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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Package / Case Impedance Mfr Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Capacitance HTS Code Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count JESD-30 Code Number of Channels Subcategory Max Power Dissipation Power - Max Diode Element Material Number of Elements Configuration Diode Type Output Current Polarity Forward Current Tolerance Case Connection Element Configuration Power Dissipation Turn On Delay Time Max Reverse Leakage Current Test Current ESD Protection Drain to Source Resistance Max Breakdown Voltage Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Zener Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Avalanche Energy Rating (Eas) Transistor Type Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Collector Cutoff (Max) Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Continuous Collector Current Emitter Base Voltage (VEBO) hFE Min Impedance-Max DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition Resistor - Base (R1) Resistor - Emitter Base (R2)
CLS03(TE16L,PCD,Q) CLS03(TE16L,PCD,Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2013 Obsolete 1 (Unlimited) L-FLAT™ Surface Mount Schottky Fast Recovery =< 500ns, > 200mA (Io) 1mA @ 60V 0.58V @ 10A -40°C~125°C 60V 10A DC 345pF @ 10V 1MHz
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0.00000000 12 Weeks Tape & Reel (TR) Active RoHS Compliant SC-76, SOD-323 Surface Mount Schottky Fast Recovery =< 500ns, > 200mA (Io) 60μA @ 40V 490mV @ 700mA 150°C Max 40V 1A 35pF @ 10V 1MHz
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0.00000000 12 Weeks Through Hole Tube 2014 π-MOSVIII Active 1 (Unlimited) 150°C -55°C RoHS Compliant TO-220-3 Full Pack Through Hole 6.000006g 150°C TJ MOSFET (Metal Oxide) 1 Single 55 ns 1.6Ohm TO-220SIS 45W Tc 7A 85 ns N-Channel 2Ohm @ 3.5A, 10V 4V @ 700μA 1350pF @ 25V 32nC @ 10V 20ns 15 ns 30V 7A Ta 900V 1.35nF 10V ±30V 2 Ω
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0.00000000 - TO-236-3, SC-59, SOT-23-3 Toshiba Semiconductor and Storage Surface Mount 320 mW SOT-23-3 NPN - Pre-Biased 500nA 50 V 100 mA 80 @ 10mA, 5V 300mV @ 500μA, 10mA 250 MHz 4.7 kOhms
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSVI-H Active 1 (Unlimited) 5 EAR99 RoHS Compliant 8 8-PowerVDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED S-PDSO-F5 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.8W 1.6W Ta 45W Tc 28A SWITCHING SILICON N-Channel 9.4m Ω @ 14A, 10V 2.3V @ 1mA 7540pF @ 10V 91nC @ 10V 20V 28A Ta 80V 255 mJ 4.5V 10V ±20V
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) Non-RoHS Compliant TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD NPN 1μA ICBO 50V 2A 70 @ 500mA 2V 500mV @ 50mA, 1A 100MHz
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0.00000000 download Surface Mount Tape & Reel (TR) 2014 Obsolete 1 (Unlimited) RoHS Compliant SC-75, SOT-416 Surface Mount 100mW 100mW 50V SSM 100mA 50V 300mV PNP - Pre-Biased 500nA 50V 100mA 30 @ 10mA 5V 300mV @ 250μA, 5mA 200MHz 10 kOhms 4.7 kOhms
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0.00000000 download Bulk 2013 Obsolete 1 (Unlimited) L-FLAT™ Surface Mount Schottky Fast Recovery =< 500ns, > 200mA (Io) 1mA @ 60V 0.58V @ 10A -40°C~125°C 60V 10A DC 345pF @ 10V 1MHz
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) Non-RoHS Compliant SOT-723 Surface Mount Schottky Small Signal =< 200mA (Io), Any Speed 20μA @ 10V 500mV @ 100mA 125°C Max 10V 100mA 20pF @ 0V 1MHz
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0.00000000 download Surface Mount Tape & Reel (TR) 2009 U-MOSV-H Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant No 8 8-PowerVDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) 8-TSON Advance (3.3x3.3) 700mW Ta 30W Tc 21A N-Channel 9.9mOhm @ 10.5A, 10V 2.3V @ 1mA 1900pF @ 10V 20nC @ 10V 2.2ns 3.4 ns 20V 21A Ta 30V 1.9nF 4.5V 10V ±20V 9.9 mΩ
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0.00000000 download Bulk 2010 Obsolete 1 (Unlimited) SC-71 Through Hole 150°C TJ 1W PNP 100nA ICBO 120V 800mA 80 @ 100mA 5V 1V @ 50mA, 500mA 120MHz
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0.00000000 download Bulk 2007 Obsolete 1 (Unlimited) TO-220-3 Full Pack Through Hole 150°C TJ 2W NPN 5μA ICBO 180V 2A 100 @ 100mA 5V 1V @ 100mA, 1A 200MHz
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 U-MOSVII-H Active 1 (Unlimited) 150°C -55°C RoHS Compliant 6 SOT-563, SOT-666 Surface Mount 150°C TJ MOSFET (Metal Oxide) 13 ns ES6 500mW Ta 1.8A 8 ns N-Channel 195mOhm @ 1A, 8V 1.2V @ 1mA 130pF @ 10V 1.1nC @ 4.2V 12V 1.8A Ta 40V 130pF 1.8V 8V ±12V 195 mΩ
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2010 π-MOSVII Active 1 (Unlimited) RoHS Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 80W 80W Tc 4A N-Channel 2 Ω @ 2A, 10V 4.4V @ 1mA 380pF @ 25V 9nC @ 10V 15ns 7 ns 30V 4A Ta 500V 10V ±30V
CMF04(TE12L,Q,M) CMF04(TE12L,Q,M) Toshiba Semiconductor and Storage 0.4350
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0.00000000 download Bulk 2011 Obsolete 1 (Unlimited) TO-220-3 Full Pack Through Hole 150°C TJ 2W NPN 1μA ICBO 50V 3A 70 @ 500mA 2V 600mV @ 200mA, 2A 80MHz
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0.00000000 download 11 Weeks Surface Mount Tape & Reel (TR) 2009 Active 1 (Unlimited) 150°C -65°C RoHS Compliant No 3 SOT-723 Surface Mount RN211* 150mW PNP Single 150mW 50V 100mA 50V 50V PNP - Pre-Biased 100nA ICBO -100mA -5V 120 120 @ 1mA 5V 300mV @ 500μA, 5mA 1 k Ω
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