Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IDT71V416VS10BEI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2005 | 85°C | -40°C | Non-RoHS Compliant | TFBGA | Parallel | RAM, SRAM - Asynchronous | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SST39VF1601C-70-4C-EKE | Microchip Technology | 2.4065 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tray | 2000 | SST39 MPF™ | yes | Active | 3 (168 Hours) | 48 | 3A991.B.1.A | 3.3V | 12.2mm | ROHS3 Compliant | Lead Free | Tin | No | 48 | BOTTOM BOOT BLOCK | 48-TFSOP (0.724, 18.40mm Width) | No SVHC | 16 Mb | 5MHz | 1.05mm | 18.5mm | Surface Mount | 0°C~70°C TA | CMOS | 18mA | 8542.32.00.51 | 1 | 18mA | e3 | DUAL | 260 | 3V | 40 | SST39VF1601C | 48 | YES | 0.5mm | 2.7V | 3.6V | 70ns | 16Mb 1M x 16 | Non-Volatile | 20b | 2.7V~3.6V | 1MX16 | Asynchronous | 16b | 0.00002A | 16b | 2.7V | YES | YES | YES | 12131 | YES | YES | FLASH | Parallel | 10μs | 8K4K16K32K | BOTTOM | |||||||||||||||||||||||||||||||||||||||||
 |
CY7C131-15JC | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | no | Obsolete | 3 (168 Hours) | 52 | 19.1262mm | Non-RoHS Compliant | INTERRUPT FLAG | 52-LCC (J-Lead) | unknown | 19.1262mm | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | 5.08mm | 1 | e0 | TIN LEAD | QUAD | 220 | 5V | 30 | 52 | YES | 1.27mm | S-PQCC-J52 | 4.5V | COMMERCIAL | 5.5V | 8Kb 1K x 8 | Volatile | 4.5V~5.5V | 1KX8 | 8 | 8192 bit | 15 ns | SRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS61WV1288EEBLL-10HLI | ISSI, Integrated Silicon Solution Inc | 4.1959 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tray | Active | 3 (168 Hours) | 32 | 11.8mm | ROHS3 Compliant | 32 | 32-TFSOP (0.465, 11.80mm Width) | 8mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 25mA | 1.25mm | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 0.5mm | 2.4V | 3.6V | 1Mb 128K x 8 | Volatile | 2.4V~3.6V | 128KX8 | 8 | 1048576 bit | 10 ns | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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25LC640-E/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tube | 2008 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 9.46mm | ROHS3 Compliant | Lead Free | No | 8 | 1000K ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS | 8-DIP (0.300, 7.62mm) | SPI, Serial | 64 kb | 7.62mm | Through Hole | -40°C~125°C TA | CMOS | 4.32mm | 1 | 5mA | e3 | Matte Tin (Sn) | DUAL | 5V | 25LC640 | 8 | NO | 2.54mm | 5V | 150 ns | 64Kb 8K x 8 | Non-Volatile | 2.5V~5.5V | 8 | 3MHz | 0.000001A | 200 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | SPI | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "S29AS016J70YEI119") |
S29AS016J70YEI119 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 20 Weeks | Bulk | 2012 | AS-J | Obsolete | 3 (168 Hours) | ROHS3 Compliant | Die | Surface Mount | -40°C~85°C TA | FLASH - NOR | 16Mb 2M x 8 1M x 16 | Non-Volatile | 1.65V~1.95V | FLASH | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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M29W512GH7AN6E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Bulk | 2013 | yes | Obsolete | 3 (168 Hours) | 56 | 3V | 18.4mm | ROHS3 Compliant | No | 56-TFSOP (0.724, 18.40mm Width) | 512 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.2mm | 1 | e3 | MATTE TIN | DUAL | 260 | 3V | 30 | YES | 0.5mm | R-PDSO-G56 | 2.7V | 3.6V | AEC-Q100 | 512Mb 64M x 8 32M x 16 | Non-Volatile | 24b | 2.7V~3.6V | 32MX16 | 16 | 80 ns | 8 | 2.7V | FLASH | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT46V32M8FG-6 L:G | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Box | 2007 | no | Discontinued | 2 (1 Year) | 60 | EAR99 | 1 | 14mm | Non-RoHS Compliant | AUTO/SELF REFRESH | 60-FBGA | not_compliant | 8mm | Surface Mount | 0°C~70°C TA | SDRAM - DDR | SYNCHRONOUS | 1.2mm | 8542.32.00.24 | 1 | e0 | TIN LEAD SILVER | BOTTOM | 235 | 2.5V | 30 | MT46V32M8 | 60 | YES | 1mm | R-PBGA-B60 | 2.3V | Not Qualified | 2.5V | 2.7V | 3-STATE | 700ps | 256Mb 32M x 8 | Volatile | 0.41mA | 2.3V~2.7V | 32MX8 | 8 | 268435456 bit | 167MHz | 0.004A | COMMON | 8192 | DRAM | Parallel | 15ns | 248 | 248 | ||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29C8G96MAZBBDJV-48 IT | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 11 Weeks | Bulk | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 168-VFBGA | Surface Mount | -40°C~85°C TA | FLASH - NAND, Mobile LPDRAM | NOT SPECIFIED | NOT SPECIFIED | 8Gb 512M x 16 N 4Gb 128M x 32 LPDRAM | Non-Volatile | 1.7V~1.9V | 208MHz | FLASH, RAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT27BV256-15TI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 1998 | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 28-TSSOP (0.465, 11.80mm Width) | Surface Mount | -40°C~85°C TC | EPROM - OTP | AT27BV256 | 28-TSOP | 150ns | 256Kb 32K x 8 | Non-Volatile | 2.7V~3.6V 4.5V~5.5V | EPROM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT7164L25YI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2009 | 3 (168 Hours) | 28 | EAR99 | 85°C | -40°C | 17.9324mm | Non-RoHS Compliant | 28 | Parallel | not_compliant | 7.5184mm | CMOS | 3.556mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | DUAL | J BEND | 225 | 5V | 30 | 28 | INDUSTRIAL | YES | 1.27mm | 4.5V | SRAMs | Not Qualified | 5V | 5.5V | 3-STATE | RAM, SRAM - Asynchronous | 0.15mA | 8KX8 | 8 | 65536 bit | 0.00006A | 25 ns | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V25761S200PF | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | IDT71V25761 | 5ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | 200MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT49H8M36SJ-TI:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 144-TFBGA | Surface Mount | 0°C~95°C TC | 288Mb 8M x 36 | Volatile | 1.7V~1.9V | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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EDB2432BCPA-8D-F-D | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tray | 2015 | Obsolete | 3 (168 Hours) | 85°C | -30°C | ROHS3 Compliant | 168 | 168-WFBGA | Parallel | 400MHz | Surface Mount | -30°C~85°C TC | SDRAM - Mobile LPDDR2 | 168-WFBGA (12x12) | 2Gb 64M x 32 | Volatile | 1.14V~1.95V | 400MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT71V3558S200BQI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 165-TBGA | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V3558 | 165-CABGA (13x15) | 3.2ns | 4.5Mb 256K x 18 | Volatile | 3.135V~3.465V | 200MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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7005L35J8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 68-LCC (J-Lead) | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7005 | 64Kb 8K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 35ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
SST39SF040-45-4I-WHE | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tray | 2010 | SST39 MPF™ | Obsolete | 2 (1 Year) | 32 | 3A991.B.1.A | 5V | 12.4mm | ROHS3 Compliant | No | 32 | 32-TFSOP (0.488, 12.40mm Width) | 4 Mb | Surface Mount | -40°C~85°C TA | CMOS | 1.2mm | 1 | 25mA | e3 | MATTE TIN | DUAL | 260 | 5V | 40 | SST39SF040 | 32 | 0.5mm | 5V | 45ns | 4Mb 512K x 8 | Non-Volatile | 19b | 4.5V~5.5V | 512KX8 | 8 | Asynchronous | 8b | 0.0001A | 8b | 5V | YES | YES | YES | 128 | FLASH | Parallel | 20μs | 4K | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS61NVF102418-6.5B3I-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 165 | 165-TBGA | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 6.5ns | 18Mb 1M x 18 | Volatile | 2.375V~2.625V | 133MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SST26VF016BAT-104I/SM | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | SST26 SQI® | Obsolete | 1 (Unlimited) | 8 | 3A991.B.1.A | 5.26mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.209, 5.30mm Width) | SPI, Serial | 16 Mb | 5.25mm | Surface Mount | -40°C~85°C TA | CMOS | 2.03mm | 1 | DUAL | 3V | SST26VF016B | YES | 1.27mm | 2.7V | 3.6V | TS 16949 | 16Mb 2M x 8 | Non-Volatile | 2.7V~3.6V | 16MX1 | 1 | 104MHz | 2.7V | 256B | FLASH | SPI - Quad I/O | 1.5ms | BOTTOM/TOP | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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70V35S20PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | no | Active | 3 (168 Hours) | 100 | EAR99 | 70°C | 0°C | 3.3V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | TQFP | Parallel | 3.6V | 3V | 144 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 200mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | 0.5mm | SRAMs | 3-STATE | 20 ns | 18kB | RAM, SDR, SRAM | 26b | 8KX18 | Asynchronous | 0.005A | 18b | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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25AA640A-E/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tube | 2012 | Active | 1 (Unlimited) | ROHS3 Compliant | No | 8 | 8-DIP (0.300, 7.62mm) | SPI, Serial | 64 kb | Through Hole | -40°C~125°C TA | e3 | Matte Tin (Sn) - annealed | 25AA640A | 100 ns | 64Kb 8K x 8 | Non-Volatile | 1.8V~5.5V | 10MHz | SPI | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT27BV256-12RC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1998 | Obsolete | 2 (1 Year) | Non-RoHS Compliant | 28-SOIC (0.342, 8.69mm Width) | Surface Mount | 0°C~70°C TC | EPROM - OTP | AT27BV256 | 28-SOIC | 120ns | 256Kb 32K x 8 | Non-Volatile | 2.7V~3.6V 4.5V~5.5V | EPROM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1009B-20VC | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | no | Obsolete | 1 (Unlimited) | 32 | 20.828mm | Non-RoHS Compliant | 32-BSOJ (0.300, 7.62mm Width) | unknown | 7.5819mm | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | 3.556mm | 1 | e0 | TIN LEAD | DUAL | 220 | 5V | NOT SPECIFIED | 32 | YES | 1.27mm | R-PDSO-J32 | 4.5V | COMMERCIAL | 5.5V | 1Mb 128K x 8 | Volatile | 4.5V~5.5V | 128KX8 | 8 | 1048576 bit | 20 ns | SRAM | Parallel | 20ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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S29GL128S10DHB023 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 16 Weeks | Tape & Reel (TR) | GL-S | Active | 3 (168 Hours) | 64 | 9mm | ROHS3 Compliant | 64 | 64-LBGA | 9mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | ASYNCHRONOUS | 1.4mm | 8542.32.00.51 | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3V | NOT SPECIFIED | YES | 1mm | 2.7V | 3.6V | 100ns | AEC-Q100 | 128Mb 8M x 16 | Non-Volatile | 2.7V~3.6V | 16MX8 | 8 | 134217728 bit | 3V | FLASH | Parallel | 60ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY14E064L-SZ45XC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2005 | Obsolete | 1 (Unlimited) | 28 | EAR99 | 18.085mm | ROHS3 Compliant | Lead Free | 28 | 28-SOIC (0.345, 8.77mm Width) | unknown | Surface Mount | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 2.29mm | 8542.32.00.41 | 1 | DUAL | 260 | 5V | NOT SPECIFIED | CY14*064 | 28 | YES | 1.27mm | 4.5V | Not Qualified | 5.5V | 64Kb 8K x 8 | Non-Volatile | 4.5V~5.5V | 8KX8 | 8 | 65536 bit | 8b | 45 ns | NVSRAM | Parallel | 45ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS49NLC18160-33BI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | 144 | EAR99 | 1 | 18.5mm | Non-RoHS Compliant | 144 | AUTO REFRESH | 144-TFBGA | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.2mm | 8542.32.00.28 | 1 | 300MHz | BOTTOM | 1.8V | 144 | YES | 1mm | 1.7V | Not Qualified | 1.5/1.81.82.5V | 1.9V | 3-STATE | 20ns | 288Mb 16M x 18 | Volatile | 0.819mA | 1.7V~1.9V | 16MX18 | 18 | 301989888 bit | 18b | COMMON | DRAM | Parallel | 248 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS62WV51216EFBLL-45TLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tube | Active | 3 (168 Hours) | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | NOT SPECIFIED | NOT SPECIFIED | 45ns | 8Mb 512K x 16 | Volatile | 2.2V~3.6V | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7130LA20JG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2013 | yes | Active | 3 (168 Hours) | 52 | EAR99 | 70°C | 0°C | 5V | 2 | 19mm | RoHS Compliant | Lead Free | No | 52 | PLCC | Parallel | 5.5V | 4.5V | 8 kb | 19mm | 3.63mm | CMOS | 4.57mm | 1 | 200mA | e3 | Matte Tin (Sn) - annealed | QUAD | J BEND | 260 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 3-STATE | 20 ns | 1kB | RAM, SDR, SRAM | 20b | 1KX8 | Asynchronous | 0.0015A | 8b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT71V65602S133BQ8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2007 | 70°C | 0°C | Non-RoHS Compliant | BGA | Parallel | 133MHz | RAM, SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70T633S10BFI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tray | Active | 4 (72 Hours) | Non-RoHS Compliant | 208-LFBGA | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | IDT70T633 | 208-CABGA (15x15) | 10ns | 9Mb 512K x 18 | Volatile | 2.4V~2.6V | SRAM | Parallel | 10ns |
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SST39VF1601C-70-4C-EKE Microchip Technology
SST39 MPF™ 48 Pin Memory IC SST39 MPF™ Series SST39VF1601C 16 Mb kb 12.2mm mm 18mA mA 16b b
Price: 2.4065
RFQ -
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25LC640-E/P Microchip Technology
5V V 8 Pin Memory IC 25LC640 64 kb kb 9.46mm mm 5mA mA
Price: 0.0000
RFQ -
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MT46V32M8FG-6 L:G Micron Technology Inc.
2.5V V 60 Pin Memory IC MT46V32M8 14mm mm
Price: 0.0000
RFQ -
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IDT7164L25YI8 Integrated Device Technology (IDT)
5V V 28 Pin Memory IC 17.9324mm mm
Price: 0.0000
RFQ -
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SST39SF040-45-4I-WHE Microchip Technology
5V V Surface Mount SST39 MPF™ 32 Pin Memory IC SST39 MPF™ Series SST39SF040 4 Mb kb 12.4mm mm 25mA mA 8b b
Price: 0.0000
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SST26VF016BAT-104I/SM Microchip Technology
SST26 SQI® Memory IC SST26 SQI® Series SST26VF016B 16 Mb kb 5.26mm mm
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Surface Mount 100 Pin Memory IC 144 kb kb 14mm mm 200mA mA 18b b
Price: 0.0000
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IS49NLC18160-33BI ISSI, Integrated Silicon Solution Inc
1.5/1.81.82.5V V 144 Pin Memory IC 18.5mm mm
Price: 0.0000
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7130LA20JG8 Integrated Device Technology (IDT)
5V V Surface Mount 52 Pin Memory IC 8 kb kb 19mm mm 200mA mA 8b b
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