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2SD2707T2LV
2SD2707T2LV
687-2SD2707T2LV
SOT-723
2SD2707T2LV datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at HK JDW
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2SD2707T2LV Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 820 @ 1mA 5V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 5mA, 50mA.For high efficiency, the continuous collector voltage must be kept at 150mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 12V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 150mA.In the part, the transition frequency is 250MHz.As a result, it can handle voltages as low as 50V volts.A maximum collector current of 150mA volts is possible.
2SD2707T2LV Features
the DC current gain for this device is 820 @ 1mA 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 12V
the current rating of this device is 150mA
a transition frequency of 250MHz
2SD2707T2LV Applications
There are a lot of ROHM Semiconductor 2SD2707T2LV applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
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2SD2707T2LV
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