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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Subcategory Qualification Status Max Power Dissipation Power - Max Number of Elements Configuration JEDEC-95 Code Polarity Forward Voltage Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Max Breakdown Voltage Supplier Device Package Reverse Recovery Time Power Dissipation-Max Recovery Time Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Transistor Type Input Capacitance Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Collector Cutoff (Max) Collector Emitter Saturation Voltage Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) hFE Min DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition
IRF7467 IRF7467 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Tape & Reel (TR) 2011 OptiMOS™ no Active 1 (Unlimited) 8 EAR99 ROHS3 Compliant 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Tin (Sn) DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED 8 YES R-PDSO-N8 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.1W Ta 69W Tc SWITCHING 0.0057Ohm 30V SILICON N-Channel 3.5m Ω @ 20A, 10V 2.2V @ 250μA 4400pF @ 15V 56nC @ 10V 40A 20A Ta 40A Tc 30V 160A 150 mJ 4.5V 10V ±20V
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2005 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm 15.8MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA Single 71W 6.3 ns 71W Tc 43mA SWITCHING 49 ns SILICON N-Channel 15.8m Ω @ 25A, 10V 4V @ 50μA 1150pF @ 50V 30nC @ 10V 40ns 47 ns 20V 60V 2 V 43A Tc 10V ±20V
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0.00000000 download Tape & Reel (TR) 2004 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W Tc SWITCHING 0.295Ohm 150V SILICON P-Channel 295m Ω @ 6.6A, 10V 4V @ 250μA 860pF @ 25V 66nC @ 10V 13A 13A Tc 150V 44A 310 mJ 10V ±20V
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0.00000000 download Tape & Reel (TR) 1998 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant AVALANCHE RATED, ULTRA LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 45W Tc SWITCHING 0.075Ohm 55V SILICON N-Channel 75m Ω @ 10A, 10V 4V @ 250μA 370pF @ 25V 20nC @ 10V 17A 17A Tc 55V 68A 71 mJ 10V ±20V
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