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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mfr Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Package Product Status Power Dissipation (Max) Drive Voltage (Max Rds On, Min Rds On)
IPB120N04S404ATMA1 IPB120N04S404ATMA1 Infineon Technologies 0.0000
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2013 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 40V 79W Tc 120A 0.0036Ohm SILICON N-Channel 3.6m Ω @ 100A, 10V 4V @ 40μA 4100pF @ 25V 55nC @ 10V 120A Tc 480A 75 mJ 10V ±20V
APT6038BLLG APT6038BLLG Microsemi Corporation 0.0000
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0.00000000 download IN PRODUCTION (Last Updated: 1 month ago) Through Hole Tube 1997 POWER MOS 7® Active 1 (Unlimited) 150°C -55°C RoHS Compliant Lead Free 17A No TO-247-3 Through Hole 600V MOSFET (Metal Oxide) 265W 1 265W 9 ns TO-247 [B] 17A 17 ns N-Channel 380mOhm @ 8.5A, 10V 5V @ 1mA 1850pF @ 25V 43nC @ 10V 3ns 4 ns 30V 17A Tc 600V 1.85nF 380 mΩ
TPN2010FNH,L1Q TPN2010FNH,L1Q Toshiba Semiconductor and Storage 1.2666
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0.00000000 12 Weeks Surface Mount Cut Tape (CT) 2014 U-MOSVIII-H Active 1 (Unlimited) 150°C -55°C RoHS Compliant 8 8-PowerVDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 14 ns 168mOhm 8-TSON Advance (3.3x3.3) 700mW Ta 39W Tc 5.6A 19 ns N-Channel 198mOhm @ 2.8A, 10V 4V @ 200μA 600pF @ 100V 7nC @ 10V 5.2ns 4.5 ns 20V 250V 5.6A Ta 250V 600pF 10V ±20V 198 mΩ
BSC022N03SG BSC022N03SG Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2004 OptiMOS™ Obsolete 1 (Unlimited) 5 EAR99 RoHS Compliant Lead Free 50A 8 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 8-PowerTDFN Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN DUAL FLAT 260 40 8 R-PDSO-F5 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.8W 2.8W Ta 104W Tc 100A SWITCHING 0.0033Ohm 45 ns SILICON N-Channel 2.2m Ω @ 50A, 10V 2V @ 110μA 8290pF @ 15V 64nC @ 5V 9ns 8 ns 20V 30V 28A Ta 100A Tc 200A 4.5V 10V ±20V
IRF9Z30 IRF9Z30 Vishay Siliconix 0.8660
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0.00000000 download Through Hole Tube 2000 no Obsolete 1 (Unlimited) 3 EAR99 10.41mm Non-RoHS Compliant No 3 TO-220-3 9.01mm 4.7mm Through Hole 6.000006g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 1 1 TO-220AB DRAIN Single 12 ns 74W Tc 18A 50V 21 ns SILICON P-Channel 140m Ω @ 9.3A, 10V 4V @ 250μA 900pF @ 25V 39nC @ 10V 110ns 64 ns 20V 18A Tc 50V 60A 10V ±20V
RSL020P03TR RSL020P03TR ROHM Semiconductor 0.0000
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0.00000000 download 20 Weeks Surface Mount Tape & Reel (TR) 2007 yes Not For New Designs 1 (Unlimited) 6 EAR99 150°C -55°C ROHS3 Compliant No 6 6-SMD, Flat Leads Surface Mount MOSFET (Metal Oxide) ENHANCEMENT MODE e2 TIN COPPER DUAL 260 10 6 Other Transistors 1 SINGLE WITH BUILT-IN DIODE 1W 11 ns 1W Ta 2A SWITCHING 0.12Ohm 35 ns P-Channel 120m Ω @ 2A, 10V 350pF @ 10V 3.9nC @ 5V 11ns 11 ns 20V -30V 2A 2A Ta 30V 4V 10V ±20V
RAL035P01TCR RAL035P01TCR ROHM Semiconductor 0.0000
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0.00000000 download 20 Weeks Surface Mount Tape & Reel (TR) 2011 yes Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant Lead Free 6 6-SMD, Flat Leads not_compliant Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL NOT SPECIFIED NOT SPECIFIED 6 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE 1W Ta 3.5A SWITCHING 0.042Ohm 12V SILICON P-Channel 42m Ω @ 3.5A, 4.5V 1V @ 1mA 2700pF @ 6V 22nC @ 4.5V 3.5A Ta 12V 1.5V 4.5V -8V
STP60NF03L STP60NF03L STMicroelectronics 0.0000
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0.00000000 download Through Hole Tube STripFET™ yes Obsolete 1 (Unlimited) 3 EAR99 10.4mm ROHS3 Compliant Lead Free 60A 3 LOW THRESHOLD TO-220-3 No SVHC not_compliant 9.15mm 4.6mm Through Hole 175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED STP60N 3 FET General Purpose Power Not Qualified 1 TO-220AB DRAIN Single 100W 40 ns 1.5V 100W Tc 75 ns 60A SWITCHING SILICON N-Channel 10m Ω @ 30A, 10V 2.5V @ 250μA 2550pF @ 25V 58nC @ 5V 250ns 20V 30V 60A Tc 240A 650 mJ 4.5V 10V ±20V
TK4A55D(STA4,Q,M) TK4A55D(STA4,Q,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 24 Weeks Through Hole Tube 2009 π-MOSVII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) TO-220SIS 35W Tc 4A N-Channel 1.88Ohm @ 2A, 10V 4.4V @ 1mA 490pF @ 25V 11nC @ 10V 18ns 8 ns 30V 4A Ta 550V 490pF 10V ±30V 1.88 Ω
TSM4NB60CH C5G TSM4NB60CH C5G Taiwan Semiconductor Corporation 0.0000
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0.00000000 20 Weeks Tube Active 1 (Unlimited) ROHS3 Compliant TO-251-3 Short Leads, IPak, TO-251AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) TO-251 (IPAK) 50W Tc N-Channel 2.5Ohm @ 2A, 10V 4.5V @ 250μA 500pF @ 25V 14.5nC @ 10V 4A 600V 10V ±30V
IXFH16N50P IXFH16N50P IXYS / Littelfuse 0.0000
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0.00000000 download 30 Weeks Through Hole Tube 2006 HiPerFET™, PolarHT™ yes Active 1 (Unlimited) 3 16.26mm ROHS3 Compliant Lead Free 16A No 3 AVALANCHE RATED TO-247-3 21.46mm 5.3mm Through Hole -55°C~150°C TJ 500V MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) 3 FET General Purpose Power 1 DRAIN Single 300W 23 ns 300W Tc 16A SWITCHING 0.4Ohm 70 ns SILICON N-Channel 400m Ω @ 8A, 10V 5.5V @ 2.5mA 2250pF @ 25V 43nC @ 10V 25ns 22 ns 30V 500V 16A Tc 750 mJ 10V ±30V
IRL3715STRLPBF IRL3715STRLPBF Infineon Technologies 0.0000
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0.00000000 download Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 3.8W Ta 71W Tc N-Channel 14m Ω @ 26A, 10V 3V @ 250μA 1060pF @ 10V 17nC @ 4.5V 54A Tc 20V 4.5V 10V ±20V
IPI075N15N3GHKSA1 IPI075N15N3GHKSA1 Infineon Technologies 0.0000
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0.00000000 download Tube 2008 OptiMOS™ Obsolete 1 (Unlimited) TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 300W Tc N-Channel 7.5m Ω @ 100A, 10V 4V @ 270μA 5470pF @ 75V 93nC @ 10V 100A Tc 150V 8V 10V ±20V
HUF75652G3 HUF75652G3 ON Semiconductor 0.0000
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0.00000000 download 10 Weeks ACTIVE (Last Updated: 3 days ago) Through Hole Tube 2002 UltraFET™ yes Active 1 (Unlimited) 3 EAR99 15.87mm ROHS3 Compliant Lead Free 75A No 3 TO-247-3 No SVHC 20.82mm 4.82mm 8mOhm Through Hole 6.39g -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) FET General Purpose Power 1 DRAIN Single 515W 18.5 ns 4V 515W Tc 75A SWITCHING 80 ns SILICON N-Channel 8m Ω @ 75A, 10V 4V @ 250μA 7585pF @ 25V 475nC @ 20V 195ns 190 ns 20V 100V 4 V 75A Tc 10V ±20V
NTHD2110TT1G NTHD2110TT1G Rochester Electronics, LLC 0.0000
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0.00000000 download Tape & Reel (TR) yes Obsolete 1 (Unlimited) 8 ROHS3 Compliant 8-SMD, Flat Lead unknown Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 TIN DUAL C BEND NOT SPECIFIED NOT SPECIFIED 8 YES R-PDSO-C8 COMMERCIAL 1 SINGLE WITH BUILT-IN DIODE 1.1W Ta SWITCHING 0.04Ohm 12V SILICON P-Channel 40m Ω @ 6.4A, 4.5V 850mV @ 250μA 1.072pF @ 6V 14nC @ 4.5V 4.5A 4.5A Ta 12V 1.8V 4.5V ±8V
SI7686DP-T1-GE3 SI7686DP-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2005 TrenchFET® yes Active 1 (Unlimited) 5 EAR99 4.9mm ROHS3 Compliant No 8 PowerPAK® SO-8 Unknown 1.04mm 5.89mm Surface Mount 506.605978mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL C BEND 260 30 8 R-XDSO-C5 1 FET General Purpose Power 1 DRAIN Single 5W 13 ns 3V 5W Ta 37.9W Tc 35A SWITCHING 0.0095Ohm 23 ns SILICON N-Channel 9.5m Ω @ 13.8A, 10V 3V @ 250μA 1220pF @ 15V 26nC @ 10V 16ns 8 ns 20V 30V 35A Tc 50A 5 mJ 4.5V 10V ±20V
IRFH5106TR2PBF IRFH5106TR2PBF Infineon Technologies 0.0000
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0.00000000 download Surface Mount Cut Tape (CT) 2010 HEXFET® Obsolete 1 (Unlimited) 150°C -55°C 5.9944mm RoHS Compliant No 8 8-PowerVDFN No SVHC 838.2μm 5mm Surface Mount MOSFET (Metal Oxide) 3.6W 1 Single 114W 8.1 ns 4V 5.6mOhm 8-PQFN (5x6) 42 ns 100A 23 ns N-Channel 5.6mOhm @ 50A, 10V 4V @ 250μA 3090pF @ 25V 75nC @ 10V 13ns 9.5 ns 20V 60V 4 V 21A Ta 100A Tc 60V 2.46nF 4.3 mΩ
IRF4905STRR IRF4905STRR Infineon Technologies 0.0000
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0.00000000 Tape & Reel (TR) 1997 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant HIGH RELIABILITY, AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 200W Tc SWITCHING 0.02Ohm 55V SILICON P-Channel 20m Ω @ 38A, 10V 4V @ 250μA 3400pF @ 25V 180nC @ 10V 42A 74A Tc 55V 280A 140 mJ 10V ±20V
IRF8252PBF IRF8252PBF Infineon Technologies 0.0000
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0.00000000 download Tube 2004 HEXFET® Obsolete 1 (Unlimited) 8 EAR99 RoHS Compliant 8-SOIC (0.154, 3.90mm Width) compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 2.5W Ta SWITCHING 0.0027Ohm 25V SILICON N-Channel 2.7m Ω @ 25A, 10V 2.35V @ 100μA 5305pF @ 13V 53nC @ 4.5V 25A 25A Ta 25V 200A 231 mJ 4.5V 10V ±20V
IPD65R650CEATMA1 IPD65R650CEATMA1 Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2015 CoolMOS™ yes Obsolete 1 (Unlimited) 2 RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 3.949996g -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 1 SINGLE WITH BUILT-IN DIODE DRAIN 86W Tc 10.1A SWITCHING 0.65Ohm SILICON N-Channel 650m Ω @ 2.1A, 10V 3.5V @ 0.21mA 440pF @ 100V 23nC @ 10V 650V Super Junction 10.1A Tc 10V ±20V
IRFUC20 IRFUC20 Vishay Siliconix 0.2344
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0.00000000 download Through Hole Tube 2016 no Obsolete 1 (Unlimited) 3 6.73mm Non-RoHS Compliant No 3 AVALANCHE RATED TO-251-3 Short Leads, IPak, TO-251AA 6.22mm 2.39mm Through Hole 329.988449mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e0 TIN LEAD 240 30 3 1 1 DRAIN Single 10 ns 2.5W Ta 42W Tc 2A SWITCHING 600V 30 ns SILICON N-Channel 4.4 Ω @ 1.2A, 10V 4V @ 250μA 350pF @ 25V 18nC @ 10V 23ns 25 ns 20V 2A 2A Tc 600V 8A 74 mJ 10V ±20V
IXFH15N80Q IXFH15N80Q IXYS / Littelfuse 0.0000
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0.00000000 download 8 Weeks Through Hole Tube 2000 HiPerFET™ yes Not For New Designs Not Applicable 3 EAR99 ROHS3 Compliant Lead Free 15A 3 AVALANCHE RATED TO-247-3 600mOhm Through Hole -55°C~150°C TJ 800V MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 DRAIN Single 300W 300W Tc 250 ns 15A SWITCHING 53 ns SILICON N-Channel 600m Ω @ 7.5A, 10V 4.5V @ 4mA 4300pF @ 25V 90nC @ 10V 27ns 16 ns 20V 800V 15A Tc 60A 1000 mJ 10V ±20V
IRF730S IRF730S Vishay Siliconix 0.2950
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0.00000000 download Surface Mount Tube 2016 Obsolete 1 (Unlimited) 150°C -55°C 10.67mm Non-RoHS Compliant Contains Lead 5.5A 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.83mm 9.65mm Surface Mount 1.437803g -55°C~150°C TJ 400V MOSFET (Metal Oxide) 1 Single 74W 10 ns 1Ohm D2PAK 3.1W Ta 74W Tc 5.5A 38 ns N-Channel 1Ohm @ 3.3A, 10V 4V @ 250μA 700pF @ 25V 38nC @ 10V 15ns 14 ns 20V 400V 5.5A Tc 400V 700pF 10V ±20V 1 Ω
IPP80N04S3-04 IPP80N04S3-04 Infineon Technologies 0.0000
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0.00000000 download Tube 2007 OptiMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant ULTRA LOW RESISTANCE TO-220-3 not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 136W Tc 0.0042Ohm 40V SILICON N-Channel 4.1m Ω @ 80A, 10V 4V @ 90μA 5200pF @ 25V 80nC @ 10V 80A 80A Tc 40V 320A 290 mJ 10V ±20V
BSS138N-E6327 BSS138N-E6327 Infineon Technologies 0.0000
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0.00000000 download Tape & Reel (TR) 2007 SIPMOS® Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant LOGIC LEVEL COMPATIBLE TO-236-3, SC-59, SOT-23-3 compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.21.00.95 e3 Matte Tin (Sn) DUAL GULL WING 260 40 3 YES R-PDSO-G3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 360mW Ta 60V SILICON N-Channel 3.5 Ω @ 230mA, 10V 1.4V @ 250μA 41pF @ 25V 1.4nC @ 10V 0.23A 230mA Ta 60V 3.8 pF 4.5V 10V ±20V
IPP80N04S404AKSA1 IPP80N04S404AKSA1 Infineon Technologies 0.0000
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0.00000000 download 16 Weeks Through Hole Tube 2010 OptiMOS™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 10 ns 40V 71W Tc 80A 0.0046Ohm 9 ns SILICON N-Channel 4.6m Ω @ 80A, 10V 4V @ 35μA 3440pF @ 25V 43nC @ 10V 12ns 20V 80A Tc 100 mJ 10V ±20V
5HP01M-TL-H 5HP01M-TL-H Rochester Electronics, LLC 0.0000
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0.00000000 Tape & Reel (TR) Obsolete 1 (Unlimited) Non-RoHS Compliant SC-70, SOT-323 Surface Mount 150°C TJ MOSFET (Metal Oxide) 3-MCP 150mW Ta P-Channel 22Ohm @ 40mA, 10V 6.2pF @ 10V 1.32nC @ 10V 70mA Ta 50V 4V 10V ±20V
IRF613 IRF613 Harris Corporation 0.0000
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0.00000000 - TO-220-3 Harris Corporation Through Hole -55°C ~ 150°C (TJ) MOSFET (Metal Oxide) TO-220AB N-Channel 2.4Ohm @ 1.6A, 10V 4V @ 250μA 135 pF @ 25 V 8.2 nC @ 10 V - 2.6A (Tc) 150 V ±20V Bulk Active 43W (Tc) 10V
SIR618DP-T1-GE3 SIR618DP-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Tape & Reel (TR) ThunderFET® Active 1 (Unlimited) ROHS3 Compliant PowerPAK® SO-8 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) PowerPAK® SO-8 48W Tc N-Channel 95mOhm @ 8A, 10V 4V @ 250μA 740pF @ 100V 16nC @ 7.5V 14.2A Tc 200V 7.5V 10V ±20V
SI2300DS-T1-GE3 SI2300DS-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2010 TrenchFET® yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free Tin No 3 TO-236-3, SC-59, SOT-23-3 Unknown 1.12mm 68MOhm Surface Mount 1.437803g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING 260 30 3 1 FET General Purpose Power 1 Single 1.1W 5 ns 600mV 1.1W Ta 1.7W Tc 3.1A 150°C SWITCHING 15 ns SILICON N-Channel 68m Ω @ 2.9A, 4.5V 1.5V @ 250μA 320pF @ 15V 10nC @ 10V 15ns 11 ns 12V 30V 3.6A Tc 2.5V 4.5V ±12V
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