Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Supplier Device Package | Output Characteristics | Access Time | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AT45DB081D-MU | Adesto Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 1997 | yes | Obsolete | 3 (168 Hours) | 8 | EAR99 | 6mm | RoHS Compliant | No | 8 | ORGANIZED AS 4096 PAGES OF 264 BYTES EACH | 8-VDFN Exposed Pad | SPI, Serial | No SVHC | 8 Mb | Surface Mount | -40°C~85°C TC | CMOS | 15mA | 1mm | 1 | 15mA | e3 | MATTE TIN | DUAL | 260 | 3V | 40 | 8 | 1.27mm | 2.7V | 3/3.3V | 3.6V | 6 ns | 8Mb 264Bytes x 4096 pages | Non-Volatile | 1b | 2.7V~3.6V | 1 | Synchronous | 8b | 66MHz | 0.000025A | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 2.7V | 256B | SPI | FLASH | SPI | 4ms | |||||||||||||||||||||||||||||||||||||||||||||||||||
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M95M04-DRDW6TP | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 8-TSSOP (0.173, 4.40mm Width) | Surface Mount | -40°C~85°C TA | 4Mb 512K x 8 | Non-Volatile | 1.8V~5.5V | 10MHz | SPI | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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7026S15J | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 84-LCC (J-Lead) | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7026 | 84-PLCC (29.21x29.21) | 15ns | 256Kb 16K x 16 | Volatile | 4.5V~5.5V | SRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F2T08CWCBBJ7-6R:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 152-LBGA | Surface Mount | 0°C~70°C TA | FLASH - NAND | 152-LBGA (14x18) | 2Tb 256G x 8 | Non-Volatile | 2.7V~3.6V | 167MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S29GL512P10FAIR22 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2015 | GL-P | Obsolete | 3 (168 Hours) | 64 | 3A991.B.1.A | 13mm | ROHS3 Compliant | 64-LBGA | not_compliant | 11mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | ASYNCHRONOUS | 1.4mm | 8542.32.00.51 | 1 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 3.3V | YES | 1mm | R-PBGA-B64 | 3V | Not Qualified | 3.3V | 3.6V | 512Mb 32M x 16 | Non-Volatile | 0.11mA | 3V~3.6V | 512MX1 | 1 | 536870912 bit | 0.000005A | 100 ns | 8 | 3V | YES | YES | YES | 512 | 8/16words | YES | YES | FLASH | Parallel | 100ns | 128K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MTFC16GJVEC-WT TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | e•MMC™ | Obsolete | 3 (168 Hours) | ROHS3 Compliant | Surface Mount | -25°C~85°C TA | FLASH - NAND | MTFC16G | 128Gb 16G x 8 | Non-Volatile | 2.7V~3.6V | FLASH | MMC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT24C16C-PUM | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Through Hole | Tube | 2005 | yes | Active | 1 (Unlimited) | 8 | 10.16mm | ROHS3 Compliant | Tin | No | 8 | 8-DIP (0.300, 7.62mm) | 2-Wire, I2C, Serial | No SVHC | 16 kb | 4.953mm | 7.112mm | Through Hole | -40°C~85°C TA | CMOS | 1 | 3mA | e3 | DUAL | 2.5V | AT24C16C | 2.54mm | 1.7V | 5.5V | 550ns | 16Kb 2K x 8 | Non-Volatile | 1.7V~5.5V | 1MHz | 5ms | I2C | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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7024S17JI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 84-LCC (J-Lead) | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | 64Kb 4K x 16 | Volatile | 4.5V~5.5V | SRAM | Parallel | 17ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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W632GU6MB-09 | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | 96 | EAR99 | 1 | 13mm | ROHS3 Compliant | AUTO/SELF REFRESH | 96-VFBGA | 7.5mm | Surface Mount | 0°C~95°C TC | SDRAM - DDR3L | SYNCHRONOUS | 1mm | 1 | BOTTOM | 1.35V | YES | 0.8mm | R-PBGA-B96 | 1.283V | 1.45V | 20ns | 2Gb 128M x 16 | Volatile | 1.283V~1.45V | 128MX16 | 16 | 2147483648 bit | 1.067GHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71V30VL55TFI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 64-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | 8Kb 1K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AS4C16M16MD1-6BCN | Alliance Memory, Inc. | 3.5129 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | 2013 | Active | 3 (168 Hours) | 60 | EAR99 | 1.8V | 1 | 9mm | ROHS3 Compliant | Lead Free | 60 | AUTO/SELF REFRESH | 60-TFBGA | 256 Mb | Surface Mount | -25°C~85°C TJ | SDRAM - Mobile LPDDR | SYNCHRONOUS | 1.025mm | 8542.32.00.24 | 1 | BOTTOM | NOT SPECIFIED | NOT SPECIFIED | YES | 0.8mm | 1.7V | 1.95V | 6.5 ns | 256Mb 16M x 16 | Volatile | 13b | 1.7V~1.95V | 16MX16 | 16 | 166MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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EDFA164A2MA-GD-F-R TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | -30°C~85°C TC | SDRAM - Mobile LPDDR3 | 16Gb 256M x 64 | Volatile | 1.14V~1.95V | 800MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS43DR16640B-25EBLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tray | Active | 3 (168 Hours) | 84 | EAR99 | 1.8V | 1 | 12.5mm | ROHS3 Compliant | 84 | AUTO/SELF REFRESH | 84-TFBGA | 1 Gb | Surface Mount | -40°C~85°C TA | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | 8542.32.00.32 | 1 | 240mA | 400MHz | BOTTOM | 1.8V | 0.8mm | 1.7V | Not Qualified | 1.9V | 3-STATE | 450ps | 1Gb 64M x 16 | Volatile | 16b | 1.7V~1.9V | 64MX16 | 16 | 16b | 0.015A | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F512G08EMCBBJ5-10ES:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 0°C~70°C TA | FLASH - NAND | 512Gb 64G x 8 | Non-Volatile | 2.7V~3.6V | 100MHz | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71421LA25J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | no | Active | 3 (168 Hours) | 52 | EAR99 | 70°C | 0°C | 5V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP | PLCC | Parallel | 5.5V | 4.5V | 16 kb | 19mm | 3.63mm | CMOS | 1 | 170mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 3-STATE | 25 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.0015A | 8b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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70P3519S200BCG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel | 2009 | yes | Discontinued | 3 (168 Hours) | 256 | 70°C | 0°C | 1.8V | 2 | 17mm | RoHS Compliant | Lead Free | No | 256 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | Parallel | 9 Mb | 200MHz | 17mm | 1.4mm | CMOS | 1.5mm | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 1.8V | 256 | COMMERCIAL | YES | 1mm | 1.7V | 1.9V | RAM, SRAM | 18b | 10 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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W632GU6MB-15 TR | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 96-VFBGA | Surface Mount | 0°C~95°C TC | SDRAM - DDR3 | 20ns | 2Gb 128M x 16 | Volatile | 1.283V~1.45V | 667MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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R1LV0108ESA-7SR#S0 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 24 Weeks | Tape & Reel (TR) | 2007 | yes | Active | 1 (Unlimited) | 32 | EAR99 | 3V | 1 | ROHS3 Compliant | Lead Free | No | 32-TFSOP (0.465, 11.80mm Width) | 1 Mb | Surface Mount | 0°C~70°C TA | CMOS | 1 | DUAL | 3V | R1LV0108E | 32 | YES | 0.5mm | R-PDSO-G32 | 2.7V | 3.6V | 3-STATE | 1Mb 128K x 8 | Volatile | 17b | 0.025mA | 2.7V~3.6V | 8 | 0.000002A | 70 ns | COMMON | 2V | SRAM | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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25LC040A-I/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 1 Weeks | Through Hole | Tube | 2006 | yes | Active | Not Applicable | 8 | EAR99 | 5V | 10.16mm | ROHS3 Compliant | Lead Free | No | 8 | DATA RETENTION > 200 YEARS; 1,000,000 ERASE/WRITE CYCLES | 8-DIP (0.300, 7.62mm) | SPI, Serial | No SVHC | 4 kb | 4.953mm | 7.112mm | Through Hole | -40°C~85°C TA | CMOS | 1 | 5mA | e3 | Matte Tin (Sn) - annealed | DUAL | 5V | 25LC040A | 8 | 2.54mm | 50 ns | 4Kb 512 x 8 | Non-Volatile | 2.5V~5.5V | 10MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | SPI | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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S29PL127J65BFW000 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | PL-J | Obsolete | 3 (168 Hours) | 80 | 3A991.B.1.A | 11mm | ROHS3 Compliant | TOP AND BOTTOM BOOT BLOCK | 80-VFBGA | 8mm | Surface Mount | -25°C~85°C TA | FLASH - NOR | ASYNCHRONOUS | 1mm | 8542.32.00.51 | 1 | e1 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | BOTTOM | 260 | 3V | 40 | YES | 0.8mm | R-PBGA-B80 | 2.7V | Not Qualified | 3/3.3V | 3.6V | 128Mb 8M x 16 | Non-Volatile | 0.07mA | 2.7V~3.6V | 8MX16 | 16 | 134217728 bit | 0.000005A | 65 ns | 3V | YES | YES | YES | 16254 | 8words | YES | YES | FLASH | Parallel | 65ns | 4K32K | BOTTOM/TOP | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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7134LA25JGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2013 | yes | Active | 3 (168 Hours) | 52 | EAR99 | 85°C | -40°C | 5V | 2 | 19mm | RoHS Compliant | Lead Free | No | 52 | PLCC | Parallel | 5.5V | 4.5V | 32 kb | 19mm | 3.63mm | CMOS | 4.57mm | 1 | 260mA | e3 | Matte Tin (Sn) - annealed | QUAD | J BEND | 260 | 5V | 52 | INDUSTRIAL | SRAMs | 5V | 3-STATE | 25 ns | 4kB | RAM, SDR, SRAM | 24b | 4KX8 | Asynchronous | 0.004A | 8b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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7142LA55L48B | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | 2007 | Active | 125°C | -55°C | 5V | 2 | 14.2mm | RoHS Compliant | Contains Lead | No | 48 | LCC | Parallel | 5.5V | 4.5V | 16 kb | 14.22mm | 1.78mm | 140mA | 55 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 8b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DS28E04S-100+T | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tape & Reel (TR) | 2011 | yes | Active | 1 (Unlimited) | 16 | EAR99 | 5V | 9.9mm | ROHS3 Compliant | Lead Free | No | 16 | 16-SOIC (0.154, 3.90mm Width) | Serial | 5.25V | 2.8V | 4 kb | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1.75mm | 8542.32.00.51 | 1 | e3 | Matte Tin (Sn) | DUAL | 260 | 3V | DS28E04 | 16 | YES | 1.27mm | 2μs | 4Kb 256 x 16 | Non-Volatile | 4KX1 | 1 | PARALLEL | 50000 Write/Erase Cycles | EEPROM | 1-Wire® | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1046D-10VXIT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tape & Reel (TR) | 1996 | yes | Obsolete | 3 (168 Hours) | 32 | 5V | 1 | 20.955mm | ROHS3 Compliant | Lead Free | 32 | 32-BSOJ (0.400, 10.16mm Width) | 4 Mb | 10GHz | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 3.7592mm | 1 | 90mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 5V | 40 | CY7C1046 | Not Qualified | 5V | 3-STATE | 4Mb 1M x 4 | Volatile | 20b | 4.5V~5.5V | 4 | Asynchronous | 4b | COMMON | 2V | SRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT45DB021D-SH-T | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2012 | Obsolete | 1 (Unlimited) | ROHS3 Compliant | 8 | 8-SOIC (0.209, 5.30mm Width) | Surface Mount | -40°C~85°C TC | FLASH | AT45DB021 | 8-SOIC | 2Mb 264Bytes x 1024 pages | Non-Volatile | 2.7V~3.6V | 66MHz | FLASH | SPI | 4ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1312KV18-250BZC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Surface Mount | Tray | 2003 | no | Active | 3 (168 Hours) | 165 | 1.8V | 2 | 15mm | Non-RoHS Compliant | No | 165 | PIPELINED ARCHITECTURE | 165-LBGA | 18 Mb | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QDR II | 1.4mm | 1 | 560mA | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 235 | 1.8V | 20 | CY7C1312 | 165 | 1mm | 1.7V | 1.9V | 3-STATE | 450 ps | 18Mb 1M x 18 | Volatile | 19b | 1.7V~1.9V | 1MX18 | 18 | Synchronous | 250MHz | 18b | SEPARATE | 1.7V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS43DR81280C-25DBL | ISSI, Integrated Silicon Solution Inc | 4.1625 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tray | Active | 3 (168 Hours) | 60 | EAR99 | 1 | 10.5mm | ROHS3 Compliant | AUTO/SELF REFRESH | 60-TFBGA | 8mm | Surface Mount | 0°C~85°C TC | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | 1 | e1 | TIN SILVER COPPER | BOTTOM | 260 | 1.8V | 10 | YES | 0.8mm | R-PBGA-B60 | 1.7V | Not Qualified | 1.8V | 1.9V | 3-STATE | 400ps | 1Gb 128M x 8 | Volatile | 0.3mA | 1.7V~1.9V | 128MX8 | 8 | 1073741824 bit | 400MHz | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PC28F256J3F95A | Micron Technology Inc. | 64.4574 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 1997 | StrataFlash™ | yes | Obsolete | 3 (168 Hours) | 64 | 3A991.B.1.A | 13mm | ROHS3 Compliant | No | 64 | 64-TBGA | 256 Mb | 10mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.2mm | 8542.32.00.51 | 1 | 31mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3V | 30 | 28F256J3 | 64 | YES | 1mm | 2.7V | 256Mb 32M x 8 16M x 16 | Non-Volatile | 2.7V~3.6V | 16MX16 | 16 | Asynchronous | 95 ns | 8 | FLASH | Parallel | 95ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1312LV18-250BZXC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Last Time Buy | 3 (168 Hours) | ROHS3 Compliant | 165 | 165-LBGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QDR II | 18Mb 1M x 18 | Volatile | 1.7V~1.9V | 250MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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W948D2FBJX6E | Winbond Electronics | 2.0470 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Surface Mount | Tray | 2016 | Active | 3 (168 Hours) | 90 | EAR99 | 1.8V | 1 | 13mm | ROHS3 Compliant | No | 90 | AUTO/SELF REFRESH | 90-TFBGA | 256 Mb | Surface Mount | -25°C~85°C TC | SDRAM - Mobile LPDDR | 1.025mm | 8542.32.00.02 | 1 | 50mA | BOTTOM | 1.8V | 90 | 0.8mm | 1.7V | 1.95V | 3-STATE | 5ns | 256Mb 8M x 32 | Volatile | 14b | 1.7V~1.95V | 4MX32 | 32 | 32b | 166MHz | 0.00001A | COMMON | 4096 | DRAM | Parallel | 15ns | 24816 | 24816 |
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AT45DB081D-MU Adesto Technologies
3/3.3V V Surface Mount 8 Pin Memory IC 8 Mb kb 6mm mm 15mA mA
Price: 0.0000
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S29GL512P10FAIR22 Cypress Semiconductor Corp
3.3V V GL-P Memory IC GL-P Series 13mm mm
Price: 0.0000
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AT24C16C-PUM Microchip Technology
Through Hole Memory IC AT24C16C 16 kb kb 10.16mm mm 3mA mA
Price: 0.0000
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IS43DR16640B-25EBLI ISSI, Integrated Silicon Solution Inc
Surface Mount Memory IC 1 Gb kb 12.5mm mm 240mA mA
Price: 0.0000
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71421LA25J Integrated Device Technology (IDT)
5V V Surface Mount 52 Pin Memory IC 16 kb kb 19mm mm 170mA mA 8b b
Price: 0.0000
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70P3519S200BCG8 Integrated Device Technology (IDT)
256 Pin Memory IC 9 Mb kb 17mm mm
Price: 0.0000
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25LC040A-I/P Microchip Technology
Through Hole 8 Pin Memory IC 25LC040A 4 kb kb 10.16mm mm 5mA mA
Price: 0.0000
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S29PL127J65BFW000 Cypress Semiconductor Corp
3/3.3V V PL-J Memory IC PL-J Series 11mm mm
Price: 0.0000
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7134LA25JGI Integrated Device Technology (IDT)
5V V Surface Mount 52 Pin Memory IC 32 kb kb 19mm mm 260mA mA 8b b
Price: 0.0000
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7142LA55L48B Integrated Device Technology (IDT)
Surface Mount Memory IC 16 kb kb 14.2mm mm 140mA mA 8b b
Price: 0.0000
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CY7C1046D-10VXIT Cypress Semiconductor Corp
5V V Surface Mount Memory IC CY7C1046 4 Mb kb 20.955mm mm 90mA mA 4b b
Price: 0.0000
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CY7C1312KV18-250BZC Cypress Semiconductor Corp
Surface Mount 165 Pin Memory IC CY7C1312 18 Mb kb 15mm mm 560mA mA 18b b
Price: 0.0000
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IS43DR81280C-25DBL ISSI, Integrated Silicon Solution Inc
1.8V V Memory IC 10.5mm mm
Price: 4.1625
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PC28F256J3F95A Micron Technology Inc.
StrataFlash™ 64 Pin Memory IC StrataFlash™ Series 28F256J3 256 Mb kb 13mm mm 31mA mA
Price: 64.4574
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W948D2FBJX6E Winbond Electronics
Surface Mount 90 Pin Memory IC 256 Mb kb 13mm mm 50mA mA
Price: 2.0470
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