Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Refresh Cycles | Access Mode | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
.png "MT42L256M64D4EV-25 WT:A") |
MT42L256M64D4EV-25 WT:A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | 253 | 1 | 11mm | ROHS3 Compliant | SELF REFRESH; IT ALSO REQUIRES 1.2V NOM | 253-TFBGA | 11mm | Surface Mount | -30°C~85°C TC | SDRAM - Mobile LPDDR2 | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | 1.8V | MT42L256M64 | YES | 0.5mm | S-PBGA-B253 | 1.7V | Not Qualified | 1.21.8V | 1.95V | 3-STATE | 16Gb 256M x 64 | Volatile | 0.194mA | 1.14V~1.3V | 256MX64 | 64 | 17179869184 bit | 400MHz | 0.002A | 5.5 ns | COMMON | 8192 | MULTI BANK PAGE BURST | DRAM | Parallel | 4816 | 4816 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT28HC256E-90SI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tube | 2016 | Obsolete | 2 (1 Year) | Non-RoHS Compliant | 28-SOIC (0.295, 7.50mm Width) | Surface Mount | -40°C~85°C TC | AT28HC256 | 90ns | 256Kb 32K x 8 | Non-Volatile | 4.5V~5.5V | EEPROM | Parallel | 10ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24LCS52/ST | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tube | 2003 | yes | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 8 | 1000K ERASE/WRITE CYCLES; HARDWARE WRITE PROTECT; DATA RETENTION > 200 YEARS | 8-TSSOP (0.173, 4.40mm Width) | I2C, Serial | 2 kb | Surface Mount | 0°C~70°C TA | CMOS | 1 | 3mA | e3 | DUAL | 260 | 2.5V | 40 | 24LCS52 | 8 | 0.635mm | 2.2V | 3/5V | 5.5V | 900ns | 2Kb 256 x 8 | Non-Volatile | 2.2V~5.5V | 8 | 400kHz | 0.00003A | 200 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 10ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT28C64-25JI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1995 | Obsolete | 2 (1 Year) | Non-RoHS Compliant | 32-LCC (J-Lead) | Surface Mount | -40°C~85°C TC | AT28C64 | 250ns | 64Kb 8K x 8 | Non-Volatile | 4.5V~5.5V | EEPROM | Parallel | 1ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V3589S166BFG8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 17 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 208-LFBGA | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Synchronous | IDT70V3589 | 3.6ns | 2Mb 64K x 36 | Volatile | 3.15V~3.45V | 166MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7130LA25TFI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2005 | Active | 85°C | -40°C | 5V | 2 | 10mm | RoHS Compliant | Contains Lead | No | 64 | TQFP | Parallel | 5.5V | 4.5V | 8 kb | 10mm | 1.4mm | 220mA | 25 ns | 1kB | RAM, SDR, SRAM | 20b | Asynchronous | 8b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V3558S133BGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2007 | 3 (168 Hours) | 119 | 3A991.B.2.A | 85°C | -40°C | 22mm | Non-RoHS Compliant | BGA | Parallel | not_compliant | 133MHz | 14mm | CMOS | SYNCHRONOUS | 2.36mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 119 | INDUSTRIAL | YES | 1.27mm | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.31mA | 256KX18 | 18 | 4718592 bit | 0.045A | 4.2 ns | COMMON | 3.14V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
M29W128GL70ZA6F TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2015 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 64-TBGA | Surface Mount | -40°C~85°C TA | FLASH - NOR | M29W128 | 128Mb 16M x 8 8M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29GL512S11TFA020 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Tray | 2016 | GL-S | Active | 3 (168 Hours) | 56 | 18.4mm | ROHS3 Compliant | 56-TFSOP (0.724, 18.40mm Width) | 14mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | ASYNCHRONOUS | 1.2mm | 1 | DUAL | 3V | YES | 0.5mm | R-PDSO-G56 | 2.7V | 3.6V | 110ns | AEC-Q100 | 512Mb 32M x 16 | Non-Volatile | 0.08mA | 2.7V~3.6V | 32MX16 | 16 | 536870912 bit | 0.0001A | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 3V | YES | YES | YES | 512 | 16words | YES | YES | FLASH | Parallel | 60ns | 64K | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT41K64M16TW-107 AIT:J | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Bulk | 2015 | Automotive, AEC-Q100 | Active | 3 (168 Hours) | 96 | EAR99 | 1 | 14mm | ROHS3 Compliant | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 96-TFBGA | 8mm | Surface Mount | -40°C~95°C TC | SDRAM - DDR3L | SYNCHRONOUS | 1.2mm | 8542.32.00.32 | 1 | e1 | TIN SILVER COPPER | BOTTOM | 260 | 1.35V | 30 | YES | 0.8mm | R-PBGA-B96 | 1.283V | 1.45V | 20ns | 1Gb 64M x 16 | Volatile | 1.283V~1.45V | 64MX16 | 16 | 1073741824 bit | 933MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1049G-10ZSXIT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 44 | 3A991.B.2.A | 18.415mm | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | 10.16mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1.194mm | 8542.31.00.01 | 1 | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | YES | 0.8mm | R-PDSO-G44 | 4.5V | 5.5V | 4Mb 512K x 8 | Volatile | 4.5V~5.5V | 512KX8 | 8 | 4194304 bit | 10 ns | SRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
NP8P128A13T1760E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2012 | Omneo™ | Obsolete | 3 (168 Hours) | 64 | 10mm | ROHS3 Compliant | No | 64 | 64-TBGA | Parallel, SPI | 128 Mb | Surface Mount | 0°C~70°C TC | PCM (PRAM) | 1.2mm | 8542.32.00.71 | 1 | BOTTOM | 3V | NP8P128A | 64 | 1mm | 2.7V | 3.6V | 128Mb 16M x 8 | Non-Volatile | 2.7V~3.6V | 16MX8 | 8 | 8b | 8b | PCM (PRAM) | Parallel, SPI | 115ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT28C010-15LM/883 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | 1998 | Active | 1 (Unlimited) | 44 | 3A001.A.2.C | 5V | 16.55mm | Non-RoHS Compliant | Contains Lead | Lead, Tin | 44 | AUTOMATIC WRITE; DATA RETENTION: 10 YEARS | 44-CLCC | not_compliant | 1 Mb | 150GHz | 16.55mm | Surface Mount | -55°C~125°C TC | CMOS | ASYNCHRONOUS | 2.74mm | 8542.32.00.51 | 1 | 80mA | e0 | Tin/Lead (Sn/Pb) | QUAD | NOT SPECIFIED | 5V | NOT SPECIFIED | AT28C010 | 1.27mm | Not Qualified | 5V | 3-STATE | 150ns | MIL-STD-883 | 1Mb 128K x 8 | Non-Volatile | 4.5V~5.5V | 128KX8 | 8 | 0.0003A | 10000 Write/Erase Cycles | 10ms | 5V | YES | YES | NO | 128words | EEPROM | Parallel | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||
 |
AT24C08D-STUM-T | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 9 Weeks | Surface Mount | Tape & Reel (TR) | 1997 | yes | Active | 1 (Unlimited) | 5 | 2.9mm | ROHS3 Compliant | Tin | SOT-23-5 Thin, TSOT-23-5 | 2-Wire, I2C, Serial | 8 kb | 1.6mm | Surface Mount | -40°C~85°C TC | CMOS | SYNCHRONOUS | 1mm | 1 | e3 | DUAL | 260 | 1.8V | 40 | AT24C08 | 0.95mm | R-PDSO-G5 | 1.7V | 3.6V | 4.5μs | 8Kb 1K x 8 | Non-Volatile | 1.7V~3.6V | 1KX8 | 8 | 1MHz | 5ms | I2C | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
M29W640GH70ZF6F TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2015 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 64-TBGA | Surface Mount | -40°C~85°C TA | FLASH - NOR | M29W640 | 64Mb 8M x 8 4M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V256SA20PZ | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 28-TSSOP (0.465, 11.80mm Width) | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT71V256 | 28-TSOP | 20ns | 256Kb 32K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 20ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT45W2MW16PAFA-70 WT | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Box | 2005 | no | Discontinued | 2 (1 Year) | 48 | 3A991.B.2.A | 8mm | Non-RoHS Compliant | 48-VFBGA | not_compliant | 6mm | Surface Mount | -30°C~85°C TC | PSRAM (Pseudo SRAM) | ASYNCHRONOUS | 1mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 235 | 1.8V | 30 | MT45W2MW16 | 48 | YES | 0.75mm | R-PBGA-B48 | 1.7V | Other Memory ICs | Not Qualified | 1.81.8/3V | 1.95V | 3-STATE | 32Mb 2M x 16 | Volatile | 0.02mA | 1.7V~1.95V | 2MX16 | 16 | 33554432 bit | 0.00011A | 70 ns | COMMON | PSRAM | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
AT28BV64-30JC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1998 | Obsolete | 2 (1 Year) | Non-RoHS Compliant | 32-LCC (J-Lead) | Surface Mount | 0°C~70°C TC | EEPROM | AT28BV64 | 32-PLCC (13.97x11.43) | 300ns | 64Kb 8K x 8 | Non-Volatile | 2.7V~3.6V | EEPROM | Parallel | 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V3559S85PFG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2009 | yes | Active | 3 (168 Hours) | 100 | 70°C | 0°C | 3.3V | 1 | 20mm | RoHS Compliant | Lead Free | No | 100 | FLOW-THROUGH ARCHITECHTURE | TQFP | Parallel | 3.465V | 3.135V | 4.5 Mb | 91MHz | 14mm | 1.4mm | CMOS | 1 | 225mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | COMMERCIAL | 0.65mm | SRAMs | 3-STATE | 8.5 ns | 100MHz | 512kB | RAM, SDR, SRAM | 18b | Synchronous | 0.04A | 18b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1268KV18-450BZXC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2003 | Obsolete | 3 (168 Hours) | 165 | 1.8V | 1 | ROHS3 Compliant | No | 165 | PIPELINED ARCHITECTURE | 165-LBGA | 36 Mb | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, DDR II+ | 1 | 600mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 1.8V | CY7C1268 | 165 | 3-STATE | 450 ps | 36Mb 2M x 18 | Volatile | 20b | 1.7V~1.9V | 18 | Synchronous | 450MHz | 0.33A | 18b | COMMON | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT29F8G08ABABAWP:B | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Surface Mount | Tray | 2012 | Obsolete | 3 (168 Hours) | 48 | 3.3V | 18.4mm | ROHS3 Compliant | Tin | No | 48 | 48-TFSOP (0.724, 18.40mm Width) | 8 Gb | Surface Mount | 0°C~70°C TA | FLASH - NAND | 1.2mm | 1 | DUAL | 3.3V | MT29F8G08 | 0.5mm | 2.7V | 3.6V | 8Gb 1G x 8 | Non-Volatile | 30b | 0.05mA | 2.7V~3.6V | 1GX8 | 8 | Asynchronous | 0.00005A | 25 ns | 8b | NO | NO | YES | 2K | 4kB | YES | FLASH | Parallel | 512K | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS4C16M16D1A-5TCNTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | 2015 | yes | Active | 3 (168 Hours) | ROHS3 Compliant | 66-TSSOP (0.400, 10.16mm Width) | unknown | Surface Mount | 0°C~70°C TA | SDRAM - DDR | NOT SPECIFIED | NOT SPECIFIED | 700ps | 256Mb 16M x 16 | Volatile | 2.3V~2.7V | 200MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR93H56RF-WCE2 | ROHM Semiconductor | 0.6832 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Cut Tape (CT) | 2013 | Automotive, AEC-Q100 | Active | 1 (Unlimited) | 8 | 5mm | ROHS3 Compliant | 8-SOIC (0.173, 4.40mm Width) | 4.4mm | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 1.71mm | 1 | DUAL | NOT SPECIFIED | 4V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-G8 | 2.7V | Not Qualified | 2/5V | 5.5V | 2Kb 128 x 16 | Non-Volatile | 0.0015mA | 2.7V~5.5V | 128X16 | 16 | 2048 bit | SERIAL | 1.25MHz | 0.000002A | 40 | 1000000 Write/Erase Cycles | SOFTWARE | 10ms | 3-WIRE | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42S32200C1-7B-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 2 (1 Year) | 70°C | 0°C | Non-RoHS Compliant | 90 | 90-LFBGA | Parallel | 3.6V | 3V | 143MHz | Surface Mount | 0°C~70°C TA | SDRAM | 143MHz | 90-BGA (13x8) | 5.5ns | 64Mb 2M x 32 | Volatile | 3.15V~3.45V | 32b | 143MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS62WV25616DBLL-45BLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Discontinued | 3 (168 Hours) | ROHS3 Compliant | 48 | 48-TFBGA | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 4Mb 256K x 16 | Volatile | 2.5V~3.6V | SRAM | Parallel | 45ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT47H64M8SH-25E AIT:H TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 60-TFBGA | Surface Mount | -40°C~95°C TC | SDRAM - DDR2 | MT47H64M8 | 400ps | 512Mb 64M x 8 | Volatile | 1.7V~1.9V | 400MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS41LV16105D-50KLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | 44 | 1 | 20.95mm | ROHS3 Compliant | AUTO REFRESH; RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 42-BSOJ (0.400, 10.16mm Width) | 10.16mm | Surface Mount | -40°C~85°C TA | DRAM - FP | ASYNCHRONOUS | 1.2mm | 1 | DUAL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | YES | 0.8mm | R-PDSO-G44 | 3V | 3.6V | 25ns | 16Mb 1M x 16 | Volatile | 3V~3.6V | 1MX16 | 16 | 16777216 bit | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS61WV25616EDBLL-10BLI | ISSI, Integrated Silicon Solution Inc | 5.7194 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tray | yes | Active | 3 (168 Hours) | 48 | 8mm | ROHS3 Compliant | 48 | 48-TFBGA | 6mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1.2mm | 1 | e3 | MATTE TIN | BOTTOM | 225 | 3V | NOT SPECIFIED | YES | 0.75mm | 2.4V | Not Qualified | 2.5/3.3V | 3.6V | 3-STATE | 4Mb 256K x 16 | Volatile | 0.035mA | 2.4V~3.6V | 1MX16 | 16 | 16777216 bit | 0.006A | 10 ns | COMMON | 2V | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61QDB24M18A-300B4LI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | Active | 3 (168 Hours) | 165 | 1.8V | 2 | 15mm | ROHS3 Compliant | 165 | PIPELINED ARCHITECTURE | 165-LBGA | 72 Mb | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, QUAD | 1.4mm | 1 | 1.05A | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | 165 | YES | 1mm | 1.71V | 1.89V | 1.48ns | 72Mb 4M x 18 | Volatile | 21b | 1.71V~1.89V | 4MX18 | 18 | Synchronous | 300MHz | 18b | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F256G08CMCABH2-12ITZ:A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Surface Mount | Tray | 2012 | yes | Obsolete | 1 (Unlimited) | 100 | 3A991.B.1.A | 3.3V | 18mm | RoHS Compliant | Copper, Silver, Tin | 100 | 100-TBGA | Parallel, Serial | 256 Gb | 12mm | Surface Mount | -40°C~85°C TA | FLASH - NAND | 1.2mm | 8542.32.00.51 | 1 | 50mA | e1 | TIN SILVER COPPER | BOTTOM | 260 | 3.3V | 30 | 100 | 1mm | 2.7V | 3.6V | 20 ns | 256Gb 32G x 8 | Non-Volatile | 2.7V~3.6V | 32GX8 | 8 | Asynchronous | 83MHz | 8b | 2.7V | 8kB | FLASH | Parallel |
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