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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Voltage - Rated Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Reach Compliance Code Frequency Height Width Mounting Type Operating Temperature Voltage - Rated DC Technology Capacitance HTS Code Base Part Number Operating Temperature (Max) Subcategory Gain Max Power Dissipation Power - Max Number of Elements Configuration Diode Type Output Current Polarity Forward Current Forward Voltage Current Rating (Amps) Max Surge Current Element Configuration Power Dissipation Max Reverse Leakage Current Threshold Voltage Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Reverse Voltage Continuous Drain Current (ID) Capacitance @ Vr, F Max Junction Temperature (Tj) FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Gate to Source Voltage (Vgs) FET Feature Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Current - Test Transistor Type Voltage - Test Power - Output Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
C3D10170H C3D10170H Cree/Wolfspeed 10.6041
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0.00000000 6 Weeks Through Hole Tube 2007 Z-Rec® Not For New Designs 1 (Unlimited) 175°C -55°C RoHS Compliant No 2 TO-247-2 Unknown 25.93mm Through Hole 231W Silicon Carbide Schottky 14.4A 2V 55A Single 60μA TO-247-2 No Recovery Time > 500mA (Io) 60μA @ 1700V 2V @ 10A -55°C~175°C 1.7kV 14.4A 20μA 1.7kV 55A 55A 1700V 14.4A DC 0ns 1.7kV 827pF @ 0V 1MHz 175°C
PXAC182002FC-V1-R250 PXAC182002FC-V1-R250 Cree/Wolfspeed 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 3 (168 Hours) RoHS Compliant
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0.00000000 download Strip Not For New Designs 1 (Unlimited) RoHS Compliant 65V 2-Flatpack, Fin Leads, Flanged 920MHz~960MHz 19dB 10μA 750mA LDMOS 28V 120W
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0.00000000 Active 1 (Unlimited) RoHS Compliant TO-220-2 Through Hole Silicon Carbide Schottky TO-220-2 No Recovery Time > 500mA (Io) 1.27V @ 4A 650V 4A DC 0ns
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0.00000000 6 Weeks Through Hole Tube 2011 Z-Rec® Active 1 (Unlimited) 175°C -55°C 10.41mm RoHS Compliant No 2 TO-220-2 Unknown 19.431mm 4.699mm Through Hole 460.5pF 136.3W Silicon Carbide Schottky 10A 1.8V 250A Single 50μA TO-220-2 No Recovery Time > 500mA (Io) 50μA @ 600V 1.8V @ 10A -55°C~175°C 600V 10A 10μA 600V 250A 90A 600V 30A DC 0 s 480pF @ 0V 1MHz 175°C
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant
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0.00000000 Tape & Reel (TR) Obsolete 1 (Unlimited) 65V H-33288-6 2.17GHz 18dB 1.2A LDMOS 30V 32W
CSD02060G CSD02060G Cree/Wolfspeed 0.0000
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0.00000000 download Surface Mount Tube 2009 Zero Recovery™ yes Obsolete 1 (Unlimited) EAR99 RoHS Compliant Lead Free 2A TO-263-3, D2Pak (2 Leads + Tab), TO-263AB unknown Surface Mount 600V 120pF 8541.10.00.80 175°C Rectifier Diodes 1 SINGLE Silicon Carbide Schottky 3.5A Standard No Recovery Time > 500mA (Io) 200μA @ 600V 1.8V @ 2A -55°C~175°C 600V 3.5A 0ns 120pF @ 0V 1MHz
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0.00000000 14 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant
C3M0032120D C3M0032120D Cree/Wolfspeed 29.6517
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0.00000000 C3M™ Active 1 (Unlimited) ROHS3 Compliant TO-247-3 Through Hole -40°C~175°C TJ SiCFET (Silicon Carbide) TO-247-3 283W Tc N-Channel 43mOhm @ 40A, 15V 3.6V @ 11.5mA 3357pF @ 1000V 114nC @ 15V 63A Tc 1200V 15V +15V, -4V
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0.00000000 Tape & Reel (TR) Not For New Designs 3 (168 Hours) RoHS Compliant
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0.00000000 12 Weeks Tape & Reel (TR) Active 3 (168 Hours) RoHS Compliant 65V H-37248-4 2.02GHz 17.7dB H-37248-4 360mA LDMOS 28V 22.5W
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0.00000000 16 Weeks Tube C2M™ Active Not Applicable TO-247-4 Through Hole -40°C~150°C TJ SiCFET (Silicon Carbide) TO-247-4 520W Tc N-Channel 59mOhm @ 50A, 20V 4V @ 18mA 3672pF @ 1000V 188nC @ 20V 72A Tc 1700V 20V +25V, -10V
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0.00000000 GaN Active 125V H-37248C-4 2.495GHz~2.69GHz 13.8dB H-37248C-4 280mA HEMT 48V 370W
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0.00000000 6 Weeks Through Hole Tube 2009 Zero Recovery™ Active 1 (Unlimited) 175°C -55°C RoHS Compliant Lead Free 1A No 2 TO-220-2 Unknown Through Hole 600V 80pF CSD01060 21.4W Silicon Carbide Schottky 2.2A Standard 2A 1.8V 32A Single 100μA No Recovery Time > 500mA (Io) 100μA @ 600V 1.8V @ 1A -55°C~175°C 600V 2.2A 600V 9A 4A DC 0 s 80pF @ 0V 1MHz
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0.00000000 download 8 Weeks 2017 GaN Active Not Applicable HEMT 28V 75W
C3M0120090D C3M0120090D Cree/Wolfspeed 9.8734
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0.00000000 16 Weeks Tube 2005 C3M™ Active 1 (Unlimited) 150°C RoHS Compliant 3 TO-247-3 No SVHC Through Hole -55°C~150°C TJ SiCFET (Silicon Carbide) 2.1V 120mOhm TO-247-3 97W Tc 23A N-Channel 155mOhm @ 15A, 15V 3.5V @ 3mA 350pF @ 600V 17.3nC @ 15V 23A Tc 900V 15V +18V, -8V
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0.00000000 12 Weeks Tray 2016 GaN Not For New Designs 1 (Unlimited) RoHS Compliant 84V 14A 440193 0Hz~4GHz CGH40* 14dB 14A 440193 400mA HEMT 28V 55W
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0.00000000 19 Weeks Screw Bulk 2014 Z-FET™ Active 1 (Unlimited) 150°C -40°C RoHS Compliant 7 Module, Screw Terminals No SVHC Chassis Mount 150°C TJ 1.66kW 1660W 2 1.66kW 2.3V 5mOhm Module 300A 2 N-Channel (Half Bridge) 5.7mOhm @ 300A, 20V 2.3V @ 15mA (Typ) 11700pF @ 600V 1025nC @ 20V 25V Silicon Carbide (SiC) 423A Tc 1200V 1.2kV
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