Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Operating Temperature (Max) | Operating Temperature (Min) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Memory IC Type | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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71V3556SA100BGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2015 | no | Active | 3 (168 Hours) | 119 | 85°C | -40°C | 3.3V | 1 | 14mm | RoHS Compliant | Contains Lead | No | 119 | BGA | Parallel | 3.465V | 3.135V | 4.5 Mb | 100MHz | 2.15mm | 22mm | 2.15mm | CMOS | 255mA | 1 | 255mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 119 | INDUSTRIAL | SRAMs | 3-STATE | 5 ns | 100MHz | 512kB | RAM, SDR, SRAM | 17b | Synchronous | 0.045A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT49BV002NT-12VC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 1997 | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 32-TFSOP (0.488, 12.40mm Width) | Surface Mount | 0°C~70°C TC | AT49BV002 | 120ns | 2Mb 256K x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 50μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT47H32M16HR-25E AAT:G | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2010 | Obsolete | 3 (168 Hours) | 84 | EAR99 | 1 | 12.5mm | ROHS3 Compliant | AUTO/SELF REFRESH | 84-TFBGA | 8mm | Surface Mount | -40°C~105°C TC | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | 8542.32.00.28 | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | MT47H32M16 | 84 | YES | 0.8mm | R-PBGA-B84 | 1.7V | Not Qualified | 1.8V | 1.9V | 3-STATE | 400ps | AEC-Q100 | 512Mb 32M x 16 | Volatile | 0.215mA | 1.7V~1.9V | 32MX16 | 16 | 536870912 bit | 400MHz | 0.007A | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
6116LA25SOG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2013 | yes | Active | 1 (Unlimited) | 24 | EAR99 | 70°C | 0°C | 5V | 1 | 15.4mm | RoHS Compliant | Lead Free | No | 24 | SOIC | Parallel | 5.5V | 4.5V | 16 kb | 7.6mm | 2.34mm | CMOS | 1 | 95mA | e3 | Matte Tin (Sn) - annealed | DUAL | GULL WING | 260 | 5V | 30 | 24 | COMMERCIAL | SRAMs | 5V | 3-STATE | 25 ns | 2kB | RAM, SDR, SRAM - Asynchronous | 11b | 2KX8 | Asynchronous | 0.00002A | 8b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V424L10YG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | 2009 | yes | Active | 3 (168 Hours) | 36 | 70°C | 0°C | 3.3V | 1 | 23.4mm | RoHS Compliant | Lead Free | No | 36 | Parallel | 3.6V | 3V | 4 Mb | 10.2mm | 2.2mm | CMOS | 3.683mm | 1 | e3 | Matte Tin (Sn) - annealed | DUAL | J BEND | 260 | 3.3V | 36 | COMMERCIAL | YES | SRAMs | 3-STATE | 10 ns | 512kB | RAM, SDR, SRAM - Asynchronous | 19b | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29GL256S11FHIV23 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | 2017 | GL-S | Active | 3 (168 Hours) | 64 | 3A991.B.1.A | 13mm | ROHS3 Compliant | 64 | 64-LBGA | 11mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | ASYNCHRONOUS | 1.4mm | 8542.32.00.51 | 1 | e1 | TIN SILVER COPPER | BOTTOM | 260 | 3V | 40 | YES | 1mm | 2.7V | Not Qualified | 3/3.3V | 3.6V | 110ns | 256Mb 16M x 16 | Non-Volatile | 0.08mA | 1.65V~3.6V | 16MX16 | 16 | 268435456 bit | 0.0001A | 2.7V | YES | YES | YES | 256 | 16words | YES | YES | FLASH | Parallel | 60ns | 64K | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "MT53D8DANZ-DC TR") |
MT53D8DANZ-DC TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Discontinued | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
PN28F128M29EWHA | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | 2015 | Obsolete | 3 (168 Hours) | 85°C | -40°C | ROHS3 Compliant | Parallel | -40°C~85°C TA | FLASH - NOR | PN28F128M29 | 60ns | 128Mb 16M x 8 8M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 60ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY14ME064J1A-SXI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2008 | Obsolete | 3 (168 Hours) | 8 | 3A991.B.2.A | 4.889mm | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 2-Wire, I2C, Serial | unknown | 3.8985mm | Surface Mount | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | SYNCHRONOUS | 1.727mm | 8542.32.00.41 | 1 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 5V | 20 | CY14ME064 | YES | 1.27mm | R-PDSO-G8 | 4.5V | SRAMs | Not Qualified | 5V | 5.5V | 64Kb 8K x 8 | Non-Volatile | 0.003mA | 4.5V~5.5V | 8KX8 | 8 | 65536 bit | 3.4MHz | 0.00015A | NVSRAM | I2C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SST26VF016BAT-104I/UB | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | SST26 SQI® | Obsolete | 1 (Unlimited) | 85°C | -40°C | ROHS3 Compliant | SPI | 104MHz | Surface Mount | -40°C~85°C TA | FLASH | SST26VF016B | 8-USON (4x3) | 16Mb 2M x 8 | Non-Volatile | 2.7V~3.6V | 104MHz | FLASH | SPI - Quad I/O | 1.5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MTFC64GAPALNA-AIT | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 11 Weeks | Box | Active | 100 | 18mm | RoHS Compliant | compliant | 14mm | CMOS | SYNCHRONOUS | 1.2mm | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 30 | INDUSTRIAL | YES | 1mm | R-PBGA-B100 | 2.7V | 85°C | -40°C | 3.6V | 64GX8 | 8 | 549755813888 bit | FLASH CARD | PARALLEL | 2.7V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT49BV322A-70CI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 1997 | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 48-TFBGA, CSPBGA | Surface Mount | -40°C~85°C TC | AT49BV322 | 70ns | 32Mb 4M x 8 2M x 16 | Non-Volatile | 2.65V~3.6V | FLASH | Parallel | 200μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1041GN30-10ZSXIT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | 2012 | yes | Active | 3 (168 Hours) | 44 | 3A991.B.2.A | 18.415mm | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | 10.16mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1.194mm | 8542.32.00.41 | 1 | DUAL | 260 | 3V | NOT SPECIFIED | CY7C1041 | YES | 0.8mm | R-PDSO-G44 | 2.2V | 3.6V | 4Mb 256K x 16 | Volatile | 2.2V~3.6V | 256KX16 | 16 | 4194304 bit | 10 ns | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V25761YSA200BGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2009 | 85°C | -40°C | Non-RoHS Compliant | BGA | Parallel | 200MHz | RAM, SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
71256S55DB | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Bulk | 2011 | Active | 125°C | -55°C | 5V | 1 | 37.2mm | RoHS Compliant | Contains Lead | No | 28 | CDIP | Parallel | 256 kb | 15.24mm | 1.65mm | RAM, SRAM - Asynchronous | 15b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT29E2T08CTCCBJ7-6:C | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Surface Mount | Tray | Obsolete | 1 (Unlimited) | 3.3V | RoHS Compliant | Copper, Silver, Tin | 152 | 152-LBGA | 2 Tb | Surface Mount | 0°C~70°C TA | FLASH - NAND | 2Tb 256G x 8 | Non-Volatile | 2.7V~3.6V | 167MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7164L35DB | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Bulk | 2011 | no | Active | 1 (Unlimited) | 28 | 125°C | -55°C | 5V | 1 | 37.2mm | RoHS Compliant | Contains Lead | No | 28 | CDIP | Parallel | 64 kb | 15.24mm | 1.65mm | CMOS | 1 | e0 | Tin/Lead (Sn63Pb37) | DUAL | THROUGH-HOLE | 240 | 5V | 28 | MILITARY | NO | 2.54mm | SRAMs | 5V | 3-STATE | MIL-STD-883 Class B | RAM, SRAM - Asynchronous | 13b | 8KX8 | 0.0002A | 35 ns | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RC28F128P30TF65A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2009 | StrataFlash™ | no | Obsolete | 3 (168 Hours) | 64 | 3A991.B.1.A | 1.8V | 13mm | Non-RoHS Compliant | No | 64 | 64-TBGA | Parallel, Serial | 128 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.2mm | 8542.32.00.51 | 1 | 28mA | e0 | BOTTOM | 1.8V | 28F128P30 | 64 | YES | 1mm | 1.81.8/3.3V | 1.7V | 128Mb 8M x 16 | Non-Volatile | 23b | 1.7V~2V | 8MX16 | 16 | Asynchronous | 52MHz | 0.000055A | 65 ns | 16b | NO | NO | 4127 | 8words | FLASH | Parallel | 65ns | TOP | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS63WV1288DBLL-10HLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 32 | ROHS3 Compliant | 32 | 32-LFSOP (0.465, 11.80mm Width) | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | DUAL | YES | 0.5mm | Not Qualified | 2.5/3.3V | 3-STATE | 1Mb 128K x 8 | Volatile | 0.055mA | 2.4V~3.6V | 128KX8 | 8 | 1048576 bit | 0.000055A | 10 ns | COMMON | 2V | SRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F8G01ADAFD12-AAT:F TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | Automotive, AEC-Q100 | Active | 3 (168 Hours) | ROHS3 Compliant | 24-TBGA | Surface Mount | -40°C~105°C TA | FLASH - NAND (SLC) | 8Gb 8G x 1 | Non-Volatile | 2.7V~3.6V | 83MHz | FLASH | SPI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
N25Q128A13B1240E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tray | 2011 | yes | Active | 3 (168 Hours) | 24 | 3A991.B.1.A | 8mm | ROHS3 Compliant | No | 24 | 24-TBGA | SPI, Serial | 128 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.2mm | 8542.32.00.51 | 1 | 20mA | e1 | TIN SILVER COPPER | BOTTOM | 260 | 3V | 30 | N25Q128A13 | 24 | YES | 1mm | 3/3.3V | 2.7V | 7 ns | 128Mb 16M x 8 | Non-Volatile | 24b | 2.7V~3.6V | 16MX8 | 8 | Synchronous | 108MHz | 0.0001A | 8b | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 256B | SPI | FLASH | SPI | 8ms, 5ms | BOTTOM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT46V32M16T67A3WC1 | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 16 Weeks | Bulk | Active | RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT45W4MW16BBB-706 WT TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2005 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 54-VFBGA | Surface Mount | -30°C~85°C TC | PSRAM (Pseudo SRAM) | MT45W4MW16 | 54-VFBGA (6x9) | 70ns | 64Mb 4M x 16 | Volatile | 1.7V~1.95V | PSRAM | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT53B1DATG-DC | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Box | Obsolete | 1 (Unlimited) | SDRAM - Mobile LPDDR4 | Volatile | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT29F32G08CBADBWP-12IT:D | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tray | Active | 3 (168 Hours) | 85°C | -40°C | 3.3V | ROHS3 Compliant | No | 48-TFSOP (0.724, 18.40mm Width) | Parallel, Serial | 32 Gb | Surface Mount | -40°C~85°C TA | FLASH - NAND | 48-TSOP I | 32Gb 4G x 8 | Non-Volatile | 2.7V~3.6V | 83MHz | 8kB | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
SST25VF016B-50-4I-QAF | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tube | 2005 | SST25 | yes | Active | 3 (168 Hours) | 8 | 3A991.B.1.A | 3.3V | 6mm | ROHS3 Compliant | Lead Free | Gold | No | 8 | 8-WDFN Exposed Pad | SPI, Serial | 16 Mb | 750μm | 5mm | Surface Mount | -40°C~85°C TA | CMOS | 1 | 15mA | e4 | DUAL | 3V | SST25VF016B | 8 | 1.27mm | 2.7V | 3.6V | 8 ns | 16Mb 2M x 8 | Non-Volatile | 1b | 2.7V~3.6V | 16MX1 | Synchronous | 8b | 50MHz | 0.00002A | 8b | 100 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 2.7V | SPI | FLASH | SPI | 10μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
93LC86CT-I/MNY | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tape & Reel (TR) | 2012 | Active | 1 (Unlimited) | 8 | ROHS3 Compliant | Gold | 8 | 8-WFDFN Exposed Pad | Serial | 16 kb | Surface Mount | -40°C~85°C TA | CMOS | 3mA | e4 | DUAL | 93LC86C | YES | 0.5mm | Not Qualified | 3/5V | 100 ns | 16Kb 2K x 8 1K x 16 | Non-Volatile | 2.5V~5.5V | 1KX16 | 16 | 3MHz | 0.000001A | 8 | 200 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | MICROWIRE | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
CY7C1020BN-12ZXCT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2006 | Obsolete | 3 (168 Hours) | 44 | 3A991.B.2.B | 18.415mm | ROHS3 Compliant | Lead Free | 44-TSOP (0.400, 10.16mm Width) | unknown | 10.16mm | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | 1.194mm | 8542.32.00.41 | 1 | e3 | TIN | DUAL | 5V | CY7C1020 | 44 | YES | 0.8mm | R-PDSO-G44 | 4.5V | Not Qualified | 5.5V | 512Kb 32K x 16 | Volatile | 4.5V~5.5V | 32KX16 | 16 | 524288 bit | 12 ns | SRAM | Parallel | 12ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24FC512-I/SM | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tube | 2005 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 2.5V | 5.21mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.209, 5.30mm Width) | 2-Wire, I2C, Serial | No SVHC | 512 kb | 1.88mm | 5.28mm | Surface Mount | -40°C~85°C TA | CMOS | 1 | 5mA | e3 | Matte Tin (Sn) | DUAL | 2.5V | 24FC512 | 8 | 1.27mm | 1.7V | 2/5V | 5.5V | 400ns | 512Kb 64K x 8 | Non-Volatile | 1.7V~5.5V | 1MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V9369L9PFG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2009 | yes | Active | 3 (168 Hours) | 100 | 70°C | 0°C | 3.3V | 2 | 14mm | RoHS Compliant | Lead Free | No | 100 | TQFP | Parallel | 3.6V | 3V | 288 kb | 40MHz | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 225mA | e3 | Matte Tin (Sn) - annealed | QUAD | FLAT | 260 | 3.3V | 100 | COMMERCIAL | 0.5mm | 20 ns | RAM, SRAM | 14b | 16KX18 | Synchronous | 18b |
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71V3556SA100BGI8 Integrated Device Technology (IDT)
Surface Mount 119 Pin Memory IC 4.5 Mb kb 14mm mm 255mA mA 36b b
Price: 0.0000
RFQ -
-
MT47H32M16HR-25E AAT:G Micron Technology Inc.
1.8V V 84 Pin Memory IC MT47H32M16 12.5mm mm
Price: 0.0000
RFQ -
6116LA25SOG8 Integrated Device Technology (IDT)
5V V Surface Mount 24 Pin Memory IC 16 kb kb 15.4mm mm 95mA mA 8b b
Price: 0.0000
RFQ -
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