Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Ambient Temperature Range High | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Output Enable | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Common Flash Interface | Serial Bus Type | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
.png "MT29C8G96MAYBADJV-5 WT TR") |
MT29C8G96MAYBADJV-5 WT TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2012 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 168-VFBGA | Surface Mount | -25°C~85°C TA | FLASH - NAND, Mobile LPDRAM | MT29C8G96 | 8Gb 1G x 8 N 4Gb 128M x 32 LPDRAM | Non-Volatile | 1.7V~1.95V | 200MHz | FLASH, RAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M95512-DRDW6TP | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Tape & Reel (TR) | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.4mm | ROHS3 Compliant | No | 8 | 8-TSSOP (0.173, 4.40mm Width) | SPI, Serial | 512 kb | 3mm | Surface Mount | -40°C~85°C TA | CMOS | 1.2mm | 1 | DUAL | 2.5V | M95512 | 8 | YES | 0.65mm | 2/5V | 5.5V | 80 ns | 512Kb 64K x 8 | Non-Volatile | 1.8V~5.5V | 8 | 16MHz | 0.000005A | 40 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | SPI | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V65602S100PFGI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V65602 | 100-TQFP (14x14) | 5ns | 9Mb 256K x 36 | Volatile | 3.135V~3.465V | 100MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MX25L1606EPI-12G | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | MX25xxx05/06 | Obsolete | 1 (Unlimited) | 8 | EAR99 | 9.27mm | RoHS Compliant | 8-DIP (0.300, 7.62mm) | 7.62mm | Through Hole | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 5.33mm | 8542.32.00.51 | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | 8 | NO | 2.54mm | R-PDIP-T8 | 2.7V | Not Qualified | 3/3.3V | 3.6V | 16Mb 2M x 8 | Non-Volatile | 0.025mA | 2.7V~3.6V | 8MX2 | 2 | 16777216 bit | SERIAL | 86MHz | 0.00002A | 1 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 2.7V | SPI | FLASH | SPI | 50μs, 3ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FL132K0XMFI010 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 11 Weeks | Tray | 2013 | FL1-K | Obsolete | 3 (168 Hours) | 8 | 5.283mm | ROHS3 Compliant | No | ALSO CONFIGURABLE AS 32M X 1 | 8-SOIC (0.209, 5.30mm Width) | SPI, Serial | 32 Mb | 5.283mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | 2.159mm | 8542.32.00.51 | 1 | e3 | Matte Tin (Sn) | DUAL | 3V | YES | 1.27mm | S-PDSO-G8 | 2.7V | 3/3.3V | 3.6V | 32Mb 4M x 8 | Non-Volatile | 0.025mA | 2.7V~3.6V | 8MX4 | 4 | 108MHz | 0.000005A | 2 | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 3V | 256B | SPI | FLASH | SPI - Quad I/O | 3ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S29CL016J1JQFM010U | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | Obsolete | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
CG8558AAT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Obsolete | Vendor Undefined | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FL256LAGNFV010 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | 2016 | FL-L | Active | 3 (168 Hours) | 8 | 8mm | ROHS3 Compliant | IT ALSO HAVE MEMORY WIDTH X 1 | 8-WDFN Exposed Pad | SPI | 800μm | 6mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 8542.32.00.51 | 1 | DUAL | 3V | YES | 1.27mm | R-PDSO-N8 | 2.7V | 3.6V | 105°C | 8 ns | 256Mb 32M x 8 | Non-Volatile | 2.7V~3.6V | 64MX4 | 4 | 268435456 bit | SERIAL | 133MHz | 2 | 3V | FLASH | SPI - Quad I/O, QPI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT49F040A-55PI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1997 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 32-DIP (0.600, 15.24mm) | Through Hole | -40°C~85°C TC | AT49F040 | 55ns | 4Mb 512K x 8 | Non-Volatile | 4.5V~5.5V | FLASH | Parallel | 40μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V416VS10PHI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2005 | 85°C | -40°C | Non-RoHS Compliant | TSOP | Parallel | RAM, SRAM - Asynchronous | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT53E2G32D4DT-046 AAT:A TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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7005L35J8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 68-LCC (J-Lead) | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7005 | 64Kb 8K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 35ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V24S55PF8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT70V24 | 64Kb 4K x 16 | Volatile | 3V~3.6V | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V35761SA183BGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 119 | 85°C | -40°C | 3.3V | 1 | 14mm | RoHS Compliant | Contains Lead | No | 119 | PIPELINED ARCHITECTURE | BGA | Parallel | 3.465V | 3.135V | 4.5 Mb | 183MHz | 22mm | 2.15mm | CMOS | 2.36mm | 1 | 350mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 119 | INDUSTRIAL | SRAMs | 3-STATE | 3.3 ns | 183MHz | 512kB | RAM, SDR, SRAM | 17b | Synchronous | 0.035A | 36b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7005S25PFI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 64-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | 64Kb 8K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7006L20PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tape & Reel | 2008 | no | Active | 3 (168 Hours) | 64 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 64 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | TQFP | Parallel | 5.5V | 4.5V | 128 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 64 | COMMERCIAL | YES | 0.8mm | SRAMs | 5V | 3-STATE | 20 ns | 16kB | RAM, SDR, SRAM | 28b | 16KX8 | 0.0015A | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V30L55TF8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 64-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT71V30 | 64-TQFP (10x10) | 55ns | 8Kb 1K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
25AA040A-I/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 18 Weeks | Through Hole | Tube | 2007 | yes | Active | Not Applicable | 8 | Through Hole | EAR99 | 5V | 10.16mm | ROHS3 Compliant | Lead Free | No | 8 | DATA RETENTION > 200 YEARS; 1,000,000 ERASE/WRITE CYCLES | 8-DIP (0.300, 7.62mm) | SPI, Serial | No SVHC | 4 kb | 4.953mm | 7.112mm | Through Hole | -40°C~85°C TA | CMOS | 1 | 5mA | e3 | Matte Tin (Sn) | DUAL | 2.5V | 25AA040A | 8 | 2.54mm | 160 ns | 4Kb 512 x 8 | Non-Volatile | 1.8V~5.5V | 10MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | SPI | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS45S32400F-7BLA2 | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tray | Active | 3 (168 Hours) | 90 | EAR99 | 1 | 13mm | ROHS3 Compliant | 90 | AUTO/SELF REFRESH | 90-TFBGA | Surface Mount | -40°C~105°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 8542.32.00.02 | 1 | BOTTOM | 3.3V | 90 | YES | 0.8mm | 3V | Not Qualified | 3.3V | 3.6V | 3-STATE | 5.4ns | AEC-Q100 | 128Mb 4M x 32 | Volatile | 0.16mA | 3V~3.6V | 4MX32 | 32 | 134217728 bit | 32b | 143MHz | 0.002A | COMMON | 4096 | DRAM | Parallel | 1248FP | 1248 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS42S32160C-6BLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tray | yes | Obsolete | 3 (168 Hours) | 90 | EAR99 | 3.3V | 1 | 13mm | RoHS Compliant | No | 90 | AUTO/SELF REFRESH | 90-LFBGA | 512 Mb | Surface Mount | -40°C~85°C TA | SDRAM | 1.4mm | 8542.32.00.28 | 1 | 300mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3.3V | 40 | 90 | 0.8mm | 3V | 3.6V | 3-STATE | 5.4ns | 512Mb 16M x 32 | Volatile | 15b | 3V~3.6V | 16MX32 | 32 | 32b | 166MHz | 0.004A | COMMON | 8192 | DRAM | Parallel | 1248FP | 1248 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
25AA640AT-E/ST | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tape & Reel (TR) | 2012 | Active | 1 (Unlimited) | ROHS3 Compliant | No | 8 | 8-TSSOP (0.173, 4.40mm Width) | SPI, Serial | 64 kb | Surface Mount | -40°C~125°C TA | e3 | Matte Tin (Sn) - annealed | 260 | 40 | 25AA640A | 100 ns | 64Kb 8K x 8 | Non-Volatile | 1.8V~5.5V | 10MHz | SPI | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT53D512M64D4NZ-046 WT ES:E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 376-WFBGA | Surface Mount | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 32Gb 512M x 64 | Volatile | 1.1V | 2133MHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42SM16160K-75BLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Surface Mount | Tape & Reel (TR) | Active | 3 (168 Hours) | 3.3V | ROHS3 Compliant | 54 | 54-TFBGA | 256 Mb | Surface Mount | -40°C~85°C TA | SDRAM - Mobile | 100mA | 6ns | 256Mb 16M x 16 | Volatile | 15b | 2.7V~3.6V | 16b | 133MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT45W1MW16BDGB-701 WT TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2006 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 54-VFBGA | Surface Mount | -30°C~85°C TC | PSRAM (Pseudo SRAM) | MT45W1MW16 | 16Mb 1M x 16 | Volatile | 1.7V~1.95V | PSRAM | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MX25L51245GZ2I-10G | Macronix | 9.0150 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Tray | 2016 | MXSMIO™ | Not For New Designs | 3 (168 Hours) | 8 | 8mm | ROHS3 Compliant | Lead Free | CAN BE ORGNISED AS 512 MBIT X 1 | 8-WDFN Exposed Pad | 6mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 0.8mm | 1 | e3 | Tin (Sn) | DUAL | 260 | 3V | 40 | 8 | YES | 1.27mm | R-PDSO-N8 | 2.7V | 3.6V | 512Mb 64M x 8 | Non-Volatile | 2.7V~3.6V | 128MX4 | 4 | 536870912 bit | SERIAL | 166MHz | 2 | 2.7V | FLASH | SPI | 60μs, 750μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT28HC256F-90UM/883 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 23 Weeks | Through Hole | Tray | 1997 | no | Active | 1 (Unlimited) | 28 | 5V | 16.51mm | Non-RoHS Compliant | Contains Lead | Lead, Tin | 28 | AUTOMATIC WRITE | 28-BCPGA | Parallel, SPI | 256 kb | 90GHz | 13.97mm | Through Hole | -55°C~125°C TC | CMOS | ASYNCHRONOUS | 4.4mm | 1 | 80mA | e0 | Tin/Lead (Sn/Pb) | PERPENDICULAR | 240 | 5V | 30 | AT28HC256 | 2.54mm | Not Qualified | 5V | 3-STATE | 90ns | MIL-STD-883 Class C | 256Kb 32K x 8 | Non-Volatile | 4.5V~5.5V | 32KX8 | 8 | 0.0003A | 10000 Write/Erase Cycles | 3ms | 5V | YES | YES | 64words | EEPROM | Parallel | 3ms | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V3558S100PFGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | Tape & Reel | 2006 | yes | Active | 3 (168 Hours) | 100 | 85°C | -40°C | 3.3V | 1 | 20mm | RoHS Compliant | Lead Free | No | 100 | TQFP | Parallel | 3.465V | 3.135V | 4.5 Mb | 100MHz | 14mm | 1.4mm | CMOS | 1 | 255mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | INDUSTRIAL | 0.65mm | SRAMs | 3-STATE | 5 ns | 100MHz | 512kB | RAM, SDR, SRAM | 18b | Synchronous | 0.045A | 18b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MX29LV040CQC-70G | Macronix | 2.7959 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Tube | 2004 | MX29LV | yes | Not For New Designs | 3 (168 Hours) | 32 | 3A991.B.1.A | 3.6V | 14.05mm | ROHS3 Compliant | Lead Free | 32 | 32-LCC (J-Lead) | unknown | 4 Mb | 11.43mm | Surface Mount | 0°C~70°C TA | FLASH - NOR | ASYNCHRONOUS | 3.55mm | 1 | e3 | Matte Tin (Sn) | QUAD | 260 | 3V | 40 | 32 | YES | 1.27mm | 2.7V | Not Qualified | 3/3.3V | 4Mb 512K x 8 | Non-Volatile | 0.03mA | 2.7V~3.6V | 512KX8 | 8 | 0.000005A | 70 ns | 3V | YES | YES | YES | 8 | YES | FLASH | Parallel | 70ns | 64K | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V256SA15PZ8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2009 | 3 (168 Hours) | 28 | EAR99 | 70°C | 0°C | 1 | 11.8mm | Non-RoHS Compliant | TSSOP | Parallel | not_compliant | 8mm | CMOS | 1.2mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | DUAL | GULL WING | 240 | 3.3V | 20 | 28 | COMMERCIAL | YES | 0.55mm | R-PDSO-G28 | 3V | SRAMs | Not Qualified | 3.3V | 3.6V | 3-STATE | RAM, SRAM - Asynchronous | 0.085mA | 32KX8 | 8 | 262144 bit | 0.002A | 15 ns | YES | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71P79804S267BQ | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2008 | 3 (168 Hours) | 165 | 3A991.B.2.A | 70°C | 0°C | 15mm | RoHS Compliant | 165 | FBGA | Parallel | 267MHz | 13mm | CMOS | SYNCHRONOUS | 1.2mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 1.8V | 20 | 165 | COMMERCIAL | YES | 1mm | 1.7V | SRAMs | Not Qualified | 1.5/1.81.8V | 1.9V | 3-STATE | DDR, RAM, SRAM | 0.95mA | 1MX18 | 18 | 18874368 bit | 0.42A | 0.45 ns | SEPARATE | 1.7V |
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M95512-DRDW6TP STMicroelectronics
2/5V V 8 Pin Memory IC M95512 512 kb kb 4.4mm mm
Price: 0.0000
RFQ -
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MX25L1606EPI-12G Macronix
3/3.3V V MX25xxx05/06 8 Pin Memory IC MX25xxx05/06 Series 9.27mm mm
Price: 0.0000
RFQ -
S25FL132K0XMFI010 Cypress Semiconductor Corp
3/3.3V V FL1-K Memory IC FL1-K Series 32 Mb kb 5.283mm mm
Price: 0.0000
RFQ -
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71V35761SA183BGI8 Integrated Device Technology (IDT)
Surface Mount 119 Pin Memory IC 4.5 Mb kb 14mm mm 350mA mA 36b b
Price: 0.0000
RFQ -
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7006L20PF8 Integrated Device Technology (IDT)
5V V 64 Pin Memory IC 128 kb kb 14mm mm
Price: 0.0000
RFQ -
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