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Discrete Semiconductors

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Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Diameter Length RoHS Status Contact Plating Radiation Hardening Number of Pins Additional Feature Package / Case Height Width Mfr Mounting Type Weight Operating Temperature Technology Operating Mode Current Type JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Frequency Range JESD-30 Code Number of Channels Subcategory Voltage Number of Elements Configuration Diode Type Case Connection Element Configuration Power Dissipation Turn On Delay Time Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Feedback Cap-Max (Crss) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Current - Max Voltage - Isolation Voltage - Peak Reverse (Max) Resistance @ If, F Capacitance Ratio Condition Q @ Vr, F Package Product Status
VN10KN3-G-P014 VN10KN3-G-P014 Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Tape & Box (TB) 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM NOT SPECIFIED NOT SPECIFIED O-PBCY-T3 1 FET General Purpose Power 1 Single 1W Tc 310mA SWITCHING 5Ohm 60V SILICON N-Channel 5 Ω @ 500mA, 10V 2.5V @ 1mA 60pF @ 25V 30V 310mA Tj 60V 5 pF 5V 10V ±30V
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0.00000000 - 0402 (1005 Metric) Microchip Technology -55°C ~ 150°C PIN - Single 0402 0.15pF @ 10V, 1MHz 25V 2Ohm @ 10mA, 1GHz
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0.00000000 - TO-236-3, SC-59, SOT-23-3 Microchip Technology -55°C ~ 125°C PIN - 1 Pair Series Connection SOT-23-3 0.32pF @ 50V, 1MHz 100 mA 50V 4Ohm @ 100mA, 100MHz
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VP2206N3-G-P003 VP2206N3-G-P003 Microchip Technology 2.2910
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0.00000000 download 6 Weeks Through Hole Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant 3 TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM 1 1 Single 1W 4 ns 740mW Tc 640mA SWITCHING 0.9Ohm 60V 16 ns SILICON P-Channel 900m Ω @ 3.5A, 10V 3.5V @ 10mA 450pF @ 25V 16ns 22 ns 20V 0.64A 640mA Tj 60V 40 pF 5V 10V ±20V
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0.00000000 download 8 Weeks Through Hole Tape & Reel (TR) 2014 yes Active 1 (Unlimited) 3 5.21mm ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) BOTTOM O-PBCY-T3 1 1 Single 90 ns 740mW Ta 30mA SWITCHING 100 ns SILICON N-Channel 1000 Ω @ 500μA, 0V 10pF @ 25V 450ns 1.3 μs 20V 500V Depletion Mode 0.03A 30mA Tj 0V ±20V
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0.00000000 download 6 Weeks Through Hole Bulk 1998 Active 1 (Unlimited) 3 EAR99 9.4mm Non-RoHS Compliant No 3 HIGH INPUT IMPEDANCE TO-205AD, TO-39-3 Metal Can 6.6mm 9.4mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e4 NICKEL GOLD BOTTOM WIRE 1 Other Transistors 1 DRAIN Single 6W 4 ns 360mW Tc 750mA SWITCHING 0.9Ohm 16 ns SILICON P-Channel 900m Ω @ 3.5A, 10V 3.5V @ 10mA 450pF @ 25V 16ns 22 ns 20V -60V 0.75A 750mA Tj 60V 40 pF 5V 10V ±20V
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0.00000000 download 5 Weeks Through Hole Bulk 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant No 3 LOW THRESHOLD TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM 1 Other Transistors 1 Single 740mW 10 ns 740mW Ta 86mA SWITCHING 20 ns SILICON P-Channel 25 Ω @ 100mA, 10V 2.4V @ 1mA 125pF @ 25V 10ns 10 ns 20V -400V 0.086A 86mA Tj 400V 25 pF 4.5V 10V ±20V
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0.00000000 - Module Microchip Technology Chassis Mount 254 A MOSFET 1.2 kV 1 Phase 4000Vrms
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0.00000000 GIGAMITE? 0805 (2012 Metric) Microchip Technology -55°C ~ 125°C PIN - Single 0805 0.35pF @ 50V, 1MHz 300V 1Ohm @ 20mA, 100MHz
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0.00000000 download 6 Weeks Through Hole Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM O-PBCY-T3 1 1 Single 8 ns 1W Tc 230mA SWITCHING 6Ohm 18 ns SILICON N-Channel 6 Ω @ 500mA, 10V 2V @ 1mA 125pF @ 25V 8ns 12 ns 30V 120V 0.23A 230mA Tj 20 pF 2.5V 10V ±30V
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