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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Row Spacing Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
IRF9Z24NPBF IRF9Z24NPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 1997 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.5156mm ROHS3 Compliant Lead Free Tin -12A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 No SVHC 2.54mm 15.24mm 4.69mm 175mOhm Through Hole -55°C~175°C TJ -55V MOSFET (Metal Oxide) ENHANCEMENT MODE Other Transistors 1 TO-220AB DRAIN Single 45W 13 ns -4V 45W Tc 71 ns -12A SWITCHING 23 ns SILICON P-Channel 175m Ω @ 7.2A, 10V 4V @ 250μA 350pF @ 25V 19nC @ 10V 55ns 37 ns 20V -55V -55V -4 V 12A Tc 55V 48A 96 mJ 10V ±20V
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0.00000000 Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) D-Pak 62W Tc N-Channel 16mOhm @ 15A, 10V 3V @ 250μA 1650pF @ 25V 20nC @ 5V 44A Tc 30V 4.5V 10V ±20V
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0.00000000 download Surface Mount Tube 2005 FETKY™ Obsolete 1 (Unlimited) RoHS Compliant 8 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 1 1.25W 1.25W Ta -1.7A 38 ns P-Channel 270m Ω @ 1.2A, 4.5V 700mV @ 250μA 240pF @ 15V 8.2nC @ 4.5V 35ns 43 ns 12V -20V Schottky Diode (Isolated) 1.7A Ta 20V 2.7V 4.5V ±12V
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2006 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free 180A No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 4.5MOhm Surface Mount -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 300W 29 ns 4V 300W Tc 180A SWITCHING 68 ns SILICON N-Channel 4.5m Ω @ 75A, 10V 4V @ 250μA 7600pF @ 50V 260nC @ 10V 120ns 74 ns 20V 75V 4 V 75A 170A Tc 720A 10V ±20V
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0.00000000 download Tape & Reel (TR) 2003 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 68W Tc SWITCHING 0.051Ohm 55V SILICON N-Channel 40m Ω @ 17A, 10V 2V @ 250μA 880pF @ 25V 25nC @ 5V 28A 28A Tc 55V 110A 110 mJ 4V 10V ±16V
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0.00000000 download Tube 2008 CoolMOS™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant TO-220-3 compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 156W Tc SWITCHING 0.33Ohm 600V SILICON N-Channel 330m Ω @ 9.4A, 10V 5V @ 750μA 1820pF @ 25V 84nC @ 10V 13.4A 13.4A Tc 650V 33A 460 mJ 10V ±20V
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0.00000000 Tube 2004 HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 3.1W Ta 120W Tc N-Channel 6m Ω @ 15A, 10V 3V @ 250μA 2980pF @ 10V 44nC @ 4.5V 110A Tc 20V 4.5V 10V ±20V
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0.00000000 download 12 Weeks Through Hole Tube 2010 HEXFET® Active 1 (Unlimited) 3 EAR99 16.129mm ROHS3 Compliant Lead Free 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-247-3 No SVHC 21.1mm 5.2mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN OVER NICKEL 250 30 FET General Purpose Power Not Qualified 1 TO-247AC Single 300W 17 ns 4V 300W Tc 50A SWITCHING 0.04Ohm 55 ns SILICON N-Channel 40m Ω @ 28A, 10V 4V @ 250μA 4057pF @ 25V 234nC @ 10V 60ns 48 ns 20V 200V 50A Tc 200A 560 mJ 10V ±20V
IPB80P03P4L07ATMA1 IPB80P03P4L07ATMA1 Infineon Technologies 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 8 ns -30V 88W Tc 80A SWITCHING 0.0069Ohm 15 ns SILICON P-Channel 6.9m Ω @ 80A, 10V 2V @ 130μA 5700pF @ 25V 80nC @ 10V 4ns 60 ns 5V 80A Tc 30V 4.5V 10V +5V, -16V
IRFB4233PBF IRFB4233PBF Infineon Technologies 0.0000
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0.00000000 download Through Hole Tube 2007 HEXFET® Obsolete 1 (Unlimited) Through Hole 175°C -40°C 10.6426mm RoHS Compliant No 3 TO-220-3 No SVHC 16.51mm 4.82mm Through Hole -40°C~175°C TJ MOSFET (Metal Oxide) 1 Single 370W 31 ns 5V 37mOhm TO-220AB 370W Tc 56A 51 ns N-Channel 37mOhm @ 28A, 10V 5V @ 250μA 5510pF @ 25V 170nC @ 10V 30V 230V 276V 5 V 56A Tc 230V 5.51nF 10V ±30V 37 mΩ
IPD90P03P4L04ATMA1 IPD90P03P4L04ATMA1 Infineon Technologies 0.0000
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0.00000000 download 26 Weeks Tape & Reel (TR) 2008 Automotive, AEC-Q101, OptiMOS™ Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 137W Tc SWITCHING 0.0068Ohm 30V SILICON P-Channel 4.1m Ω @ 90A, 10V 2V @ 253μA 11300pF @ 25V 160nC @ 10V 90A 90A Tc 30V 360A 370 mJ 4.5V 10V +5V, -16V
IPP020N08N5AKSA1 IPP020N08N5AKSA1 Infineon Technologies 0.0000
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0.00000000 download 13 Weeks Through Hole Tube 2013 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 TO-220-3 not_compliant Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 1 1 TO-220AB DRAIN Halogen Free Single 40 ns 80V 375W Tc 120A SWITCHING 0.002Ohm 102 ns SILICON N-Channel 2m Ω @ 100A, 10V 3.8V @ 280μA 16900pF @ 40V 223nC @ 10V 36ns 37 ns 20V 80V 120A Tc 480A 6V 10V ±20V
IPA029N06NM5SXKSA1 IPA029N06NM5SXKSA1 Infineon Technologies 0.0000
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0.00000000 download 13 Weeks OptiMOS™5 Active TO-220-3 Full Pack Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 38W Tc N-Channel 2.9m Ω @ 87A, 10V 3.3V @ 36μA 5300pF @ 30V 74nC @ 10V 87A Tc 60V 6V 10V ±20V
IPB60R090CFD7ATMA1 IPB60R090CFD7ATMA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks CoolMOS™ CFD7 Active TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 124W Tc N-Channel 90m Ω @ 11.4A, 10V 4.5V @ 570μA 2103pF @ 400V 51nC @ 10V 25A Tc 650V 10V ±20V
IRFR4104TRR IRFR4104TRR Infineon Technologies 0.0000
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0.00000000 Tape & Reel (TR) 2003 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 140W Tc SWITCHING 0.0055Ohm 40V SILICON N-Channel 5.5m Ω @ 42A, 10V 4V @ 250μA 2950pF @ 25V 89nC @ 10V 42A 42A Tc 40V 480A 145 mJ 10V ±20V
IPD60R600P6 IPD60R600P6 Infineon Technologies 0.0000
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0.00000000 download 20 Weeks Tape & Reel (TR) 2011 CoolMOS™ P6 no Discontinued 1 (Unlimited) 2 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 63W Tc SWITCHING 0.6Ohm 600V SILICON N-Channel 600m Ω @ 2.4A, 10V 557pF @ 100V 12nC @ 10V 7.3A 7.3A Tc 600V 18A 133 mJ 10V ±20V
SPW12N50C3FKSA1 SPW12N50C3FKSA1 Infineon Technologies 0.0000
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0.00000000 download Through Hole Tube 2005 CoolMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free No AVALANCHE RATED, HIGH VOLTAGE TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-247AD 125W 10 ns 500V 125W Tc 11.6A 0.38Ohm 45 ns SILICON N-Channel 380m Ω @ 7A, 10V 3.9V @ 500μA 1200pF @ 25V 49nC @ 10V 8ns 8 ns 20V 11.6A Tc 560V 34.8A 340 mJ 10V ±20V
IRFP150NPBF IRFP150NPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 1998 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 15.875mm ROHS3 Compliant Contains Lead, Lead Free 42A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-247-3 No SVHC 5.45mm 24.99mm 5.3mm 36mOhm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE 1 FET General Purpose Power 1 TO-247AC DRAIN Single 140W 11 ns 4V 160W Tc 270 ns 42A 175°C SWITCHING 45 ns SILICON N-Channel 36m Ω @ 23A, 10V 4V @ 250μA 1900pF @ 25V 110nC @ 10V 56ns 40 ns 20V 100V 100V 4 V 42A Tc 420 mJ 10V ±20V
IPLU300N04S41R1XTMA1 IPLU300N04S41R1XTMA1 Infineon Technologies 0.0000
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0.00000000 download 20 Weeks Surface Mount Tape & Reel (TR) 2013 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free 8 ULTRA LOW RESISTANCE 8-PowerSFN Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE FLAT NOT SPECIFIED NOT SPECIFIED R-PSSO-F2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 40V 300W Tc 300A 0.00115Ohm SILICON N-Channel 1.15m Ω @ 100A, 10V 4V @ 125μA 12090pF @ 25V 151nC @ 10V 300A Tc 1200A 300 mJ 10V ±20V
IRLR3410TRPBF IRLR3410TRPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2003 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free Tin 17A No 3 AVALANCHE RATED, ULTRA LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.52mm 6.22mm 105mOhm Surface Mount -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 1 FET General Purpose Power 1 TO-252AA DRAIN Single 79W 7.2 ns 2V 79W Tc 210 ns 17A 175°C SWITCHING 30 ns SILICON N-Channel 105m Ω @ 10A, 10V 2V @ 250μA 800pF @ 25V 34nC @ 5V 53ns 26 ns 16V 100V 100V 2 V 17A Tc 60A 4V 10V ±16V
IRFP4232PBF IRFP4232PBF Infineon Technologies 0.0000
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0.00000000 download Through Hole Bulk 2007 HEXFET® Obsolete 1 (Unlimited) Through Hole 175°C -40°C 15.87mm RoHS Compliant Lead Free 60A No 3 TO-247-3 No SVHC 20.7mm 5.3086mm 35.7MOhm Through Hole -40°C~175°C TJ 250V MOSFET (Metal Oxide) 1 Single 430W 37 ns 5V 35.7mOhm TO-247AC 430W Tc 60A 64 ns N-Channel 35.7mOhm @ 42A, 10V 5V @ 250μA 7290pF @ 25V 240nC @ 10V 30V 250V 250V 5 V 60A Tc 250V 7.29nF 10V ±20V 35.7 mΩ
IRF7822PBF IRF7822PBF Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tube 2001 HEXFET® Obsolete 1 (Unlimited) 150°C -55°C 4.9784mm RoHS Compliant Lead Free 18A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) 1 6.3 mm 3.1W 15 ns 1V 6.5mOhm 8-SO 3.1W Ta 18A 22 ns N-Channel 6.5mOhm @ 15A, 4.5V 1V @ 250μA 5500pF @ 16V 60nC @ 5V 5.5ns 12 ns 12V 30V 30V 1 V 18A Ta 30V 5.5nF 4.5V ±12V 6.5 mΩ
IPC302N08N3X2SA1 IPC302N08N3X2SA1 Infineon Technologies 0.0000
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0.00000000 Tape & Reel (TR) Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant ENHANCEMENT MODE UNSPECIFIED NO LEAD YES R-XXUC-N 1 SINGLE WITH BUILT-IN DIODE N-CHANNEL 0.1Ohm 80V METAL-OXIDE SEMICONDUCTOR SILICON
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 CoolMOS™ P6 yes Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 600V 176W Tc 23.8A SWITCHING 0.16Ohm SILICON N-Channel 160m Ω @ 9A, 10V 4.5V @ 750μA 2080pF @ 100V 44nC @ 10V 23.8A Tc 68A 497 mJ 10V ±20V
AUIRFN8403TR AUIRFN8403TR Infineon Technologies 0.0000
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0.00000000 11 Weeks Surface Mount Tape & Reel (TR) 2013 HEXFET® Not For New Designs 1 (Unlimited) 5 EAR99 5.85mm ROHS3 Compliant 8 ULTRA LOW RESISTANCE 8-PowerTDFN 1.17mm 5mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED IRFN8403 R-PDSO-F5 1 FET General Purpose Power 1 DRAIN Single 11 ns 4.3W Ta 94W Tc 95A SWITCHING 0.0033Ohm 40V 33 ns SILICON N-Channel 3.3m Ω @ 50A, 10V 3.9V @ 100μA 3174pF @ 25V 98nC @ 10V 37ns 26 ns 20V 95A Tc 40V 492A 10V ±20V
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0.00000000 download Tape & Reel (TR) 2010 HEXFET® Obsolete 1 (Unlimited) TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) D2PAK 92W Tc N-Channel 12mOhm @ 34A, 10V 4V @ 250μA 1690pF @ 25V 65nC @ 10V 57A Tc 60V 10V ±20V
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0.00000000 download 12 Weeks Through Hole Tube 2002 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free Tin 210A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 16.51mm 4.826mm 3.6Ohm Through Hole -55°C~175°C TJ 40V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 FET General Purpose Power 1 TO-220AB DRAIN Single 330W 15 ns 4V 330W Tc 210A SWITCHING 62 ns SILICON N-Channel 3.6m Ω @ 130A, 10V 4V @ 250μA 5890pF @ 25V 200nC @ 10V 140ns 110 ns 20V 40V 40V 4 V 75A 210A Tc 850A 460 mJ 10V ±20V
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0.00000000 download 18 Weeks Tube 2008 CoolMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED, HIGH VOLTAGE TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 63W Tc SWITCHING 800V SILICON N-Channel 1.3 Ω @ 2.5A, 10V 3.9V @ 240μA 570pF @ 100V 31nC @ 10V 4A 4A Tc 800V 12A 170 mJ 10V ±20V
IPB023N06N3GATMA1 IPB023N06N3GATMA1 Infineon Technologies 0.0000
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0.00000000 download Tape & Reel (TR) 2011 OptiMOS™ yes Obsolete 1 (Unlimited) 6 EAR99 TO-263-7, D2Pak (6 Leads + Tab) Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE GULL WING 260 40 7 YES R-PSSO-G6 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 214W Tc SWITCHING 0.0023Ohm 60V SILICON N-Channel 2.3m Ω @ 100A, 10V 4V @ 141μA 16000pF @ 30V 198nC @ 10V 140A 140A Tc 60V 560A 330 mJ 10V ±20V
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