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BD236STU
BD236STU
598-BD236STU
TO-225AA, TO-126-3
BD236STU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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BD236STU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 1A 2V.A collector emitter saturation voltage of -600mV allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 100mA, 1A.Keeping the emitter base voltage at -5V can result in a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.There is a transition frequency of 3MHz in the part.In extreme cases, the collector current can be as low as 2A volts.
BD236STU Features
the DC current gain for this device is 25 @ 1A 2V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 3MHz
BD236STU Applications
There are a lot of ON Semiconductor BD236STU applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
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BD236STU
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