Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Output Enable | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Serial Bus Type | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
.png "MT25QL128ABB8E12-0AUT") |
MT25QL128ABB8E12-0AUT | Micron Technology Inc. | 4.7389 |
Min: 1 Mult: 1 |
0.00000000 | 7 Weeks | Box | Automotive, AEC-Q100 | Active | 24 | 8mm | RoHS Compliant | 24-TBGA | compliant | 6mm | Surface Mount | -40°C~125°C TA | FLASH - NOR | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1mm | R-PBGA-B24 | 2.7V | 3.6V | 128Mb 16M x 8 | Non-Volatile | 2.7V~3.6V | 16MX8 | 8 | 134217728 bit | SERIAL | 133MHz | 1 | 3V | FLASH | SPI | 8ms, 2.8ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT53B128M32D1DS-062 AUT:A TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 11 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 200-WFBGA | Surface Mount | -40°C~125°C TC | SDRAM - Mobile LPDDR4 | 4Gb 128M x 32 | Volatile | 1.1V | 1600MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT49BV163A-70TU | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 1997 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | -40°C~85°C TC | AT49BV163 | 70ns | 16Mb 2M x 8 1M x 16 | Non-Volatile | 2.65V~3.6V | FLASH | Parallel | 200μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7050L25G | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | 2001 | no | Active | 1 (Unlimited) | 132 | EAR99 | 70°C | 0°C | 4 | 30.48mm | RoHS Compliant | Contains Lead | No | 108 | BATTERY BACKUP OPERATION | 30.48mm | 3.68mm | CMOS | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn/Pb) | QUAD | GULL WING | 240 | 5V | 108 | COMMERCIAL | YES | 2.54mm | S-PQFP-G132 | 4.5V | SRAMs | 5V | 5.5V | 3-STATE | RAM, SRAM | 0.305mA | 1KX8 | 8192 bit | PARALLEL | 0.0006A | 25 ns | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT49F002-12PI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1999 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 32-DIP (0.600, 15.24mm) | Through Hole | -40°C~85°C TC | FLASH | AT49F002 | 32-PDIP | 120ns | 2Mb 256K x 8 | Non-Volatile | 4.5V~5.5V | FLASH | Parallel | 50μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M29W040B70N1 | STMicroelectronics | 1.2152 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | 32 | EAR99 | 18.4mm | ROHS3 Compliant | 32 | 32-TFSOP (0.724, 18.40mm Width) | Surface Mount | 0°C~70°C TA | FLASH - NOR | ASYNCHRONOUS | 1.2mm | 1 | e0 | TIN LEAD | DUAL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | M29W040 | 32 | YES | 0.5mm | 2.7V | Not Qualified | 3/3.3V | 3.6V | 4Mb 512K x 8 | Non-Volatile | 0.02mA | 2.7V~3.6V | 512KX8 | 8 | 4194304 bit | 8b | 0.0001A | 70 ns | 100000 Write/Erase Cycles | 2.7V | YES | YES | YES | 8 | FLASH | Parallel | 70ns | 64K | |||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT29F128G08CBCEBL05B3WC1ES | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Bulk | Active | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V3556SA133BGG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2006 | yes | Active | 3 (168 Hours) | 119 | 70°C | 0°C | 3.3V | 1 | 14mm | RoHS Compliant | Lead Free | No | 119 | BGA | Parallel | 3.465V | 3.135V | 4.5 Mb | 133MHz | 22mm | 2.15mm | CMOS | 2.36mm | 1 | 300mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 3.3V | 30 | 119 | COMMERCIAL | SRAMs | 3-STATE | 4.2 ns | 133MHz | 512kB | RAM, SDR, SRAM | 17b | Synchronous | 0.04A | 36b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1518AV18-250BZI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2003 | Obsolete | 3 (168 Hours) | 165 | 3A991.B.2.A | 1.8V | 17mm | Non-RoHS Compliant | Contains Lead | 165 | PIPELINED ARCHITECTURE | 165-LBGA | not_compliant | 72 Mb | 15mm | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, DDR II | 1.4mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 220 | 1.8V | NOT SPECIFIED | CY7C1518 | 165 | YES | 1mm | 1.7V | Not Qualified | 1.9V | 3-STATE | 450 ps | 72Mb 4M x 18 | Volatile | 0.8mA | 1.7V~1.9V | 4MX18 | 18 | 250MHz | COMMON | 1.7V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S34MS01G200TFB000 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Automotive, AEC-Q100, MS-2 | Discontinued | 3 (168 Hours) | 48 | 18.4mm | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | 12mm | Surface Mount | -40°C~105°C TA | FLASH - NAND | ASYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | e3 | Matte Tin (Sn) | DUAL | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 0.5mm | R-PDSO-G48 | 1.7V | 1.95V | 1Gb 128M x 8 | Non-Volatile | 1.7V~1.95V | 128MX8 | 8 | 1073741824 bit | 1.8V | FLASH | Parallel | 45ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
93LC56BX-E/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tube | 2003 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Serial | 2 kb | 3.9mm | Surface Mount | -40°C~125°C TA | CMOS | 1.75mm | 1 | 2mA | e3 | DUAL | 260 | 3V | 40 | 93LC56B | 8 | 1.27mm | 2.5V | 3/5V | 5.5V | 250 ns | 2Kb 128 x 16 | Non-Volatile | 2.5V~5.5V | 16 | 2MHz | 0.000005A | 8 | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 6ms | MICROWIRE | EEPROM | SPI | 6ms | |||||||||||||||||||||||||||||||||||||||||||||||
 |
AT25SF081-MHF-T | Adesto Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 33 Weeks | Tape & Reel (TR) | 2014 | Active | 1 (Unlimited) | 8 | 6mm | ROHS3 Compliant | 8-UDFN Exposed Pad | 5mm | Surface Mount | -40°C~85°C TC | CMOS | SYNCHRONOUS | 0.6mm | 8542.32.00.51 | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-N8 | 2.3V | 3.6V | 8Mb 1M x 8 | Non-Volatile | 2.3V~3.6V | 8MX1 | 1 | 8388608 bit | SERIAL | 104MHz | 3V | FLASH | SPI | 5μs, 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7007S55PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2010 | no | Active | 3 (168 Hours) | 80 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 80 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | TQFP | Parallel | 5.5V | 4.5V | 256 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 270mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 80 | COMMERCIAL | 0.65mm | SRAMs | 5V | 3-STATE | 55 ns | 32kB | RAM, SDR, SRAM | 30b | Asynchronous | 0.015A | 8b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V67602S150PFI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | IDT71V67602 | 3.8ns | 9Mb 256K x 36 | Volatile | 3.135V~3.465V | 150MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V65602S100BG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2007 | 3 (168 Hours) | 119 | 3A991.B.2.A | 70°C | 0°C | 22mm | Non-RoHS Compliant | PIPELINED ARCHITECTURE | BGA | Parallel | not_compliant | 100MHz | 14mm | CMOS | SYNCHRONOUS | 2.36mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 119 | COMMERCIAL | YES | 1.27mm | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.25mA | 256KX36 | 36 | 9437184 bit | 0.04A | 5 ns | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
|
71V3577S85BQI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 11 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 165 | 85°C | -40°C | 3.3V | 1 | 15mm | RoHS Compliant | Contains Lead | No | 165 | FLOW-THROUGH ARCHITECTURE | FBGA | Parallel | 3.465V | 3.135V | 4.5 Mb | 87MHz | 13mm | 1.2mm | CMOS | 1 | 190mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 165 | INDUSTRIAL | SRAMs | 3-STATE | 8.5 ns | RAM, SRAM | 17b | Synchronous | 0.035A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V631S12PRFI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2009 | no | Active | 3 (168 Hours) | 128 | 85°C | -40°C | 3.3V | 2 | 20mm | RoHS Compliant | Contains Lead | No | 128 | TQFP | Parallel | 3.45V | 3.15V | 4.5 Mb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 515mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 225 | 3.3V | 128 | INDUSTRIAL | 0.5mm | SRAMs | 3-STATE | 12 ns | RAM, SRAM | 18b | Asynchronous | 0.015A | 18b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT53D512M32D2DS-046 WT:D TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 200-WFBGA | Surface Mount | -30°C~85°C | SDRAM - Mobile LPDDR4 | 16Gb 512M x 32 | Volatile | 0.6V 1.1V | 2.133GHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
AK93C45CU | AKM Semiconductor Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Bulk | Obsolete | 1 (Unlimited) | Surface Mount | -40°C~85°C TA | EEPROM | 8-USON | 1Kb 64 x 16 | Non-Volatile | 1.5V~5.5V | 4MHz | EEPROM | SPI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V416VL12BEI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2005 | 85°C | -40°C | Non-RoHS Compliant | TFBGA | Parallel | RAM, SRAM - Asynchronous | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V416S10PH8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2007 | no | 3 (168 Hours) | 44 | 3A991.B.2.A | 70°C | 0°C | 1 | 18.41mm | Non-RoHS Compliant | TSOP | Parallel | not_compliant | 10.16mm | CMOS | 1.2mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | DUAL | GULL WING | 225 | 3.3V | 20 | 44 | COMMERCIAL | YES | 0.8mm | R-PDSO-G44 | 3V | SRAMs | Not Qualified | 3.3V | 3.6V | 3-STATE | RAM, SRAM - Asynchronous | 0.2mA | 256KX16 | 16 | 4194304 bit | 0.02A | 10 ns | YES | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70P255L65BYGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Bulk | 2011 | yes | Active | 3 (168 Hours) | 100 | EAR99 | 85°C | -40°C | 2 | 6mm | RoHS Compliant | Lead Free | No | 100 | TFBGA | Parallel | 3V | 1.8V | 128 kb | 6mm | 1mm | CMOS | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 1.8V | 30 | 100 | INDUSTRIAL | YES | 0.5mm | SRAMs | 3-STATE | 65 ns | 16kB | RAM, SDR, SRAM | 26b | 0.07mA | 8KX16 | 0.000008A | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
709279L9PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Bulk | 2009 | Active | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | TQFP | Parallel | 5.5V | 4.5V | 512 kb | 40MHz | 14mm | 1.4mm | 350mA | 9 ns | 64kB | RAM, SDR, SRAM | 30b | Synchronous | 16b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71421SA35PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | no | Active | 3 (168 Hours) | 64 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 64 | INTERRUPT FLAG; AUTOMATIC POWER-DOWN | TQFP | Parallel | 5.5V | 4.5V | 16 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 165mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 64 | COMMERCIAL | 0.8mm | SRAMs | 5V | 3-STATE | 35 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.015A | 8b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||
|
7132SA55C | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | Bulk | 2007 | no | Active | 1 (Unlimited) | 48 | EAR99 | 70°C | 0°C | 5V | 2 | 61.72mm | RoHS Compliant | Contains Lead | No | 48 | AUTOMATIC POWER-DOWN | DIP | Parallel | 5.5V | 4.5V | 16 kb | 15.24mm | 3.3mm | CMOS | 1 | 155mA | e0 | Tin/Lead (Sn/Pb) | DUAL | 240 | 5V | 48 | COMMERCIAL | SRAMs | 5V | 3-STATE | 55 ns | RAM, SRAM | 22b | Asynchronous | 0.015A | 8b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V3556S150BG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2007 | 70°C | 0°C | Non-RoHS Compliant | BGA | Parallel | 150MHz | RAM, SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
W25Q16JWSVIQ | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | SpiFlash® | Active | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 16Mb 2M x 8 | Non-Volatile | 1.65V~1.95V | 133MHz | FLASH | SPI - Quad I/O | 3ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS45S16160G-7CTLA1 | ISSI, Integrated Silicon Solution Inc | 6.5681 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Surface Mount | Tray | Active | 3 (168 Hours) | 54 | 3.3V | 1 | 22.22mm | ROHS3 Compliant | 54 | AUTO/SELF REFRESH | 54-TSOP (0.400, 10.16mm Width) | 256 Mb | Surface Mount | -40°C~85°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 1 | 130mA | DUAL | 3.3V | 0.8mm | 3V | Not Qualified | 3.6V | 3-STATE | 5.4ns | AEC-Q100 | 256Mb 16M x 16 | Volatile | 15b | 3V~3.6V | 16MX16 | 16 | 16b | 143MHz | 0.004A | COMMON | 8192 | DRAM | Parallel | 1248FP | 1248 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
47L04T-I/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 9 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 8 | 4.9mm | ROHS3 Compliant | IT ALSO HAS EEPROM BACKUP OF 512 X 8 BITS | 8-SOIC (0.154, 3.90mm Width) | 3.9mm | Surface Mount | -40°C~85°C TA | EEPROM, SRAM | SYNCHRONOUS | 1.75mm | 1 | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 3V | 40 | 47L04 | YES | 1.27mm | R-PDSO-G8 | 2.7V | 3.6V | 400ns | TS 16949 | 4Kb 512 x 8 | Non-Volatile | 2.7V~3.6V | 512X8 | 8 | 4096 bit | 1MHz | EERAM | I2C | 1ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MTFC4GACAALT-4M IT | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 7 Weeks | Tray | e•MMC™ | Active | 3 (168 Hours) | ROHS3 Compliant | 100-TBGA | Surface Mount | -40°C~85°C TA | FLASH - NAND | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 260 | 30 | 32Gb 4G x 8 | Non-Volatile | 2.7V~3.6V | 2.7V | FLASH | MMC |
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MT25QL128ABB8E12-0AUT Micron Technology Inc.
Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series 8mm mm
Price: 4.7389
RFQ -
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71V3556SA133BGG8 Integrated Device Technology (IDT)
Surface Mount 119 Pin Memory IC 4.5 Mb kb 14mm mm 300mA mA 36b b
Price: 0.0000
RFQ -
CY7C1518AV18-250BZI Cypress Semiconductor Corp
165 Pin Memory IC CY7C1518 72 Mb kb 17mm mm
Price: 0.0000
RFQ -
S34MS01G200TFB000 Cypress Semiconductor Corp
Automotive, AEC-Q100, MS-2 Memory IC Automotive, AEC-Q100, MS-2 Series 18.4mm mm
Price: 0.0000
RFQ -
93LC56BX-E/SN Microchip Technology
3/5V V Surface Mount 8 Pin Memory IC 93LC56B 2 kb kb 4.9mm mm 2mA mA
Price: 0.0000
RFQ -
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7007S55PF Integrated Device Technology (IDT)
5V V Surface Mount 80 Pin Memory IC 256 kb kb 14mm mm 270mA mA 8b b
Price: 0.0000
RFQ -
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RFQ -
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