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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Voltage - Rated Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Frequency Height Width Mounting Type Operating Temperature Technology Base Part Number Number of Channels Gain Max Power Dissipation Power - Max Number of Elements Diode Type Forward Current Forward Voltage Current Rating (Amps) Max Surge Current Element Configuration Power Dissipation Turn On Delay Time Max Reverse Leakage Current Threshold Voltage Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Natural Thermal Resistance Reverse Recovery Time Power Dissipation-Max Reverse Voltage Continuous Drain Current (ID) Capacitance @ Vr, F Max Junction Temperature (Tj) Turn-Off Delay Time FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Current - Test Transistor Type Voltage - Test Input Capacitance Power - Output Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
C2D05120E C2D05120E Cree/Wolfspeed 0.0000
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0.00000000 download 4 Weeks Surface Mount Tube 2009 Zero Recovery™ Obsolete 1 (Unlimited) 175°C -55°C 7.34mm RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Unknown 2.388mm 6.248mm Surface Mount 136W Silicon Carbide Schottky 5A 1.8V 100A Single 200μA TO-252-2 No Recovery Time > 500mA (Io) 200μA @ 1200V 1.8V @ 5A -55°C~175°C 1.2kV 10A 200μA 1.2kV 100A 1200V 17.5A DC 0 s 455pF @ 0V 1MHz
C3D03065E C3D03065E Cree/Wolfspeed 1.9092
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0.00000000 6 Weeks Tube 2014 Z-Rec® Active RoHS Compliant 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount Silicon Carbide Schottky No Recovery Time > 500mA (Io) 50μA @ 650V 1.8V @ 3A -55°C~175°C 650V 11A DC 0ns 155pF @ 0V 1MHz
PXFE181507FC-V1-R2 PXFE181507FC-V1-R2 Cree/Wolfspeed 0.0000
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0.00000000 Active 65V H-37248G-4/2 1.805GHz~1.88GHz 20dB 10μA H-37248G-4/2 900mA LDMOS 28V 175W
PTRA094252FC-V1-R2 PTRA094252FC-V1-R2 Cree/Wolfspeed 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant 105V H-37248-4 746MHz~960MHz 23dB 10μA H-37248-4 LDMOS (Dual), Common Source 351.5W
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0.00000000 download Tape & Reel (TR) Not For New Designs 1 (Unlimited) RoHS Compliant 65V H-37248-4 2.4GHz 17dB 120mA LDMOS (Dual) 30V 110W
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0.00000000 download 13 Weeks Tube Automotive, AEC-Q101, E Active 1 (Unlimited) RoHS Compliant TO-247-3 Through Hole -55°C~150°C TJ SiCFET (Silicon Carbide) TO-247-3 54W Tc N-Channel 360mOhm @ 7.5A, 15V 3.5V @ 1.2mA 150pF @ 600V 9.5nC @ 15V 11.5A Tc 900V 15V +18V, -8V
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0.00000000 7 Weeks Tape & Reel (TR) 2016 Z-Rec® Active 3 (168 Hours) RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount Silicon Carbide Schottky TO-252-2 Fast Recovery =< 500ns, > 200mA (Io) 50μA @ 600V 1.8V @ 4A -55°C~175°C 600V 13.5A DC 251pF @ 0V 1MHz
CGHV37400F CGHV37400F Cree/Wolfspeed 0.0000
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0.00000000 8 Weeks GaN Active 1 (Unlimited) RoHS Compliant 125V 440217 3.3GHz~3.8GHz 14dB 440217 1A HEMT 50V 525W
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0.00000000 Tray Discontinued 3 (168 Hours) RoHS Compliant 65V H-37275-4 2.4GHz 15dB H-37275-4 850mA LDMOS 28V 68W
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0.00000000 8 Weeks Tray GaN Active 1 (Unlimited) RoHS Compliant 125V 8.7A 440193 0Hz~3GHz 11dB 600mA HEMT 50V 116W
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0.00000000 16 Weeks Tube C3M™ Active Not Applicable Non-RoHS Compliant TO-247-4 Through Hole -55°C~150°C TJ SiCFET (Silicon Carbide) 30mOhm TO-247-4 149W Tc N-Channel 39mOhm @ 35A, 15V 3.5V @ 11mA 1864pF @ 600V 87nC @ 15V 63A Tc 900V 15V +15V, -4V
CPW2-1200-S010B-SK CPW2-1200-S010B-SK Cree/Wolfspeed 0.0000
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0.00000000 Obsolete 1 (Unlimited)
C3D04065A C3D04065A Cree/Wolfspeed 2.1722
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0.00000000 6 Weeks Through Hole Tube 2007 Z-Rec® Active 1 (Unlimited) 175°C -55°C RoHS Compliant 2 TO-220-2 Unknown Through Hole 75W Silicon Carbide Schottky 6A 1.8V 110A Single 60μA TO-220-2 No Recovery Time > 500mA (Io) 60μA @ 650V 1.8V @ 4A -55°C~175°C 650V 4A 650V 110A 31.9A 650V 13.5A DC 0 s 251pF @ 0V 1MHz
CGH40006S CGH40006S Cree/Wolfspeed 0.0000
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0.00000000 download 8 Weeks Tape & Reel (TR) 2015 GaN Active 3 (168 Hours) RoHS Compliant 84V 6-VDFN Exposed Pad 0Hz~6GHz CGH40* 12dB 6-QFN-EP (3x3) 100mA HEMT 28V 8W
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0.00000000 Active 65V H-37248-4 2.01GHz~2.025GHz 16dB 10μA H-37248-4 650mA LDMOS (Dual), Common Source 28V 140W
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0.00000000 GaN Active 125V H-37248C-4 3.4GHz~3.6GHz 13.5dB H-37248C-4 140mA HEMT 48V 200W
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0.00000000 12 Weeks Tape & Reel (TR) Active RoHS Compliant 105V HBSOF-6-2 790MHz~820MHz 15.5dB 10μA PG-HBSOF-6-2 200mA LDMOS (Dual), Common Source 48V 280W
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0.00000000 12 Weeks Tape & Reel (TR) Active 3 (168 Hours) RoHS Compliant 105V HBSOF-6-2 925MHz~960MHz 18dB 10μA PG-HBSOF-6-2 200mA LDMOS 48V 250W
PXAD214218FV-V1-R2 PXAD214218FV-V1-R2 Cree/Wolfspeed 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant 65V H-37275G-6/2 2.11GHz~2.17GHz 13.5dB 10μA H-37275G-6/2 720mA LDMOS 28V 290W
PXAC192908FV-V1 PXAC192908FV-V1 Cree/Wolfspeed 0.0000
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0.00000000 12 Weeks Active 1 (Unlimited) RoHS Compliant
PXAC241702FC-V1 PXAC241702FC-V1 Cree/Wolfspeed 0.0000
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0.00000000 Tray Discontinued 3 (168 Hours) RoHS Compliant 65V H-37248-4 2.4GHz 16.5dB H-37248-4 360mA LDMOS 28V 28W
CPW2-1200-S005B-FR1 CPW2-1200-S005B-FR1 Cree/Wolfspeed 0.0000
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0.00000000 Tape & Reel (TR) Obsolete 1 (Unlimited)
C3D10065E C3D10065E Cree/Wolfspeed 0.0000
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0.00000000 download 6 Weeks Tube 2014 Z-Rec® Active 1 (Unlimited) RoHS Compliant 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount Silicon Carbide Schottky TO-252-2 No Recovery Time > 500mA (Io) 50μA @ 650V 1.8V @ 10A -55°C~175°C 650V 32A DC 0ns 460.5pF @ 0V 1MHz
C2M0045170D C2M0045170D Cree/Wolfspeed 82.1831
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0.00000000 16 Weeks Tube 2014 C2M™ Active Not Applicable 150°C RoHS Compliant 3 TO-247-3 No SVHC Through Hole -40°C~150°C TJ SiCFET (Silicon Carbide) 2.6V 45mOhm TO-247-3 520W Tc 72A N-Channel 70mOhm @ 50A, 20V 4V @ 18mA 3672pF @ 1kV 188nC @ 20V 72A Tc 1700V 20V +25V, -10V
C3D10065I C3D10065I Cree/Wolfspeed 5.5704
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0.00000000 6 Weeks Through Hole Tube 2013 Z-Rec® Active 1 (Unlimited) 175°C -55°C RoHS Compliant No 2 TO-220-2 Isolated Tab Unknown Through Hole 60W Silicon Carbide Schottky 10A 1.8V 80A Single 250μA TO-220-2 Isolated Tab No Recovery Time > 500mA (Io) 50μA @ 650V -55°C~175°C 650V 10A 650V 80A 80A 650V 19A DC 2.6 °C/W 0 s 480pF @ 0V 1MHz
C3D02060F C3D02060F Cree/Wolfspeed 1.3727
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0.00000000 6 Weeks Through Hole Tube 2012 Z-Rec® Active 1 (Unlimited) 175°C -55°C 10.3mm RoHS Compliant Lead Free No 2 TO-220-2 Full Pack, Isolated Tab Unknown 16.07mm 4.9mm Through Hole 10.8W Silicon Carbide Schottky 2A 1.7V 65A Single 50μA TO-220-F2 No Recovery Time > 500mA (Io) 50μA @ 600V 1.7V @ 2A -55°C~175°C 600V 4A 100μA 600V 65A 20A 600V 4A DC 0 s 120pF @ 0V 1MHz
C6D06065A C6D06065A Cree/Wolfspeed 3.3824
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0.00000000 4 Weeks Z-Rec® Active 1 (Unlimited) RoHS Compliant TO-220-2 Through Hole Silicon Carbide Schottky TO-220-2 No Recovery Time > 500mA (Io) 30μA @ 650V 1.5V @ 6A -55°C~175°C 650V 24A DC 0ns 394pF @ 0V 1MHz
C2D05120E-TR C2D05120E-TR Cree/Wolfspeed 0.0000
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0.00000000 download 5 Weeks Tape & Reel (TR) 2006 Zero Recovery™ Obsolete 3 (168 Hours) Non-RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount Silicon Carbide Schottky TO-252-2 No Recovery Time > 500mA (Io) 200μA @ 1200V 1.8V @ 5A -55°C~175°C 1200V 17.5A DC 0ns 455pF @ 0V 1MHz
C3D10065A C3D10065A Cree/Wolfspeed 0.0000
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0.00000000 6 Weeks Through Hole Tube 2010 Z-Rec® Active 1 (Unlimited) 175°C -55°C RoHS Compliant 2 TO-220-2 Unknown Through Hole 136.3W Silicon Carbide Schottky 10A 1.8V 250A Single 60μA TO-220-2 No Recovery Time > 500mA (Io) 60μA @ 650V 1.8V @ 10A -55°C~175°C 650V 10A 650V 250A 90A 650V 30A DC 0 s 480pF @ 0V 1MHz
CCS050M12CM2 CCS050M12CM2 Cree/Wolfspeed 0.0000
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0.00000000 19 Weeks Chassis Mount, Screw Bulk 2013 Z-FET™ Z-Rec™ Active 1 (Unlimited) 150°C -40°C RoHS Compliant No 28 Module Unknown 17.5mm Chassis Mount 150°C TJ 6 337W 337W 6 312W 21 ns 2.3V 25mOhm Module 1.2kV 87A 150°C 50 ns 6 N-Channel (3-Phase Bridge) 34mOhm @ 50A, 20V 2.3V @ 2.5mA 2.810nF @ 800V 180nC @ 20V 19ns 30 ns 25V 1.2kV Silicon Carbide (SiC) 87A Tc 1200V 1.2kV 2.81nF 34 mΩ
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