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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Length RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Mounting Type Weight Operating Temperature Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Max Dual Supply Voltage Drain to Source Resistance Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
BSZ42DN25NS3GATMA1 BSZ42DN25NS3GATMA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead Tin 8 8-PowerTDFN No SVHC not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL NO LEAD 8 S-PDSO-N5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 3 ns 250V 33.8W Tc 5A SWITCHING 0.425Ohm 8 ns SILICON N-Channel 425m Ω @ 2.5A, 10V 4V @ 13μA 430pF @ 100V 5.5nC @ 10V 2ns 20V 5A 5A Tc 20A 40 mJ 10V ±20V
BUK969R0-60E,118 BUK969R0-60E,118 Nexperia USA Inc. 0.0000
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0.00000000 download 12 Weeks Tape & Reel (TR) 2014 Automotive, AEC-Q101, TrenchMOS™ Active 1 (Unlimited) 2 ROHS3 Compliant Tin 3 AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 SINGLE GULL WING 3 YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 21 ns 60V 137W Tc 75A SWITCHING 0.009Ohm 32 ns SILICON N-Channel 8m Ω @ 20A, 10V 2.1V @ 1mA 4350pF @ 25V 29.8nC @ 5V 65ns 46 ns 10V 75A Tc 86 mJ 5V ±10V
RRH140P03GZETB RRH140P03GZETB ROHM Semiconductor 0.1618
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0.00000000 20 Weeks Surface Mount Tape & Reel (TR) 2012 Active 1 (Unlimited) ROHS3 Compliant 8 8-SOIC (0.154, 3.90mm Width) Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 32 ns 650mW Ta 14A 360 ns P-Channel 7m Ω @ 14A, 10V 2.5V @ 1mA 8000pF @ 10V 150nC @ 10V 80ns 200 ns 20V -30V 14A Ta 30V 4V 10V ±20V
IRLR8503TRR IRLR8503TRR Infineon Technologies 0.0000
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0.00000000 Tape & Reel (TR) 2005 HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 62W Tc N-Channel 16m Ω @ 15A, 10V 3V @ 250μA 1650pF @ 25V 20nC @ 5V 44A Tc 30V 4.5V 10V ±20V
FDBL86210-F085 FDBL86210-F085 ON Semiconductor 0.0000
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0.00000000 download 36 Weeks ACTIVE (Last Updated: 12 hours ago) Surface Mount Tape & Reel (TR) 2017 Automotive, AEC-Q101, PowerTrench® yes Active 1 (Unlimited) ROHS3 Compliant 8 8-PowerSFN not_compliant Surface Mount 850.0521mg -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 1 FET General Purpose Power Single 39 ns 500W Tj 169A 70 ns N-Channel 6.3m Ω @ 80A, 10V 4V @ 250μA 5805pF @ 75V 90nC @ 10V 30ns 23 ns 20V 169A Tc 150V 10V ±20V
RE1L002SNTL RE1L002SNTL ROHM Semiconductor 0.0000
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0.00000000 16 Weeks Cut Tape (CT) 2012 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant SC-89, SOT-490 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED YES R-PDSO-F3 1 SINGLE WITH BUILT-IN DIODE 150mW Ta SWITCHING 3.2Ohm 60V SILICON N-Channel 2.4 Ω @ 250mA, 10V 2.3V @ 1mA 15pF @ 25V 0.25A 250mA Ta 60V 10V ±20V
TSM70N900CI C0G TSM70N900CI C0G Taiwan Semiconductor Corporation 0.0000
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0.00000000 24 Weeks Tube Active 1 (Unlimited) ROHS3 Compliant TO-220-3 Full Pack, Isolated Tab Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 50W Tc N-Channel 900m Ω @ 1.5A, 10V 4V @ 250μA 482pF @ 100V 9.7nC @ 10V 4.5A Tc 700V 10V ±30V
IPP220N25NFDAKSA1 IPP220N25NFDAKSA1 Infineon Technologies 0.0000
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0.00000000 download 13 Weeks Through Hole Tube 2012 OptiMOS™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 TO-220-3 not_compliant Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 1 1 TO-220AB DRAIN Halogen Free Single 14 ns 250V 300W Tc 61A 0.022Ohm 26 ns SILICON N-Channel 22m Ω @ 61A, 10V 4V @ 270μA 7076pF @ 125V 86nC @ 10V 10ns 8 ns 20V 61A Tc 244A 10V ±20V
IXFR230N20T IXFR230N20T IXYS 0.0000
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0.00000000 download 30 Weeks Through Hole Tube 2011 GigaMOS™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant AVALANCHE RATED, UL RECOGNIZED TO-247-3 unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE 3 R-PSIP-T3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE ISOLATED 600W Tc 156A SWITCHING 0.008Ohm 200V SILICON N-Channel 8m Ω @ 60A, 10V 5V @ 8mA 28000pF @ 25V 378nC @ 10V 156A Tc 200V 630A 3000 mJ 10V ±20V
TSM055N03PQ56 RLG TSM055N03PQ56 RLG Taiwan Semiconductor Corporation 0.0000
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0.00000000 download Digi-Reel® Discontinued 1 (Unlimited) ROHS3 Compliant 8-PowerTDFN Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 260 30 74W Tc N-Channel 5.5m Ω @ 20A, 10V 2.5V @ 250μA 1160pF @ 25V 11.1nC @ 4.5V 80A Tc 30V 4.5V 10V ±20V
SIA440DJ-T1-GE3 SIA440DJ-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2015 TrenchFET® Active 1 (Unlimited) 3 EAR99 2.05mm ROHS3 Compliant No 6 PowerPAK® SC-70-6 Unknown 750μm 2.05mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL S-PDSO-N3 1 1 DRAIN Single 12 ns 3.5W Ta 19W Tc 12A SWITCHING 23 ns SILICON N-Channel 26m Ω @ 9A, 10V 1.4V @ 250μA 700pF @ 20V 21.5nC @ 10V 32ns 5 ns 12V 40V 12A Tc 50A 2.5V 10V ±12V
IMZ120R090M1HXKSA1 IMZ120R090M1HXKSA1 Infineon Technologies 0.0000
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0.00000000 download 20 Weeks CoolSiC™ Active Not Applicable ROHS3 Compliant TO-247-4 Through Hole -55°C~175°C TJ SiCFET (Silicon Carbide) 115W Tc N-Channel 117m Ω @ 8.5A, 18V 5.7V @ 3.7mA 707pF @ 800V 21nC @ 18V 26A Tc 1.2kV 15V 18V +23V, -7V
TJ8S06M3L(T6L1,NQ) TJ8S06M3L(T6L1,NQ) Toshiba Semiconductor and Storage 3.9285
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSVI Active 1 (Unlimited) RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C TJ MOSFET (Metal Oxide) 27W Tc 8A P-Channel 104m Ω @ 4A, 10V 3V @ 1mA 890pF @ 10V 19nC @ 10V 6ns 34 ns 10V 8A Ta 60V 6V 10V +10V, -20V
BUK7907-55AIE,127 BUK7907-55AIE,127 Nexperia USA Inc. 0.0000
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0.00000000 download 12 Weeks Tube 2008 Automotive, AEC-Q101, TrenchMOS™ Obsolete 1 (Unlimited) 5 EAR99 RoHS Compliant Tin No 5 TO-220-5 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 5 NO FET General Purpose Power 1 DRAIN Single 272W 36 ns 55V 272W Tc 140A SWITCHING 0.007Ohm 159 ns SILICON N-Channel 7m Ω @ 50A, 10V 4V @ 1mA 4500pF @ 25V 116nC @ 10V 115ns 111 ns 20V 55V 75A Tc 460 mJ 10V ±20V
AOB240L AOB240L Alpha & Omega Semiconductor Inc. 0.6105
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0.00000000 16 Weeks Surface Mount Tape & Reel (TR) 2011 Not For New Designs 1 (Unlimited) ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Powers 1 Single 176W 1.9W Ta 176W Tc 105A N-Channel 2.6m Ω @ 20A, 10V 2.2V @ 250μA 3510pF @ 20V 72nC @ 10V 20V 20A Ta 105A Tc 40V 4.5V 10V ±20V
AON6262E AON6262E Alpha & Omega Semiconductor Inc. 0.0000
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0.00000000 18 Weeks Cut Tape (CT) 2011 AlphaSGT™ Active 1 (Unlimited) ROHS3 Compliant 8-PowerSMD, Flat Leads Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 48W Tc N-Channel 6.2m Ω @ 20A, 10V 2.2V @ 250μA 1650pF @ 30V 45nC @ 10V 40A Tc 60V 4.5V 10V ±20V
TSM60NB260CI C0G TSM60NB260CI C0G Taiwan Semiconductor Corporation 0.0000
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0.00000000 download 24 Weeks Tube Active 1 (Unlimited) ROHS3 Compliant TO-220-3 Full Pack, Isolated Tab Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 32.1W Tc N-Channel 260m Ω @ 3.9A, 10V 4V @ 250μA 1273pF @ 100V 30nC @ 10V 13A Tc 600V 10V ±30V
TSM4NC50CP ROG TSM4NC50CP ROG Taiwan Semiconductor Corporation 0.1051
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0.00000000 download 20 Weeks Digi-Reel® Active 3 (168 Hours) 2 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 83W Tc SWITCHING 500V SILICON N-Channel 2.7 Ω @ 1.7A, 10V 3V @ 250μA 453pF @ 50V 12nC @ 10V 4A 4A Tc 500V 16A 78.4 mJ 10V ±20V
IPD50N06S409ATMA1 IPD50N06S409ATMA1 Infineon Technologies 0.0000
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0.00000000 download Tape & Reel (TR) 2009 OptiMOS™ Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 71W Tc 0.009Ohm 60V SILICON N-Channel 9m Ω @ 50A, 10V 4V @ 34μA 3785pF @ 25V 47nC @ 10V 50A 50A Tc 60V 200A 87 mJ 10V ±20V
TK750A60F,S4X TK750A60F,S4X Toshiba Semiconductor and Storage 1.1137
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0.00000000 12 Weeks Tube 2017 U-MOSIX Active Not Applicable RoHS Compliant TO-220-3 Full Pack Through Hole 150°C MOSFET (Metal Oxide) 40W Tc N-Channel 750m Ω @ 5A, 10V 4V @ 1mA 1130pF @ 300V 30nC @ 10V 10A Ta 600V 10V ±30V
FDI045N10A-F102 FDI045N10A-F102 ON Semiconductor 0.0000
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0.00000000 9 Weeks ACTIVE (Last Updated: 3 days ago) Through Hole Tube PowerTrench® yes Active 1 (Unlimited) 10.29mm ROHS3 Compliant No 3 TO-262-3 Long Leads, I2Pak, TO-262AA 9.65mm 4.83mm Through Hole 2.084g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 Single 263W 23 ns 263W Tc 120A 50 ns N-Channel 4.5m Ω @ 100A, 10V 4V @ 250μA 5270pF @ 50V 74nC @ 10V 26ns 15 ns 20V 100V 120A Tc 10V ±20V
FQH44N10-F133 FQH44N10-F133 ON Semiconductor 0.0000
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0.00000000 download 4 Weeks ACTIVE (Last Updated: 2 days ago) Through Hole Tube QFET® yes Active 1 (Unlimited) 3 ROHS3 Compliant No TO-247-3 Through Hole 6.39g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE R-PSFM-T3 FET General Purpose Power 1 TO-247AB Single 180W 19 ns 180W Tc 48A SWITCHING 0.039Ohm 90 ns SILICON N-Channel 39m Ω @ 24A, 10V 4V @ 250μA 1800pF @ 25V 62nC @ 10V 190ns 100 ns 25V 100V 48A Tc 192A 530 mJ 10V ±25V
SPP11N60S5HKSA1 SPP11N60S5HKSA1 Infineon Technologies 0.0000
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0.00000000 download Through Hole Tube 2005 CoolMOS™ no Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant AVALANCHE RATED TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 125W 130 ns 125W Tc 11A SWITCHING 0.38Ohm 600V 150 ns SILICON N-Channel 380m Ω @ 7A, 10V 5.5V @ 500μA 1460pF @ 25V 54nC @ 10V 35ns 20 ns 20V 11A Tc 650V 22A 340 mJ 10V ±20V
IPP70N10S312AKSA1 IPP70N10S312AKSA1 Infineon Technologies 0.0000
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0.00000000 download Through Hole Tube 2008 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 TO-220-3 not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 17 ns 100V 125W Tc 70A 0.0116Ohm 25 ns SILICON N-Channel 11.6m Ω @ 70A, 10V 4V @ 83μA 4355pF @ 25V 66nC @ 10V 8ns 20V 70A Tc 280A 410 mJ 10V ±20V
IPP60R120C7XKSA1 IPP60R120C7XKSA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Through Hole Tube 1997 CoolMOS™ C7 yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN Halogen Free 600V 92W Tc 19A SWITCHING 0.12Ohm SILICON N-Channel 120m Ω @ 7.8A, 10V 4V @ 390μA 1500pF @ 400V 34nC @ 10V 19A Tc 66A 78 mJ 10V ±20V
FDMC4435BZ-F126 FDMC4435BZ-F126 ON Semiconductor 0.0000
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0.00000000 download 23 Weeks ACTIVE (Last Updated: 6 days ago) Surface Mount Tape & Reel (TR) PowerTrench® Active 1 (Unlimited) ROHS3 Compliant 8 8-PowerWDFN Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 31W 2.3W Ta 31W Tc 18A P-Channel 20m Ω @ 8.5A, 10V 3V @ 250μA 2045pF @ 15V 46nC @ 10V -30V 8.5A Ta 18A Tc 30V 4.5V 10V ±25V
SCH1331-S-TL-H SCH1331-S-TL-H ON Semiconductor 0.0000
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0.00000000 Surface Mount Tape & Reel (TR) 2013 Obsolete 1 (Unlimited) RoHS Compliant SOT-563, SOT-666 Surface Mount 1W 84mOhm -3A -12V
BSO130P03SHXUMA1 BSO130P03SHXUMA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Surface Mount Tape & Reel (TR) 2001 OptiMOS™ yes Active 3 (168 Hours) 8 EAR99 ROHS3 Compliant Lead Free Tin 8 LOGIC LEVEL COMPATIBLE 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 8 Not Qualified 1 SINGLE WITH BUILT-IN DIODE Halogen Free 1.56W -30V 1.56W Ta 9.2A SILICON P-Channel 13m Ω @ 11.7A, 10V 2.2V @ 140μA 3520pF @ 25V 81nC @ 10V 16ns 25V 9.2A Ta 30V 10V ±25V
TSM180N03PQ33 RGG TSM180N03PQ33 RGG Taiwan Semiconductor Corporation 4.3233
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0.00000000 download 20 Weeks Digi-Reel® Active 1 (Unlimited) ROHS3 Compliant 8-PowerWDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 21W Tc N-Channel 18m Ω @ 12A, 10V 2.5V @ 250μA 345pF @ 25V 4.1nC @ 4.5V 25A Tc 30V 4.5V 10V ±20V
PHK12NQ03LT,518 PHK12NQ03LT,518 Nexperia USA Inc. 0.0000
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0.00000000 download 16 Weeks Tape & Reel (TR) 2001 TrenchMOS™ Obsolete 2 (1 Year) 8 EAR99 Non-RoHS Compliant 8 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e4 Nickel/Palladium/Gold (Ni/Pd/Au) DUAL GULL WING 260 30 8 YES FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta 11.8A SWITCHING 0.0105Ohm 30V SILICON N-Channel 10.5m Ω @ 12A, 10V 2V @ 250μA 1335pF @ 16V 17.6nC @ 5V 12A 30V 35.3A 440 mJ 4.5V 10V ±20V
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