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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Reference Standard Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Application Number of Phases Rep Pk Reverse Voltage-Max JEDEC-95 Code Non-rep Pk Forward Current-Max Forward Voltage Case Connection Max Surge Current Element Configuration Power Dissipation Turn On Delay Time Max Reverse Leakage Current Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Non-Repetitive Surge Current Diode Configuration Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Current-Max Reverse Recovery Time Power Dissipation-Max Reverse Voltage Reverse Test Voltage Reverse Recovery Time-Max Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
DSA30I100PA DSA30I100PA IXYS 0.0000
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0.00000000 download 28 Weeks Through Hole Tube 2008 yes Active 1 (Unlimited) 2 EAR99 175°C -55°C ROHS3 Compliant 2 HIGH RELIABILITY,FREEWHEELING DIODE, LOW NOISE TO-220-2 Through Hole 8541.10.00.80 NOT SPECIFIED NOT SPECIFIED 3 Rectifier Diodes Not Qualified SILICON 1 Schottky SOFT RECOVERY 1 1.15V CATHODE 230A Single 900μA Fast Recovery =< 500ns, > 200mA (Io) 900μA @ 100V 950mV @ 30A -55°C~175°C 100V 30A 230A
DGS20-018A DGS20-018A IXYS 0.0000
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0.00000000 download Through Hole Tube 2004 Obsolete 1 (Unlimited) 2 EAR99 175°C -55°C RoHS Compliant TO-220-2 Through Hole 8541.10.00.80 e3 Matte Tin (Sn) 260 35 3 R-PSFM-T2 Not Qualified GALLIUM ARSENIDE 1 Schottky GENERAL PURPOSE 1 TO-220AC CATHODE 30A Single 2mA Fast Recovery =< 500ns, > 200mA (Io) 2mA @ 180V 1V @ 7.5A -55°C~175°C 180V 23A 0.014μs
DAA10EM1800PZ-TRL DAA10EM1800PZ-TRL IXYS 0.0000
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0.00000000 20 Weeks Tape & Reel (TR) Active 2 LOW LEAKAGE CURRENT, PD-CASE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount SINGLE GULL WING YES R-PSSO-G2 150°C IEC-60747 SILICON 1 SINGLE Avalanche 10A GENERAL PURPOSE 1 1800V 140A ANODE Standard Recovery >500ns, > 200mA (Io) 10μA @ 1800V 1.21V @ 10A -55°C~175°C 1800V 10A 10μA 100W 4pF @ 400V 1MHz
DSSK28-0045BS DSSK28-0045BS IXYS 0.0000
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0.00000000 Surface Mount yes 2 EAR99 150°C -55°C RoHS Compliant 3 FREEWHEELING DIODE, HIGH RELIABILITY, LOW NOISE TO-263-3 SCHOTTKY 8541.10.00.80 e3 Matte Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 3 R-PSSO-G2 Rectifier Diodes Not Qualified SILICON 2 RECTIFIER DIODE GENERAL PURPOSE 1 480mV 320A Common Cathode 20mA 45V 15A 320A 90W
IXTY1N80P IXTY1N80P IXYS 0.0000
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0.00000000 download 24 Weeks Surface Mount Tube 2009 Polar™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant 3 AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE Pure Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 42W 42W Tc 1A SWITCHING 800V SILICON N-Channel 14 Ω @ 500mA, 10V 4V @ 50μA 250pF @ 25V 9nC @ 10V 20V 1A 1A Tc 800V 2A 75 mJ 10V ±20V
DFE240X600NA DFE240X600NA IXYS 0.0000
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0.00000000 28 Weeks DFE240X600NA Active 4 FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, PD-CASE SOT-227-4, miniBLOC Chassis Mount AVALANCHE UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED NO R-PUFM-X4 125°C IEC-60747 SILICON 2 Standard FAST SOFT RECOVERY 1 600V 1200A ISOLATED Fast Recovery =< 500ns, > 200mA (Io) 3mA @ 600V 1.3V @ 120A -40°C~150°C 2 Independent 600V 120A 3000μA 80ns 312W
HTZ130B33K HTZ130B33K IXYS 0.0000
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0.00000000 download Chassis Mount, Screw Bulk 2002 yes Obsolete 1 (Unlimited) 3 EAR99 180°C -40°C RoHS Compliant 3 Module Chassis Mount 8541.10.00.80 UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED HTZ130 3 Not Qualified SILICON 2 Standard 1A 24V Standard Recovery >500ns, > 200mA (Io) 500μA @ 33000V 24V @ 2A 33kV 1A 100A 1 Pair Series Connection 33000V 33kV
IXTA2R4N120P IXTA2R4N120P IXYS 2.2459
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0.00000000 download 28 Weeks Surface Mount Tube 2008 Polar™ yes Active 1 (Unlimited) 2 ROHS3 Compliant Lead Free AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 125W 125W Tc 2.4A SWITCHING 70 ns SILICON N-Channel 7.5 Ω @ 500mA, 10V 4.5V @ 250μA 1207pF @ 25V 37nC @ 10V 25ns 32 ns 20V 1.2kV 2.4A Tc 1200V 6A 200 mJ 10V ±20V
IXFA6N120P-TRL IXFA6N120P-TRL IXYS 0.0000
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0.00000000 download Tape & Reel (TR) HiPerFET™, PolarP2™ Active 1 (Unlimited) ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 250W Tc N-Channel 2.4 Ω @ 500mA, 10V 5V @ 1mA 2830pF @ 25V 92nC @ 10V 6A Tc 1200V 10V ±30V
DSEI2X30-12P DSEI2X30-12P IXYS 0.0000
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0.00000000 download Chassis Mount, Screw Bulk 2007 yes Obsolete 1 (Unlimited) 8 EAR99 150°C -40°C RoHS Compliant 8 LOW NOISE, FREE WHEELING DIODE, SNUBBER DIODE ECO-PAC1 Chassis Mount UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED DSEI2X 8 Other Diodes Not Qualified SILICON 2 Standard 1 2.55V ISOLATED Fast Recovery =< 500ns, > 200mA (Io) 750μA @ 1200V 2.55V @ 30A 1.2kV 28A 200A 2 Independent 1200V 7000μA 50 ns 100W 960V
IXFY4N60P3 IXFY4N60P3 IXYS 0.0000
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0.00000000 download 12 Weeks Surface Mount Tube 2011 HiPerFET™, Polar3™ Obsolete 1 (Unlimited) 2 ROHS3 Compliant AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING 4 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 114W Tc 4A SWITCHING 600V SILICON N-Channel 2.2 Ω @ 2A, 10V 5V @ 250μA 365pF @ 25V 6.9nC @ 10V 4A 4A Tc 600V 8A 200 mJ 10V ±30V
IXTH44N25L2 IXTH44N25L2 IXYS 0.0000
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0.00000000 28 Weeks Active TO-247-3 compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 400W Tc N-Channel 75m Ω @ 22A, 10V 4.5V @ 250μA 5740pF @ 25V 256nC @ 10V 44A Tc 250V 10V ±20V
DMA50P1200HB DMA50P1200HB IXYS 0.0000
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0.00000000 20 Weeks Tube Active 3 EAR99 LOW LEAKAGE CURRENT, PD-CASE TO-247-3 Through Hole 8541.10.00.80 SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 150°C IEC-60747 SILICON 2 SERIES CONNECTED, CENTER TAP, 2 ELEMENTS Standard 50A GENERAL PURPOSE 1 1200V TO-247AD 595A ANODE AND CATHODE Standard Recovery >500ns, > 200mA (Io) 40μA @ 1200V 1.3V @ 50A -55°C~175°C 1200V 50A 40μA 330W 19pF @ 400V 1MHz
IXTP80N10T IXTP80N10T IXYS 2.8821
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0.00000000 download 24 Weeks Through Hole Tube 2009 TrenchMV™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free AVALANCHE RATED TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 1 TO-220AB DRAIN Single 230W 230W Tc 80A SWITCHING 0.014Ohm 40 ns SILICON N-Channel 14m Ω @ 25A, 10V 5V @ 100μA 3040pF @ 25V 60nC @ 10V 54ns 48 ns 20V 100V 80A Tc 220A 400 mJ 10V ±20V
IXFH13N100 IXFH13N100 IXYS 0.0000
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0.00000000 download Through Hole Tube 2000 HiPerFET™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 AVALANCHE RATED TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 DRAIN Single 300W 300W Tc 12.5A SWITCHING 0.9Ohm 62 ns SILICON N-Channel 900m Ω @ 500mA, 10V 4.5V @ 4mA 4000pF @ 25V 155nC @ 10V 33ns 32 ns 20V 1kV 12.5A Tc 1000V 50A 10V ±20V
HTZ240F16K HTZ240F16K IXYS 0.0000
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0.00000000 download Chassis Mount, Screw Bulk 2002 yes Active 1 (Unlimited) 3 EAR99 180°C -40°C ROHS3 Compliant 3 Module Chassis Mount 8541.10.00.80 UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED HTZ240 3 Not Qualified SILICON 2 Standard HIGH VOLTAGE 1 10V Standard Recovery >500ns, > 200mA (Io) 500μA @ 16800V 10V @ 2A 16kV 1.7A 100A 1 Pair Series Connection 16000V 16kV
IXFA76N15T2-TRL IXFA76N15T2-TRL IXYS 0.0000
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0.00000000 30 Weeks Active TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 350W Tc N-Channel 22m Ω @ 38A, 10V 4.5V @ 250μA 5800pF @ 25V 97nC @ 10V 76A Tc 150V 10V ±20V
IXFX200N10P IXFX200N10P IXYS 0.0000
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0.00000000 download 30 Weeks Through Hole Tube 2006 HiPerFET™, PolarP2™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 AVALANCHE RATED TO-247-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 DRAIN Single 830W 830W Tc 200A SWITCHING 0.0075Ohm 150 ns SILICON N-Channel 7.5m Ω @ 100A, 10V 5V @ 8mA 7600pF @ 25V 235nC @ 10V 35ns 90 ns 20V 100V 200A Tc 400A 4000 mJ 10V ±20V
IXTP12N65X2 IXTP12N65X2 IXYS 0.0000
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0.00000000 download 15 Weeks Through Hole Tube 2015 Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-220-3 not_compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 180W Tc 12A N-Channel 300m Ω @ 6A, 10V 5V @ 250μA 1100pF @ 25V 17nC @ 10V 12A Tc 650V 10V ±30V
DPG10IM300UC-TUB DPG10IM300UC-TUB IXYS 1.7204
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0.00000000 20 Weeks Tube Active TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount Standard Fast Recovery =< 500ns, > 200mA (Io) 1μA @ 300V 1.27V @ 10A -55°C~175°C 300V 10A 35ns 15pF @ 150V 1MHz
GMM3X60-015X2-SMD GMM3X60-015X2-SMD IXYS 0.0000
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0.00000000 download Surface Mount Tray 2012 Active 1 (Unlimited) 24 EAR99 ROHS3 Compliant ISOPLUS-DIL™ Surface Mount -55°C~175°C TJ ENHANCEMENT MODE e2 TIN SILVER DUAL GULL WING NOT SPECIFIED NOT SPECIFIED R-PDSO-G24 FET General Purpose Power 6 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED 50A SWITCHING 0.024Ohm 150V METAL-OXIDE SEMICONDUCTOR SILICON 6 N-Channel (3-Phase Bridge) 24m Ω @ 38A, 10V 4.5V @ 1mA 5800pF @ 25V 97nC @ 10V Standard 57A 150V
DSA15IM45UC-TRL DSA15IM45UC-TRL IXYS 0.0000
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0.00000000 20 Weeks Tape & Reel (TR) Active 2 HIGH RELIABILITY, LOW NOISE, PD-CASE, FREE WHEELIND DIODE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount SINGLE GULL WING YES R-PSSO-G2 150°C IEC-60747 SILICON 1 SINGLE Schottky 15A SOFT RECOVERY 1 45V TO-252AA 300A CATHODE Fast Recovery =< 500ns, > 200mA (Io) 250μA @ 45V 750mV @ 15A -55°C~175°C 45V 15A 250μA 75W 227pF @ 4V 1MHz
DSI30-08AS-TUB DSI30-08AS-TUB IXYS 0.0000
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0.00000000 download Surface Mount Tube 2015 Active 3 (168 Hours) 2 EAR99 ROHS3 Compliant LOW LEAKAGE CURRENT, PD-CASE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB unknown Surface Mount SINGLE GULL WING DSI30-08 R-PSSO-G2 175°C IEC-60747 SILICON 1 SINGLE Standard GENERAL PURPOSE 1 275A CATHODE Standard Recovery >500ns, > 200mA (Io) 40μA @ 800V 1.29V @ 30A -40°C~175°C 800V 30A 800V 40μA 160W 10pF @ 400V 1MHz
IXFH80N10Q IXFH80N10Q IXYS 2.0541
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0.00000000 download 8 Weeks Through Hole Tube 2000 HiPerFET™ yes Obsolete Not Applicable 3 EAR99 RoHS Compliant Lead Free 80A No 3 AVALANCHE RATED TO-247-3 150mOhm Through Hole -55°C~150°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) 3 1 DRAIN Single 360W 360W Tc 80A SWITCHING 68 ns SILICON N-Channel 15m Ω @ 40A, 10V 4V @ 4mA 4500pF @ 25V 180nC @ 10V 70ns 30 ns 20V 100V 80A Tc 10V ±20V
IXTT50P10 IXTT50P10 IXYS 0.0000
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0.00000000 download 24 Weeks Surface Mount Tube 2008 yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free 3 AVALANCHE RATED TO-268-3, D3Pak (2 Leads + Tab), TO-268AA unknown 55MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 PURE TIN GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Other Transistors Not Qualified 1 DRAIN Single 300W 300W Tc 50A SWITCHING 86 ns SILICON P-Channel 55m Ω @ 25A, 10V 5V @ 250μA 4350pF @ 25V 140nC @ 10V 39ns 38 ns 20V -100V 50A Tc 100V 200A 10V ±20V
IXFF24N100 IXFF24N100 IXYS 0.0000
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0.00000000 download Through Hole Tube 2006 HiPerFET™ Obsolete 1 (Unlimited) 3 RoHS Compliant 3 HIGH VOLTAGE, HIGH RELIABILITY i4-Pac™-5 (3 Leads) Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 5 FET General Purpose Power Not Qualified 1 ISOLATED Single 22A SWITCHING 75 ns SILICON N-Channel 390m Ω @ 15A, 10V 5V @ 8mA 250nC @ 10V 20V 1kV 22A Tc 1000V 120A 10V ±20V
IXFH6N120 IXFH6N120 IXYS 0.0000
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0.00000000 download 30 Weeks Through Hole Tube 2005 yes Active 1 (Unlimited) 3 ROHS3 Compliant 3 AVALANCHE RATED TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 TO-247AD DRAIN Single 300W 300W Tc 6A SWITCHING 42 ns SILICON N-Channel 2.6 Ω @ 3A, 10V 5V @ 2.5mA 1950pF @ 25V 56nC @ 10V 33ns 18 ns 20V 1.2kV 6A 6A Tc 1200V 24A 500 mJ 10V ±20V
IXFK32N100X IXFK32N100X IXYS 17.5023
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0.00000000 download 19 Weeks HiPerFET™ Active 1 (Unlimited) ROHS3 Compliant TO-264-3, TO-264AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 890W Tc N-Channel 220m Ω @ 16A, 10V 6V @ 4mA 4075pF @ 25V 130nC @ 10V 32A Tc 1000V 10V ±30V
DPF30P600HR DPF30P600HR IXYS 0.0000
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0.00000000 28 Weeks Tube Active 3 EAR99 FREE WHEELING DIODE, LOW LEAKAGE CURRENT, PD-CASE, SNUBBER DIODE, UL RECOGNIZED TO-247-3 Through Hole AVALANCHE SINGLE NO R-PSFM-T3 175°C IEC-60747 SILICON 2 SERIES CONNECTED, CENTER TAP, 2 ELEMENTS Standard FAST SOFT RECOVERY 1 600V 200A ISOLATED Fast Recovery =< 500ns, > 200mA (Io) 500μA @ 600V 1.62V @ 30A -55°C~175°C 600V 30A 500μA 35ns 165W 26pF @ 400V 1MHz
IXFP22N60P3 IXFP22N60P3 IXYS 1.9071
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0.00000000 download 26 Weeks Through Hole Tube 2011 HiPerFET™, Polar3™ Active 1 (Unlimited) 3 10.66mm ROHS3 Compliant 3 AVALANCHE RATED TO-220-3 unknown 16mm 4.83mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 3 FET General Purpose Power Not Qualified 1 TO-220AB DRAIN Single 500W 28 ns 500W Tc 22A SWITCHING 54 ns SILICON N-Channel 360m Ω @ 11A, 10V 5V @ 1.5mA 2600pF @ 25V 38nC @ 10V 17ns 19 ns 30V 600V 22A Tc 55A 400 mJ 10V ±30V
  • DSA30I100PA
    DSA30I100PA IXYS

    Schottky Diode Rectifier Fast Recovery =< 500ns, > 200mA (Io) 950mV @ 30A -55°C~175°C 900μA @ 100V 2-Termination Tube TO-220-2 Through Hole

    Price: 0.0000

    RFQ
  • DGS20-018A
    DGS20-018A IXYS

    Schottky Diode Rectifier Fast Recovery =< 500ns, > 200mA (Io) 1V @ 7.5A -55°C~175°C 2mA @ 180V 2-Termination Tube TO-220-2 Through Hole

    Price: 0.0000

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  • DAA10EM1800PZ-TRL
    DAA10EM1800PZ-TRL IXYS

    Avalanche Diode Rectifier Standard Recovery >500ns, > 200mA (Io) 1.21V @ 10A -55°C~175°C 10μA @ 1800V 2-Termination Tape & Reel (TR) TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount

    Price: 0.0000

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  • DSSK28-0045BS
    DSSK28-0045BS IXYS

    RECTIFIER DIODE Rectifier Diode 15A 45V-DC 2-Element TO-263-3

    Price: 0.0000

    RFQ
  • IXTY1N80P
    IXTY1N80P IXYS

    MOSFET (Metal Oxide) N-Channel Tube 14 Ω @ 500mA, 10V ±20V 250pF @ 25V 9nC @ 10V 800V TO-252-3, DPak (2 Leads + Tab), SC-63

    Price: 0.0000

    RFQ
  • DFE240X600NA
    DFE240X600NA IXYS

    Standard Rectifier Diode 2 Independent Fast Recovery =< 500ns, > 200mA (Io) -40°C~150°C 2-Element SOT-227-4, miniBLOC Chassis Mount

    Price: 0.0000

    RFQ
  • HTZ130B33K
    HTZ130B33K IXYS

    Standard Rectifier Diode 1 Pair Series Connection Standard Recovery >500ns, > 200mA (Io) 1A 33kV-DC 2-Element Module Chassis Mount

    Price: 0.0000

    RFQ
  • IXTA2R4N120P
    IXTA2R4N120P IXYS

    MOSFET (Metal Oxide) N-Channel Tube 7.5 Ω @ 500mA, 10V ±20V 1207pF @ 25V 37nC @ 10V 1200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 2.2459

    RFQ
  • IXFA6N120P-TRL
    IXFA6N120P-TRL IXYS

    MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.4 Ω @ 500mA, 10V ±30V 2830pF @ 25V 92nC @ 10V 1200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 0.0000

    RFQ
  • DSEI2X30-12P
    DSEI2X30-12P IXYS

    Standard Rectifier Diode 2 Independent Fast Recovery =< 500ns, > 200mA (Io) 28A 1.2kV-DC 2-Element ECO-PAC1 Chassis Mount

    Price: 0.0000

    RFQ
  • IXFY4N60P3
    IXFY4N60P3 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 2.2 Ω @ 2A, 10V ±30V 365pF @ 25V 6.9nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63

    Price: 0.0000

    RFQ
  • IXTH44N25L2
    IXTH44N25L2 IXYS

    MOSFET (Metal Oxide) N-Channel 75m Ω @ 22A, 10V ±20V 5740pF @ 25V 256nC @ 10V 250V TO-247-3

    Price: 0.0000

    RFQ
  • DMA50P1200HB
    DMA50P1200HB IXYS

    Standard Diode Rectifier Standard Recovery >500ns, > 200mA (Io) 1.3V @ 50A -55°C~175°C 40μA @ 1200V 3-Termination Tube TO-247-3 Through Hole

    Price: 0.0000

    RFQ
  • IXTP80N10T
    IXTP80N10T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 14m Ω @ 25A, 10V ±20V 3040pF @ 25V 60nC @ 10V TO-220-3

    Price: 2.8821

    RFQ
  • IXFH13N100
    IXFH13N100 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 900m Ω @ 500mA, 10V ±20V 4000pF @ 25V 155nC @ 10V 1000V TO-247-3

    Price: 0.0000

    RFQ
  • HTZ240F16K
    HTZ240F16K IXYS

    Standard Rectifier Diode 1 Pair Series Connection Standard Recovery >500ns, > 200mA (Io) 1.7A 16kV-DC 2-Element Module Chassis Mount

    Price: 0.0000

    RFQ
  • IXFA76N15T2-TRL
    IXFA76N15T2-TRL IXYS

    MOSFET (Metal Oxide) N-Channel 22m Ω @ 38A, 10V ±20V 5800pF @ 25V 97nC @ 10V 150V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 0.0000

    RFQ
  • IXFX200N10P
    IXFX200N10P IXYS

    MOSFET (Metal Oxide) N-Channel Tube 7.5m Ω @ 100A, 10V ±20V 7600pF @ 25V 235nC @ 10V TO-247-3

    Price: 0.0000

    RFQ
  • IXTP12N65X2
    IXTP12N65X2 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 300m Ω @ 6A, 10V ±30V 1100pF @ 25V 17nC @ 10V 650V TO-220-3

    Price: 0.0000

    RFQ
  • DPG10IM300UC-TUB
    DPG10IM300UC-TUB IXYS

    Standard Diode Rectifier Fast Recovery =< 500ns, > 200mA (Io) 1.27V @ 10A -55°C~175°C 1μA @ 300V Tube TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount

    Price: 1.7204

    RFQ
  • GMM3X60-015X2-SMD
    GMM3X60-015X2-SMD IXYS

    GMM3X60-015X2-SMD datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from IXYS stock available at Utmel

    Price: 0.0000

    RFQ
  • DSA15IM45UC-TRL
    DSA15IM45UC-TRL IXYS

    Schottky Diode Rectifier Fast Recovery =< 500ns, > 200mA (Io) 750mV @ 15A -55°C~175°C 250μA @ 45V 2-Termination Tape & Reel (TR) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount

    Price: 0.0000

    RFQ
  • DSI30-08AS-TUB
    DSI30-08AS-TUB IXYS

    Standard Diode Rectifier Standard Recovery >500ns, > 200mA (Io) 1.29V @ 30A -40°C~175°C 40μA @ 800V 2-Termination Tube TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount

    Price: 0.0000

    RFQ
  • IXFH80N10Q
    IXFH80N10Q IXYS

    MOSFET (Metal Oxide) N-Channel Tube 15m Ω @ 40A, 10V ±20V 4500pF @ 25V 180nC @ 10V TO-247-3

    Price: 2.0541

    RFQ
  • IXTT50P10
    IXTT50P10 IXYS

    MOSFET (Metal Oxide) P-Channel Tube 55m Ω @ 25A, 10V ±20V 4350pF @ 25V 140nC @ 10V 100V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

    Price: 0.0000

    RFQ
  • IXFF24N100
    IXFF24N100 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 390m Ω @ 15A, 10V ±20V 250nC @ 10V 1000V i4-Pac™-5 (3 Leads)

    Price: 0.0000

    RFQ
  • IXFH6N120
    IXFH6N120 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 2.6 Ω @ 3A, 10V ±20V 1950pF @ 25V 56nC @ 10V 1200V TO-247-3

    Price: 0.0000

    RFQ
  • IXFK32N100X
    IXFK32N100X IXYS

    MOSFET (Metal Oxide) N-Channel 220m Ω @ 16A, 10V ±30V 4075pF @ 25V 130nC @ 10V 1000V TO-264-3, TO-264AA

    Price: 17.5023

    RFQ
  • DPF30P600HR
    DPF30P600HR IXYS

    Standard Diode Rectifier Fast Recovery =< 500ns, > 200mA (Io) 1.62V @ 30A -55°C~175°C 500μA @ 600V 3-Termination Tube TO-247-3 Through Hole

    Price: 0.0000

    RFQ
  • IXFP22N60P3
    IXFP22N60P3 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 360m Ω @ 11A, 10V ±30V 2600pF @ 25V 38nC @ 10V TO-220-3

    Price: 1.9071

    RFQ
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