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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Frequency Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count JESD-30 Code Subcategory Qualification Status Max Power Dissipation Number of Elements Configuration JEDEC-95 Code Polarity Case Connection Gain Bandwidth Product Polarity/Channel Type Leakage Current (Max) Critical Rate of Rise of Off-State Voltage-Min Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Breakdown Voltage Max Repetitive Reverse Voltage (Vrrm) Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Hold Current Collector Emitter Voltage (VCEO) RMS Current (Irms) Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Trigger Device Type Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Transistor Type Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Turn Off Time-Max (toff) Current - Collector Cutoff (Max) Collector Emitter Saturation Voltage VCEsat-Max Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) hFE Min Voltage - Off State Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) RMS On-state Current-Max Triac Type DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic
BD535 BD535 STMicroelectronics 0.0000
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0.00000000 download Through Hole Tube yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 8A No 3 TO-220-3 Through Hole 150°C TJ 60V e3 Matte Tin (Sn) BD535 3 Other Transistors 50W 1 12MHz NPN Single 50W 8A 60V 60V SWITCHING SILICON NPN 12MHz 100μA 800mV 0.8 V 60V 5V 20 25 @ 2A 2V 800mV @ 600mA, 6A
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0.00000000 download 17 Weeks Through Hole Tube MDmesh™ K5 Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED STP23N 190W Tc 16A N-Channel 280m Ω @ 8A, 10V 5V @ 100μA 1000pF @ 100V 33nC @ 10V 16A Tc 800V 10V ±30V
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0.00000000 download 12 Weeks ACTIVE (Last Updated: 7 months ago) Through Hole Tube MDmesh™ V Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant ISOWATT218FX Through Hole 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED STFW R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE ISOLATED 57W Tc 35A SWITCHING 0.078Ohm 650V SILICON N-Channel 78m Ω @ 17.5A, 10V 5V @ 250μA 3470pF @ 100V 82nC @ 10V 35A Tc 650V 140A 810 mJ 10V ±25V
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0.00000000 download Tube MDmesh™ K5 Obsolete Not Applicable ROHS3 Compliant TO-262-3 Full Pack, I2Pak Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) STFI5N 20W Tc N-Channel 1.75 Ω @ 2A, 10V 5V @ 100μA 177pF @ 100V 5.5nC @ 10V 4A Tc 800V 10V ±30V
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0.00000000 download 12 Weeks ACTIVE (Last Updated: 8 months ago) Through Hole Tube SuperMESH™ Active 1 (Unlimited) 3 EAR99 10.4mm ROHS3 Compliant Lead Free 4A No 3 TO-220-3 No SVHC 9.15mm 4.6mm 2Ohm Through Hole 150°C TJ 600V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) STP4N 3 FET General Purpose Power 1 TO-220AB Single 70W 12 ns 3.75V 70W Tc 4A SWITCHING 29 ns SILICON N-Channel 2 Ω @ 2A, 10V 4.5V @ 50μA 510pF @ 25V 26nC @ 10V 9.5ns 16.5 ns 30V 600V 600V 3.75 V 4A 4A Tc 10V ±30V
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0.00000000 download Surface Mount Tape & Reel (TR) Obsolete 3 (168 Hours) 3 EAR99 4.6mm ROHS3 Compliant Lead Free 4 TO-243AA not_compliant 1.6mm 2.6mm Surface Mount 150°C TJ e3 Matte Tin (Sn) FLAT 260 30 2STF22 3 R-PSSO-F3 Other Transistors Not Qualified 1.4W 1 COLLECTOR PNP Single 1.4W 20V 1.5A 20V 20V SWITCHING SILICON PNP 100nA ICBO 450mV 20V 5V 200 200 @ 100mA 2V 450mV @ 150mA, 1.5A
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STFU15NM65N STFU15NM65N STMicroelectronics 0.0000
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0.00000000 download 16 Weeks Through Hole Tube MDmesh™ II Active 1 (Unlimited) 3 EAR99 Non-RoHS Compliant TO-220-3 Full Pack not_compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED STFU1 R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 30W Tc 12A SWITCHING 0.38Ohm 650V SILICON N-Channel 380m Ω @ 6A, 10V 4V @ 250μA 983pF @ 50V 33.3nC @ 10V 12A Tc 650V 48A 187 mJ 10V ±25V
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0.00000000 download NRND (Last Updated: 7 months ago) Surface Mount Tape & Reel (TR) MDmesh™ II Active 3 (168 Hours) 5 EAR99 8mm ROHS3 Compliant Lead Free No 5 8-PowerVDFN No SVHC 950μm 8mm 310mOhm Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL STL18 5 1 DRAIN Single 110W 20 ns 3V 3W Ta 110W Tc 12A SWITCHING 50 ns SILICON N-Channel 310m Ω @ 6A, 10V 4V @ 250μA 1000pF @ 50V 35nC @ 10V 22ns 40 ns 25V 600V 2.1A 2.1A Ta 12A Tc 8.4A 10V ±30V
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BTA06-800TWRG BTA06-800TWRG STMicroelectronics 0.0000
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BD434 BD434 STMicroelectronics 0.0000
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0.00000000 download Through Hole Tube yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant Tin No 3 TO-225AA, TO-126-3 No SVHC 3MHz Through Hole 150°C TJ e3 BD434 3 Other Transistors 36W 1 ISOLATED 3MHz PNP Single 36W 4A 22V 22V SWITCHING SILICON PNP 3MHz 100μA 200mV 22V 5V 40 40 @ 10mA 5V 500mV @ 200mA, 2A
BCP52-16 BCP52-16 STMicroelectronics 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) Obsolete 1 (Unlimited) 4 EAR99 ROHS3 Compliant Lead Free -1A TO-261-4, TO-261AA 50MHz Surface Mount 150°C TJ -60V e3 Matte Tin (Sn) DUAL GULL WING 260 NOT SPECIFIED BCP52 4 R-PDSO-G4 Other Transistors Not Qualified 1.4W 1 COLLECTOR 50MHz PNP Single 1.4W 60V 1A 60V 60V SWITCHING SILICON PNP 50MHz 100nA ICBO 60V 5V 40 100 @ 150mA 2V 500mV @ 50mA, 500mA
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0.00000000 download ACTIVE (Last Updated: 8 months ago) Surface Mount Cut Tape (CT) DeepGATE™, STripFET™ VII Active 1 (Unlimited) EAR99 15.8mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.8mm 10.4mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) STH110 FET General Purpose Power 1 Single 150W 25 ns 150W Tc 110A 52 ns N-Channel 6.5m Ω @ 55A, 10V 4.5V @ 250μA 5117pF @ 50V 72nC @ 10V 20V 100V 110A Tc 10V ±20V
STP5N62K3 STP5N62K3 STMicroelectronics 0.0000
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0.00000000 download 12 Weeks ACTIVE (Last Updated: 8 months ago) Through Hole Tube SuperMESH3™ Active 1 (Unlimited) 3 EAR99 10.4mm ROHS3 Compliant Lead Free No 3 ULTRA LOW-ON RESISTANCE TO-220-3 No SVHC 15.75mm 4.6mm 1.6Ohm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE STP5N 3 FET General Purpose Power 1 TO-220AB Single 70W 12 ns 3.75V 70W Tc 4.2A SWITCHING 40 ns SILICON N-Channel 1.6 Ω @ 2.1A, 10V 4.5V @ 50μA 680pF @ 50V 26nC @ 10V 8ns 21 ns 30V 620V 4.2A Tc 10V ±30V
STD26NF10 STD26NF10 STMicroelectronics 0.0000
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0.00000000 download ACTIVE (Last Updated: 7 months ago) Surface Mount Tape & Reel (TR) STripFET™ II Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 38MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - annealed GULL WING 260 30 STD26N 3 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 100W 17 ns 100W Tc 25A SWITCHING 60 ns SILICON N-Channel 38m Ω @ 12.5A, 10V 4V @ 250μA 1550pF @ 25V 55nC @ 10V 60ns 15 ns 20V 100V 25A Tc 480 mJ 10V ±20V
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0.00000000 download Tube Obsolete Yes with exemptions 3
ACST1235-7G ACST1235-7G STMicroelectronics 0.0000
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0.00000000 download 17 Weeks ACTIVE (Last Updated: 8 months ago) Through Hole Tube MDmesh™ K5 Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED STW12N 250W Tc 7A N-Channel 1.9 Ω @ 3.5A, 10V 5V @ 100μA 1360pF @ 100V 47nC @ 10V 7A Tc 1500V 10V ±30V
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STD50NH02LT4 STD50NH02LT4 STMicroelectronics 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) STripFET™ III Obsolete 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free 50A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ 24V MOSFET (Metal Oxide) STD50N 3 Single 60W 10 ns 60W Tc 50A 27 ns N-Channel 10.5m Ω @ 25A, 10V 1.8V @ 250μA 1400pF @ 25V 24nC @ 10V 130ns 16 ns 20V 24V 50A Tc 5V 10V ±20V
TIP115 TIP115 STMicroelectronics 0.0000
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0.00000000 download 8 Weeks ACTIVE (Last Updated: 7 months ago) Through Hole Tube Active 1 (Unlimited) 3 EAR99 10.4mm ROHS3 Compliant Lead Free -2A No 3 TO-220-3 No SVHC 15.75mm 4.6mm Through Hole 4.535924g 150°C TJ -60V e3 Matte Tin (Sn) TIP115 3 Other Transistors 2W 1 TO-220AB PNP Single 2W 2A 60V 60V SWITCHING SILICON PNP - Darlington 2mA 2.5V 60V 5V 1000 1000 @ 1A 4V 2.5V @ 8mA, 2A
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0.00000000 download 12 Weeks ACTIVE (Last Updated: 8 months ago) Through Hole Tube STripFET™ II Active 1 (Unlimited) 3 EAR99 15.75mm ROHS3 Compliant Lead Free 120A No 3 AVALANCHE RATED TO-247-3 No SVHC 20.15mm 5.15mm 10.5mOhm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) STW120 3 FET General Purpose Power 1 DRAIN Single 312W 25 ns 4V 312W Tc 110A SWITCHING 132 ns SILICON N-Channel 10.5m Ω @ 60A, 10V 4V @ 250μA 5200pF @ 25V 233nC @ 10V 90ns 68 ns 20V 100V 110A Tc 440A 550 mJ 10V ±20V
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