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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Diameter Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Mfr Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Type JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Frequency Range JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration Diode Type Polarity Tolerance Case Connection Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Feedback Cap-Max (Crss) Transistor Type Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Collector Emitter Saturation Voltage Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Channel Type Current - Max Voltage - Peak Reverse (Max) Resistance @ If, F Capacitance Ratio Capacitance Ratio Condition Q @ Vr, F DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Reverse Recovery Time (trr)
MML4402-GM2/TR MML4402-GM2/TR Microchip Technology 0.0000
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0.00000000 MML4400 2-SMD, No Lead Microchip Technology -55°C ~ 150°C PIN - Single 2-SMD 2pF @ 0V, 1MHz 75V 1.5Ohm @ 100mA, 100MHz
GMP4202-GM1 GMP4202-GM1 Microchip Technology 0.0000
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0.00000000 GIGAMITE? 0805 (2012 Metric) Microchip Technology -55°C ~ 125°C PIN - Single 0805 0.25pF @ 10V, 1MHz 75V 1Ohm @ 20mA, 100MHz
UM6202B UM6202B Microchip Technology 0.0000
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0.00000000 download Active 1.78(Max) RoHS non-compliant Attenuator|Switch 2 UHF Single
TN2501N8-G TN2501N8-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant 4 LOGIC LEVEL COMPATIBLE, LOW THRESHOLD TO-243AA 1.6mm 2.6mm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) FLAT 260 40 R-PSSO-F3 1 Not Qualified 1 DRAIN Single 1.6W 5 ns 1.6W Tc 400mA SWITCHING 15 ns SILICON N-Channel 2.5 Ω @ 200mA, 3V 1V @ 1mA 110pF @ 15V 15ns 15 ns 15V 18V 400mA Tj 0.56A 1.2V 3V ±20V
MMP4401-GM2/TR MMP4401-GM2/TR Microchip Technology 0.0000
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0.00000000 MMP4400 0805 (2012 Metric) Microchip Technology -55°C ~ 150°C PIN - Single 0805 0.35pF @ 50V, 1MHz 500V 800mOhm @ 100mA, 100MHz
ARF301 ARF301 Microchip Technology 0.0000
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0.00000000 download RoHS Compliant 6 P
CDLL4135C/TR CDLL4135C/TR Microchip Technology 0.0000
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0.00000000 - - Microchip Technology - - - -
KVX2801-23-4 KVX2801-23-4 Microchip Technology 0.0000
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0.00000000 - Microchip Technology
ARF466BG ARF466BG Microchip Technology 0.0000
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0.00000000
1011GN-1600VG 1011GN-1600VG Microchip Technology 0.0000
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0.00000000
GMP4215-GM1 GMP4215-GM1 Microchip Technology 0.0000
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0.00000000 download Tape and Reel Active RoHS Compliant Attenuator|Switch 2 SHF
LND150N8-G LND150N8-G Microchip Technology 0.0000
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0.00000000 download 5 Weeks Surface Mount Tape & Reel (TR) 2005 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant Lead Free Tin No 4 HIGH INPUT IMPEDANCE TO-243AA No SVHC 1.6mm 2.6mm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) e3 FLAT 260 40 R-PSSO-F3 1 1 SOURCE Single 1.2W 90 ns 1.6W Ta 30mA SWITCHING 100 ns SILICON N-Channel 1000 Ω @ 500μA, 0V 10pF @ 25V 450ns 450 ns 20V 500V Depletion Mode 0.03A 30mA Tj 0V ±20V
GCX1209-23-0/TR GCX1209-23-0/TR Microchip Technology 0.0000
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0.00000000 GCX1209 TO-236-3, SC-59, SOT-23-3 Microchip Technology Surface Mount -55°C ~ 125°C Single SOT-23-3 4.7pF @ 4V, 1MHz 30 V 3.9 C0/C30 2000 @ 4V, 50MHz
SG2003J-883B SG2003J-883B Microchip Technology 0.0000
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0.00000000 14 Weeks IN PRODUCTION (Last Updated: 1 month ago) Through Hole Tube 1997 no Active 1 (Unlimited) 16 EAR99 RoHS Compliant Contains Lead Yes 16 HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE 16-CDIP (0.300, 7.62mm) not_compliant Through Hole 150°C TJ e0 Tin/Lead (Sn/Pb) DUAL NOT SPECIFIED NOT SPECIFIED 16 Not Qualified MIL-STD-883B 7 NPN 500mA 50V 50V SWITCHING SILICON 7 NPN Darlington 1.6V 1000 @ 350mA 2V 1.6V @ 500μA, 350mA
TD9944TG-G TD9944TG-G Microchip Technology 0.0000
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0.00000000 download 5 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 8 EAR99 ROHS3 Compliant Lead Free 8 LOW THRESHOLD 8-SOIC (0.154, 3.90mm Width) Surface Mount 84.99187mg -55°C~150°C TJ ENHANCEMENT MODE e3 Matte Tin (Sn) - annealed GULL WING 260 40 2 FET General Purpose Power Not Qualified 2 SINGLE WITH BUILT-IN DIODE 10 ns 1A SWITCHING 6Ohm METAL-OXIDE SEMICONDUCTOR 20 ns SILICON 2 N-Channel (Dual) 6 Ω @ 500mA, 10V 2V @ 1mA 125pF @ 25V 10ns 10 ns 20V 240V Standard
CDLL4135D/TR CDLL4135D/TR Microchip Technology 0.0000
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0.00000000 - - Microchip Technology - - - -
APT60DQ120SG APT60DQ120SG Microchip Technology 0.0000
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0.00000000 - TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Microchip Technology Surface Mount Standard D3PAK Fast Recovery =< 500ns, > 200mA (Io) 100 μA @ 1200 V 3.3 V @ 60 A -55°C ~ 175°C 60A - 320 ns
MSC050SDA120BCT MSC050SDA120BCT Microchip Technology 0.0000
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0.00000000 - TO-247-3 Microchip Technology Through Hole Silicon Carbide Schottky TO-247-3 No Recovery Time > 500mA (Io) 200 μA @ 1200 V 1.8 V @ 50 A -55°C ~ 175°C 1200 V 109A 246pF @ 400V, 1MHz 0 ns
SG2803J-883B SG2803J-883B Microchip Technology 0.0000
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0.00000000 download 10 Weeks IN PRODUCTION (Last Updated: 1 month ago) Through Hole Tube no Active 1 (Unlimited) 18 EAR99 RoHS Compliant Contains Lead No 18 LOGIC LEVEL COMPATIBLE CDIP Through Hole -55°C~125°C TA e0 Tin/Lead (Sn/Pb) DUAL 18 MIL 8 NPN 18-CDIP 500mA 95V 50V AMPLIFIER SILICON 8 NPN Darlington 1.6V 500mA 1000 @ 350mA 2V 1.6V @ 500μA, 350mA
MPS2R10-606/TR MPS2R10-606/TR Microchip Technology 0.0000
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0.00000000 - - Microchip Technology -65°C ~ 125°C PIN - 1 Pair Common Anode - - 200 mA 150V -
GMP4202-GM1/TR GMP4202-GM1/TR Microchip Technology 0.0000
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0.00000000 GIGAMITE? 0805 (2012 Metric) Microchip Technology -55°C ~ 125°C PIN - Single 0805 0.25pF @ 10V, 1MHz 75V 1Ohm @ 20mA, 100MHz
LXP1002-23-2/TR LXP1002-23-2/TR Microchip Technology 0.0000
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0.00000000 - TO-236-3, SC-59, SOT-23-3 Microchip Technology -55°C ~ 125°C PIN - 1 Pair Series Connection SOT-23-3 0.32pF @ 50V, 1MHz 100 mA 50V 4Ohm @ 100mA, 100MHz
2N7000-G 2N7000-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Bulk 2008 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant Lead Free Tin 200mA No 3 HIGH INPUT IMPEDANCE TO-226-3, TO-92-3 (TO-226AA) No SVHC 5.334mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 BOTTOM 1 FET General Purpose Power 1 Single 1W 10 ns 800mV 1W Tc 200mA SWITCHING 5Ohm 10 ns SILICON N-Channel 5 Ω @ 500mA, 10V 3V @ 1mA 60pF @ 25V 30V 60V 0.2A 200mA Tj 5 pF 4.5V 10V ±30V
SG2023J-883B SG2023J-883B Microchip Technology 0.0000
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0.00000000 10 Weeks IN PRODUCTION (Last Updated: 1 month ago) Through Hole Tube 1997 no Active 1 (Unlimited) 16 EAR99 Non-RoHS Compliant Contains Lead Yes 16 CMOS COMPATIBLE CDIP not_compliant Through Hole 150°C TJ e0 Tin/Lead (Sn/Pb) DUAL NOT SPECIFIED NOT SPECIFIED Not Qualified MIL-STD-883 7 COMPLEX NPN 16-CDIP 500mA 95V 95V AMPLIFIER SILICON 7 NPN Darlington 1.6V 1000 @ 350mA 2V 1.6V @ 500μA, 350mA
VP2206N3-G VP2206N3-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Bulk 1998 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant No 3 TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM 1 1 Single 1W 4 ns 740mW Tc 640mA SWITCHING 0.9Ohm 16 ns SILICON P-Channel 900m Ω @ 3.5A, 10V 3.5V @ 10mA 450pF @ 25V 16ns 22 ns 20V -60V 0.64A 640mA Tj 60V 40 pF 5V 10V ±20V
TC1550TG-G TC1550TG-G Microchip Technology 0.0000
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0.00000000 download 7 Weeks Surface Mount Tape & Reel (TR) 2008 Active 1 (Unlimited) 8 4.9mm ROHS3 Compliant 8 FAST SWITCHNG 8-SOIC (0.154, 3.90mm Width) 1.75mm 3.9mm Surface Mount 84.99187mg -55°C~150°C TJ ENHANCEMENT MODE e3 Matte Tin (Sn) - annealed GULL WING 260 40 2 Other Transistors Not Qualified 2 N-CHANNEL AND P-CHANNEL Dual 10 ns 16A AMPLIFIER METAL-OXIDE SEMICONDUCTOR 15 ns SILICON N and P-Channel 60 Ω @ 50mA, 10V 4V @ 1mA 55pF @ 25V 10ns 10 ns 20V 500V Standard 350A
SG2803J-DESC SG2803J-DESC Microchip Technology 0.0000
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0.00000000 download 52 Weeks Tube 2009 Active 1 (Unlimited) RoHS Compliant Through Hole -55°C~125°C TA 18-CDIP 8 NPN Darlington 50V 500mA 1000 @ 350mA 2V 1.6V @ 500μA, 350mA
MSC030SDA120BCT MSC030SDA120BCT Microchip Technology 0.0000
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0.00000000 - TO-247-3 Microchip Technology Through Hole Silicon Carbide Schottky TO-247-3 No Recovery Time > 500mA (Io) 200 μA @ 1200 V 1.8 V @ 30 A -55°C ~ 175°C 1200 V 65A 141pF @ 400V, 1MHz 0 ns
KVX2301-23-0/TR KVX2301-23-0/TR Microchip Technology 0.0000
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0.00000000 - TO-236-3, SC-59, SOT-23-3 Microchip Technology Surface Mount -55°C ~ 125°C Single SOT-23-3 120pF @ 4V, 1MHz 22 V - 80 @ 4V, 50MHz
TC8020K6-G-M937 TC8020K6-G-M937 Microchip Technology 0.0000
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0.00000000 download 20 Weeks Surface Mount Tape & Reel (TR) 2012 yes Active 3 (168 Hours) 56 ROHS3 Compliant 56-VFQFN Exposed Pad Surface Mount 191.387631mg -55°C~150°C TJ ENHANCEMENT MODE QUAD NO LEAD 12 6 COMPLEX N-CHANNEL AND P-CHANNEL 10 ns 3.2A SWITCHING 8Ohm 200V METAL-OXIDE SEMICONDUCTOR 20 ns SILICON 6 N and 6 P-Channel 8 Ω @ 1A, 10V 2.4V @ 1mA 50pF @ 25V 15ns 15 ns Standard 200V
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