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BC858BT116
BC858BT116
687-BC858BT116
TO-236-3, SC-59, SOT-23-3
BC858BT116 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at HK JDW
In Stock : 999
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BC858BT116 Overview
This device has a DC current gain of 210 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -650mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A constant collector voltage of -100mA is necessary for high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -100mA.The part has a transition frequency of 250MHz.Single BJT transistor can be broken down at a voltage of 30V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC858BT116 Features
the DC current gain for this device is 210 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 250MHz
BC858BT116 Applications
There are a lot of ROHM Semiconductor BC858BT116 applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
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BC858BT116
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