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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Voltage - Rated Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Reach Compliance Code Frequency Height Width Mounting Type Operating Temperature Voltage - Rated DC Technology Capacitance Gain Max Power Dissipation Diode Type Output Current Polarity Forward Current Forward Voltage Current Rating (Amps) Max Surge Current Element Configuration Max Reverse Leakage Current Threshold Voltage Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Diode Configuration Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Continuous Drain Current (ID) Capacitance @ Vr, F FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Current - Test Transistor Type Voltage - Test Power - Output Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
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0.00000000 26 Weeks Tape & Reel (TR) 2016 Z-Rec® Active 3 (168 Hours) RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount Schottky Fast Recovery =< 500ns, > 200mA (Io) 50μA @ 650V 1.8V @ 3A -55°C~175°C 650V 11A DC 155pF @ 0V 1MHz
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0.00000000 7 Weeks Tape & Reel (TR) 2012 Z-Rec® Active 3 (168 Hours) RoHS Compliant 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount Schottky Fast Recovery =< 500ns, > 200mA (Io) 50μA @ 600V 1.8V @ 10A -55°C~175°C 600V 29A DC 480pF @ 0V 1MHz
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0.00000000 23 Weeks Tape & Reel (TR) 2015 C2M™ Active 1 (Unlimited) RoHS Compliant TO-263-8, D2Pak (7 Leads + Tab), TO-263CA Surface Mount -55°C~150°C TJ SiCFET (Silicon Carbide) D2PAK-7 78W Tc N-Channel 1.4Ohm @ 2A, 20V 3.1V @ 500μA (Typ) 200pF @ 1000V 13nC @ 20V 5.3A Tc 1700V 20V +25V, -10V
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