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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Mounting Type Operating Temperature Technology Operating Mode Input Type Manufacturer Package Identifier HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Max Power Dissipation Power - Max Diode Element Material Number of Elements Configuration Diode Type Application Number of Phases JEDEC-95 Code Non-rep Pk Forward Current-Max Forward Current Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Leakage Current (Max) Non-Repetitive Pk On-state Cur Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Diode Configuration Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Hold Current Collector Emitter Voltage (VCEO) RMS Current (Irms) Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Trigger Device Type Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Vce(on) (Max) @ Vge, Ic IGBT Type Voltage - Collector Emitter Breakdown (Max) Test Condition Gate Charge Td (on/off) @ 25°C Switching Energy Current - Drain (Idss) @ Vds (Vgs=0) Voltage - Cutoff (VGS off) @ Id Voltage - Breakdown (V(BR)GSS) Current Drain (Id) - Max Voltage - Off State Current - On State (It (RMS)) (Max) Current - Hold (Ih) (Max) Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) SCR Type Voltage - On State (Vtm) (Max) Current - Off State (Max) Current - On State (It (AV)) (Max) Triac Type
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0.00000000 download 16 Weeks Through Hole Tube 2013 yes Last Time Buy 1 (Unlimited) EAR99 ROHS3 Compliant 3 TO-3P-3, SC-65-3 Through Hole 150°C TJ Standard NOT SPECIFIED NOT SPECIFIED 4 Insulated Gate BIP Transistors 290W 290W N-CHANNEL Single 180 ns 60A 1.2kV 2.6V 2.6V @ 15V, 30A Trench 1200V 600V, 30A, 5 Ω, 15V 105nC 46ns/125ns 2.3mJ (on), 1.7mJ (off)
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