ 6.5A, 10V 3.5V @ 1mA 1100pF @ 100V 25nC @ 10V 40ns 20 ns 20V 13A Ta 250V 10V ±20V
IPD60R2K0C6BTMA1 IPD60R2K0C6BTMA1 Rochester Electronics, LLC 0.0000
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0.00000000 download Tape & Reel (TR) CoolMOS™ Obsolete 1 (Unlimited) ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) PG-TO252-3 22.3W Tc N-Channel 2Ohm @ 760mA, 10V 3.5V @ 60μA 140pF @ 100V 6.7nC @ 10V 2.4A Tc 600V 10V ±20V
C3M0065090J-TR C3M0065090J-TR Cree/Wolfspeed 0.0000
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0.00000000 23 Weeks Tape & Reel (TR) 2015 C3M™ Active 3 (168 Hours) RoHS Compliant 7 TO-263-8, D2Pak (7 Leads + Tab), TO-263CA Surface Mount -55°C~150°C TJ SiCFET (Silicon Carbide) 65mOhm D2PAK-7 113W Tc N-Channel 78mOhm @ 20A, 15V 2.1V @ 5mA 660pF @ 600V 30nC @ 15V 35A Tc 900V 15V +19V, -8V
TK10S04K3L(T6L1,NQ TK10S04K3L(T6L1,NQ Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSIV Active 1 (Unlimited) 175°C -55°C RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C TJ MOSFET (Metal Oxide) DPAK+ 25W Tc 10A N-Channel 28mOhm @ 5A, 10V 3V @ 1mA 410pF @ 10V 10nC @ 10V 7ns 4 ns 20V 10A Ta 40V 410pF 6V 10V ±20V 28 mΩ
C3M0021120D C3M0021120D Cree/Wolfspeed 29.8198
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0.00000000 C3M™ Active 1 (Unlimited) ROHS3 Compliant TO-247-3 Through Hole -40°C~175°C TJ SiCFET (Silicon Carbide) TO-247-3 469W Tc N-Channel 28.8mOhm @ 50A, 15V 3.6V @ 17.7mA 4818pF @ 1000V 160nC @ 15V 100A Tc 1200V 15V +15V, -4V
TK5A65D(STA4,Q,M) TK5A65D(STA4,Q,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Through Hole Tube 2010 π-MOSVII Active 1 (Unlimited) RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) 40W Tc 5A N-Channel 1.43 Ω @ 2.5A, 10V 4V @ 1mA 800pF @ 25V 16nC @ 10V 20ns 12 ns 30V 5A Ta 650V 10V ±30V
TK10A60W,S4X TK10A60W,S4X Toshiba Semiconductor and Storage 0.0000
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0.00000000 52 Weeks Tube 2013 DTMOSIV Active 1 (Unlimited) RoHS Compliant TO-220-3 Full Pack Through Hole MOSFET (Metal Oxide) TO-220 30W Tc N-Channel 380mOhm @ 4.9A, 10V 3.7V @ 500μA 720pF @ 300V 20nC @ 10V 9.7A Ta 600V 10V ±30V
IRL2203NSPBF IRL2203NSPBF Infineon Technologies 0.0000
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0.00000000 download Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 180W Tc SWITCHING 0.007Ohm 30V SILICON N-Channel 7m Ω @ 60A, 10V 3V @ 250μA 3290pF @ 25V 60nC @ 4.5V 75A 116A Tc 30V 400A 290 mJ 4.5V 10V ±16V
64-2105PBF 64-2105PBF Infineon Technologies 0.0000
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0.00000000 download Through Hole Tube 2012 HEXFET® Obsolete 1 (Unlimited) 175°C -55°C RoHS Compliant TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) TO-262 200W Tc 75A N-Channel 3.7mOhm @ 75A, 10V 4V @ 250μA 4340pF @ 25V 150nC @ 10V 75A Tc 40V 4.34nF 10V ±20V 3.7 mΩ
TPC8022-H(TE12LQ,M TPC8022-H(TE12LQ,M Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2007 Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant 8 8-SOIC (0.173, 4.40mm Width) Surface Mount 150°C TJ MOSFET (Metal Oxide) 1.9W 27mOhm 8-SOP (5.5x6.0) 1W Ta 7.5A N-Channel 27mOhm @ 3.8A, 10V 2.3V @ 1mA 650pF @ 10V 11nC @ 10V 3ns 2 ns 20V 40V 7.5A Ta 40V 650pF 4.5V 10V ±20V 27 mΩ
TJ60S04M3L(T6L1,NQ TJ60S04M3L(T6L1,NQ Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSVI Active 1 (Unlimited) 2 RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-XSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 90W Tc 60A SWITCHING 0.0094Ohm 40V SILICON P-Channel 6.3m Ω @ 30A, 10V 3V @ 1mA 6510pF @ 10V 125nC @ 10V 96ns 240 ns 10V 60A Ta 40V 120A 146 mJ 6V 10V +10V, -20V
TK5A50D(STA4,Q,M) TK5A50D(STA4,Q,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Through Hole Tube 2009 π-MOSVII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) Single 35W 1.5Ohm TO-220SIS 35W Tc 5A N-Channel 1.5Ohm @ 2.5A, 10V 4.4V @ 1mA 490pF @ 25V 11nC @ 10V 18ns 8 ns 30V 500V 5A Ta 500V 490pF 10V ±30V 1.5 Ω
RUQ050N02HZGTR RUQ050N02HZGTR ROHM Semiconductor 0.7831
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0.00000000 8 Weeks Tape & Reel (TR) Automotive, AEC-Q101 Active 1 (Unlimited) ROHS3 Compliant SOT-23-6 Thin, TSOT-23-6 Surface Mount 150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 950mW Ta N-Channel 30m Ω @ 5A, 4.5V 1V @ 1mA 900pF @ 10V 12nC @ 4.5V 5A Ta 20V 1.5V 4.5V ±10V
SSM3K16FU,LF SSM3K16FU,LF Toshiba Semiconductor and Storage 0.3434
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2007 π-MOSVI Active 1 (Unlimited) RoHS Compliant SC-70, SOT-323 unknown Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 150mW Ta 100mA N-Channel 3 Ω @ 10mA, 4V 1.1V @ 100μA 9.3pF @ 3V 100mA Ta 20V 1.5V 4V ±10V
TK22A65X5,S5X TK22A65X5,S5X Toshiba Semiconductor and Storage 5.5368
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0.00000000 12 Weeks Active 1 (Unlimited)
IXTN660N04T4 IXTN660N04T4 IXYS / Littelfuse 0.0000
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0.00000000 download 28 Weeks Chassis Mount Tube 2016 TrenchT4™ yes Active 1 (Unlimited) ROHS3 Compliant SOT-227-4, miniBLOC unknown Chassis Mount -55°C~175°C TJ MOSFET (Metal Oxide) 1040W Tc 660A N-Channel 0.85m Ω @ 100A, 10V 4V @ 250μA 44000pF @ 25V 860nC @ 10V Current Sensing 660A Tc 40V 10V ±15V
IXTA102N15T IXTA102N15T IXYS 4.1892
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0.00000000 download 30 Weeks Surface Mount Tube 2008 yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB unknown Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 PURE TIN GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 455W 455W Tc 102A SWITCHING 0.018Ohm 25 ns SILICON N-Channel 18m Ω @ 500mA, 10V 5V @ 1mA 5220pF @ 25V 87nC @ 10V 14ns 22 ns 20V 150V 102A Tc 300A 750 mJ 10V ±20V
SYC0102BLT1G SYC0102BLT1G Littelfuse Inc. 0.0000
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0.00000000 15 Weeks Tape & Reel (TR) 2016 Active 1 (Unlimited) ROHS3 Compliant
LSIC1MO120E0160 LSIC1MO120E0160 Littelfuse Inc. 9.4848
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0.00000000 download 25 Weeks Tube Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-247-3 Through Hole -55°C~150°C TJ SiCFET (Silicon Carbide) NOT SPECIFIED NOT SPECIFIED 125W Tc N-Channel 200m Ω @ 10A, 20V 4V @ 5mA 870pF @ 800V 57nC @ 20V 22A Tc 1200V 20V +22V, -6V
IRF7469TRPBF IRF7469TRPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 8 4.9784mm ROHS3 Compliant Contains Lead, Lead Free 9A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 17MOhm Surface Mount -55°C~150°C TJ 40V MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 1 Single 2.5W 11 ns 3V 2.5W Ta 9A SWITCHING 14 ns SILICON N-Channel 17m Ω @ 9A, 10V 3V @ 250μA 2000pF @ 20V 23nC @ 4.5V 2.2ns 3.5 ns 20V 40V 3 V 9A 9A Ta 73A 4.5V 10V ±20V
PMN49EN,165 PMN49EN,165 NXP USA Inc. 0.6601
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0.00000000 download Tape & Reel (TR) 2007 TrenchMOS™ Obsolete 1 (Unlimited) ROHS3 Compliant SC-74, SOT-457 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 6 1.75W Tc 2013-06-14 00:00:00 N-Channel 47m Ω @ 2A, 10V 2V @ 1mA 350pF @ 30V 8.8nC @ 4.5V 4.6A Tc 30V 4.5V 10V ±20V
IRFS7530-7PPBF IRFS7530-7PPBF Infineon Technologies 0.0000
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0.00000000 download 16 Weeks Surface Mount Tube 2008 HEXFET®, StrongIRFET™ Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free 7 TO-263-7, D2Pak (6 Leads + Tab) No SVHC Surface Mount 1.59999g -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 1 FET General Purpose Power Single 375W 24 ns 3.7V 375W Tc 240A 168 ns N-Channel 1.4m Ω @ 100A, 10V 3.7V @ 250μA 12960pF @ 25V 354nC @ 10V 102ns 79 ns 3.7V 240A Tc 60V 6V 10V ±20V
IXTP160N10T IXTP160N10T IXYS 4.4621
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0.00000000 download 17 Weeks Through Hole Tube 2006 TrenchMV™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) 3 R-PSFM-T3 FET General Purpose Powers 1 TO-220AB DRAIN Single 430W 430W Tc 160A SWITCHING 0.007Ohm 49 ns SILICON N-Channel 7m Ω @ 25A, 10V 4.5V @ 250μA 6600pF @ 25V 132nC @ 10V 61ns 42 ns 100V 160A Tc 430A 500 mJ 10V ±30V
IXTN32P60P IXTN32P60P IXYS 0.0000
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0.00000000 download 28 Weeks Chassis Mount Tube 2008 PolarP™ yes Active 1 (Unlimited) 4 ROHS3 Compliant AVALANCHE RATED, UL RECOGNIZED SOT-227-4, miniBLOC Chassis Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE Nickel (Ni) UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED 4 R-PUFM-X4 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE ISOLATED 890W 890W Tc 32A SWITCHING 0.35Ohm 95 ns SILICON P-Channel 350m Ω @ 500mA, 10V 4V @ 1mA 11100pF @ 25V 196nC @ 10V 27ns 33 ns 600V 32A Tc 96A 3500 mJ 10V ±20V
IXFX160N30T IXFX160N30T IXYS 0.0000
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0.00000000 download 30 Weeks Through Hole Tube 2009 GigaMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 AVALANCHE RATED TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) SINGLE NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 1390W Tc 160A SWITCHING 0.019Ohm SILICON N-Channel 19m Ω @ 60A, 10V 5V @ 8mA 28000pF @ 25V 335nC @ 10V 160A Tc 300V 440A 10V ±20V
PMV45EN,215 PMV45EN,215 NXP USA Inc. 0.1479
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0.00000000 download Tape & Reel (TR) 1997 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.75 e3 Tin (Sn) DUAL GULL WING 260 40 3 YES R-PDSO-G3 FET General Purpose Power Not Qualified IEC-60134 1 SINGLE WITH BUILT-IN DIODE TO-236AB 280mW Tj SWITCHING 0.042Ohm 30V SILICON N-Channel 42m Ω @ 2A, 10V 2V @ 1mA 350pF @ 30V 9.4nC @ 10V 5.4A 5.4A Tc 30V 4.5V 10V ±20V
IXTA50N25T IXTA50N25T IXYS 4.9238
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0.00000000 download 30 Weeks Surface Mount Tube 2005 yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant 3 AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB unknown Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 PURE TIN SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 400W Tc 50A SWITCHING 0.05Ohm 250V SILICON N-Channel 50m Ω @ 25A, 10V 5V @ 1mA 4000pF @ 25V 78nC @ 10V 50A Tc 250V 1500 mJ 10V ±30V
BUK958R5-40E,127 BUK958R5-40E,127 NXP USA Inc. 0.0000
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0.00000000 Tube 2012 TrenchMOS™ Obsolete 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED TO-220-3 not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 NO R-PSFM-T3 FET General Purpose Power AEC-Q101; IEC-60134 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 96W Tc SWITCHING 0.0081Ohm 40V SILICON N-Channel 6.6m Ω @ 20A, 10V 2.1V @ 1mA 2600pF @ 25V 20.9nC @ 5V 75A 75A Tc 40V 315A 44 mJ 5V 10V ±10V
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