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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Package / Case Reach Compliance Code Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode Input Type HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Max Power Dissipation Power - Max Diode Element Material Number of Elements Configuration Diode Type Number of Phases Forward Current Forward Voltage Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Element Configuration Power Dissipation Turn On Delay Time Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Reverse Recovery Time Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Trigger Device Type Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Vce(on) (Max) @ Vge, Ic IGBT Type Gate-Emitter Thr Voltage-Max Test Condition Gate Charge Td (on/off) @ 25°C Switching Energy Voltage - Off State Current - On State (It (RMS)) (Max) Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) Triac Type
RJK5030DPP-M0#T2 RJK5030DPP-M0#T2 Renesas Electronics America 6.2934
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0.00000000 download 16 Weeks Through Hole Tube 2010 Active 1 (Unlimited) ROHS3 Compliant TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 3 28.5W Tc 5A N-Channel 1.6 Ω @ 2A, 10V 550pF @ 25V 13nC @ 10V 5A Ta 500V 10V ±30V
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