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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Package / Case Reach Compliance Code Impedance Resistance Mfr Mounting Type Weight Operating Temperature Technology Input Type Capacitance Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Surface Mount JESD-30 Code Operating Temperature (Max) Number of Channels Subcategory Max Power Dissipation Power - Max Diode Element Material Number of Elements Configuration Diode Type Application Number of Phases Polarity Forward Current Forward Voltage Tolerance Polarity/Channel Type Power Dissipation-Max (Abs) Max Surge Current Element Configuration Power Dissipation Turn On Delay Time Max Reverse Leakage Current Drain to Source Resistance Max Breakdown Voltage Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Diode Configuration Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Current-Max Reverse Recovery Time Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Zener Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Transistor Type Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Collector Cutoff (Max) Vce(on) (Max) @ Vge, Ic Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Continuous Collector Current Test Condition Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) hFE Min Impedance-Max Zener Current DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition Resistor - Base (R1) Resistor - Emitter Base (R2) Noise Figure (dB Typ @ f)
RN1403,LXHF RN1403,LXHF Toshiba Semiconductor and Storage 0.0000
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0.00000000 Automotive, AEC-Q101 TO-236-3, SC-59, SOT-23-3 Toshiba Semiconductor and Storage Surface Mount 200 mW S-Mini NPN - Pre-Biased 500nA 50 V 100 mA 70 @ 10mA, 5V 300mV @ 250μA, 5mA 250 MHz 22 kOhms 22 kOhms
TK8Q60W,S1VQ TK8Q60W,S1VQ Toshiba Semiconductor and Storage 2.7406
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0.00000000 16 Weeks Through Hole Tube 2014 DTMOSIV Active 1 (Unlimited) 150°C -55°C RoHS Compliant 3 TO-251-3 Stub Leads, IPak 500mOhm Through Hole 150°C TJ MOSFET (Metal Oxide) 570pF Single 420mOhm I-PAK 80W Tc 8A 70 ns N-Channel 500mOhm @ 4A, 10V 3.7V @ 400μA 570pF @ 300V 18.5nC @ 10V 20ns 5.5 ns 30V Super Junction 8A Ta 600V 570pF 10V ±30V 500 mΩ
CRZ12(TE85L,Q,M) CRZ12(TE85L,Q,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) RoHS Compliant No 2 SOD-123F 30Ohm Surface Mount -40°C~150°C TJ 700mW ±10% Single 700mW 10μA 10μA @ 8V 1V @ 200mA 12V 30Ohm 10mA
RN2423(TE85L,F) RN2423(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 10 Weeks Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount YES BIP General Purpose Small Signal 200mW 1 PNP 0.2W SILICON PNP - Pre-Biased 500nA 50V 800mA 70 @ 100mA 1V 250mV @ 1mA, 50mA 200MHz 4.7 k Ω 4.7 k Ω
2SA1020-Y(T6TR1,AF 2SA1020-Y(T6TR1,AF Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2010 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD PNP 1μA ICBO 50V 2A 70 @ 500mA 2V 500mV @ 50mA, 1A 100MHz
TK065N65Z,S1F TK065N65Z,S1F Toshiba Semiconductor and Storage 6.0401
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0.00000000 16 Weeks Tube DTMOSVI Active 1 (Unlimited) RoHS Compliant TO-247-3 Through Hole 150°C MOSFET (Metal Oxide) 270W Tc N-Channel 65m Ω @ 19A, 10V 4V @ 1.69mA 3650pF @ 300V 62nC @ 10V 38A Ta 650V 10V ±30V
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant 3-SMD, Flat Lead Surface Mount 150°C MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 800mW Ta N-Channel 630m Ω @ 200mA, 5V 1V @ 1mA 46pF @ 10V 1.23nC @ 4V 500mA Ta 20V 1.5V 5V ±10V
CCS15S30,L3F CCS15S30,L3F Toshiba Semiconductor and Storage 0.2848
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2015 yes Active 1 (Unlimited) 2 125°C -55°C RoHS Compliant 2 0603 (1608 Metric) unknown Surface Mount BOTTOM NO LEAD SILICON 1 Schottky GENERAL PURPOSE 1 1.5A Single Fast Recovery =< 500ns, > 200mA (Io) 500μA @ 30V 400mV @ 1A 125°C Max 20V 1.5A 30V 5A 500μA 200pF @ 0V 1MHz
2SB1457,T6TOTOF(J 2SB1457,T6TOTOF(J Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW PNP 10μA ICBO 100V 2A 2000 @ 1A 2V 1.5V @ 1mA, 1A 50MHz
TK6A65W,S5X TK6A65W,S5X Toshiba Semiconductor and Storage 6.7410
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0.00000000 16 Weeks Through Hole Tube 2015 DTMOSIV Active 1 (Unlimited) RoHS Compliant TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) TO-220SIS 30W Tc 5.8A N-Channel 1Ohm @ 2.9A, 10V 3.5V @ 180μA 390pF @ 300V 11nC @ 10V 5.8A Ta 650V 390pF 10V ±30V 1 Ω
CMS15I40A(TE12L,QM CMS15I40A(TE12L,QM Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) 150°C -55°C RoHS Compliant SOD-128 Surface Mount Schottky 490mV Single Fast Recovery =< 500ns, > 200mA (Io) 100μA @ 40V 490mV @ 1.5A 150°C Max 25A 40V 1.5A 62pF @ 10V 1MHz
RN1906,LXHF(CT RN1906,LXHF(CT Toshiba Semiconductor and Storage 0.0000
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0.00000000 Automotive, AEC-Q101 6-TSSOP, SC-88, SOT-363 Toshiba Semiconductor and Storage Surface Mount 200mW US6 2 NPN - Pre-Biased (Dual) 500nA 50V 100mA 80 @ 10mA, 5V 300mV @ 250μA, 5mA 250MHz 4.7kOhms 47kOhms
TK25E06K3,S1X(S TK25E06K3,S1X(S Toshiba Semiconductor and Storage 3.7468
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0.00000000 download 12 Weeks Through Hole Tube 2009 U-MOSIV Active 1 (Unlimited) RoHS Compliant TO-220-3 Through Hole 150°C TJ MOSFET (Metal Oxide) 60W 14Ohm TO-220-3 60W Tc 25A N-Channel 18mOhm @ 12.5A, 10V 29nC @ 10V 60V 25A Ta 60V 18 mΩ
TK28V65W,LQ TK28V65W,LQ Toshiba Semiconductor and Storage 6.0407
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0.00000000 16 Weeks Tape & Reel (TR) Active 1 (Unlimited)
SSM3K37FS,LF SSM3K37FS,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 U-MOSIII Active 1 (Unlimited) RoHS Compliant SC-75, SOT-416 unknown Surface Mount 150°C TA MOSFET (Metal Oxide) 100mW Ta 200mA N-Channel 2.2 Ω @ 100mA, 4.5V 1V @ 1mA 12pF @ 10V 200mA Ta 20V 1.5V 4.5V ±10V
TK5Q60W,S1VQ TK5Q60W,S1VQ Toshiba Semiconductor and Storage 9.3475
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0.00000000 16 Weeks Through Hole Tube 2014 DTMOSIV Active 1 (Unlimited) RoHS Compliant 3 TO-251-3 Stub Leads, IPak 900mOhm Through Hole 150°C TJ MOSFET (Metal Oxide) Single 60W Tc 5.4A 50 ns N-Channel 900m Ω @ 2.7A, 10V 3.7V @ 270μA 380pF @ 300V 10.5nC @ 10V 18ns 7 ns 30V Super Junction 5.4A Ta 600V 10V ±30V
HN1C01FU-Y(T5L,F,T HN1C01FU-Y(T5L,F,T Toshiba Semiconductor and Storage 0.0000
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0.00000000 Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant No 6 6-TSSOP, SC-88, SOT-363 Surface Mount 125°C TJ 200mW 200mW 50V 150mA 50V 250mV 2 NPN (Dual) 100nA ICBO 60V 120 @ 2mA 6V 250mV @ 10mA, 100mA 80MHz
TK50P03M1(T6RSS-Q) TK50P03M1(T6RSS-Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2011 U-MOSVI-H Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ MOSFET (Metal Oxide) DP 47W Tc 50A N-Channel 7.5mOhm @ 25A, 10V 2.3V @ 200μA 1700pF @ 10V 25.3nC @ 10V 20ns 22 ns 20V 50A Ta 30V 1.7nF 4.5V 10V ±20V 7.5 mΩ
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole TO-92MOD
TPC6111(TE85L,F,M) TPC6111(TE85L,F,M) Toshiba Semiconductor and Storage 0.1016
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSV Active 1 (Unlimited) RoHS Compliant 6 SOT-23-6 Thin, TSOT-23-6 unknown Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 2.2W 700mW Ta 5.5A P-Channel 40m Ω @ 2.8A, 4.5V 1V @ 1mA 700pF @ 10V 10nC @ 5V 7ns 30 ns 8V 5.5A Ta 20V 1.5V 4.5V ±8V
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0.00000000 10 Weeks Tape & Reel (TR) Active 1 (Unlimited) 3 RoHS Compliant SOT-723 Surface Mount DUAL FLAT NOT SPECIFIED NOT SPECIFIED YES R-PDSO-F3 150mW 1 SINGLE WITH BUILT-IN RESISTOR PNP SWITCHING SILICON PNP - Pre-Biased 100nA ICBO 50V 100mA 120 @ 1mA 5V 300mV @ 500μA, 5mA 100 k Ω
HN2D03F(TE85L,F) HN2D03F(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Cut Tape (CT) 2014 Active 1 (Unlimited) EAR99 RoHS Compliant SC-74, SOT-457 unknown Surface Mount 150°C Other Diodes 300mW Standard 100mA 2A Small Signal =< 200mA (Io), Any Speed 100μA @ 400V 1.3V @ 100mA 150°C Max 400V 100mA 3 Independent 500 ns
TK35N65W,S1F TK35N65W,S1F Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Through Hole Tube 2014 DTMOSIV Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-247-3 Through Hole 38.000013g 150°C TJ MOSFET (Metal Oxide) 1 Single 70 ns 68mOhm TO-247 270W Tc 35A 150 ns N-Channel 80mOhm @ 17.5A, 10V 3.5V @ 2.1mA 4100pF @ 300V 100nC @ 10V 30ns 8 ns 30V 650V 35A Ta 650V 4.1nF 10V ±30V 80 mΩ
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant Silver, Tin 3 SC-75, SOT-416 unknown Surface Mount 125°C TJ 100mW 100mW 12V 80mA 12V 12V NPN 20V 3V 80 @ 20mA 10V 7GHz 1dB @ 500MHz
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0.00000000 download Surface Mount Tube 2007 Obsolete 1 (Unlimited) RoHS Compliant Lead Free 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ Standard GT10 60W 60W TO-220SM 200 ns 10A 600V 2.7V 2.7V @ 15V, 10A 600V 10A 300V, 10A, 100Ohm, 15V 20A 400ns/400ns
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0.00000000 download Bulk 2010 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD PNP 1μA ICBO 50V 2A 70 @ 500mA 2V 500mV @ 50mA, 1A 100MHz
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0.00000000 Tape & Reel (TR) 2014 Obsolete 1 (Unlimited) RoHS Compliant SOT-563, SOT-666 unknown Surface Mount YES BIP General Purpose Small Signal 100mW 2 PNP 0.1W SILICON 2 PNP - Pre-Biased (Dual) 100nA ICBO 50V 100mA 30 @ 10mA 5V 300mV @ 250μA, 5mA 200MHz 4.7k Ω 4.7k Ω
2SA1020-Y,F(J 2SA1020-Y,F(J Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW PNP 1μA ICBO 50V 2A 70 @ 500mA 2V 500mV @ 50mA, 1A 100MHz
SSM6N62TU,LF SSM6N62TU,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant 6-SMD, Flat Leads Surface Mount 150°C 500mW Ta 2 N-Channel (Dual) 85m Ω @ 800mA, 4.5V 1V @ 1mA 177pF @ 10V 2nC @ 4.5V Logic Level Gate, 1.2V Drive 800mA Ta 20V
RN4904FE,LF(CT RN4904FE,LF(CT Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Cut Tape (CT) Discontinued 1 (Unlimited) RoHS Compliant SOT-563, SOT-666 Surface Mount 3.005049mg 2 100mW NPN, PNP 50V 1 NPN, 1 PNP - Pre-Biased (Dual) 500nA 100mA 100mA 10V 80 80 @ 10mA 5V 300mV @ 250μA, 5mA 250MHz 200MHz 47k Ω 47k Ω
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