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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode Manufacturer Package Identifier HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Isolation Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
IRF3709ZSTRLPBF IRF3709ZSTRLPBF Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) 175°C -55°C RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) D2PAK 79W Tc 87A N-Channel 6.3mOhm @ 21A, 10V 2.25V @ 250μA 2130pF @ 15V 26nC @ 4.5V 87A Tc 30V 2.13nF 4.5V 10V ±20V 6.3 mΩ
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0.00000000 download Through Hole Tube 2009 Obsolete 1 (Unlimited) 3 EAR99 10.67mm RoHS Compliant No 3 TO-262-3 Long Leads, I2Pak, TO-262AA 4.83mm 15.01mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 40 FET General Purpose Power 1 DRAIN Single 100W 7.8 ns 100W Tc 18A SWITCHING 0.105Ohm 16 ns SILICON N-Channel 105m Ω @ 11A, 10V 4.9V @ 100μA 1200pF @ 50V 29nC @ 10V 12ns 6.3 ns 20V 200V 18A Tc 52A 94 mJ 10V ±20V
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0.00000000 download 16 Weeks Tube 2007 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 83W Tc SWITCHING 0.385Ohm 600V SILICON N-Channel 385m Ω @ 5.2A, 10V 3.5V @ 340μA 790pF @ 100V 22nC @ 10V 9A 9A Tc 650V 27A 227 mJ 10V ±20V
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0.00000000 download 12 Weeks Through Hole Tube 1998 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.5156mm ROHS3 Compliant Lead Free Tin -14A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 No SVHC 2.54mm 15.24mm 4.69mm 200mOhm Through Hole -55°C~175°C TJ -100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 250 30 Other Transistors 1 TO-220AB DRAIN Single 79W 15 ns -4V 79W Tc 190 ns -14A SWITCHING 45 ns SILICON P-Channel 200m Ω @ 8.4A, 10V 4V @ 250μA 760pF @ 25V 58nC @ 10V 58ns 46 ns 20V -100V -100V -4 V 14A Tc 100V 56A 250 mJ 10V ±20V
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0.00000000 download Surface Mount Tape & Reel (TR) 2007 HEXFET® Obsolete 1 (Unlimited) 150°C -55°C 4.9784mm RoHS Compliant Lead Free No 8 8-SOIC (0.154, 3.90mm Width) 1.4986mm 3.9878mm 79MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 1 Single 2.5W 15 ns 79mOhm 8-SO 2.5W Ta 3.7A 27 ns N-Channel 79mOhm @ 2.2A, 10V 2.5V @ 250μA 1820pF @ 25V 59nC @ 10V 13ns 14 ns 20V 200V 3.7A Ta 200V 1.82nF 10V ±20V 79 mΩ
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0.00000000 download 12 Weeks Through Hole Tube 1997 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.7442mm ROHS3 Compliant Lead Free 64A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-220-3 Full Pack No SVHC 9.8mm 4.826mm 8mOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB ISOLATED Single 63W 14 ns 4V 63W Tc 170 ns 64A SWITCHING 2kV 43 ns SILICON N-Channel 8m Ω @ 34A, 10V 4V @ 250μA 4000pF @ 25V 170nC @ 10V 100ns 70 ns 20V 55V 55V 4 V 56A 64A Tc 480 mJ 10V ±20V
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0.00000000 download 26 Weeks Surface Mount, Through Hole Tube 2013 HEXFET® Active 1 (Unlimited) EAR99 6.73mm ROHS3 Compliant Lead Free No 3 TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.39mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 1 FET General Purpose Power Single 163W 12 ns 3V 163W Tc 100A 51 ns N-Channel 1.98m Ω @ 90A, 10V 3.9V @ 100μA 5171pF @ 25V 155nC @ 10V 80ns 51 ns 20V 40V 3 V 100A Tc 10V ±20V
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0.00000000 download 10 Weeks Surface Mount Tape & Reel (TR) 2009 SIPMOS™ Active 1 (Unlimited) 3 EAR99 2.9mm ROHS3 Compliant Lead Free Tin 3 LOGIC LEVEL COMPATIBLE TO-236-3, SC-59, SOT-23-3 1mm 1.3mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.21.00.95 DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 1 Single 2.3 ns 360mW Ta 230mA 60V 6.7 ns SILICON N-Channel 3.5 Ω @ 230mA, 10V 1.4V @ 26μA 41pF @ 25V 1.4nC @ 10V 3ns 20V 230mA Ta 60V 4.5V 10V ±20V
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0.00000000 download Tube 2008 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant LOGIC LEVEL COMPATIBLE TO-220-3 compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 150W Tc SWITCHING 0.0042Ohm 30V SILICON N-Channel 3.1m Ω @ 55A, 10V 2V @ 100μA 7624pF @ 15V 59nC @ 5V 80A 80A Tc 30V 320A 580 mJ 4.5V 10V ±20V
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2012 HEXFET® Active 1 (Unlimited) 3 EAR99 3.04mm ROHS3 Compliant Lead Free 3 TO-236-3, SC-59, SOT-23-3 No SVHC 1.12mm 1.4mm 80MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE Micro3 e3 Matte Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 1 FET General Purpose Power Not Qualified 1 Single 1.3W 3.3 ns 800mV 1.3W Ta 13 ns 3.4A 150°C SWITCHING 12 ns SILICON N-Channel 63m Ω @ 3.4A, 4.5V 1.1V @ 10μA 270pF @ 24V 2.9nC @ 4.5V 4ns 4.9 ns 12V 30V 800 mV 3.4A Ta 2.5V 4.5V ±12V
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0.00000000 download Tape & Reel (TR) 2011 OptiMOS™ no Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant LOGIC LEVEL COMPATIBLE TO-252-3, DPak (2 Leads + Tab), SC-63 unknown Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 31W Tc SWITCHING 0.016Ohm 40V SILICON N-Channel 16m Ω @ 30A, 10V 2V @ 10μA 1200pF @ 20V 15nC @ 10V 30A 30A Tc 40V 210A 5 mJ 4.5V 10V ±20V
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0.00000000 download Surface Mount Tube 2005 HEXFET® Discontinued 1 (Unlimited) 8 SMD/SMT EAR99 5mm ROHS3 Compliant Lead Free Tin No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.5mm 4mm 2.8MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING FET General Purpose Power 1 Single 2.5W 23 ns 1.8V 2.5W Ta 36 ns 24A SWITCHING 23 ns SILICON N-Channel 2.8m Ω @ 24A, 10V 2.35V @ 100μA 5720pF @ 15V 66nC @ 4.5V 24ns 11 ns 20V 30V 30V 1.8 V 24A Ta 230 mJ 4.5V 10V ±20V
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 HEXFET® Active 1 (Unlimited) 2 EAR99 4.826mm ROHS3 Compliant Lead Free No 6 DirectFET™ Isometric SQ 506μm 3.95mm 4.9MOhm Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) BOTTOM R-XBCC-N2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 36W 11 ns 2.2W Ta 36W Tc 17A SWITCHING 14 ns SILICON N-Channel 4.9m Ω @ 17A, 10V 2.4V @ 50μA 1570pF @ 13V 18nC @ 4.5V 40ns 12 ns 20V 25V 17A Ta 68A Tc 4.5V 10V ±20V
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0.00000000 download 12 Weeks Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 TO-220-3 No SVHC Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 NO Not Qualified 1 TO-220AB ISOLATED Halogen Free Single 139W 35 ns 3V 139W Tc 17A SWITCHING 0.199Ohm 80 ns SILICON N-Channel 199m Ω @ 9.9A, 10V 3.5V @ 660μA 1800pF @ 100V 45nC @ 10V 14ns 10 ns 20V 500V 17A Tc 550V 40A 10V ±20V
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0.00000000 download Tube 2001 HEXFET® Obsolete 1 (Unlimited) 3 Non-RoHS Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 170W Tc SWITCHING 0.0065Ohm 55V SILICON N-Channel 6.5m Ω @ 66A, 10V 4V @ 250μA 3450pF @ 25V 110nC @ 10V 75A 75A Tc 55V 440A 250 mJ 10V ±20V
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0.00000000 download Surface Mount Tube 2008 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 6.73mm ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm 8.9MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 55W 10 ns 55W Tc 24 ns 58A SWITCHING 11 ns SILICON N-Channel 8.9m Ω @ 25A, 10V 2.35V @ 25μA 1350pF @ 15V 16nC @ 4.5V 47ns 10 ns 20V 30V 1.8 V 50A 58A Tc 260A 74 mJ 4.5V 10V ±20V
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