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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Operating Supply Voltage Diameter RoHS Status Lead Free Contact Plating Voltage - Rated Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Frequency Operating Mode HTS Code Type Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Operating Temperature (Min) Subcategory Qualification Status Gain Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Application Number of Phases Rep Pk Reverse Voltage-Max JEDEC-95 Code Non-rep Pk Forward Current-Max Polarity Case Connection Halogen Free Polarity/Channel Type Power Dissipation-Max (Abs) Collector Current-Max (IC) On-State Current-Max Repetitive Peak Off-state Voltage Leakage Current (Max) Non-Repetitive Pk On-state Cur Holding Current-Max DC Gate Trigger Current-Max DC Gate Trigger Voltage-Max Max Surge Current Element Configuration Current - Output Power Dissipation Turn On Delay Time Drain to Source Resistance Max Breakdown Voltage Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Max Forward Surge Current (Ifsm) Reverse Current-Max Power Dissipation-Max Reverse Voltage Reverse Test Voltage Forward Voltage-Max Max Collector Current Reverse Recovery Time-Max Collector Emitter Breakdown Voltage Hold Current Collector Emitter Voltage (VCEO) RMS Current (Irms) Continuous Drain Current (ID) Transistor Application DS Breakdown Voltage-Min FET Technology Trigger Device Type Turn-Off Delay Time Transistor Element Material Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Current - Test Voltage - Test Highest Frequency Band Power Gain-Min (Gp) Power - Output Rds On Max Capacitance - Input Collector Emitter Saturation Voltage Turn On Time Turn Off Time-Nom (toff) Gate-Emitter Voltage-Max VCEsat-Max Channel Type Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) Desc. of Quick-Connects Desc. of Screw Terminals Frequency - Transition Automotive EU RoHS HTS Lead Shape Maximum Operating Temperature (°C) Minimum Operating Temperature (°C) Mounting Package Height PCB changed PPAP Standard Package Name Supplier Package ECCN (US) Category Maximum Power Dissipation (mW) Channel Mode Number of Elements per Chip Maximum Drain Source Voltage (V) Maximum Gate Source Voltage (V) Maximum Continuous Drain Current (A) Maximum Drain Source Resistance (mOhm) Typical Gate Charge @ Vgs (nC) Typical Input Capacitance @ Vds (pF) Typical Turn-Off Delay Time (ns) Typical Turn-On Delay Time (ns) Process Technology Typical Gate Charge @ 10V (nC) Typical Fall Time (ns) Typical Rise Time (ns)
D690S20T D690S20T Infineon 0.0000
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