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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Input Type HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Max Power Dissipation Power - Max Reference Standard Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Application Number of Phases Rep Pk Reverse Voltage-Max JEDEC-95 Code Non-rep Pk Forward Current-Max Forward Current Forward Voltage Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Max Surge Current Element Configuration Power Dissipation Turn On Delay Time Max Reverse Leakage Current Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Diode Configuration Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Current-Max Reverse Recovery Time Power Dissipation-Max Reverse Voltage Recovery Time Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Collector Emitter Saturation Voltage Turn On Time Vce(on) (Max) @ Vge, Ic Turn Off Time-Nom (toff) IGBT Type Gate-Emitter Voltage-Max Gate-Emitter Thr Voltage-Max Test Condition Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy Voltage - Peak Reverse (Max)
DNA30ER2200IY DNA30ER2200IY IXYS 4.3632
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0.00000000 28 Weeks Tube Active 2 EAR99 LOW LEAKAGE CURRENT TO-262-2, I2Pak Through Hole 8541.10.00.80 SINGLE NOT SPECIFIED NOT SPECIFIED 2 NO R-PSIP-T2 175°C Rectifier Diodes SILICON 1 SINGLE Standard 30A HIGH VOLTAGE 1 2200V 340A ANODE Standard Recovery >500ns, > 200mA (Io) 40μA @ 2200V 1.26V @ 30A -55°C~175°C 2200V 30A 40μA 210W 7pF @ 700V 1MHz
IXFB70N100X IXFB70N100X IXYS 0.0000
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0.00000000 download 19 Weeks HiPerFET™ Active 1 (Unlimited) ROHS3 Compliant TO-264-3, TO-264AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 1785W Tc N-Channel 89m Ω @ 35A, 10V 6V @ 8mA 9160pF @ 25V 350nC @ 10V 70A Tc 1000V 10V ±30V
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0.00000000 Surface Mount Tube Active 1 (Unlimited) ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount MOSFET (Metal Oxide) 36A N-Channel 36A Tc 200V
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0.00000000 download 30 Weeks Tape & Reel (TR) TrenchT2™ Active 1 (Unlimited) ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 480W Tc N-Channel 13m Ω @ 500mA, 10V 4.5V @ 250μA 8600pF @ 25V 150nC @ 10V 110A Tc 150V 10V ±20V
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0.00000000 download 32 Weeks Through Hole Tube 2009 CoolMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free AVALANCHE RATED, UL RECOGNIZED TO-220-3 Full Pack, Isolated Tab Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 PURE TIN NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 1 TO-220AB Single 34W 8.5A SWITCHING 0.165Ohm 50 ns SILICON N-Channel 165m Ω @ 10A, 10V 3.5V @ 790μA 2000pF @ 100V 52nC @ 10V 5ns 5 ns 20V 600V Super Junction 8.5A Tc 522 mJ 10V ±20V
DSEP29-06AS-TUBE DSEP29-06AS-TUBE IXYS 3.0225
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0.00000000 Surface Mount RoHS Compliant TO-263-3 600V 30A 35 ns
IXTH16P60P IXTH16P60P IXYS 0.0000
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0.00000000 download 28 Weeks Through Hole Tube 2008 PolarP™ yes Active 1 (Unlimited) 2 ROHS3 Compliant No AVALANCHE RATED TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) SINGLE GULL WING 4 R-PSSO-G2 Other Transistors 1 SINGLE WITH BUILT-IN DIODE TO-268AA DRAIN 460W 460W Tc 16A SWITCHING 0.72Ohm 600V SILICON P-Channel 720m Ω @ 500mA, 10V 4.5V @ 250μA 5120pF @ 25V 92nC @ 10V 16A Tc 600V 48A 2500 mJ 10V ±20V
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0.00000000 download 28 Weeks Through Hole Tube 2009 PolarP™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No AVALANCHE RATED TO-264-3, TO-264AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) 3 R-PSFM-T3 Other Transistors 1 DRAIN Single 890W 890W Tc 90A SWITCHING 0.044Ohm SILICON P-Channel 44m Ω @ 500mA, 10V 4V @ 1mA 12000pF @ 25V 205nC @ 10V 20V -200V 90A Tc 200V 270A 3500 mJ 10V ±20V
IXFJ32N50 IXFJ32N50 IXYS 0.0000
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0.00000000 yes Obsolete 1 (Unlimited) 3 RoHS Compliant AVALANCHE RATED compliant ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE THROUGH-HOLE NOT SPECIFIED NOT SPECIFIED 4 NO R-PSIP-T3 150°C FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-268AA DRAIN N-CHANNEL 360W SWITCHING 0.15Ohm 500V METAL-OXIDE SEMICONDUCTOR SILICON 32A 128A 1500 mJ
DPG10I400PA DPG10I400PA IXYS 1.8262
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0.00000000 download 28 Weeks Through Hole Tube 2008 HiPerFRED™ yes Active 1 (Unlimited) 2 EAR99 175°C -55°C ROHS3 Compliant 2 FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE TO-220-2 Through Hole 2.299997g 8541.10.00.80 NOT SPECIFIED NOT SPECIFIED 3 Rectifier Diodes Not Qualified SILICON 1 Standard FAST SOFT RECOVERY 1 10A 1.04V CATHODE 100A Single Fast Recovery =< 500ns, > 200mA (Io) 1μA @ 400V 1.32V @ 10A -55°C~175°C 400V 10A 400V 100A 45 ns 45 ns
IXTP27N20T IXTP27N20T IXYS 0.0000
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0.00000000 Through Hole Tube Active 1 (Unlimited) ROHS3 Compliant TO-220-3 Through Hole MOSFET (Metal Oxide) 27A N-Channel 27A Tc 200V
MMIX1F210N30P3 MMIX1F210N30P3 IXYS 0.0000
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0.00000000 Surface Mount Tube HiPerFET™, Polar3™ Active 1 (Unlimited) ROHS3 Compliant 24-PowerSMD, 21 Leads Surface Mount MOSFET (Metal Oxide) ENHANCEMENT MODE 150°C FET General Purpose Power 520W Single 108A N-Channel 16m Ω @ 105A, 10V 5V @ 8mA 16200pF @ 25V 108A Tc 300V
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0.00000000 download 30 Weeks Through Hole Tube 2012 HiPerFET™, Polar3™ Active 1 (Unlimited) 16.13mm ROHS3 Compliant 247 TO-247-3 21.34mm 5.21mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) Single 26 ns 1130W Tc 120A 60 ns N-Channel 27m Ω @ 60A, 10V 5V @ 4mA 8630pF @ 25V 150nC @ 10V 20V 120A Tc 300V 10V ±20V
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0.00000000 download Through Hole Tube 2007 yes Active 1 (Unlimited) 3 16.26mm ROHS3 Compliant 3 AVALANCHE RATED TO-247-3 21.46mm 5.3mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 TO-247AD DRAIN Single 400W 30 ns 400W Tc 12A SWITCHING 110 ns SILICON N-Channel 1.3 Ω @ 500mA, 20V 5V @ 250μA 2500pF @ 25V 155nC @ 20V 55ns 65 ns 30V 1kV 12A Tc 1000V 25A 1500 mJ 20V ±30V
VBO160-14NO7 VBO160-14NO7 IXYS 0.0000
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0.00000000 download Chassis Mount, Screw Bulk 2008 yes Active 1 (Unlimited) 4 94mm ROHS3 Compliant 4 PWS-E 30mm 54mm Chassis Mount -40°C~150°C TJ Standard UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED VBO160 4 Bridge Rectifier Diodes Not Qualified SILICON 1 Single Phase 1 2500A 1.43V ISOLATED 2.8kA 300μA 300μA @ 1400V 1.43V @ 300A 174A 3.3kA 1.4kV
IXTA152N085T IXTA152N085T IXYS 0.0000
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0.00000000 download Surface Mount Tube 2006 TrenchMV™ yes Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant Lead Free AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 DRAIN Single 360W 360W Tc 152A SWITCHING 0.007Ohm 50 ns SILICON N-Channel 7m Ω @ 25A, 10V 4V @ 250μA 5500pF @ 25V 114nC @ 10V 50ns 45 ns 85V 152A Tc 410A 750 mJ 10V ±20V
IXTP36N30T IXTP36N30T IXYS 0.0000
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0.00000000 Through Hole Tube PolarHT™ Active 1 (Unlimited) ROHS3 Compliant TO-220-3 Through Hole MOSFET (Metal Oxide) 300W 36A N-Channel 110m Ω @ 500mA, 10V 2250pF @ 25V 70nC @ 10V 36A Tc 300V
IXTA180N085T IXTA180N085T IXYS 0.0000
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0.00000000 download Surface Mount Tube 2006 TrenchMV™ yes Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant Lead Free AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 5.5MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 430W 430W Tc 180A SWITCHING 55 ns SILICON N-Channel 5.5m Ω @ 25A, 10V 4V @ 250μA 7500pF @ 25V 170nC @ 10V 70ns 65 ns 85V 180A Tc 480A 1000 mJ 10V ±20V
IXFH67N10 IXFH67N10 IXYS 82.5022
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0.00000000 download Through Hole Tube 2000 HiPerFET™ yes Obsolete Not Applicable 3 EAR99 Non-RoHS Compliant 67A TO-247-3 Through Hole -55°C~150°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 1 TO-247AD DRAIN Single 300W 300W Tc 67A SWITCHING 0.025Ohm 80 ns SILICON N-Channel 25m Ω @ 33.5A, 10V 4V @ 4mA 4500pF @ 25V 260nC @ 10V 60ns 60 ns 20V 100V 67A Tc 268A 10V ±20V
IXFR48N60Q3 IXFR48N60Q3 IXYS 0.0000
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0.00000000 download 30 Weeks Through Hole Tube 2011 HiPerFET™ Active 1 (Unlimited) 3 16.13mm ROHS3 Compliant Lead Free 247 AVALANCHE RATED, UL RECOGNIZED TO-247-3 unknown 21.34mm 5.21mm 154Ohm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 3 R-PSIP-T3 FET General Purpose Power 1 ISOLATED Single 500W 37 ns 500W Tc 32A SWITCHING 40 ns SILICON N-Channel 154m Ω @ 24A, 10V 6.5V @ 4mA 7020pF @ 25V 140nC @ 10V 300ns 30V 600V 32A Tc 120A 2000 mJ 10V ±30V
IXFP36N30P3 IXFP36N30P3 IXYS 0.0000
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0.00000000 download 26 Weeks Through Hole Tube 2014 HiPerFET™, Polar3™ Active 1 (Unlimited) ROHS3 Compliant TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 347W Tc 36A N-Channel 110m Ω @ 18A, 10V 4.5V @ 250μA 2040pF @ 25V 30nC @ 10V 36A Tc 300V 10V ±20V
IXFR24N100 IXFR24N100 IXYS 0.0000
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0.00000000 download Through Hole Tube 2008 HiPerFET™ yes Obsolete 3 RoHS Compliant Lead Free 22A No 3 AVALANCHE RATED ISOPLUS247™ Through Hole -55°C~150°C TJ 1kV MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) 3 FET General Purpose Power 1 ISOLATED Single 400W 416W Tc 22A SWITCHING 75 ns SILICON N-Channel 390m Ω @ 12A, 10V 5.5V @ 8mA 8700pF @ 25V 267nC @ 10V 35ns 21 ns 20V 1kV 22A Tc 1000V 96A 10V ±20V
DSP25-12AT-TRL DSP25-12AT-TRL IXYS 0.0000
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0.00000000 24 Weeks DSP25-12AT Active 2 LOW LEAKAGE CURRENT, PD-CASE TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Surface Mount SINGLE GULL WING YES R-PSSO-G2 150°C IEC-60747 SILICON 2 Standard 25A GENERAL PURPOSE 1 1200V 275A ANODE AND CATHODE Standard Recovery >500ns, > 200mA (Io) 40μA @ 1200V 1.23V @ 25A -40°C~175°C 1 Pair Series Connection 1200V 25A 40μA 160W
MDA600-16N1 MDA600-16N1 IXYS 0.0000
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0.00000000 download Chassis Mount Tray 2004 Obsolete 1 (Unlimited) RoHS Compliant 500 Module Chassis Mount MD*600 Standard Common Anode Module Standard Recovery >500ns, > 200mA (Io) 50mA @ 1600V 880mV @ 500A 1.6kV 883A 1 Pair Common Anode 1600V 883A 18 μs 1.6kV
IXTA34N65X2-TRL IXTA34N65X2-TRL IXYS 0.0000
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0.00000000 15 Weeks Active TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 540W Tc N-Channel 96m Ω @ 17A, 10V 5V @ 250μA 3000pF @ 25V 54nC @ 10V 34A Tc 650V 10V ±30V
IXFP34N65X2M IXFP34N65X2M IXYS 0.0000
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0.00000000 19 Weeks Tube HiPerFET™ Active 1 (Unlimited) TO-220-3 Full Pack, Isolated Tab compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 40W Tc N-Channel 100m Ω @ 17A, 10V 5V @ 1.5mA 3230pF @ 25V 56nC @ 10V 34A Tc 650V 10V ±30V
IXTQ200N075T IXTQ200N075T IXYS 0.0000
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0.00000000 download Through Hole Tube 2006 yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant 3 AVALANCHE RATED TO-3P-3, SC-65-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 DRAIN Single 430W 430W Tc 200A SWITCHING 0.005Ohm 54 ns SILICON N-Channel 5m Ω @ 25A, 10V 4V @ 250μA 6800pF @ 25V 160nC @ 10V 57ns 52 ns 75V 200A Tc 540A 750 mJ 10V ±20V
DSEP30-04A DSEP30-04A IXYS 0.0000
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0.00000000 download Through Hole Tube 2000 HiPerFRED™ yes Obsolete 1 (Unlimited) 2 EAR99 175°C -55°C RoHS Compliant Lead Free FREE WHEELING DIODE, SNUBBER DIODE TO-247-2 Through Hole AVALANCHE 8541.10.00.80 NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T2 Rectifier Diodes Not Qualified SILICON 1 Standard GENERAL PURPOSE 1 TO-247AD 1.46V CATHODE 280A Single Fast Recovery =< 500ns, > 200mA (Io) 250μA @ 400V 1.46V @ 30A -55°C~175°C 400V 30A 250μA 400V 30 ns 400V 30 ns
IXGA16N60C2D1 IXGA16N60C2D1 IXYS 0.0000
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0.00000000 download Surface Mount Tube 2010 HiPerFAST™ yes Obsolete 1 (Unlimited) 2 RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount 1.59999g -55°C~150°C TJ Standard Pure Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED IXG*16N60 4 R-PSSO-G2 Insulated Gate BIP Transistors Not Qualified 150W 150W 1 COLLECTOR N-CHANNEL Single 30ns 40A 600V 600V POWER CONTROL SILICON 3V 43 ns 3V @ 15V, 12A 190 ns PT 20V 5.5V 400V, 12A, 22 Ω, 15V 25nC 100A 16ns/75ns 160μJ (on), 90μJ (off)
IXFK66N50Q2 IXFK66N50Q2 IXYS 176.5348
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0.00000000 download Through Hole Tube 2004 HiPerFET™ Obsolete 1 (Unlimited) 3 19.96mm RoHS Compliant 3 AVALANCHE RATED TO-264-3, TO-264AA 26.16mm 5.13mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 DRAIN Single 735W 32 ns 735W Tc 66A SWITCHING 0.08Ohm 60 ns SILICON N-Channel 80m Ω @ 500mA, 10V 4.5V @ 8mA 8400pF @ 25V 200nC @ 10V 16ns 10 ns 30V 500V 66A Tc 264A 4000 mJ 10V ±30V
  • DNA30ER2200IY
    DNA30ER2200IY IXYS

    Standard Diode Rectifier Standard Recovery >500ns, > 200mA (Io) 1.26V @ 30A -55°C~175°C 40μA @ 2200V 2-Termination Tube TO-262-2, I2Pak Through Hole

    Price: 4.3632

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  • IXFB70N100X
    IXFB70N100X IXYS

    MOSFET (Metal Oxide) N-Channel 89m Ω @ 35A, 10V ±30V 9160pF @ 25V 350nC @ 10V 1000V TO-264-3, TO-264AA

    Price: 0.0000

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  • IXTA36N20T
    IXTA36N20T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 0.0000

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  • IXFA110N15T2-TRL
    IXFA110N15T2-TRL IXYS

    MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 13m Ω @ 500mA, 10V ±20V 8600pF @ 25V 150nC @ 10V 150V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 0.0000

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  • IXKP24N60C5M
    IXKP24N60C5M IXYS

    MOSFET (Metal Oxide) N-Channel Tube 165m Ω @ 10A, 10V ±20V 2000pF @ 100V 52nC @ 10V TO-220-3 Full Pack, Isolated Tab

    Price: 0.0000

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  • DSEP29-06AS-TUBE
    DSEP29-06AS-TUBE IXYS

    TO-263-3

    Price: 3.0225

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  • IXTH16P60P
    IXTH16P60P IXYS

    MOSFET (Metal Oxide) P-Channel Tube 720m Ω @ 500mA, 10V ±20V 5120pF @ 25V 92nC @ 10V 600V TO-247-3

    Price: 0.0000

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  • IXTK90P20P
    IXTK90P20P IXYS

    MOSFET (Metal Oxide) P-Channel Tube 44m Ω @ 500mA, 10V ±20V 12000pF @ 25V 205nC @ 10V 200V TO-264-3, TO-264AA

    Price: 0.0000

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  • IXFJ32N50
    IXFJ32N50 IXYS

    Price: 0.0000

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  • DPG10I400PA
    DPG10I400PA IXYS

    Standard Diode Rectifier Fast Recovery =< 500ns, > 200mA (Io) 1.32V @ 10A -55°C~175°C 1μA @ 400V 2-Termination Tube TO-220-2 Through Hole

    Price: 1.8262

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  • IXTP27N20T
    IXTP27N20T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 200V TO-220-3

    Price: 0.0000

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  • MMIX1F210N30P3
    MMIX1F210N30P3 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 16m Ω @ 105A, 10V 16200pF @ 25V 300V 24-PowerSMD, 21 Leads

    Price: 0.0000

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  • IXFX120N30P3
    IXFX120N30P3 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 27m Ω @ 60A, 10V ±20V 8630pF @ 25V 150nC @ 10V 300V TO-247-3

    Price: 0.0000

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  • IXTH12N100L
    IXTH12N100L IXYS

    MOSFET (Metal Oxide) N-Channel Tube 1.3 Ω @ 500mA, 20V ±30V 2500pF @ 25V 155nC @ 20V 1000V TO-247-3

    Price: 0.0000

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  • VBO160-14NO7
    VBO160-14NO7 IXYS

    Single Phase Bridge Rectifier Standard Chassis Mount -40°C~150°C TJ 300μA @ 1400V 1.43V @ 300A 4-Termination 1-Phase PWS-E Bulk

    Price: 0.0000

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  • IXTA152N085T
    IXTA152N085T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 7m Ω @ 25A, 10V ±20V 5500pF @ 25V 114nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 0.0000

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  • IXTP36N30T
    IXTP36N30T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 110m Ω @ 500mA, 10V 2250pF @ 25V 70nC @ 10V 300V TO-220-3

    Price: 0.0000

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  • IXTA180N085T
    IXTA180N085T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 5.5m Ω @ 25A, 10V ±20V 7500pF @ 25V 170nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 0.0000

    RFQ
  • IXFH67N10
    IXFH67N10 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 25m Ω @ 33.5A, 10V ±20V 4500pF @ 25V 260nC @ 10V TO-247-3

    Price: 82.5022

    RFQ
  • IXFR48N60Q3
    IXFR48N60Q3 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 154m Ω @ 24A, 10V ±30V 7020pF @ 25V 140nC @ 10V TO-247-3

    Price: 0.0000

    RFQ
  • IXFP36N30P3
    IXFP36N30P3 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 110m Ω @ 18A, 10V ±20V 2040pF @ 25V 30nC @ 10V 300V TO-220-3

    Price: 0.0000

    RFQ
  • IXFR24N100
    IXFR24N100 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 390m Ω @ 12A, 10V ±20V 8700pF @ 25V 267nC @ 10V 1000V ISOPLUS247™

    Price: 0.0000

    RFQ
  • DSP25-12AT-TRL
    DSP25-12AT-TRL IXYS

    Standard Rectifier Diode 1 Pair Series Connection Standard Recovery >500ns, > 200mA (Io) -40°C~175°C 2-Element TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Surface Mount

    Price: 0.0000

    RFQ
  • MDA600-16N1
    MDA600-16N1 IXYS

    Standard Rectifier Diode 1 Pair Common Anode Standard Recovery >500ns, > 200mA (Io) 883A 1.6kV-DC Module Chassis Mount

    Price: 0.0000

    RFQ
  • IXTA34N65X2-TRL
    IXTA34N65X2-TRL IXYS

    MOSFET (Metal Oxide) N-Channel 96m Ω @ 17A, 10V ±30V 3000pF @ 25V 54nC @ 10V 650V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 0.0000

    RFQ
  • IXFP34N65X2M
    IXFP34N65X2M IXYS

    MOSFET (Metal Oxide) N-Channel Tube 100m Ω @ 17A, 10V ±30V 3230pF @ 25V 56nC @ 10V 650V TO-220-3 Full Pack, Isolated Tab

    Price: 0.0000

    RFQ
  • IXTQ200N075T
    IXTQ200N075T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 5m Ω @ 25A, 10V ±20V 6800pF @ 25V 160nC @ 10V TO-3P-3, SC-65-3

    Price: 0.0000

    RFQ
  • DSEP30-04A
    DSEP30-04A IXYS

    Standard Diode Rectifier Fast Recovery =< 500ns, > 200mA (Io) 1.46V @ 30A -55°C~175°C 250μA @ 400V 2-Termination Tube TO-247-2 Through Hole

    Price: 0.0000

    RFQ
  • IXGA16N60C2D1
    IXGA16N60C2D1 IXYS

    IXGA16N60C2D1 datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available at Utmel

    Price: 0.0000

    RFQ
  • IXFK66N50Q2
    IXFK66N50Q2 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 80m Ω @ 500mA, 10V ±30V 8400pF @ 25V 200nC @ 10V TO-264-3, TO-264AA

    Price: 176.5348

    RFQ
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