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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Voltage - Rated Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Reach Compliance Code Frequency Height Width Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Capacitance HTS Code Evaluation Kit JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Number of Channels Subcategory Qualification Status Gain Max Power Dissipation Power - Max Reference Standard Number of Elements Configuration Diode Type Application Number of Phases JEDEC-95 Code Non-rep Pk Forward Current-Max Output Current Polarity Forward Current Forward Voltage Case Connection Current Rating (Amps) Max Surge Current Element Configuration Power Dissipation Turn On Delay Time Max Reverse Leakage Current Threshold Voltage Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Diode Configuration Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Continuous Drain Current (ID) Capacitance @ Vr, F Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Current - Test Transistor Type Voltage - Test Input Capacitance Power - Output Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
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0.00000000 download 6 Weeks Through Hole Tube 2013 Z-Rec® Active 1 (Unlimited) Through Hole 175°C -55°C RoHS Compliant 2 TO-220-2 Isolated Tab Unknown Through Hole 6.000006g 48W Silicon Carbide Schottky 8A 1.8V Single No Recovery Time > 500mA (Io) 60μA @ 650V 1.8V @ 8A -55°C~175°C 650V 8A 60μA 650V 69A 16.5A DC 0ns 441pF @ 0V 1MHz
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0.00000000 download 6 Weeks Through Hole Tube 2014 Z-Rec® Active 1 (Unlimited) 175°C -55°C 10.41mm RoHS Compliant No 2 TO-220-2 Unknown 15.621mm 4.699mm Through Hole 242W Silicon Carbide Schottky 27A 1.8V 130A Single 200μA TO-220-2 No Recovery Time > 500mA (Io) 200μA @ 1200V 1.8V @ 20A -55°C~175°C 1.2kV 20A 200μA 1.2kV 130A 130A 1200V 54.5A DC 0 s 1500pF @ 0V 1MHz
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0.00000000 6 Weeks Surface Mount Tube 2012 Z-Rec® Active 175°C -55°C 7.34mm RoHS Compliant No 2 TO-252-3, DPak (2 Leads + Tab), SC-63 Unknown 2.388mm 6.248mm Surface Mount 81W Silicon Carbide Schottky 8.2A 1.8V 42A Single 150μA No Recovery Time > 500mA (Io) 150μA @ 1200V 1.8V @ 5A -55°C~175°C 1.2kV 8.2A 300μA 1.2kV 42A 46A 1200V 19A DC 0ns 390pF @ 0V 1MHz
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0.00000000 6 Weeks Surface Mount Tube 2009 Z-Rec® Active 175°C -55°C 11.05mm RoHS Compliant No 2 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Unknown 4.572mm 10.312mm Surface Mount 79W Silicon Carbide Schottky 6A 1.8V 200A Single 50μA TO-263-2 No Recovery Time > 500mA (Io) 50μA @ 600V 1.7V @ 6A -55°C~175°C 600V 6A 50μA 600V 70A 70A 600V 19A DC 0 s 295pF @ 0V 1MHz
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0.00000000 download Surface Mount Tube 2009 Zero Recovery™ Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant Lead Free 6A TO-263-3, D2Pak (2 Leads + Tab), TO-263AB unknown Surface Mount 600V 340pF 8541.10.00.80 SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 175°C Rectifier Diodes Not Qualified 1 SINGLE Silicon Carbide Schottky EFFICIENCY 1 TO-252 6A Standard CATHODE No Recovery Time > 500mA (Io) 200μA @ 600V 1.8V @ 6A -55°C~175°C 600V 10A 0 s 340pF @ 0V 1MHz
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