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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Voltage - Rated Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Reach Compliance Code Frequency Height Width Mounting Type Operating Temperature Voltage - Rated DC Technology Capacitance HTS Code Operating Temperature (Max) Subcategory Gain Max Power Dissipation Power - Max Number of Elements Configuration Diode Type Output Current Polarity Forward Current Forward Voltage Current Rating (Amps) Max Surge Current Element Configuration Max Reverse Leakage Current Threshold Voltage Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Natural Thermal Resistance Reverse Recovery Time Power Dissipation-Max Continuous Drain Current (ID) Capacitance @ Vr, F FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs FET Feature Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Current - Test Transistor Type Voltage - Test Power - Output Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
C2M0045170D C2M0045170D Cree/Wolfspeed 82.1831
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0.00000000 16 Weeks Tube 2014 C2M™ Active Not Applicable 150°C RoHS Compliant 3 TO-247-3 No SVHC Through Hole -40°C~150°C TJ SiCFET (Silicon Carbide) 2.6V 45mOhm TO-247-3 520W Tc 72A N-Channel 70mOhm @ 50A, 20V 4V @ 18mA 3672pF @ 1kV 188nC @ 20V 72A Tc 1700V 20V +25V, -10V
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0.00000000 6 Weeks Through Hole Tube 2013 Z-Rec® Active 1 (Unlimited) 175°C -55°C RoHS Compliant No 2 TO-220-2 Isolated Tab Unknown Through Hole 60W Silicon Carbide Schottky 10A 1.8V 80A Single 250μA TO-220-2 Isolated Tab No Recovery Time > 500mA (Io) 50μA @ 650V -55°C~175°C 650V 10A 650V 80A 80A 650V 19A DC 2.6 °C/W 0 s 480pF @ 0V 1MHz
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0.00000000 6 Weeks Through Hole Tube 2012 Z-Rec® Active 1 (Unlimited) 175°C -55°C 10.3mm RoHS Compliant Lead Free No 2 TO-220-2 Full Pack, Isolated Tab Unknown 16.07mm 4.9mm Through Hole 10.8W Silicon Carbide Schottky 2A 1.7V 65A Single 50μA TO-220-F2 No Recovery Time > 500mA (Io) 50μA @ 600V 1.7V @ 2A -55°C~175°C 600V 4A 100μA 600V 65A 20A 600V 4A DC 0 s 120pF @ 0V 1MHz
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0.00000000 4 Weeks Z-Rec® Active 1 (Unlimited) RoHS Compliant TO-220-2 Through Hole Silicon Carbide Schottky TO-220-2 No Recovery Time > 500mA (Io) 30μA @ 650V 1.5V @ 6A -55°C~175°C 650V 24A DC 0ns 394pF @ 0V 1MHz
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0.00000000 download 5 Weeks Tape & Reel (TR) 2006 Zero Recovery™ Obsolete 3 (168 Hours) Non-RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount Silicon Carbide Schottky TO-252-2 No Recovery Time > 500mA (Io) 200μA @ 1200V 1.8V @ 5A -55°C~175°C 1200V 17.5A DC 0ns 455pF @ 0V 1MHz
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0.00000000 6 Weeks Through Hole Tube 2010 Z-Rec® Active 1 (Unlimited) 175°C -55°C RoHS Compliant 2 TO-220-2 Unknown Through Hole 136.3W Silicon Carbide Schottky 10A 1.8V 250A Single 60μA TO-220-2 No Recovery Time > 500mA (Io) 60μA @ 650V 1.8V @ 10A -55°C~175°C 650V 10A 650V 250A 90A 650V 30A DC 0 s 480pF @ 0V 1MHz
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0.00000000 26 Weeks Tape & Reel (TR) 2015 C3M™ Active 3 (168 Hours) RoHS Compliant TO-263-8, D2Pak (7 Leads + Tab), TO-263CA Surface Mount -55°C~150°C TJ SiCFET (Silicon Carbide) D2PAK-7 50W Tc N-Channel 360mOhm @ 7.5A, 15V 3.5V @ 1.2mA 150pF @ 600V 9.5nC @ 15V 11A Tc 900V 15V +18V, -8V
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0.00000000 Tape & Reel (TR) Not For New Designs 1 (Unlimited) RoHS Compliant
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant
C3M0280090D C3M0280090D Cree/Wolfspeed 6.1795
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0.00000000 16 Weeks Tube 2005 C3M™ Active 1 (Unlimited) 150°C RoHS Compliant 3 TO-247-3 No SVHC Through Hole -55°C~150°C TJ SiCFET (Silicon Carbide) 2.1V 280mOhm TO-247-3 54W Tc 11.5A N-Channel 360mOhm @ 7.5A, 15V 3.5V @ 1.2mA 150pF @ 600V 9.5nC @ 15V 11.5A Tc 900V 15V +18V, -8V
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0.00000000 download 13 Weeks Tube Automotive, AEC-Q101, E Active 1 (Unlimited) RoHS Compliant TO-247-3 Through Hole -55°C~150°C TJ SiCFET (Silicon Carbide) TO-247-3 97W Tc N-Channel 155mOhm @ 15A, 15V 3.5V @ 3mA 350pF @ 600V 17.3nC @ 15V 23A Tc 900V 15V +18V, -8V
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0.00000000 16 Weeks Tube C2M™ Active Not Applicable TO-247-4 Through Hole -40°C~150°C TJ SiCFET (Silicon Carbide) TO-247-4 520W Tc N-Channel 59mOhm @ 50A, 20V 4V @ 18mA 3672pF @ 1000V 188nC @ 20V 72A Tc 1700V 20V +25V, -10V
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0.00000000 C3M™ Active 1 (Unlimited) ROHS3 Compliant TO-247-4 Through Hole -40°C~175°C TJ SiCFET (Silicon Carbide) TO-247-4L 283W Tc N-Channel 43mOhm @ 40A, 15V 3.6V @ 11.5mA 3357pF @ 1000V 118nC @ 15V 63A Tc 1200V 15V +15V, -4V
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0.00000000 16 Weeks Tube 2017 C3M™ Active 1 (Unlimited) RoHS Compliant TO-263-8, D2Pak (7 Leads + Tab), TO-263CA Surface Mount -55°C~150°C TJ SiCFET (Silicon Carbide) 120mOhm D2PAK-7 83W Tc N-Channel 155mOhm @ 15A, 15V 3.5V @ 3mA 350pF @ 600V 21.5nC @ 15V 22A Tc 1000V 15V +15V, -4V
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0.00000000 Active 3 (168 Hours) 65V 14-PowerSMD Module 1.805GHz~2.2GHz 27dB 1μA PG-HB1DSO-14-1 150mA LDMOS (Dual) 28V 20W 40W
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0.00000000 Tape & Reel (TR) Not For New Designs 1 (Unlimited) RoHS Compliant 65V H-33288-6 1.88GHz 19dB 1.85A LDMOS 30V 50W
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0.00000000 download Bulk Z-FET™ Obsolete 1 (Unlimited) Die Surface Mount -55°C~150°C TJ SiCFET (Silicon Carbide) 202W Tj N-Channel 220m Ω @ 10A, 20V 4V @ 1mA 928pF @ 800V 47.1nC @ 20V 28A Tj 1200V 20V +25V, -5V
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0.00000000 14 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant
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0.00000000 Z-Rec® Active 1 (Unlimited) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount Silicon Carbide Schottky No Recovery Time > 500mA (Io) 50μA @ 650V 1.8V @ 8A -55°C~175°C 650V 25.5A DC 0ns 395pF @ 0V 1MHz
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0.00000000 6 Weeks Surface Mount Tube 2012 Z-Rec® Active 175°C -55°C RoHS Compliant 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Unknown Surface Mount 136W Silicon Carbide Schottky 24.5A 1.8V 64A Single 35μA TO-252-2 No Recovery Time > 500mA (Io) 250μA @ 1200V 3V @ 2A -55°C~175°C 1.2kV 8A 1.2kV 64A 64A 1200V 24.5A DC 0 s 560pF @ 0V 1MHz
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0.00000000 13 Weeks Tube Automotive, AEC-Q101, E Active Not Applicable TO-220-2 Through Hole Silicon Carbide Schottky TO-220-2 No Recovery Time > 500mA (Io) 200μA @ 1200V 1.8V @ 20A -55°C~175°C 1200V 54.5A DC 0ns 1500pF @ 0V 1MHz
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0.00000000 11 Weeks Tube Z-Rec® Active 1 (Unlimited) TO-247-2 Through Hole Silicon Carbide Schottky TO-247-2 No Recovery Time > 500mA (Io) 200μA @ 1200V 1.8V @ 20A -55°C~175°C 1200V 54A DC 0ns 1.5nF @ 0V 1MHz
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0.00000000 19 Weeks Bulk 2016 Z-REC™ Active Not Applicable RoHS Compliant Module 175°C TJ 3000W 3.7mOhm Module 2 N-Channel (Half Bridge) 4.3mOhm @ 400A, 20V 4V @ 105mA 1127nC @ 20V Silicon Carbide (SiC) 444A Tc 1200V 1.2kV
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0.00000000 GaN Active 150V 440206 4GHz 19dB 440206 300mA HEMT 50V 50W
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0.00000000 download Surface Mount Tube 2009 Zero Recovery™ yes Obsolete 1 (Unlimited) EAR99 RoHS Compliant Lead Free 2A TO-263-3, D2Pak (2 Leads + Tab), TO-263AB unknown Surface Mount 600V 120pF 8541.10.00.80 175°C Rectifier Diodes 1 SINGLE Silicon Carbide Schottky 3.5A Standard No Recovery Time > 500mA (Io) 200μA @ 600V 1.8V @ 2A -55°C~175°C 600V 3.5A 0ns 120pF @ 0V 1MHz
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