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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Voltage - Rated Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Frequency Height Width Mounting Type Operating Temperature Voltage - Rated DC Technology Capacitance Gain Max Power Dissipation Number of Elements Diode Type Output Current Polarity Forward Current Forward Voltage Current Rating (Amps) Max Surge Current Element Configuration Power Dissipation Turn On Delay Time Max Reverse Leakage Current Threshold Voltage Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Continuous Drain Current (ID) Capacitance @ Vr, F Turn-Off Delay Time FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Nominal Vgs Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Current - Test Transistor Type Voltage - Test Input Capacitance Power - Output Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
PXFC191507FC-V1-R250 PXFC191507FC-V1-R250 Cree/Wolfspeed 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant
PTVA123501FC-V1-R0 PTVA123501FC-V1-R0 Cree/Wolfspeed 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant 105V H-37248-4 1.2GHz~1.4GHz 17dB H-37248-4 150mA LDMOS 50V 350W
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0.00000000 4 Weeks Through Hole Tube 2009 Zero Recovery™ Obsolete 1 (Unlimited) 175°C -55°C 10.41mm RoHS Compliant Lead Free 10A No 2 TO-220-2 Unknown 15.621mm 4.699mm Through Hole 1.2kV 1nF 312W Silicon Carbide Schottky 10A Standard 10A 1.8V 250A Single 200μA TO-220-2 No Recovery Time > 500mA (Io) 200μA @ 1200V 1.8V @ 10A -55°C~175°C 1.2kV 10A 1mA 1.2kV 250A 250A 1200V 31A DC 0 s 1000pF @ 0V 1MHz
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0.00000000 download Tape & Reel (TR) Not For New Designs 1 (Unlimited) RoHS Compliant 65V H-37248-4 2.4GHz 17dB 120mA LDMOS (Dual) 30V 110W
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant
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0.00000000 download 4 Weeks Surface Mount Tube 2009 Zero Recovery™ Obsolete 1 (Unlimited) 175°C -55°C 7.34mm RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Unknown 2.388mm 6.248mm Surface Mount 136W Silicon Carbide Schottky 5A 1.8V 100A Single 200μA TO-252-2 No Recovery Time > 500mA (Io) 200μA @ 1200V 1.8V @ 5A -55°C~175°C 1.2kV 10A 200μA 1.2kV 100A 1200V 17.5A DC 0 s 455pF @ 0V 1MHz
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0.00000000 16 Weeks Tube 2006 C3M™ Active 1 (Unlimited) 150°C RoHS Compliant 7 TO-263-8, D2Pak (7 Leads + Tab), TO-263CA No SVHC Surface Mount -55°C~150°C TJ SiCFET (Silicon Carbide) 2.1V 280mOhm D2PAK-7 50W Tc 11A N-Channel 360mOhm @ 7.5A, 15V 3.5V @ 1.2mA 150pF @ 600V 9.5nC @ 15V 11A Tc 900V 15V +18V, -8V
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0.00000000 Tray Discontinued 1 (Unlimited) RoHS Compliant 65V 2.69GHz 18dB 900mA LDMOS 28V 28W
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0.00000000 Strip Not For New Designs 1 (Unlimited) RoHS Compliant 65V 2-Flatpack, Fin Leads 725MHz~770MHz 19dB 10μA 1.9A LDMOS 30V 240W
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0.00000000 8 Weeks Tape & Reel (TR) 2015 GaN Active 3 (168 Hours) RoHS Compliant 125V 12-VFDFN Exposed Pad 6GHz 21dB 12-DFN (4x3) 60mA HEMT 50V 15W
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0.00000000 16 Weeks Tube C3M™ Active 1 (Unlimited) RoHS Compliant TO-247-4 Through Hole -55°C~150°C TJ SiCFET (Silicon Carbide) 75mOhm TO-247-4L 113.6W Tc N-Channel 90mOhm @ 20A, 15V 4V @ 5mA 1350pF @ 1000V 51nC @ 15V 30A Tc 1200V 15V +19V, -8V
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0.00000000 GaN Active 1 (Unlimited) 84V 440196 2.3GHz~2.9GHz 14.5dB 440196 150mA HEMT 28V 30W
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0.00000000 Active 65V PG-HB2SOF-8-1 1.805GHz~1.88GHz 16dB 10μA PG-HB2SOF-8-1 800mA LDMOS 28V 320W
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0.00000000 8 Weeks Tray 2015 GaN Active 1 (Unlimited) RoHS Compliant 125V 36A 440117 1.2GHz~1.4GHz 17dB 36A 440117 500mA HEMT 50V 500W
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0.00000000 8 Weeks Tray 2017 Active 1 (Unlimited) 125V 440199 3GHz 20.1dB 18.7A 440199 HEMT 218W
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0.00000000 GaN Active 1 (Unlimited) 84V 440117 1.8GHz~2.3GHz 15dB 440117 1A HEMT 28V 240W
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0.00000000 6 Weeks Through Hole Tube 2013 Z-Rec® Active 1 (Unlimited) 175°C -55°C 10.41mm RoHS Compliant No 2 TO-220-2 Unknown 15.621mm 4.699mm Through Hole 79W Silicon Carbide Schottky 6A 1.8V 200A Single 60μA No Recovery Time > 500mA (Io) 60μA @ 650V 1.8V @ 6A -55°C~175°C 650V 6A 220μA 650V 200A 70A 19A DC 0ns 294pF @ 0V 1MHz
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0.00000000 8 Weeks GaN Active 1 (Unlimited) RoHS Compliant 125V 440193 3.1GHz~3.5GHz 13dB 440193 200mA HEMT 28V 47.6dBm
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0.00000000 14 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant
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0.00000000 download 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant
C3D08060G-TR C3D08060G-TR Cree/Wolfspeed 0.0000
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0.00000000 6 Weeks Tape & Reel (TR) 2016 Z-Rec® Active 3 (168 Hours) RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount Schottky Fast Recovery =< 500ns, > 200mA (Io) 50μA @ 600V 1.8V @ 6A -55°C~175°C 600V 24A DC 26pF @ 400V 1MHz
CGH31240F CGH31240F Cree/Wolfspeed 0.0000
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0.00000000 8 Weeks GaN Active 1 (Unlimited) RoHS Compliant 120V 440201 2.7GHz~3.1GHz 12dB 440201 1A HEMT 28V 250W
C3D04065E-TR C3D04065E-TR Cree/Wolfspeed 0.0000
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0.00000000 26 Weeks Tape & Reel (TR) 2016 Z-Rec® Active 1 (Unlimited) RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount Silicon Carbide Schottky No Recovery Time > 500mA (Io) 60μA @ 650V 1.8V @ 4A -55°C~175°C 650V 13.5A DC 0ns 251pF @ 0V 1MHz
PXAC192908FV-V1 PXAC192908FV-V1 Cree/Wolfspeed 0.0000
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0.00000000 12 Weeks Active 1 (Unlimited) RoHS Compliant
CGHV27100F CGHV27100F Cree/Wolfspeed 0.0000
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0.00000000 12 Weeks Tube 2015 GaN Obsolete 1 (Unlimited) RoHS Compliant 6A 440162 2.5GHz~2.7GHz 18dB 500mA HEMT 50V 100W
C4D10120E-TR C4D10120E-TR Cree/Wolfspeed 6.6442
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0.00000000 26 Weeks Tape & Reel (TR) 2017 Z-Rec® Active 3 (168 Hours) RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount Silicon Carbide Schottky No Recovery Time > 500mA (Io) 250μA @ 1200V 1.8V @ 10A -55°C~175°C 1200V 33A DC 0ns 754pF @ 0V 1MHz
CMF10120D CMF10120D Cree/Wolfspeed 12.1079
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0.00000000 download Through Hole Tube 2012 Z-FET™ Obsolete 1 (Unlimited) 135°C -55°C 16.13mm RoHS Compliant No 3 TO-247-3 Unknown 21.1mm 5.21mm Through Hole -55°C~135°C TJ SiCFET (Silicon Carbide) 1 Single 152W 8.8 ns 2.5V 160mOhm TO-247 134W Tc 24A 38 ns N-Channel 220mOhm @ 10A, 20V 4V @ 500μA 928pF @ 800V 47.1nC @ 20V 34ns 21 ns 25V 1.2kV 2.5 V 24A Tc 1200V 928pF 20V +25V, -5V 220 mΩ
C2M0045170D C2M0045170D Cree/Wolfspeed 82.1831
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0.00000000 16 Weeks Tube 2014 C2M™ Active Not Applicable 150°C RoHS Compliant 3 TO-247-3 No SVHC Through Hole -40°C~150°C TJ SiCFET (Silicon Carbide) 2.6V 45mOhm TO-247-3 520W Tc 72A N-Channel 70mOhm @ 50A, 20V 4V @ 18mA 3672pF @ 1kV 188nC @ 20V 72A Tc 1700V 20V +25V, -10V
C2M1000170J-TR C2M1000170J-TR Cree/Wolfspeed 3.6942
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0.00000000 23 Weeks Tape & Reel (TR) 2015 C2M™ Active 1 (Unlimited) RoHS Compliant TO-263-8, D2Pak (7 Leads + Tab), TO-263CA Surface Mount -55°C~150°C TJ SiCFET (Silicon Carbide) D2PAK-7 78W Tc N-Channel 1.4Ohm @ 2A, 20V 3.1V @ 500μA (Typ) 200pF @ 1000V 13nC @ 20V 5.3A Tc 1700V 20V +25V, -10V
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