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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Isolation Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
IRFU7746PBF IRFU7746PBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 2014 HEXFET®, StrongIRFET™ Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-251-3 Short Leads, IPak, TO-251AA 11.2Ohm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 99W Tc 56A N-Channel 11.2m Ω @ 35A, 10V 3.7V @ 100μA 3107pF @ 25V 89nC @ 10V 56A Tc 75V 6V 10V ±20V
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0.00000000 download Tape & Reel (TR) 2011 OptiMOS™ yes Obsolete 1 (Unlimited) 2 EAR99 AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 unknown Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE GULL WING 260 40 4 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA 100W Tc SWITCHING 0.023Ohm 60V SILICON N-Channel 23m Ω @ 30A, 10V 4V @ 50μA 1100pF @ 30V 31nC @ 10V 30A 30A Tc 60V 120A 150 mJ 10V ±20V
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0.00000000 download Surface Mount Tape & Reel (TR) 2006 OptiMOS™ Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant Contains Lead 80A LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING 260 NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 107W Tc 80A SWITCHING 0.0051Ohm SILICON N-Channel 3.5m Ω @ 55A, 10V 2V @ 70μA 5203pF @ 15V 40nC @ 5V 80A Tc 320A 270 mJ 4.5V 10V ±20V
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0.00000000 Tube 2001 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 3W Ta 140W Tc SWITCHING 0.165Ohm 200V SILICON N-Channel 165m Ω @ 10A, 10V 5.5V @ 250μA 910pF @ 25V 41nC @ 10V 17A 17A Tc 200V 68A 260 mJ 10V ±30V
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0.00000000 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free No 4 TO-220-3 No SVHC 9.02mm 4.826mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE R-PSFM-T3 FET General Purpose Power 1 TO-220AB DRAIN Single 375W 16 ns 3V 375W Tc 270A SWITCHING 0.0025Ohm 118 ns SILICON N-Channel 2.5m Ω @ 170A, 10V 4V @ 250μA 8970pF @ 50V 300nC @ 10V 182ns 189 ns 20V 60V 195A Tc 320 mJ 10V ±20V
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2001 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free 110A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 5.084mm 10.54mm 8MOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 FET General Purpose Power 1 TO-252 DRAIN Single 200W 14 ns 4V 200W Tc 104 ns 110A 175°C SWITCHING 50 ns SILICON N-Channel 8m Ω @ 62A, 10V 4V @ 250μA 3247pF @ 25V 146nC @ 10V 101ns 65 ns 20V 55V 55V 4 V 75A 110A Tc 264 mJ 10V ±20V
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0.00000000 download 14 Weeks Through Hole Tube 2011 Automotive, AEC-Q101, OptiMOS™ Obsolete 1 (Unlimited) EAR99 10mm RoHS Compliant Contains Lead 3 TO-220-3 15.65mm 4.4mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED Halogen Free Single 12 ns -40V 75W Tc 80A 42 ns P-Channel 8.2m Ω @ 80A, 10V 2.2V @ 120μA 5430pF @ 25V 92nC @ 10V 11ns 35 ns 16V 80A Tc 40V 4.5V 10V +5V, -16V
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0.00000000 download Tube 2001 SIPMOS® Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-220-3 compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB 175W Tc 0.04Ohm 100V SILICON N-Channel 26m Ω @ 33A, 10V 2V @ 2mA 2500pF @ 25V 135nC @ 10V 47A 47A Tc 100V 188A 400 mJ 4.5V 10V ±20V
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2013 CoolMOS™ Obsolete 1 (Unlimited) EAR99 RoHS Compliant Contains Lead 4 4-PowerTSFN Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 2 Halogen Free 9 ns 650V 62.5W Tc 5.8A 40 ns N-Channel 725m Ω @ 2.1A, 10V 4.5V @ 200μA 615pF @ 100V 20nC @ 10V 8ns 10 ns 30V 650V 5.8A Tc 10V ±20V
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0.00000000 Tube 2004 HEXFET® Obsolete 1 (Unlimited) TO-251-3 Short Leads, IPak, TO-251AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 3.8W Ta 140W Tc N-Channel 14m Ω @ 18A, 10V 5.5V @ 250μA 3510pF @ 25V 94nC @ 10V 70A Tc 80V 10V ±20V
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 2 6.73mm ROHS3 Compliant 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant 2.41mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 DRAIN Halogen Free Single 4 ns 60V 36W Tc 30A SWITCHING 15 ns SILICON N-Channel 23m Ω @ 30A, 10V 2.2V @ 10μA 1560pF @ 25V 21nC @ 10V 1ns 3 ns 16V 30A Tc 120A 18 mJ 4.5V 10V ±16V
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 HEXFET® Obsolete 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant No 8 8-SOIC (0.154, 3.90mm Width) Unknown 1.4986mm 3.9878mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE 2.5W 8.2 ns 2.5W Ta 14A SWITCHING 8.1 ns SILICON N-Channel 8.5m Ω @ 14A, 10V 2.35V @ 25μA 1040pF @ 15V 12nC @ 4.5V 11ns 7 ns 20V 30V 14A Ta 4.5V 10V ±20V
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0.00000000 download 26 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead Tin 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-N5 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 2.5W 25V 2.8W Ta 78W Tc 22A SWITCHING SILICON N-Channel 3.2m Ω @ 30A, 10V 2V @ 250μA 1200pF @ 12V 16nC @ 10V 2.8ns 20V 22A Ta 84A Tc 336A 20 mJ 4.5V 10V ±20V
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0.00000000 download Tube 1999 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 ROHS3 Compliant ULTRA LOW RESISTANCE 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 YES R-PDSO-G8 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.02Ohm 30V SILICON P-Channel 20m Ω @ 8A, 10V 1V @ 250μA 2320pF @ 15V 60nC @ 10V 8A 8A Tc 30V 50A 4.5V 10V ±20V
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0.00000000 download 12 Weeks Through Hole Tube 2003 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.6172mm ROHS3 Compliant Lead Free 30A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 Full Pack No SVHC 9.8mm 4.826mm Through Hole -55°C~175°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 1 TO-220AB ISOLATED Single 38W 7.3 ns 4V 45W Tc 98 ns 31A SWITCHING 0.024Ohm 2.5kV 47 ns SILICON N-Channel 24m Ω @ 17A, 10V 4V @ 250μA 1300pF @ 25V 65nC @ 10V 69ns 60 ns 20V 55V 55V 4 V 31A Tc 10V ±20V
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0.00000000 download 12 Weeks Through Hole Tube 2007 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 9.017mm 4.826mm 3.3MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 130W 150 ns 4V 300W Tc 75A SWITCHING 93 ns SILICON N-Channel 3.3m Ω @ 75A, 10V 4V @ 250μA 7960pF @ 25V 290nC @ 10V 20ns 78 ns 20V 55V 75A Tc 890A 940 mJ 10V ±20V
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0.00000000 download Through Hole Tube 2003 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant Contains Lead 100A 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-220-3 unknown Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE 3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 300W Tc 100A SWITCHING 0.0059Ohm SILICON N-Channel 4.7m Ω @ 80A, 10V 2V @ 250μA 7530pF @ 25V 230nC @ 10V 100A Tc 400A 810 mJ 10V ±20V
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0.00000000 download Surface Mount Cut Tape (CT) 2012 HEXFET® Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant Lead Free No 8 8-PowerTDFN No SVHC 3.3MOhm Surface Mount MOSFET (Metal Oxide) 3.6W Single 3.6W 21 ns 1V 3.3mOhm 8-PQFN (5x6) 26A 18 ns N-Channel 3.3mOhm @ 50A, 10V 2.5V @ 100μA 3720pF @ 25V 58nC @ 4.5V 75ns 13 ns 16V 40V 26A Ta 85A Tc 40V 3.72nF 3.3 mΩ
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0.00000000 Tube 2000 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 87W Tc SWITCHING 0.0095Ohm 30V SILICON N-Channel 12.5m Ω @ 15A, 10V 3V @ 250μA 1990pF @ 15V 19nC @ 4.5V 42A 62A Tc 30V 230A 40 mJ 4.5V 10V ±20V
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0.00000000 10 Weeks Tape & Reel (TR) 2003 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 300W Tc SWITCHING 0.002Ohm 40V SILICON N-Channel 2m Ω @ 75A, 10V 4V @ 250μA 6450pF @ 25V 240nC @ 10V 75A 75A Tc 40V 1080A 540 mJ 10V ±20V
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0.00000000 download Surface Mount Tape & Reel (TR) 1999 SIPMOS® Obsolete 1 (Unlimited) 8 EAR99 Non-RoHS Compliant Contains Lead -3.44A 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ -60V MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e0 Tin/Lead (Sn/Pb) DUAL GULL WING 235 NOT SPECIFIED 8 R-PDSO-G8 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE 2.5W Ta 3.44A 0.13Ohm SILICON P-Channel 130m Ω @ 3.44A, 10V 4V @ 1mA 875pF @ 25V 30nC @ 10V 3.44A Ta 60V 13.8A 150 mJ 10V ±20V
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