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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode Capacitance HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Power - Max Diode Element Material Number of Elements Configuration Diode Type Application Number of Phases Rep Pk Reverse Voltage-Max JEDEC-95 Code Output Current Polarity Forward Current Forward Voltage Case Connection Breakdown Voltage-Min Halogen Free Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Current-Max Reverse Recovery Time Power Dissipation-Max Recovery Time Frequency Band Diode Capacitance-Max Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Transistor Type Input Capacitance Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Collector Cutoff (Max) Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Current - Max Voltage - Peak Reverse (Max) Resistance @ If, F Minority Carrier Lifetime-Nom Diode Forward Resistance-Max DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition Resistor - Base (R1)
IRL530NSTRLPBF IRL530NSTRLPBF Infineon Technologies 0.0000
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0.00000000 download Tape & Reel (TR) 2011 Obsolete 1 (Unlimited) 3 EAR99 SC-70, SOT-323 Surface Mount 150°C TJ e3 MATTE TIN DUAL GULL WING BC847 YES R-PDSO-G3 Not Qualified 250mW 1 SINGLE NPN SWITCHING SILICON NPN 250MHz 15nA ICBO 45V 100mA 200 @ 2mA 5V 600mV @ 5mA, 100mA 250MHz
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0.00000000 download 16 Weeks Surface Mount Tube 2010 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Tin No 3 ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING 260 30 R-PDSO-G2 FET General Purpose Power 1 DRAIN Single 140W 19 ns 2V 140W Tc 75A SWITCHING 0.0085Ohm 38 ns SILICON N-Channel 8.5m Ω @ 51A, 10V 4V @ 250μA 2810pF @ 25V 86nC @ 10V 90ns 54 ns 20V 60V 75A Tc 10V ±20V
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0.00000000 download Surface Mount Tube 2005 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Lead Free No 8 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING Other Transistors 1 SINGLE WITH BUILT-IN DIODE 2.5W 19 ns 2.5W Ta 12A SWITCHING 80 ns SILICON P-Channel 8.5m Ω @ 12A, 20V 2.4V @ 25μA 1680pF @ 25V 52nC @ 10V 57ns 66 ns 25V -30V 12A Ta 30V 96A 10V 20V ±25V
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