Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | Manufacturer Package Identifier | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Ambient Temperature Range High | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Output Enable | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
MT46V64M8BN-75:D | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tray | 2007 | Obsolete | 5 (48 Hours) | 60 | EAR99 | 2.5V | 1 | 12.5mm | ROHS3 Compliant | Lead Free | 60 | AUTO/SELF REFRESH | 60-TFBGA | 512 Mb | Surface Mount | 0°C~70°C TA | SDRAM - DDR | SYNCHRONOUS | 1.2mm | 8542.32.00.28 | 1 | 145mA | e1 | TIN SILVER COPPER | BOTTOM | 260 | 2.5V | 30 | MT46V64M8 | 60 | 1mm | 2.3V | Not Qualified | 2.7V | 3-STATE | 750ps | 512Mb 64M x 8 | Volatile | 15b | 2.3V~2.7V | 64MX8 | 8 | 133MHz | 0.005A | COMMON | 8192 | DRAM | Parallel | 15ns | 248 | 248 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "S99GL128S0110") |
S99GL128S0110 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V632S5PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2015 | 3 (168 Hours) | 100 | 3A991.B.2.A | 70°C | 0°C | 1 | 20mm | Non-RoHS Compliant | PIPELINED ARCHITECTURE | LQFP | Parallel | not_compliant | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | YES | 0.65mm | R-PQFP-G100 | 3.135V | SRAMs | Not Qualified | 3.3V | 3.63V | 3-STATE | RAM, SRAM | 0.2mA | 64KX32 | 32 | 2097152 bit | 100MHz | 0.015A | 5 ns | YES | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V546S100PFGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | 2007 | yes | Active | 3 (168 Hours) | 100 | 85°C | -40°C | 3.3V | 1 | 20mm | RoHS Compliant | Lead Free | No | 100 | PIPELINED ARCHITECTURE | TQFP | Parallel | 3.465V | 3.135V | 4.5 Mb | 100MHz | 14mm | 1.4mm | CMOS | 1 | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | INDUSTRIAL | YES | 0.65mm | SRAMs | 3-STATE | 5 ns | 100MHz | 512kB | RAM, SDR, SRAM | 17b | 0.26mA | 0.045A | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RMLV1616AGBG-5S2#KC0 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 18 Weeks | Tape & Reel (TR) | yes | Active | 3 (168 Hours) | 48 | ROHS3 Compliant | 48-TFBGA | Surface Mount | -40°C~85°C TA | CMOS | ASYNCHRONOUS | 1 | BOTTOM | 3V | 48 | YES | R-PBGA-B48 | 2.7V | 3.6V | 16Mb 1M x 16 | Volatile | 2.7V~3.6V | 1MX16 | 16 | 16777216 bit | 55 ns | 8 | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS25WQ040-JBLE | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tube | Active | 3 (168 Hours) | 8 | 5.28mm | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | SPI, Serial | 5.28mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 2.16mm | 1 | DUAL | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 1.27mm | S-PDSO-G8 | 1.65V | 1.95V | 4Mb 512K x 8 | Non-Volatile | 1.65V~1.95V | 4MX1 | 1 | 4194304 bit | 104MHz | 1.8V | FLASH | SPI | 1ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MX25U51245GXDI00 | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Tray | MX25xxx45 - MXSMIO™ | Active | 3 (168 Hours) | 24 | 8mm | RoHS Compliant | IT ALSO HAVE MEMORY WIDTH X1 | 24-TBGA, CSPBGA | 6mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 1.2mm | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 1mm | R-PBGA-B24 | 1.65V | 2V | 512Mb 64M x 8 | Non-Volatile | 1.65V~2V | 128MX4 | 4 | 536870912 bit | SERIAL | 166MHz | 2 | 1.8V | FLASH | SPI - Quad I/O, QPI, DTR | 60μs, 750μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7025L30J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 1 (Unlimited) | 84 | EAR99 | 70°C | 0°C | 5V | 2 | 29.21mm | RoHS Compliant | Contains Lead | No | 84 | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE | PLCC | Parallel | 5.5V | 4.5V | 128 kb | 29.21mm | 3.63mm | CMOS | 4.57mm | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 84 | COMMERCIAL | SRAMs | 5V | 3-STATE | 30 ns | 16kB | RAM, SDR, SRAM | 26b | 0.3mA | 8KX16 | Asynchronous | 0.0015A | 16b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR25S320FVM-WTR | ROHM Semiconductor | 1.7294 |
Min: 1 Mult: 1 |
0.00000000 | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 2.9mm | ROHS3 Compliant | Lead Free | 8-VSSOP, 8-MSOP (0.110, 2.80mm Width) | SPI, Serial | 32 kb | 2.8mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 0.9mm | 8542.32.00.51 | 1 | DUAL | NOT SPECIFIED | 1.8V | NOT SPECIFIED | BR25S320 | 8 | 0.65mm | R-PDSO-G8 | 1.7V | Not Qualified | 1.8/5V | 5.5V | 32Kb 4K x 8 | Non-Volatile | 0.008mA | 1.7V~5.5V | 4KX8 | 8 | 20MHz | 0.000002A | 40 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | SPI | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71P71604S167BQ8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2007 | 3 (168 Hours) | 165 | 3A991.B.2.A | 70°C | 0°C | 15mm | Non-RoHS Compliant | 165 | Parallel | not_compliant | 167MHz | 13mm | CMOS | SYNCHRONOUS | 1.2mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 1.8V | 20 | 165 | COMMERCIAL | YES | 1mm | 1.7V | SRAMs | Not Qualified | 1.5/1.81.8V | 1.9V | 3-STATE | DDR, RAM, SRAM | 0.6mA | 512KX36 | 36 | 18874368 bit | 0.275A | 0.5 ns | COMMON | 1.7V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71342LA25PFI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 64-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | IDT71342 | 32Kb 4K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M93C46-WBN6P | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | Obsolete | 1 (Unlimited) | 8 | EAR99 | 9.27mm | ROHS3 Compliant | Lead Free | No | 8 | 8-DIP (0.300, 7.62mm) | Serial | No SVHC | 1 kb | 5.33mm | 6.35mm | Through Hole | -40°C~85°C TA | CMOS | PDIP8-PDIP-B | 1 | 2mA | e3 | Matte Tin (Sn) - annealed | DUAL | 5V | M93C46 | 8 | 2.54mm | 2.5V | 3/5V | 5.5V | 85°C | 200 ns | 1Kb 128 x 8 64 x 16 | Non-Volatile | 2.5V~5.5V | 64X16 | 2MHz | 0.00001A | 40 | 1000000 Write/Erase Cycles | SOFTWARE | 5ms | MICROWIRE | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7140LA55PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2013 | no | Active | 3 (168 Hours) | 64 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 64 | TQFP | Parallel | 5.5V | 4.5V | 8 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 110mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 64 | COMMERCIAL | 0.8mm | SRAMs | 5V | 3-STATE | 55 ns | RAM, SRAM | 10b | 1KX8 | Asynchronous | 0.0015A | 8b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT53B128M32D1NP-062 WT:A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Not For New Designs | 3 (168 Hours) | ROHS3 Compliant | 200-WFBGA | Surface Mount | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 4Gb 128M x 32 | Volatile | 1.1V | 1600MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
25AA640AT-I/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 4.9mm | ROHS3 Compliant | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | 64 kb | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1.75mm | 1 | 5mA | e3 | DUAL | 260 | 2.5V | 40 | 25AA640A | 8 | 1.27mm | 160 ns | 64Kb 8K x 8 | Non-Volatile | 1.8V~5.5V | 8 | 10MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | SPI | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT49H64M9BM-25:B | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Bulk | 2015 | Obsolete | 3 (168 Hours) | 144 | EAR99 | 1.8V | 1 | 18.5mm | ROHS3 Compliant | Lead Free | No | 144 | AUTO REFRESH | 144-TFBGA | 576 Mb | Surface Mount | 0°C~95°C TC | CMOS | 1.2mm | 8542.32.00.32 | 1 | 400MHz | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 1.8V | MT49H64M9 | 144 | 1mm | 1.7V | 1.5/1.81.82.5V | 1.9V | 3-STATE | 20ns | 576Mb 64M x 9 | Volatile | 25b | 0.655mA | 1.7V~1.9V | 64MX9 | 9 | 9b | 0.055A | COMMON | DRAM | Parallel | 248 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
CG7880AAT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V3319S133BC8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tape & Reel (TR) | Active | 4 (72 Hours) | Non-RoHS Compliant | 256-LBGA | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Synchronous | IDT70V3319 | 256-CABGA (17x17) | 4.2ns | 4.5Mb 256K x 18 | Volatile | 3.15V~3.45V | 133MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V67803S150BQ8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | Non-RoHS Compliant | 165-TBGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | IDT71V67803 | 165-CABGA (13x15) | 3.8ns | 9Mb 512K x 18 | Volatile | 3.135V~3.465V | 150MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT25HP512-10PC-2.7 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 8-DIP (0.300, 7.62mm) | Through Hole | 0°C~70°C TA | EEPROM | AT25HP512 | 8-PDIP | 512Kb 64K x 8 | Non-Volatile | 2.7V~5.5V | 10MHz | EEPROM | SPI | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29GL032N90FFIS22 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | GL-N | Active | 3 (168 Hours) | ROHS3 Compliant | 64 | 64-LBGA | Surface Mount | -40°C~85°C TA | FLASH - NOR | 32Mb 4M x 8 2M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 90ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V2576YS150PFG | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | IDT71V2576 | 100-TQFP (14x14) | 3.8ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | 150MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FL128SAGMFB013 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | 2011 | FL-S | Active | 3 (168 Hours) | 16 | 10.3mm | ROHS3 Compliant | ALSO CONFIGURABLE AS 128M X 1 | 16-SOIC (0.295, 7.50mm Width) | SPI, Serial | 7.5mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 2.65mm | 8542.32.00.51 | 1 | e3 | Matte Tin (Sn) | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-G16 | 2.7V | 3.6V | AEC-Q100 | 128Mb 16M x 8 | Non-Volatile | 2.7V~3.6V | 32MX4 | 4 | 134217728 bit | 133MHz | 2 | 500ms | 3V | FLASH | SPI - Quad I/O | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
24LC32A-I/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 5 Weeks | Through Hole | Tube | 2005 | yes | Active | 1 (Unlimited) | 8 | 2.5V | 9.4mm | ROHS3 Compliant | Lead Free | No | 8 | 2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 8-DIP (0.300, 7.62mm) | 2-Wire, I2C, Serial | No SVHC | 32 kb | 3.3mm | 6.35mm | Through Hole | -40°C~85°C TA | CMOS | 1 | 3mA | e3 | Matte Tin (Sn) | DUAL | 5V | 24LC32A | 8 | 2.54mm | 2/5V | 5.5V | 900ns | 32Kb 4K x 8 | Non-Volatile | 2.5V~5.5V | 400kHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT25TL512HBA8ESF-0AAT | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tube | Automotive, AEC-Q100 | Active | 3 (168 Hours) | 16 | 10.3mm | ROHS3 Compliant | 16-SOIC (0.295, 7.50mm Width) | 7.5mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 2.65mm | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-G16 | 2.7V | 3.6V | 512Mb 64M x 8 | Non-Volatile | 2.7V~3.6V | 64MX8 | 8 | 536870912 bit | SERIAL | 133MHz | 1 | 3V | FLASH | SPI | 8ms, 2.8ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS7C32098A-10TIN | Alliance Memory, Inc. | 5.2709 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | 2001 | Active | 3 (168 Hours) | 85°C | -40°C | ROHS3 Compliant | 44 | 44-TSOP (0.400, 10.16mm Width) | Parallel | 3.6V | 3V | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 44-TSOP2 | 10ns | 2Mb 128K x 16 | Volatile | 3V~3.6V | SRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S29GL256S90FHI020 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Surface Mount | Tray | 2015 | GL-S | Active | 3 (168 Hours) | 64 | 3A991.B.1.A | 13mm | ROHS3 Compliant | No | 64 | 64-LBGA | 256 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.4mm | 8542.32.00.51 | 1 | 60mA | e1 | TIN SILVER COPPER | BOTTOM | 260 | 3V | 40 | 1mm | 2.7V | 3/3.3V | 3.6V | 90ns | 256Mb 16M x 16 | Non-Volatile | 24b | 2.7V~3.6V | 16MX16 | 16 | Asynchronous | 0.0001A | 16b | 3V | YES | YES | YES | 256 | 32B | YES | YES | FLASH | Parallel | 60ns | 64K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS21ES08G-JQLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 2 Weeks | Tray | Active | 3 (168 Hours) | 100 | 18mm | ROHS3 Compliant | 100-LBGA | 14mm | Surface Mount | -40°C~85°C TA | FLASH - NAND (MLC) | SYNCHRONOUS | 1.4mm | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3.3V | 10 | YES | 1mm | R-PBGA-B100 | 2.7V | 3.6V | 64Gb 8G x 8 | Non-Volatile | 2.7V~3.6V | 8GX8 | 8 | 68719476736 bit | PARALLEL | 200MHz | 3.3V | FLASH | eMMC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
FT24C04A-ESR-T | Fremont Micro Devices Ltd | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Discontinued | 1 (Unlimited) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C | 550ns | 4Kb 512 x 8 | Non-Volatile | 1.8V~5.5V | 1MHz | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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70V631S10BCG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tape & Reel | 2009 | yes | Active | 3 (168 Hours) | 256 | 70°C | 0°C | 3.3V | 2 | 17mm | RoHS Compliant | Lead Free | No | 256 | Parallel | 4.5 Mb | 17mm | 1.4mm | CMOS | 1.5mm | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 3.3V | 30 | 256 | COMMERCIAL | YES | 1mm | 3.15V | SRAMs | 3.45V | 3-STATE | RAM, SRAM | 36b | 0.5mA | 0.015A | 10 ns | COMMON | 3.15V |
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