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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Height Width Mounting Type Operating Temperature Voltage - Rated DC Capacitance Max Power Dissipation Power - Max Number of Elements Diode Type Output Current Polarity Forward Current Forward Voltage Max Surge Current Element Configuration Power Dissipation Max Reverse Leakage Current Threshold Voltage Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Continuous Drain Current (ID) Capacitance @ Vr, F FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Gate to Source Voltage (Vgs) FET Feature Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss)
CAS300M12BM2 CAS300M12BM2 Cree/Wolfspeed 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 19 Weeks Screw Bulk 2014 Z-FET™ Active 1 (Unlimited) 150°C -40°C RoHS Compliant 7 Module, Screw Terminals No SVHC Chassis Mount 150°C TJ 1.66kW 1660W 2 1.66kW 2.3V 5mOhm Module 300A 2 N-Channel (Half Bridge) 5.7mOhm @ 300A, 20V 2.3V @ 15mA (Typ) 11700pF @ 600V 1025nC @ 20V 25V Silicon Carbide (SiC) 423A Tc 1200V 1.2kV
C2D05120A C2D05120A Cree/Wolfspeed 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 4 Weeks Through Hole Tube 2011 Zero Recovery™ Obsolete 1 (Unlimited) 175°C -55°C 10.41mm RoHS Compliant Lead Free 5A No 2 TO-220-2 Unknown 15.621mm 4.699mm Through Hole 1.2kV 28pF 136W Silicon Carbide Schottky 5A Standard 5A 3V 100A Single 200μA TO-220-2 No Recovery Time > 500mA (Io) 200μA @ 1200V 1.8V @ 5A -55°C~175°C 1.2kV 10A 1mA 1.2kV 100A 100A 1200V 17.5A DC 0 s 455pF @ 0V 1MHz
C5D10170H C5D10170H Cree/Wolfspeed 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 11 Weeks Z-Rec® Active Not Applicable TO-247-2 Through Hole Silicon Carbide Schottky TO-247-2 No Recovery Time > 500mA (Io) 200μA @ 1700V 1.8V @ 10A -55°C~175°C 1700V 33A DC 0ns 830pF @ 0V 1MHz
  • CAS300M12BM2
    CAS300M12BM2 Cree/Wolfspeed

    MOSFET 2N-CH 1200V 404A MODULE

    Price: 0.0000

    RFQ
  • C2D05120A
    C2D05120A Cree/Wolfspeed

    Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 1.8V @ 5A -55°C~175°C 200μA @ 1200V Tube TO-220-2 Through Hole

    Price: 0.0000

    RFQ
  • C5D10170H
    C5D10170H Cree/Wolfspeed

    Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 1.8V @ 10A -55°C~175°C 200μA @ 1700V TO-247-2 Through Hole

    Price: 0.0000

    RFQ
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