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APT13005T-G1
APT13005T-G1
233-APT13005T-G1
TO-220-3
APT13005T-G1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW
In Stock : 999
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APT13005T-G1 Overview
DC current gain in this device equals 8 @ 2A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 900mV, giving you a wide variety of design options.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 900mV @ 1A, 4A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.Single BJT transistor comes in a supplier device package of TO-220AB.The device has a 450V maximal voltage - Collector Emitter Breakdown.In extreme cases, the collector current can be as low as 4A volts.
APT13005T-G1 Features
the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 900mV
the vce saturation(Max) is 900mV @ 1A, 4A
the emitter base voltage is kept at 9V
the supplier device package of TO-220AB
APT13005T-G1 Applications
There are a lot of Diodes Incorporated APT13005T-G1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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APT13005T-G1
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