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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Max Operating Temperature Min Operating Temperature Length RoHS Status Voltage - Rated Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Frequency Height Width Mounting Type Operating Temperature Technology Base Part Number Gain Max Power Dissipation Diode Type Forward Current Forward Voltage Current Rating (Amps) Max Surge Current Element Configuration Max Reverse Leakage Current Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Capacitance @ Vr, F FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Current - Test Transistor Type Voltage - Test Power - Output Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
GTRA263902FC-V2-R0 GTRA263902FC-V2-R0 Cree/Wolfspeed 0.0000
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0.00000000 GaN Active 125V H-37248C-4 2.495GHz~2.69GHz 13.8dB H-37248C-4 280mA HEMT 48V 370W
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0.00000000 14 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant
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0.00000000 Tray Discontinued 1 (Unlimited) RoHS Compliant 65V H-37248-4 2.69GHz 20dB H-37248-4 170mA LDMOS (Dual) 28V 5W
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0.00000000 C3M™ Active 1 (Unlimited) ROHS3 Compliant TO-247-3 Through Hole -40°C~175°C TJ SiCFET (Silicon Carbide) TO-247-3 283W Tc N-Channel 43mOhm @ 40A, 15V 3.6V @ 11.5mA 3357pF @ 1000V 114nC @ 15V 63A Tc 1200V 15V +15V, -4V
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0.00000000 6 Weeks Through Hole Tube 2009 Z-Rec® Active 1 (Unlimited) 175°C -55°C 10.41mm RoHS Compliant No 2 TO-220-2 Unknown 15.621mm 4.699mm Through Hole 100W Silicon Carbide Schottky 8A 1.8V 220A Single 50μA No Recovery Time > 500mA (Io) 50μA @ 600V 1.8V @ 8A -55°C~175°C 600V 8A 50μA 600V 220A 80A 24A DC 0ns 441pF @ 0V 1MHz
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0.00000000 8 Weeks Tray 2017 GaN Active 1 (Unlimited) RoHS Compliant 125V 24A 440210 2.9GHz~3.5GHz 11dB 500mA HEMT 45V 455W
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