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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Diode Element Material Number of Elements Configuration Diode Type Application Number of Phases JEDEC-95 Code Forward Voltage Case Connection Max Surge Current Element Configuration Power Dissipation Turn On Delay Time Max Reverse Leakage Current Drain to Source Resistance Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Non-Repetitive Surge Current Voltage - DC Reverse (Vr) (Max) Reverse Recovery Time Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
IXTP110N12T2 IXTP110N12T2 IXYS 0.0000
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0.00000000 download 24 Weeks Tube TrenchT2™ Not For New Designs 1 (Unlimited) ROHS3 Compliant TO-220-3 unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 517W Tc N-Channel 14m Ω @ 55A, 10V 4.5V @ 250μA 6570pF @ 25V 120nC @ 10V 110A Tc 120V 10V ±20V
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0.00000000 24 Weeks Active TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 890W Tc N-Channel 2.2 Ω @ 6A, 10V 4.5V @ 250μA 3720pF @ 25V 106nC @ 10V 12A Tc 1500V 10V ±30V
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0.00000000 download Through Hole Tube 2006 TrenchMV™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant AVALANCHE RATED TO-247-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 1 DRAIN Single 430W 430W Tc 180A SWITCHING 0.0055Ohm 55 ns SILICON N-Channel 5.5m Ω @ 25A, 10V 4V @ 250μA 7500pF @ 25V 170nC @ 10V 70ns 65 ns 85V 180A Tc 480A 1000 mJ 10V ±20V
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0.00000000 download 28 Weeks Tube Linear L2™ Active TO-247-3 compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 960W Tc N-Channel 7m Ω @ 120A, 10V 4.5V @ 3mA 19000pF @ 25V 546nC @ 10V 240A Tc 75V 10V ±20V
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0.00000000 download 26 Weeks Surface Mount Tube 2006 PolarHT™ HiPerFET™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED TO-268-3, D3Pak (2 Leads + Tab), TO-268AA unknown Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 DRAIN Single 600W 600W Tc 96A SWITCHING 0.024Ohm 75 ns SILICON N-Channel 24m Ω @ 500mA, 10V 5V @ 4mA 4800pF @ 25V 145nC @ 10V 30ns 30 ns 20V 200V 96A Tc 225A 1500 mJ 10V ±20V
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0.00000000 download 30 Weeks Through Hole Tube 2011 HiPerFET™ Active 1 (Unlimited) 3 16.13mm ROHS3 Compliant Lead Free 247 AVALANCHE RATED TO-247-3 unknown 21.34mm 5.21mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 3 R-PSIP-T3 FET General Purpose Power 1 DRAIN Single 1kW 37 ns 1000W Tc 48A SWITCHING 0.14Ohm 40 ns SILICON N-Channel 140m Ω @ 24A, 10V 6.5V @ 4mA 7020pF @ 25V 140nC @ 10V 300ns 30V 600V 48A Tc 120A 2000 mJ 10V ±30V
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0.00000000 download Through Hole Tube 2006 TrenchMV™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant AVALANCHE RATED TO-247-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 Not Qualified 1 TO-247AD DRAIN Single 480W 480W Tc 240A SWITCHING 0.0036Ohm 63 ns SILICON N-Channel 3.6m Ω @ 25A, 10V 4V @ 250μA 7600pF @ 25V 170nC @ 10V 54ns 75 ns 55V 240A Tc 650A 1000 mJ 10V ±20V
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0.00000000 download 28 Weeks Tube Linear L2™ Active TO-247-3 compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 540W Tc N-Channel 11m Ω @ 70A, 10V 4.5V @ 250μA 9300pF @ 25V 275nC @ 10V 140A Tc 75V 10V ±20V
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0.00000000 download 8 Weeks Through Hole Tube 1999 HiPerFET™ yes Obsolete Not Applicable 3 EAR99 RoHS Compliant Lead Free 58A 3 AVALANCHE RATED TO-247-3 40MOhm Through Hole -55°C~150°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 DRAIN Single 300W 300W Tc 58A SWITCHING 40 ns SILICON N-Channel 40m Ω @ 29A, 10V 4V @ 4mA 3600pF @ 25V 140nC @ 10V 40ns 13 ns 20V 200V 58A Tc 1000 mJ 10V ±20V
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0.00000000 30 Weeks Tape & Reel (TR) Active 1 (Unlimited) 150°C -55°C ROHS3 Compliant TO-263-3 2.299997g 1 200W 23 ns 740mOhm 10A 21 ns 27ns 21 ns 30V 600V
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0.00000000 download Surface Mount yes 2 EAR99 150°C -55°C RoHS Compliant No FREEWHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE TO-263 1.59999g AVALANCHE 8541.10.00.80 e3 Matte Tin (Sn) SINGLE GULL WING 4 R-PSSO-G2 Rectifier Diodes SILICON 1 RECTIFIER DIODE FAST SOFT RECOVERY 1 3.18V CATHODE 200A Common Anode 50μA 600V 30A 200A 35 ns 35 ns
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0.00000000 download 19 Weeks Tube HiPerFET™ yes Active 1 (Unlimited) ROHS3 Compliant TO-3P-3, SC-65-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 320W Tc N-Channel 23m Ω @ 30A, 10V 4.5V @ 1.5mA 3610pF @ 25V 50nC @ 10V 60A Tc 250V 10V ±20V
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0.00000000 Surface Mount Tape & Reel (TR) 2004 HiPerFRED™ Obsolete 1 (Unlimited) RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount DSEP29-06 Standard Fast Recovery =< 500ns, > 200mA (Io) 250μA @ 600V 2.52V @ 30A -55°C~175°C 600V 30A 600V 30 ns
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0.00000000 download Through Hole Tube 2000 HiPerFET™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free 3 AVALANCHE RATED TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 DRAIN Single 360W 360W Tc 60A 0.047Ohm 80 ns SILICON N-Channel 47m Ω @ 500mA, 10V 4V @ 4mA 5100pF @ 25V 180nC @ 10V 60ns 25 ns 20V 250V 60A Tc 240A 1500 mJ 10V ±20V
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0.00000000 download Surface Mount Tube 2006 TrenchMV™ yes Obsolete 1 (Unlimited) 6 EAR99 RoHS Compliant AVALANCHE RATED TO-263-7, D2Pak (6 Leads + Tab), TO-263CB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 3 R-PSSO-G6 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 430W 430W Tc 180A SWITCHING 0.0055Ohm 55 ns SILICON N-Channel 5.5m Ω @ 25A, 10V 4V @ 250μA 7500pF @ 25V 170nC @ 10V 70ns 65 ns 85V 180A Tc 480A 1000 mJ 10V ±20V
IXTP76P10T IXTP76P10T IXYS 4.7908
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0.00000000 download 24 Weeks Through Hole Tube 2010 TrenchP™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No AVALANCHE RATED TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) 3 R-PSFM-T3 Other Transistors 1 TO-220AB DRAIN Single 298W 298W Tc 76A SWITCHING 0.024Ohm 52 ns SILICON P-Channel 25m Ω @ 500mA, 10V 4V @ 250μA 13700pF @ 25V 197nC @ 10V 40ns 20 ns 20V -100V 76A Tc 100V 230A 10V ±15V
IXTA4N65X2 IXTA4N65X2 IXYS 0.0000
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0.00000000 download 15 Weeks Surface Mount Tube 2015 Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 80W Tc 4A N-Channel 850m Ω @ 2A, 10V 5V @ 250μA 455pF @ 25V 8.3nC @ 10V 4A Tc 650V 10V ±30V
IXFR48N50Q IXFR48N50Q IXYS 0.0000
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0.00000000 download Through Hole Tube 2003 HiPerFET™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free AVALANCHE RATED ISOPLUS247™ 110MOhm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 R-PSIP-T3 FET General Purpose Power Not Qualified 1 ISOLATED Single 310W 310W Tc 40A SWITCHING 75 ns SILICON N-Channel 110m Ω @ 24A, 10V 4V @ 4mA 7000pF @ 25V 190nC @ 10V 22ns 10 ns 20V 500V 40A Tc 192A 2500 mJ 10V ±20V
IXTA140N055T2 IXTA140N055T2 IXYS 0.0000
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0.00000000 28 Weeks yes Active 2 (1 Year) 2 EAR99 RoHS Compliant AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 250W Ta SWITCHING 0.0054Ohm 55V SILICON N-Channel 5.4m Ω @ 50A, 10V 4V @ 250μA 4760pF @ 25V 82nC @ 10V 140A 140A Tc 55V 350A 600 mJ 10V ±20V
IXFX30N50Q IXFX30N50Q IXYS 0.0000
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0.00000000 download Through Hole Tube 2002 HiPerFET™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant 3 AVALANCHE RATED TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 DRAIN Single 416W 416W Tc 30A SWITCHING 0.16Ohm 75 ns SILICON N-Channel 160m Ω @ 15A, 10V 4.5V @ 4mA 3950pF @ 25V 150nC @ 10V 42ns 20 ns 20V 500V 30A Tc 120A 1500 mJ 10V ±20V
FMD21-05QC FMD21-05QC IXYS 0.0000
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0.00000000 download 20 Weeks Through Hole Tube 2004 yes Active 1 (Unlimited) 5 ROHS3 Compliant Lead Free No 5 HIGH RELIABILITY i4-Pac™-5 190MOhm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) 5 FET General Purpose Power 1 ISOLATED Single 192W 21A SWITCHING 50 ns SILICON N-Channel 220m Ω @ 15A, 10V 4.5V @ 250μA 95nC @ 10V 20ns 15 ns 20V 500V 21A Tc 10V ±20V
IXFX62N25 IXFX62N25 IXYS 0.0000
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0.00000000 download Through Hole Tube 2002 HiPerFET™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 DRAIN Single 390W 390W Tc 62A SWITCHING 115 ns SILICON N-Channel 35m Ω @ 31A, 10V 4V @ 4mA 6600pF @ 25V 240nC @ 10V 25ns 15 ns 20V 250V 62A Tc 248A 1500 mJ 10V ±20V
IXTM1316 IXTM1316 IXYS 0.0000
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0.00000000 Obsolete 1 (Unlimited) ROHS3 Compliant
IXFH32N100X IXFH32N100X IXYS 0.0000
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0.00000000 download 19 Weeks HiPerFET™ Active 1 (Unlimited) ROHS3 Compliant TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 890W Tc N-Channel 220m Ω @ 16A, 10V 6V @ 4mA 4075pF @ 25V 130nC @ 10V 32A Tc 1000V 10V ±30V
IXTY4N65X2 IXTY4N65X2 IXYS 2.3047
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0.00000000 download 15 Weeks Surface Mount Tube 2015 Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 80W Tc 4A N-Channel 850m Ω @ 2A, 10V 5V @ 250μA 455pF @ 25V 8.3nC @ 10V 4A Tc 650V 10V ±30V
IXTH44P15T IXTH44P15T IXYS 6.5770
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0.00000000 download 28 Weeks Through Hole Tube 2010 TrenchP™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant AVALANCHE RATED TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 298W Tc 44A SWITCHING 0.065Ohm 150V SILICON P-Channel 65m Ω @ 500mA, 10V 4V @ 250μA 13400pF @ 25V 175nC @ 10V 44A Tc 150V 130A 1000 mJ 10V ±15V
IXFH1837 IXFH1837 IXYS 0.0000
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0.00000000 Obsolete 1 (Unlimited)
IXFA90N20X3TRL IXFA90N20X3TRL IXYS 0.0000
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0.00000000 19 Weeks Active TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 390W Tc N-Channel 12.8m Ω @ 45A, 10V 4.5V @ 1.5mA 5420pF @ 25V 78nC @ 10V 90A Tc 200V 10V ±20V
IXTC36P15P IXTC36P15P IXYS 0.0000
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0.00000000 download Through Hole Tube 2011 PolarP™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant AVALANCHE RATED, UL RECOGNIZED ISOPLUS220™ Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSIP-T3 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE ISOLATED 150W Tc 22A SWITCHING 0.12Ohm 150V SILICON P-Channel 120m Ω @ 18A, 10V 5V @ 250μA 2950pF @ 25V 55nC @ 10V 22A Tc 150V 100A 1500 mJ 10V ±20V
  • IXTP110N12T2
    IXTP110N12T2 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 14m Ω @ 55A, 10V ±20V 6570pF @ 25V 120nC @ 10V 120V TO-220-3

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  • IXTT12N150HV-TRL
    IXTT12N150HV-TRL IXYS

    MOSFET (Metal Oxide) N-Channel 2.2 Ω @ 6A, 10V ±30V 3720pF @ 25V 106nC @ 10V 1500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

    Price: 0.0000

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  • IXTH180N085T
    IXTH180N085T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 5.5m Ω @ 25A, 10V ±20V 7500pF @ 25V 170nC @ 10V TO-247-3

    Price: 0.0000

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  • IXTX240N075L2
    IXTX240N075L2 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 7m Ω @ 120A, 10V ±20V 19000pF @ 25V 546nC @ 10V 75V TO-247-3

    Price: 29.5281

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  • IXFT96N20P
    IXFT96N20P IXYS

    MOSFET (Metal Oxide) N-Channel Tube 24m Ω @ 500mA, 10V ±20V 4800pF @ 25V 145nC @ 10V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

    Price: 9.0122

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  • IXFY8N65X2
    IXFY8N65X2 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 450m Ω @ 4A, 10V ±30V 790pF @ 25V 11nC @ 10V 650V TO-252-3, DPak (2 Leads + Tab), SC-63

    Price: 0.0000

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  • IXFX48N60Q3
    IXFX48N60Q3 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 140m Ω @ 24A, 10V ±30V 7020pF @ 25V 140nC @ 10V TO-247-3

    Price: 0.0000

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  • IXTH240N055T
    IXTH240N055T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 3.6m Ω @ 25A, 10V ±20V 7600pF @ 25V 170nC @ 10V TO-247-3

    Price: 0.0000

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  • IXTH140N075L2
    IXTH140N075L2 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 11m Ω @ 70A, 10V ±20V 9300pF @ 25V 275nC @ 10V 75V TO-247-3

    Price: 20.0987

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  • IXFH58N20Q
    IXFH58N20Q IXYS

    MOSFET (Metal Oxide) N-Channel Tube 40m Ω @ 29A, 10V ±20V 3600pF @ 25V 140nC @ 10V TO-247-3

    Price: 3.9071

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  • IXFA10N60P-TRL
    IXFA10N60P-TRL IXYS

    Tape & Reel (TR) 600V TO-263-3

    Price: 0.0000

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  • DHG30IM600PC
    DHG30IM600PC IXYS

    RECTIFIER DIODE Diode Rectifier 2-Termination TO-263

    Price: 0.0000

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  • IXFQ60N25X3
    IXFQ60N25X3 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 23m Ω @ 30A, 10V ±20V 3610pF @ 25V 50nC @ 10V 250V TO-3P-3, SC-65-3

    Price: 8.7798

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  • DSEP29-06BS
    DSEP29-06BS IXYS

    Standard Diode Rectifier Fast Recovery =< 500ns, > 200mA (Io) 2.52V @ 30A -55°C~175°C 250μA @ 600V Tape & Reel (TR) TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount

    Price: 0.0000

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  • IXFH60N25Q
    IXFH60N25Q IXYS

    MOSFET (Metal Oxide) N-Channel Tube 47m Ω @ 500mA, 10V ±20V 5100pF @ 25V 180nC @ 10V TO-247-3

    Price: 0.0000

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  • IXTA180N085T7
    IXTA180N085T7 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 5.5m Ω @ 25A, 10V ±20V 7500pF @ 25V 170nC @ 10V TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

    Price: 0.0000

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  • IXTP76P10T
    IXTP76P10T IXYS

    MOSFET (Metal Oxide) P-Channel Tube 25m Ω @ 500mA, 10V ±15V 13700pF @ 25V 197nC @ 10V 100V TO-220-3

    Price: 4.7908

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  • IXTA4N65X2
    IXTA4N65X2 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 850m Ω @ 2A, 10V ±30V 455pF @ 25V 8.3nC @ 10V 650V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 0.0000

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  • IXFR48N50Q
    IXFR48N50Q IXYS

    MOSFET (Metal Oxide) N-Channel Tube 110m Ω @ 24A, 10V ±20V 7000pF @ 25V 190nC @ 10V ISOPLUS247™

    Price: 0.0000

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  • IXTA140N055T2
    IXTA140N055T2 IXYS

    MOSFET (Metal Oxide) N-Channel 5.4m Ω @ 50A, 10V ±20V 4760pF @ 25V 82nC @ 10V 55V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 0.0000

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  • IXFX30N50Q
    IXFX30N50Q IXYS

    MOSFET (Metal Oxide) N-Channel Tube 160m Ω @ 15A, 10V ±20V 3950pF @ 25V 150nC @ 10V TO-247-3

    Price: 0.0000

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  • FMD21-05QC
    FMD21-05QC IXYS

    MOSFET (Metal Oxide) N-Channel Tube 220m Ω @ 15A, 10V ±20V 95nC @ 10V i4-Pac™-5

    Price: 0.0000

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  • IXFX62N25
    IXFX62N25 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 35m Ω @ 31A, 10V ±20V 6600pF @ 25V 240nC @ 10V TO-247-3

    Price: 0.0000

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  • IXTM1316
    IXTM1316 IXYS

    Price: 0.0000

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  • IXFH32N100X
    IXFH32N100X IXYS

    MOSFET (Metal Oxide) N-Channel 220m Ω @ 16A, 10V ±30V 4075pF @ 25V 130nC @ 10V 1000V TO-247-3

    Price: 0.0000

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  • IXTY4N65X2
    IXTY4N65X2 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 850m Ω @ 2A, 10V ±30V 455pF @ 25V 8.3nC @ 10V 650V TO-252-3, DPak (2 Leads + Tab), SC-63

    Price: 2.3047

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  • IXTH44P15T
    IXTH44P15T IXYS

    MOSFET (Metal Oxide) P-Channel Tube 65m Ω @ 500mA, 10V ±15V 13400pF @ 25V 175nC @ 10V 150V TO-247-3

    Price: 6.5770

    RFQ
  • IXFH1837
    IXFH1837 IXYS

    Price: 0.0000

    RFQ
  • IXFA90N20X3TRL
    IXFA90N20X3TRL IXYS

    MOSFET (Metal Oxide) N-Channel 12.8m Ω @ 45A, 10V ±20V 5420pF @ 25V 78nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 0.0000

    RFQ
  • IXTC36P15P
    IXTC36P15P IXYS

    MOSFET (Metal Oxide) P-Channel Tube 120m Ω @ 18A, 10V ±20V 2950pF @ 25V 55nC @ 10V 150V ISOPLUS220™

    Price: 0.0000

    RFQ
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