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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Voltage - Rated Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Reach Compliance Code Frequency Height Width Mounting Type Operating Temperature Technology Operating Mode Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Surface Mount JESD-30 Code Gain Max Power Dissipation Number of Elements Configuration Diode Type Forward Current Forward Voltage Case Connection Current Rating (Amps) Max Surge Current Element Configuration Power Dissipation Turn On Delay Time Max Reverse Leakage Current Threshold Voltage Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Diode Configuration Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Natural Thermal Resistance Reverse Recovery Time Power Dissipation-Max Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Current - Test Transistor Type Voltage - Test Noise Figure Input Capacitance Power - Output Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
C3M0030090K C3M0030090K Cree/Wolfspeed 39.2324
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0.00000000 16 Weeks Tube C3M™ Active Not Applicable Non-RoHS Compliant TO-247-4 Through Hole -55°C~150°C TJ SiCFET (Silicon Carbide) 30mOhm TO-247-4 149W Tc N-Channel 39mOhm @ 35A, 15V 3.5V @ 11mA 1864pF @ 600V 87nC @ 15V 63A Tc 900V 15V +15V, -4V
PXAC210552FC-V1-R2 PXAC210552FC-V1-R2 Cree/Wolfspeed 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant
C6D06065A C6D06065A Cree/Wolfspeed 3.3824
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0.00000000 4 Weeks Z-Rec® Active 1 (Unlimited) RoHS Compliant TO-220-2 Through Hole Silicon Carbide Schottky TO-220-2 No Recovery Time > 500mA (Io) 30μA @ 650V 1.5V @ 6A -55°C~175°C 650V 24A DC 0ns 394pF @ 0V 1MHz
CGH55015F1 CGH55015F1 Cree/Wolfspeed 0.0000
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0.00000000 8 Weeks Tray 2015 GaN Active 1 (Unlimited) RoHS Compliant 84V 440196 5.5GHz~5.8GHz 11dB 1.5A 115mA HEMT 28V 15W
C3M0075120J C3M0075120J Cree/Wolfspeed 10.8271
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0.00000000 16 Weeks Tube 2017 C3M™ Active 1 (Unlimited) 7 ROHS3 Compliant TO-263-8, D2Pak (7 Leads + Tab), TO-263CA not_compliant Surface Mount -55°C~150°C TJ SiCFET (Silicon Carbide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G7 1 SINGLE WITH BUILT-IN DIODE DRAIN 113.6W Tc SWITCHING 0.09Ohm 1200V N-Channel 90m Ω @ 20A, 15V 4V @ 5mA 1350pF @ 1000V 51nC @ 15V 30A 30A Tc 1200V 80A 15V +19V, -8V
PTFB201402FC-V1-R0 PTFB201402FC-V1-R0 Cree/Wolfspeed 0.0000
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0.00000000 Active 65V H-37248-4 2.01GHz~2.025GHz 16dB 10μA H-37248-4 650mA LDMOS (Dual), Common Source 28V 140W
GTVA263202FC-V1-R0 GTVA263202FC-V1-R0 Cree/Wolfspeed 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) GaN Active RoHS Compliant 125V H-37248-4 2.62GHz~2.69GHz 17dB H-37248-4 200mA HEMT 48V 340W
CGHV35060MP CGHV35060MP Cree/Wolfspeed 0.0000
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0.00000000 8 Weeks Tape & Reel (TR) 2016 GaN Active 3 (168 Hours) RoHS Compliant 150V 20-TSSOP (0.173, 4.40mm Width) Exposed Pad 2.7GHz~3.5GHz 14.5dB 20-TSSOP 125mA HEMT 50V 60W
PTVA035002EV-V1-R250 PTVA035002EV-V1-R250 Cree/Wolfspeed 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active RoHS Compliant 105V H-36275-4 390MHz~450MHz 18dB 10μA H-36275-4 500mA LDMOS (Dual), Common Source 50V 500W
PXAD214218FV-V1-R2 PXAD214218FV-V1-R2 Cree/Wolfspeed 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant 65V H-37275G-6/2 2.11GHz~2.17GHz 13.5dB 10μA H-37275G-6/2 720mA LDMOS 28V 290W
CGH40120F CGH40120F Cree/Wolfspeed 0.0000
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0.00000000 8 Weeks Tray 2015 GaN Active 1 (Unlimited) RoHS Compliant 84V 28A 440193 0Hz~4GHz CGH40* 19dB 1A HEMT 28V 120W
PXAC210552FC-V1-R0 PXAC210552FC-V1-R0 Cree/Wolfspeed 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant
C3D04060E-TR C3D04060E-TR Cree/Wolfspeed 2.3334
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0.00000000 7 Weeks Tape & Reel (TR) 2016 Z-Rec® Active 3 (168 Hours) RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount Silicon Carbide Schottky TO-252-2 Fast Recovery =< 500ns, > 200mA (Io) 50μA @ 600V 1.8V @ 4A -55°C~175°C 600V 13.5A DC 251pF @ 0V 1MHz
GTVA261802FC-V1-R0 GTVA261802FC-V1-R0 Cree/Wolfspeed 0.0000
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0.00000000 GaN Active 125V H-37248C-4 2.62GHz~2.69GHz 16.8dB H-37248C-4 160mA HEMT 48V 170W
C3D10065I C3D10065I Cree/Wolfspeed 5.5704
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0.00000000 6 Weeks Through Hole Tube 2013 Z-Rec® Active 1 (Unlimited) 175°C -55°C RoHS Compliant No 2 TO-220-2 Isolated Tab Unknown Through Hole 60W Silicon Carbide Schottky 10A 1.8V 80A Single 250μA TO-220-2 Isolated Tab No Recovery Time > 500mA (Io) 50μA @ 650V -55°C~175°C 650V 10A 650V 80A 80A 650V 19A DC 2.6 °C/W 0 s 480pF @ 0V 1MHz
GTRA362002FC-V1-R0 GTRA362002FC-V1-R0 Cree/Wolfspeed 0.0000
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0.00000000 GaN Active 125V H-37248C-4 3.4GHz~3.6GHz 13.5dB H-37248C-4 140mA HEMT 48V 200W
CG2H40120P CG2H40120P Cree/Wolfspeed 0.0000
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0.00000000 GaN Active 120V 440206 2.5GHz 20dB 440206 1A HEMT 28V 120W
PXAD184218FV-V1-R2 PXAD184218FV-V1-R2 Cree/Wolfspeed 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant 65V H-37275G-6/2 1.805GHz~1.88GHz 14dB 10μA H-37275G-6/2 720mA LDMOS 28V 130W
C3D03060F C3D03060F Cree/Wolfspeed 0.0000
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0.00000000 6 Weeks Through Hole Tube 2012 Z-Rec® Active 1 (Unlimited) 175°C -55°C 10.3mm RoHS Compliant Lead Free 2 TO-220-2 Full Pack, Isolated Tab Unknown 16.07mm 4.9mm Through Hole 12.5W Silicon Carbide Schottky 3A 1.7V 100A Single 50μA TO-220-F2 No Recovery Time > 500mA (Io) 50μA @ 600V 1.7V @ 3A -55°C~175°C 600V 3A 100μA 600V 100A 28A 600V 5A DC 0 s 155pF @ 0V 1MHz
PTFB241402FC-V1-R0 PTFB241402FC-V1-R0 Cree/Wolfspeed 0.0000
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0.00000000 Active
GTVA262711FA-V2-R0 GTVA262711FA-V2-R0 Cree/Wolfspeed 0.0000
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0.00000000 Tape & Reel (TR) GaN Active 125V H-87265J-2 2.62GHz~2.69GHz 18dB H-87265J-2 320mA HEMT 48V 70W
PXAE1837078NB-V1-R0 PXAE1837078NB-V1-R0 Cree/Wolfspeed 0.0000
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0.00000000 Tape & Reel (TR) Active
C3D16065A C3D16065A Cree/Wolfspeed 0.0000
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0.00000000 11 Weeks Tube 2016 Z-Rec® Active RoHS Compliant TO-220-2 Through Hole Silicon Carbide Schottky 39A TO-220-2 No Recovery Time > 500mA (Io) 95μA @ 650V 1.8V @ 16A -55°C~175°C 650V 39A DC 0ns 878pF @ 0V 1MHz
PTVA042502FC-V1-R0 PTVA042502FC-V1-R0 Cree/Wolfspeed 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant H-37248-4 H-37248-4
C3D04060A C3D04060A Cree/Wolfspeed 0.0000
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0.00000000 6 Weeks Through Hole Tube 2009 Z-Rec® Active 1 (Unlimited) 175°C -55°C 10.41mm RoHS Compliant No 2 TO-220-2 Unknown 15.621mm 4.699mm Through Hole 75W Silicon Carbide Schottky 4A 1.7V 110A Single 50μA TO-220-2 No Recovery Time > 500mA (Io) 50μA @ 600V 1.8V @ 4A -55°C~175°C 600V 4A 50μA 600V 110A 31.9A 600V 13.5A DC 0 s 251pF @ 0V 1MHz
PTFA041501F-V4-R0 PTFA041501F-V4-R0 Cree/Wolfspeed 0.0000
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0.00000000 download Strip Not For New Designs 1 (Unlimited) RoHS Compliant 65V 2-Flatpack, Fin Leads 420MHz~500MHz 21dB 1μA 900mA LDMOS 28V 150W
C3D04065A C3D04065A Cree/Wolfspeed 2.1722
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0.00000000 6 Weeks Through Hole Tube 2007 Z-Rec® Active 1 (Unlimited) 175°C -55°C RoHS Compliant 2 TO-220-2 Unknown Through Hole 75W Silicon Carbide Schottky 6A 1.8V 110A Single 60μA TO-220-2 No Recovery Time > 500mA (Io) 60μA @ 650V 1.8V @ 4A -55°C~175°C 650V 4A 650V 110A 31.9A 650V 13.5A DC 0 s 251pF @ 0V 1MHz
C3D16065D C3D16065D Cree/Wolfspeed 0.0000
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0.00000000 download 6 Weeks Tube 2014 Z-Rec® Active 1 (Unlimited) RoHS Compliant 3 TO-247-3 Through Hole Silicon Carbide Schottky TO-247-3 No Recovery Time > 500mA (Io) 60μA @ 650V 1.8V @ 8A -55°C~175°C 1 Pair Common Cathode 650V 8A DC 0ns
CRF24010PE CRF24010PE Cree/Wolfspeed 0.0000
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0.00000000 download Tube 2010 Obsolete 3 (168 Hours) RoHS Compliant 120V 1.8A 440196 1.95GHz 15dB 1.8A 440196 500mA Silicon Carbide MESFET 48V 3.1dB 12W
C2M0080120D C2M0080120D Cree/Wolfspeed 0.0000
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0.00000000 download 16 Weeks Through Hole Bulk 2013 C2M™ Active 1 (Unlimited) 150°C -55°C 16.13mm RoHS Compliant No 3 TO-247-3 Unknown 21.1mm 5.21mm Through Hole -55°C~150°C TJ SiCFET (Silicon Carbide) 1 Single 208W 12 ns 3.2V 80mOhm TO-247-3 192W Tc 31.6A 23.2 ns N-Channel 98mOhm @ 20A, 20V 4V @ 5mA 950pF @ 1000V 62nC @ 5V 25V 1.2kV 1.7 V 36A Tc 1200V 950pF 20V +25V, -10V 98 mΩ
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