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  • BD135

BD135

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Manufacturer No:

BD135

Manufacturer:

STMicroelectronics

HK JDW NO:

761-BD135

Package:

TO-225AA, TO-126-3

Datasheet:

BD135

Description:

BD135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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BD135 Description

 

BD135 transistor is an NPN transistor that operates by the current. Comparatively with Field-effect transistors with BD135 NPN transistor have a slower switching speed, while the input impedance is lower and they consume a lot of power. STMicroelectronics BD135 is widely used in television, broadcasting communications radar, computers electronic devices that control automatic devices as well as household appliances and other fields.

 

BD135 Features

 

Low rDS(on) Provides Higher Efficiency and Extends Battery Life

Miniature Surface Mount Package Saves Board Space

Pb-Free Package is Available

Automotive and Other Applications

 

 

BD135 Applications

 

Television

Broadcasting communications

Radar

Computers

Household appliances

 


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From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

BD135

technical specifications, attributes, parameters and parts with similar specifications to BD135.

  • Type
    Parameter
    Select All
  • JESD-609 Code

    e3

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Subcategory

    Other Transistors

  • Max Power Dissipation

    1.25W

  • Base Part Number

    BD135

  • Pin Count

    3

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    1.25W

  • Case Connection

    ISOLATED

  • Transistor Application

    AMPLIFIER

  • Polarity/Channel Type

    NPN

  • Transistor Type

    NPN

  • Collector Emitter Voltage (VCEO)

    45V

  • Max Collector Current

    1.5A

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    40 @ 150mA 2V

  • Current - Collector Cutoff (Max)

    100nA ICBO

  • Vce Saturation (Max) @ Ib, Ic

    500mV @ 50mA, 500mA

  • Collector Emitter Breakdown Voltage

    45V

  • Transition Frequency

    250MHz

  • Collector Emitter Saturation Voltage

    500mV

  • Max Breakdown Voltage

    45V

  • Collector Base Voltage (VCBO)

    45V

  • Emitter Base Voltage (VEBO)

    5V

  • hFE Min

    25

  • Height

    10.8mm

  • Length

    7.8mm

  • Width

    2.7mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Factory Lead Time

    8 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 8 months ago)

  • Contact Plating

    Tin

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-225AA, TO-126-3

  • Number of Pins

    3

  • Weight

    4.535924g

  • Transistor Element Material

    SILICON

  • Operating Temperature

    150°C TJ

  • Packaging

    Tube

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