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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case Reach Compliance Code Mfr Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Capacitance HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Number of Channels Subcategory Gain Max Power Dissipation Power - Max Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Application Number of Phases JEDEC-95 Code Output Current Polarity Forward Current Case Connection Gain Bandwidth Product Polarity/Channel Type Power Dissipation-Max (Abs) Max Surge Current Element Configuration Power Dissipation Turn On Delay Time Drain to Source Resistance Max Breakdown Voltage Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Avalanche Energy Rating (Eas) Transistor Type Input Capacitance Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Collector Cutoff (Max) Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Continuous Collector Current Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) hFE Min DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition Resistor - Base (R1) Resistor - Emitter Base (R2) Noise Figure (dB Typ @ f)
MT3S113P(TE12L,F) MT3S113P(TE12L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) EAR99 RoHS Compliant TO-243AA Surface Mount 150°C TJ YES Other Transistors 10.5dB 1.6W Single NPN 1.6W NPN 5500MHz 5.3V 100mA 200 @ 30mA 5V 7.7GHz 1.45dB @ 1GHz
2SC4116-O(TE85L,F) 2SC4116-O(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 14 Weeks Cut Tape (CT) yes Discontinued 1 (Unlimited) RoHS Compliant SC-70, SOT-323 unknown Surface Mount 125°C TJ 100mW NPN 100nA ICBO 50V 150mA 70 @ 2mA 6V 250mV @ 10mA, 100mA 80MHz
TPN2R805PL,L1Q TPN2R805PL,L1Q Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSIX-H Active 1 (Unlimited) RoHS Compliant 8-PowerVDFN Surface Mount 175°C MOSFET (Metal Oxide) 2.67W Ta 104W Tc N-Channel 2.8m Ω @ 40A, 10V 2.4V @ 300μA 3.2nF @ 22.5V 39nC @ 10V 139A Ta 80A Tc 45V 4.5V 10V ±20V
TK34A10N1,S4X TK34A10N1,S4X Toshiba Semiconductor and Storage 1.3041
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0.00000000 12 Weeks Through Hole Tube 2014 U-MOSVIII-H yes Active 1 (Unlimited) 3 RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 6.000006g 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 1 1 TO-220AB ISOLATED Single 31 ns 35W Tc 34A SWITCHING 0.0095Ohm 50 ns SILICON N-Channel 9.5m Ω @ 17A, 10V 4V @ 500μA 2600pF @ 50V 38nC @ 10V 12ns 18 ns 20V 75A 34A Tc 100V 64 mJ 10V ±20V
CRS09(TE85L) CRS09(TE85L) Toshiba Semiconductor and Storage 0.0000
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0.00000000 Surface Mount Cut Tape (CT) 2009 Discontinued 1 (Unlimited) 2 EAR99 150°C -40°C Non-RoHS Compliant Contains Lead 1.5A No 2 FREE WHEELING DIODE SOD-123F Surface Mount 30V 90pF 8541.10.00.80 e0 TIN LEAD DUAL FLAT CRS09 2 Rectifier Diodes SILICON 1 Schottky GENERAL PURPOSE 1 1.5A Standard Single Fast Recovery =< 500ns, > 200mA (Io) 50μA @ 30V 460mV @ 1.5A -40°C~150°C 30V 1.5A 50μA 30V 30A
TK31J60W5,S1VQ TK31J60W5,S1VQ Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Through Hole Tube 2013 DTMOSIV Active 1 (Unlimited) 150°C -55°C RoHS Compliant TO-3P-3, SC-65-3 Through Hole 150°C TJ MOSFET (Metal Oxide) 3nF Single 230W 73mOhm TO-3P(N) 230W Tc 30.8A 165 ns N-Channel 88mOhm @ 15.4A, 10V 3.7V @ 1.5mA 3000pF @ 300V 105nC @ 10V 32ns 8.5 ns 30V 600V Super Junction 30.8A Ta 600V 3nF 10V ±30V 88 mΩ
TK3R2A10PL,S4X TK3R2A10PL,S4X Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Active 1 (Unlimited)
RN2119MFV,L3F RN2119MFV,L3F Toshiba Semiconductor and Storage 0.0000
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0.00000000 10 Weeks Tape & Reel (TR) Active 1 (Unlimited) SOT-723 Surface Mount 150mW PNP - Pre-Biased 100nA ICBO 50V 100mA 120 @ 1mA 5V 300mV @ 500μA, 5mA 1 k Ω
RN4988(TE85L,F) RN4988(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 10 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant 6-TSSOP, SC-88, SOT-363 Surface Mount YES BIP General Purpose Small Signal 200mW 2 NPN/PNP 0.2W SILICON 1 NPN, 1 PNP - Pre-Biased (Dual) 500nA 50V 100mA 80 @ 10mA 5V 300mV @ 250μA, 5mA 250MHz 200MHz 22k Ω 47k Ω
TPW4R50ANH,L1Q TPW4R50ANH,L1Q Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Surface Mount Tape & Reel (TR) 2015 U-MOSVIII-H Active 1 (Unlimited) RoHS Compliant 8 8-PowerVDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 25 ns 800mW Ta 142W Tc 92A 52 ns N-Channel 4.5m Ω @ 46A, 10V 4V @ 1mA 5200pF @ 50V 58nC @ 10V 9.6ns 13 ns 20V 92A Tc 100V 10V ±20V
SSM6K202FE,LF SSM6K202FE,LF Toshiba Semiconductor and Storage 0.3599
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 Active 1 (Unlimited) EAR99 RoHS Compliant No 6 SOT-563, SOT-666 Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 20 ns 500mW Ta 2.3A 31 ns N-Channel 85m Ω @ 1.5A, 4V 1V @ 1mA 270pF @ 10V 12V 30V 2.3A Ta 1.8V 4V ±12V
2SC3225,T6ALPSF(M 2SC3225,T6ALPSF(M Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD NPN 10μA ICBO 40V 2A 500 @ 400mA 1V 500mV @ 1mA, 300mA 220MHz
TK9A60D(STA4,Q,M) TK9A60D(STA4,Q,M) Toshiba Semiconductor and Storage 0.1971
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0.00000000 16 Weeks Through Hole Tube 2011 π-MOSVII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) TO-220SIS 45W Tc 9A N-Channel 830mOhm @ 4.5A, 10V 4V @ 1mA 1200pF @ 25V 24nC @ 10V 25ns 12 ns 30V 9A Ta 600V 1.2nF 10V ±30V 830 mΩ
2SA1162S-Y,LF 2SA1162S-Y,LF Toshiba Semiconductor and Storage 0.2503
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0.00000000 16 Weeks Surface Mount Tape & Reel (TR) 2009 Active 1 (Unlimited) 3 RoHS Compliant LOW NOISE TO-236-3, SC-59, SOT-23-3 unknown Surface Mount 125°C TJ DUAL GULL WING 2SA1162 R-PDSO-G3 150mW 150mW 1 SINGLE 80MHz PNP 50V 150mA 50V 300mV AMPLIFIER SILICON PNP 80MHz 100nA ICBO -5V 70 70 @ 2mA 6V 300mV @ 10mA, 100mA
TPC8066-H,LQ(S TPC8066-H,LQ(S Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSVII-H Active 1 (Unlimited) RoHS Compliant No 8 8-SOIC (0.154, 3.90mm Width) Surface Mount 150°C TJ MOSFET (Metal Oxide) 1W Ta 11A N-Channel 16m Ω @ 5.5A, 10V 2.3V @ 100μA 1100pF @ 10V 15nC @ 10V 2.1ns 2.3 ns 20V 11A Ta 30V 4.5V 10V ±20V
RN2607(TE85L,F) RN2607(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant SC-74, SOT-457 Surface Mount BIP General Purpose Small Signal 300mW 300mW 2 PNP 50V 100mA 50V 300mV SILICON 2 PNP - Pre-Biased (Dual) 100nA ICBO 80 @ 10mA 5V 300mV @ 250μA, 5mA 200MHz 10k Ω 47k Ω
2SA2154MFV-Y,L3F 2SA2154MFV-Y,L3F Toshiba Semiconductor and Storage 0.1582
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) Non-RoHS Compliant SOT-723 Surface Mount 150°C TJ 150mW PNP 100nA ICBO 50V 150mA 120 @ 2mA 6V 300mV @ 10mA, 100mA 80MHz
RN2901,LF(CT RN2901,LF(CT Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) Non-RoHS Compliant 6-TSSOP, SC-88, SOT-363 Surface Mount 200mW 2 PNP - Pre-Biased (Dual) 500nA 50V 100mA 30 @ 10mA 5V 300mV @ 250μA, 5mA 200MHz 4.7k Ω 4.7k Ω
SSM3J135TU,LF SSM3J135TU,LF Toshiba Semiconductor and Storage 0.2996
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSVI Active 1 (Unlimited) Non-RoHS Compliant 3-SMD, Flat Lead Surface Mount 150°C MOSFET (Metal Oxide) 500mW Ta P-Channel 103m Ω @ 1A, 4.5V 1V @ 1mA 270pF @ 10V 4.6nC @ 4.5V 3A Ta 20V 1.5V 4.5V ±8V
TPWR6003PL,L1Q TPWR6003PL,L1Q Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Tape & Reel (TR) U-MOSIX-H Active 1 (Unlimited) 8-PowerWDFN Surface Mount 175°C MOSFET (Metal Oxide) 960mW Ta 170W Tc N-Channel 600μ Ω @ 50A, 10V 2.1V @ 1mA 10000pF @ 15V 110nC @ 10V 150A Tc 30V 4.5V 10V ±20V
TPC8048-H(TE12L,Q) TPC8048-H(TE12L,Q) Toshiba Semiconductor and Storage 6.3800
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0.00000000 download Surface Mount Cut Tape (CT) 2009 U-MOSVI-H Discontinued 1 (Unlimited) RoHS Compliant No 8 8-SOIC (0.173, 4.40mm Width) Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 1.9W 1W Ta 16A N-Channel 6.9m Ω @ 8A, 10V 2.3V @ 1mA 7540pF @ 10V 87nC @ 10V 3.7ns 7.6 ns 20V 16A Ta 60V 4.5V 10V ±20V
RN4987,LF(CT RN4987,LF(CT Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant 6-TSSOP, SC-88, SOT-363 Surface Mount 6.010099mg 2 200mW 200mW NPN, PNP 50V US6 100mA 50V 300mV 1 NPN, 1 PNP - Pre-Biased (Dual) 500nA 50V 100mA -100mA -6V 80 80 @ 10mA 5V 300mV @ 250μA, 5mA 250MHz 200MHz 10kOhms 47kOhms
TPH5R906NH,L1Q TPH5R906NH,L1Q Toshiba Semiconductor and Storage 1.3239
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2012 U-MOSVIII-H Active 1 (Unlimited) RoHS Compliant 8 8-PowerVDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) 1.6W Ta 57W Tc 28A N-Channel 5.9m Ω @ 14A, 10V 4V @ 300μA 3100pF @ 30V 38nC @ 10V 28A Ta 60V 10V ±20V
RN4601(TE85L,F) RN4601(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) EAR99 RoHS Compliant SC-74, SOT-457 unknown Surface Mount BIP General Purpose Small Signal 300mW 300mW 2 NPN/PNP 50V 100mA 50V 300mV SILICON 1 NPN, 1 PNP - Pre-Biased (Dual) 100nA ICBO 30 @ 10mA 5V 300mV @ 250μA, 5mA 250MHz 4.7k Ω 4.7k Ω
2SA1020-Y(T6CANOAF 2SA1020-Y(T6CANOAF Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2010 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD PNP 1μA ICBO 50V 2A 70 @ 500mA 2V 500mV @ 50mA, 1A 100MHz
CTS05F40,L3F CTS05F40,L3F Toshiba Semiconductor and Storage 0.2551
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0.00000000 12 Weeks Tape & Reel (TR) Active RoHS Compliant SOD-882 Surface Mount Schottky Fast Recovery =< 500ns, > 200mA (Io) 15μA @ 40V 810mV @ 500mA 150°C Max 40V 500mA 28pF @ 0V 1MHz
RN4987FE,LXHF(CT RN4987FE,LXHF(CT Toshiba Semiconductor and Storage 0.0000
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0.00000000 SOT-563, SOT-666 Toshiba Semiconductor and Storage Surface Mount 100mW ES6 1 NPN, 1 PNP - Pre-Biased (Dual) 500nA 50V 100mA 80 @ 10mA, 5V 300mV @ 250μA, 5mA 250MHz, 200MHz 10kOhms 47kOhms
2SA1873-Y(TE85L,F) 2SA1873-Y(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Cut Tape (CT) 2009 Active 1 (Unlimited) RoHS Compliant 5-TSSOP, SC-70-5, SOT-353 unknown Surface Mount 125°C TJ Other Transistors 200mW 200mW PNP 80MHz Dual 50V 150mA 50V 300mV 2 PNP (Dual) Matched Pair, Common Emitter 80MHz 100nA ICBO -50V -5V 120 120 @ 2mA 6V 300mV @ 10mA, 100mA
TPC6107(TE85L,F,M) TPC6107(TE85L,F,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2009 U-MOSIV Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant Silver, Tin No 6 SOT-23-6 Thin, TSOT-23-6 Surface Mount 150°C TJ MOSFET (Metal Oxide) 2.2W 55mOhm VS-6 (2.9x2.8) 700mW Ta 4.5A 142 ns P-Channel 55mOhm @ 2.2A, 4.5V 1.2V @ 200μA 680pF @ 10V 9.8nC @ 5V 145ns 92 ns 12V -20V 4.5A Ta 20V 680pF 2V 4.5V ±12V 55 mΩ
1SS196(TE85L,F) 1SS196(TE85L,F) Toshiba Semiconductor and Storage 0.2679
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) EAR99 RoHS Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount 8541.10.00.70 125°C Rectifier Diodes 150mW 1 Standard 0.1A 100mA 2A Single Small Signal =< 200mA (Io), Any Speed 500nA @ 80V 1.2V @ 100mA 125°C Max 80V 100mA 85V 4 ns 3pF @ 0V 1MHz
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