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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Voltage - Rated Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Reach Compliance Code Frequency Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Capacitance HTS Code Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Gain Max Power Dissipation Number of Elements Configuration Diode Type Application Number of Phases JEDEC-95 Code Non-rep Pk Forward Current-Max Output Current Polarity Forward Current Forward Voltage Case Connection Current Rating (Amps) Max Surge Current Element Configuration Power Dissipation Turn On Delay Time Max Reverse Leakage Current Threshold Voltage Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Continuous Drain Current (ID) Capacitance @ Vr, F Turn-Off Delay Time FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Nominal Vgs Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Current - Test Transistor Type Voltage - Test Input Capacitance Power - Output Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
CGHV14500F CGHV14500F Cree/Wolfspeed 0.0000
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0.00000000 8 Weeks Tray 2015 GaN Active 1 (Unlimited) RoHS Compliant 125V 36A 440117 1.2GHz~1.4GHz 17dB 36A 440117 500mA HEMT 50V 500W
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant 105V H-33288-2 960MHz~1.215GHz 17.5dB H-33288-2 200mA LDMOS 50V 450W
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0.00000000 download Surface Mount Tube 2009 Zero Recovery™ Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant Lead Free 4A 3 TO-252-3, DPak (2 Leads + Tab), SC-63 unknown Surface Mount 600V 220pF 8541.10.00.80 SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 175°C Rectifier Diodes Not Qualified 1 SINGLE Silicon Carbide Schottky EFFICIENCY 1 110A 4A Standard CATHODE No Recovery Time > 500mA (Io) 200μA @ 600V 1.8V @ 4A -55°C~175°C 600V 7A 0 s 220pF @ 0V 1MHz
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0.00000000 download Through Hole Tube 2009 Zero Recovery™ Obsolete 1 (Unlimited) 2 EAR99 175°C -55°C RoHS Compliant Lead Free 6A TO-220-2 unknown Through Hole 600V 340pF 8541.10.00.80 NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T2 Rectifier Diodes Not Qualified 1 Silicon Carbide Schottky EFFICIENCY 1 TO-220AC 6A Standard 15A 1.8V CATHODE Single No Recovery Time > 500mA (Io) 200μA @ 600V 1.8V @ 6A -55°C~175°C 600V 10A 200μA 600V 200A 0 s 340pF @ 0V 1MHz
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0.00000000 6 Weeks Surface Mount Tube 2009 Zero Recovery™ Active -55°C RoHS Compliant Lead Free 1A No 2 TO-252-3, DPak (2 Leads + Tab), SC-63 Unknown Surface Mount 600V 80pF CSD01060 21.4W Silicon Carbide Schottky 1A Standard 1A 1.8V 32A Single 100μA No Recovery Time > 500mA (Io) 100μA @ 600V 1.8V @ 1A -55°C~175°C 600V 1A 600V 4A DC 0ns 80pF @ 0V 1MHz
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0.00000000 6 Weeks Surface Mount Tube 2012 Z-Rec® Active 175°C -55°C 7.34mm RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Unknown 2.388mm 6.248mm Surface Mount 136W Silicon Carbide Schottky 16A 1.8V 71A Single 250μA TO-252-2 No Recovery Time > 500mA (Io) 250μA @ 1200V 1.8V @ 10A -55°C~175°C 1.2kV 10A 350μA 1.2kV 71A 46A 1200V 33A DC 0 s 754pF @ 0V 1MHz
CMF10120D CMF10120D Cree/Wolfspeed 12.1079
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0.00000000 download Through Hole Tube 2012 Z-FET™ Obsolete 1 (Unlimited) 135°C -55°C 16.13mm RoHS Compliant No 3 TO-247-3 Unknown 21.1mm 5.21mm Through Hole -55°C~135°C TJ SiCFET (Silicon Carbide) 1 Single 152W 8.8 ns 2.5V 160mOhm TO-247 134W Tc 24A 38 ns N-Channel 220mOhm @ 10A, 20V 4V @ 500μA 928pF @ 800V 47.1nC @ 20V 34ns 21 ns 25V 1.2kV 2.5 V 24A Tc 1200V 928pF 20V +25V, -5V 220 mΩ
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0.00000000 Tape & Reel (TR) Obsolete 1 (Unlimited) 65V H-33288-6 2.17GHz 18.1dB 1.85A LDMOS 30V 55W
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant 65V H-37275G-6/2 1.805GHz~1.88GHz 14dB 10μA H-37275G-6/2 720mA LDMOS 28V 130W
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0.00000000 6 Weeks Through Hole Tube 2013 Z-Rec® Active 1 (Unlimited) 175°C -55°C 10.41mm RoHS Compliant No 2 TO-220-2 Unknown 15.621mm 4.699mm Through Hole 79W Silicon Carbide Schottky 6A 1.8V 200A Single 60μA No Recovery Time > 500mA (Io) 60μA @ 650V 1.8V @ 6A -55°C~175°C 650V 6A 220μA 650V 200A 70A 19A DC 0ns 294pF @ 0V 1MHz
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0.00000000 Tray Discontinued 3 (168 Hours) RoHS Compliant 65V H-37248-4 2.02GHz 17.7dB H-37248-4 360mA LDMOS 28V 22.5W
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0.00000000 6 Weeks Through Hole Tube 2009 Z-Rec® Active 1 (Unlimited) 175°C -55°C 10.41mm RoHS Compliant No 2 TO-220-2 Unknown 15.621mm 4.699mm Through Hole 75W Silicon Carbide Schottky 4A 1.7V 110A Single 50μA TO-220-2 No Recovery Time > 500mA (Io) 50μA @ 600V 1.8V @ 4A -55°C~175°C 600V 4A 50μA 600V 110A 31.9A 600V 13.5A DC 0 s 251pF @ 0V 1MHz
C3D04065E-TR C3D04065E-TR Cree/Wolfspeed 0.0000
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0.00000000 26 Weeks Tape & Reel (TR) 2016 Z-Rec® Active 1 (Unlimited) RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount Silicon Carbide Schottky No Recovery Time > 500mA (Io) 60μA @ 650V 1.8V @ 4A -55°C~175°C 650V 13.5A DC 0ns 251pF @ 0V 1MHz
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0.00000000 6 Weeks Tape & Reel (TR) 2016 Z-Rec® Active 3 (168 Hours) RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount Schottky TO-252-2 Fast Recovery =< 500ns, > 200mA (Io) 50μA @ 600V 1.7V @ 3A -55°C~175°C 600V 11A DC 155pF @ 0V 1MHz
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0.00000000 Active 65V H-37248G-4/2 1.805GHz~1.88GHz 20dB 10μA H-37248G-4/2 900mA LDMOS 28V 175W
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0.00000000 GaN Active 125V H-87265J-2 2.11GHz~2.2GHz 19dB H-87265J-2 320mA HEMT 48V 270W
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0.00000000 6 Weeks Through Hole Tube 2009 Z-Rec® Active 1 (Unlimited) 175°C -55°C 10.41mm RoHS Compliant No 2 TO-220-2 Unknown 15.621mm 4.699mm Through Hole 39.5W Silicon Carbide Schottky 4A 1.7V 65A Single 50μA TO-220-2 No Recovery Time > 500mA (Io) 50μA @ 600V 1.7V @ 2A -55°C~175°C 600V 2A 100μA 600V 65A 21A 600V 5A DC 0 s 120pF @ 0V 1MHz
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0.00000000 7 Weeks Tape & Reel (TR) 2001 Z-Rec® Active 3 (168 Hours) RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount Silicon Carbide Schottky TO-252-2 No Recovery Time > 500mA (Io) 50μA @ 1200V 1.8V @ 2A -55°C~175°C 1200V 10A DC 0ns 167pF @ 0V 1MHz
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0.00000000 6 Weeks Through Hole Tube 2012 Z-Rec® Active 1 (Unlimited) 175°C -55°C 10.3mm RoHS Compliant Lead Free 2 TO-220-2 Full Pack, Isolated Tab Unknown 16.07mm 4.9mm Through Hole 12.5W Silicon Carbide Schottky 3A 1.7V 100A Single 50μA TO-220-F2 No Recovery Time > 500mA (Io) 50μA @ 600V 1.7V @ 3A -55°C~175°C 600V 3A 100μA 600V 100A 28A 600V 5A DC 0 s 155pF @ 0V 1MHz
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0.00000000 download 16 Weeks Through Hole Bulk 2013 C2M™ Active 1 (Unlimited) 150°C -55°C 16.13mm RoHS Compliant No 3 TO-247-3 Unknown 21.1mm 5.21mm Through Hole -55°C~150°C TJ SiCFET (Silicon Carbide) 1 Single 208W 12 ns 3.2V 80mOhm TO-247-3 192W Tc 31.6A 23.2 ns N-Channel 98mOhm @ 20A, 20V 4V @ 5mA 950pF @ 1000V 62nC @ 5V 25V 1.2kV 1.7 V 36A Tc 1200V 950pF 20V +25V, -10V 98 mΩ
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0.00000000 12 Weeks Tape & Reel (TR) Active 3 (168 Hours) RoHS Compliant
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0.00000000 Active 3 (168 Hours) 65V H-37248C-4 2.3GHz~2.4GHz 15.5dB 10μA 230mA LDMOS (Dual), Common Source 28V 100W
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant
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0.00000000 8 Weeks Tape & Reel (TR) GaN Active 1 (Unlimited) RoHS Compliant 125V H-37265J-2 960MHz~1.215GHz 19.5dB H-37265J-2 100mA HEMT 50V 400W
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0.00000000 download Tape & Reel (TR) Not For New Designs 1 (Unlimited) RoHS Compliant 65V 2-Flatpack, Fin Leads 960MHz PTFA092201 18.5dB 10μA 1.85A LDMOS 30V 220W
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0.00000000 8 Weeks Tray GaN Active 1 (Unlimited) RoHS Compliant 100V 13A 440210 7.9GHz~9.6GHz 50Ohm 17dB 500mA HEMT 40V 32W
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