Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Operating Temperature (Max) | Operating Temperature (Min) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Supplier Device Package | Output Characteristics | Access Time | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Memory IC Type | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Output Enable | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Page Size | Serial Bus Type | I2C Control Byte | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IDT71V25761S200PFI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2009 | 85°C | -40°C | Non-RoHS Compliant | LQFP | Parallel | 200MHz | RAM, SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24LC128T-E/MS | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tape & Reel (TR) | 2010 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 3mm | ROHS3 Compliant | Tin | 8 | 1000000 ERASE/WRITE CYCLES, HARDWARE WRITE PROTECT, DATA RETENTION > 200 YEARS | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | I2C, Serial | 128 kb | 3mm | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 1.1mm | 1 | 3mA | e3 | DUAL | 260 | 4.5V | 40 | 24LC128 | 8 | YES | 0.65mm | 2.5V | Not Qualified | 3/5V | 5.5V | 900ns | 128Kb 16K x 8 | Non-Volatile | 2.5V~5.5V | 8 | 400kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||
 |
IS64WV20488BLL-10CTLA3 | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Tube | Active | 3 (168 Hours) | 44 | 18.41mm | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | 10.16mm | Surface Mount | -40°C~125°C TA | SRAM - Asynchronous | 1.2mm | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 0.8mm | R-PDSO-G44 | 2.4V | 3.6V | 16Mb 2M x 8 | Volatile | 2.4V~3.6V | 2MX8 | 8 | 16777216 bit | 10 ns | SRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V05L15PFG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | 2009 | yes | Active | 3 (168 Hours) | 64 | EAR99 | 70°C | 0°C | 3.3V | 2 | 14mm | RoHS Compliant | Lead Free | No | 64 | TQFP | Parallel | 3.6V | 3V | 64 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 64 | COMMERCIAL | YES | 0.8mm | SRAMs | 3-STATE | 15 ns | 8kB | RAM, SDR, SRAM | 26b | 0.185mA | 8KX8 | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT6116SA25SOI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 24-SOIC (0.295, 7.50mm Width) | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | IDT6116 | 24-SOIC | 25ns | 16Kb 2K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT53E384M32D2DS-046 WT:E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 200-WFBGA | Surface Mount | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 12Gb 384M x 32 | Volatile | 0.6V 1.1V | 2.133GHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "7133LA55PFI8") |
7133LA55PFI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | 32Kb 2K x 16 | Volatile | 4.5V~5.5V | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24LC64-E/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tube | 2007 | yes | Active | 3 (168 Hours) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 8-SOIC (0.154, 3.90mm Width) | I2C, Serial | No SVHC | 64 kb | 1.5mm | 3.9mm | Surface Mount | -40°C~125°C TA | CMOS | 1 | 3mA | e3 | DUAL | 260 | 5V | 40 | 24LC64 | 8 | 1.27mm | 2.5V | 3/5V | 5.5V | 900ns | 64Kb 8K x 8 | Non-Volatile | 2.5V~5.5V | 400kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||
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MT25QL128ABB1ESE-0AUT TR | Micron Technology Inc. | 5.3094 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | Automotive, AEC-Q100 | Active | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | Surface Mount | -40°C~125°C TA | FLASH - NOR | 128Mb 16M x 8 | Non-Volatile | 2.7V~3.6V | 133MHz | FLASH | SPI | 1.8ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C131-15JC | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | no | Obsolete | 3 (168 Hours) | 52 | 19.1262mm | Non-RoHS Compliant | INTERRUPT FLAG | 52-LCC (J-Lead) | unknown | 19.1262mm | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | 5.08mm | 1 | e0 | TIN LEAD | QUAD | 220 | 5V | 30 | 52 | YES | 1.27mm | S-PQCC-J52 | 4.5V | COMMERCIAL | 5.5V | 8Kb 1K x 8 | Volatile | 4.5V~5.5V | 1KX8 | 8 | 8192 bit | 15 ns | SRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42S81600E-6TL-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | 70°C | 0°C | 3.3V | RoHS Compliant | 54 | 54-TSOP (0.400, 10.16mm Width) | Parallel | 3.6V | 3V | 128 Mb | 166MHz | Surface Mount | 0°C~70°C TA | SDRAM | 150mA | 166MHz | 54-TSOP II | 5.4ns | 128Mb 16M x 8 | Volatile | 14b | 3V~3.6V | 8b | 166MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FL129P0XMFI003 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tape & Reel (TR) | FL-P | Obsolete | 3 (168 Hours) | 16 | 3A991.B.1.A | 10.3mm | ROHS3 Compliant | No | 16 | 16-SOIC (0.295, 7.50mm Width) | SPI, Serial | 128 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | 2.65mm | 8542.32.00.51 | 1 | 38mA | e3 | Matte Tin (Sn) | DUAL | 3V | 1.27mm | 2.7V | 3/3.3V | 3.6V | 1.5 ms | 128Mb 16M x 8 | Non-Volatile | 1b | 2.7V~3.6V | 128MX1 | 1 | Synchronous | 8b | 104MHz | 0.00001A | 1b | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 50ms | 3V | 256B | SPI | FLASH | SPI - Quad I/O | 5μs, 3ms | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V631S15BC | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tray | Active | 4 (72 Hours) | Non-RoHS Compliant | 256-LBGA | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT70V631 | 256-CABGA (17x17) | 15ns | 4.5Mb 256K x 18 | Volatile | 3.15V~3.45V | SRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V256SA20Y8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2010 | 3 (168 Hours) | 28 | EAR99 | 70°C | 0°C | 1 | 17.9324mm | Non-RoHS Compliant | 28 | Parallel | not_compliant | 7.5184mm | CMOS | 3.556mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | DUAL | J BEND | 225 | 3.3V | 30 | 28 | COMMERCIAL | YES | 1.27mm | 3V | SRAMs | Not Qualified | 3.3V | 3.6V | 3-STATE | RAM, SRAM - Asynchronous | 0.085mA | 32KX8 | 8 | 262144 bit | 0.002A | 20 ns | YES | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71P79804S250BQG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2008 | 70°C | 0°C | RoHS Compliant | 165 | Parallel | 250MHz | DDR, RAM, SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS49NLS93200-25B | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | 144 | EAR99 | 1 | 18.5mm | Non-RoHS Compliant | 144 | AUTO REFRESH | 144-TFBGA | Surface Mount | 0°C~70°C TA | CMOS | SYNCHRONOUS | 1.2mm | 8542.32.00.28 | 1 | 400MHz | BOTTOM | 1.8V | 144 | YES | 1mm | 1.7V | Not Qualified | 1.5/1.81.82.5V | 1.9V | 3-STATE | 20ns | 288Mb 32M x 9 | Volatile | 0.97mA | 1.7V~1.9V | 32MX9 | 9 | 301989888 bit | 9b | 0.048A | SEPARATE | DRAM | Parallel | 248 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MTFC8GACAENS-5M AIT TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 153-TFBGA | Surface Mount | -40°C~85°C TA | FLASH - NAND | 64Gb 8G x 8 | Non-Volatile | 2.7V~3.6V | FLASH | MMC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IS61LV6416-10TL | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tray | yes | Active | 3 (168 Hours) | 44 | 3A991.B.2.B | 18.415mm | ROHS3 Compliant | Lead Free | 44 | 44-TSOP (0.400, 10.16mm Width) | 10.16mm | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | 1.2mm | 8542.32.00.41 | 1 | e3 | Matte Tin (Sn) - annealed | DUAL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 44 | YES | 0.8mm | 3.135V | Not Qualified | 3.3V | 3.63V | 3-STATE | 1Mb 64K x 16 | Volatile | 0.12mA | 3.135V~3.6V | 64KX16 | 16 | 1048576 bit | 0.005A | 10 ns | COMMON | 3.14V | SRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
93LC66BT-I/OT | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | yes | Active | 1 (Unlimited) | 6 | SMD/SMT | 3.1mm | ROHS3 Compliant | Lead Free | No | 6 | SOT-23-6 | Serial | No SVHC | 4 kb | 1.3mm | 1.8mm | Surface Mount | -40°C~85°C TA | CMOS | 1 | 2mA | e3 | Matte Tin (Sn) | DUAL | 260 | 3V | 40 | 93LC66B | 6 | 0.95mm | 2.5V | 3/5V | 5.5V | 250 ns | 4Kb 256 x 16 | Non-Volatile | 2.5V~5.5V | 2MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | SOFTWARE | MICROWIRE | EEPROM | SPI | 6ms | ||||||||||||||||||||||||||||||||||||||||||||||||||
|
IS61LV6416-10TLI-TR | ISSI, Integrated Silicon Solution Inc | 2.2306 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tape & Reel (TR) | Active | 2 (1 Year) | 85°C | -40°C | 3.3V | 1 | ROHS3 Compliant | No | 44 | 44-TSOP (0.400, 10.16mm Width) | Parallel | 3.63V | 3.135V | 1 Mb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 130mA | 44-TSOP II | 10ns | 1Mb 64K x 16 | Volatile | 16b | 3.135V~3.6V | Asynchronous | 16b | SRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS62WV25616EBLL-45TLI | ISSI, Integrated Silicon Solution Inc | 2.8317 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | Active | 3 (168 Hours) | 44 | 18.41mm | ROHS3 Compliant | 44 | 44-TSOP (0.400, 10.16mm Width) | 10.16mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1.2mm | 8542.32.00.41 | 1 | e3 | Matte Tin (Sn) | DUAL | 260 | 3V | 10 | YES | 0.8mm | 2.2V | 3.6V | 4Mb 256K x 16 | Volatile | 2.2V~3.6V | 256KX16 | 16 | 4194304 bit | 45 ns | SRAM | Parallel | 45ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT53D512M64D4SB-046 XT ES:E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | -30°C~105°C TC | SDRAM - Mobile LPDDR4 | 32Gb 512M x 64 | Volatile | 1.1V | 2133MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43TR16256AL-15HBL-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Surface Mount | Tape & Reel (TR) | Active | 3 (168 Hours) | 1.35V | ROHS3 Compliant | 96 | 96-TFBGA | 4 Gb | Surface Mount | 0°C~95°C TC | SDRAM - DDR3L | 240mA | 180mA | 20ns | 4Gb 256M x 16 | Volatile | 18b | 1.283V~1.45V | 16b | 667MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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70V09L20PFGI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | IDT70V09 | 1Mb 128K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 20ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CAT24C02HU4IGT3A | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 5 | 2.9mm | ROHS3 Compliant | 8-UFDFN Exposed Pad | 1.6mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1mm | 1 | e3 | MATTE TIN | DUAL | 5V | 5 | YES | 0.95mm | R-PDSO-G5 | 1.7V | 5.5V | 900ns | 2Kb 256 x 8 | Non-Volatile | 1.7V~5.5V | 16X16 | 16 | 256 bit | SERIAL | 400kHz | 5ms | I2C | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29GL512S11TFB010 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Tray | 2015 | Automotive, AEC-Q100, GL-S | Active | 3 (168 Hours) | 56 | 18.4mm | ROHS3 Compliant | 56-TFSOP (0.724, 18.40mm Width) | 14mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | ASYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 0.5mm | R-PDSO-G56 | 2.7V | 3.6V | 110ns | 512Mb 32M x 16 | Non-Volatile | 2.7V~3.6V | 64MX8 | 8 | 536870912 bit | 3V | FLASH | Parallel | 60ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7134SA70JI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 52-LCC (J-Lead) | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | 32Kb 4K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S34ML01G200TFV003 | SkyHigh Memory Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | 48 | 18.4mm | RoHS Compliant | 12mm | CMOS | ASYNCHRONOUS | 1.2mm | 1 | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | 3.3V | NOT SPECIFIED | INDUSTRIAL | YES | 0.5mm | R-PDSO-G48 | 2.7V | 105°C | -40°C | 3.6V | 128MX8 | 8 | 1073741824 bit | FLASH | PARALLEL | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT49BV001ANT-55TU | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 1997 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 32-TFSOP (0.724, 18.40mm Width) | Surface Mount | -40°C~85°C TC | AT49BV001 | 55ns | 1Mb 128K x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 50μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C185-15VI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | 1996 | no | Obsolete | 3 (168 Hours) | 28 | EAR99 | 5V | 1 | Non-RoHS Compliant | Contains Lead | No | 28 | 28-BSOJ (0.300, 7.62mm Width) | 64 kb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 3.556mm | 1 | 130mA | e0 | Tin/Lead (Sn/Pb) | DUAL | 220 | 5V | CY7C185 | 28 | 5V | 5V | 3-STATE | 64Kb 8K x 8 | Volatile | 13b | 4.5V~5.5V | 8KX8 | 8 | Asynchronous | 8b | YES | COMMON | SRAM | Parallel | 15ns |
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24LC128T-E/MS Microchip Technology
3/5V V 8 Pin Memory IC 24LC128 128 kb kb 3mm mm 3mA mA
Price: 0.0000
RFQ -
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24LC64-E/SN Microchip Technology
3/5V V Surface Mount 8 Pin Memory IC 24LC64 64 kb kb 4.9mm mm 3mA mA
Price: 0.0000
RFQ -
MT25QL128ABB1ESE-0AUT TR Micron Technology Inc.
Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
Price: 5.3094
RFQ -
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IS42S81600E-6TL-TR ISSI, Integrated Silicon Solution Inc
Surface Mount Memory IC 128 Mb kb 150mA mA
Price: 0.0000
RFQ -
S25FL129P0XMFI003 Cypress Semiconductor Corp
3/3.3V V Surface Mount FL-P Memory IC FL-P Series 128 Mb kb 10.3mm mm 38mA mA 1b b
Price: 0.0000
RFQ -
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IDT71V256SA20Y8 Integrated Device Technology (IDT)
3.3V V 28 Pin Memory IC 17.9324mm mm
Price: 0.0000
RFQ -
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